一种低噪声电荷灵敏前置放大器的研制

介绍了一款新型低噪声电荷灵敏前置放大器的研制。该电荷灵敏前置放大器采用新的自主设计方案,可利用计算机的USB接口直接供电,其电子学等效输入噪声约为0.08 f C,积分非线性为1.8%。该电荷灵敏前置放大器可用于小型半导体核探测谱仪的信号读出放大。集探测器偏置高压、低压电源、电荷灵敏前放、成形电路于一体,体积小、使用方便、噪声低。     

一种低噪声快电荷灵敏前置放大器的研制

简要介绍了新型低噪声快电荷灵敏前置放大器。这种电荷灵敏前置放大器采用新的设计方法案，该前放主要采用低噪声场效应晶体管和集成运算放大器构成，其等效输入噪声≤2．2keV。该前放具有电路结构简单、体积小、输出信号上升时间快、噪声低、稳定性好等特点。     

基于CdZnTe探测器的低噪声小尺寸电荷灵敏前置放大器的设计

通过分析CdZnTe半导体射线探测器的性能,并考虑到电荷灵敏放大器的噪声特性,设计了用于便携式探测器中的低噪声小尺寸电荷灵敏放大器.在常温下,3mm×7mm×3mm的CdZnTe探测器与小尺寸电荷灵敏前置放大器探测系统对于241Am d的59.5keVγ射线的能量分辨率为4.38%.     

空间X射线测量用电荷灵敏前置放大器和主放大器的研制

为配合我室与高能物理研究所合作的星载“多路Si—PIN探测器系统”地面原理样机项目的需要,开发研制空间X射线测量用多路电荷灵敏前置放大器和主放大器。把电荷灵敏前置放大器和主放大器共同安放在1个90mm×60mm的电路板上,有单独的3路输入和输出,相当于常规的3个电荷灵敏前置放大器和主放大器。整个电路采用低功耗的表面贴元器件,具有低噪声、低功耗、电路简单、体积小等特点,并可应用于多路探测器测量系统中。     

低噪声电荷灵敏前置放大器的噪声分析

本文从基本的噪声模型出发,对自制前置放大器进行定量的噪声分析,并与Pspice仿真和实际测量的结果进行比较.给出等效输出噪声谱、等效噪声电荷、噪声斜率计算的实用公式,供电荷灵敏前置放大器的设计和改进使用.     

一种新型的8路电荷灵敏前置放大器

本文介绍了一种新型专用的多路电荷灵敏前置放大器,其路数最多为八路,这种电荷灵敏置放大器采用新的设计方案,该前放主要采用低噪声场效应晶体管和集成运算放大器构成,其等效输入噪声小于等于2．2 keV。该前放具有电路结构简单、体积小、输出信号上升时间快、噪声低、稳定性好等特点。并对它的设计以及特点作了较详细的阐述。     

基于阻容低通反馈的电荷灵敏前置放大器的设计

传统电荷灵敏前置放大器以高阻值电阻作为低频反馈端,高阻值电阻所引入的热噪声为前置放大器噪声的主要来源。本文以N沟道结型场效应晶体管和阻容(Resistor-Capacitance,RC)电路构成低通网络代替传统高阻值反馈电阻完成了新型电荷灵敏前置放大器的研制。该电路以结型场效应晶体管和集成运算放大器构成放大电路,具有高输入阻抗及大开环增益的优点;以小容值电容构成高通回路,为电路提供高频反馈回路,同时实现核脉冲电流的积分;以RC低通网络构成直流反馈回路,为电路提供一个稳定的直流工作点,同时构成电压分压器使N沟道结型场效应管工作在正向偏置状态,实现对反馈电容中的电荷进行连续放电。相比于传统阻容反馈式电荷灵敏放大器,该电路能够有效克服大阻值反馈电阻引入的噪声,尤其适用于Si-PIN等半导体探测器。将该电荷灵敏前置放大器与BPX66型Si-PIN探测器连接,在室温下对241Am源进行测量,其能量分辨率可达到3.03%@59.5 keV。     

基于ORCAD/PSPICE的电荷灵敏前置放大器仿真分析

使用电路仿真软件ORCAD/PSPICE,对电荷灵敏前置放大器的灵敏度、频率响应、噪声和温度效应等主要特性进行了仿真分析,仿真结果与理论结果相符合.这为分析、优化前置放大器的性能提供了一种便捷可靠的方法.     

高分辨谱仪放大器的测量方法

本文对高分辨谱仪中的电荷灵敏前置放大器和低噪声放大器的噪声、积分非线性、幅度过载及计数率效应等性能的测量方法进行了介绍。     

小尺寸电荷灵敏前置放大器

介绍了一种应用于半导体探测器的小尺寸电荷灵敏前置放大器的实例，并分析了测量其噪声的方法，给出了降低前放噪声的几种手段。     

Ultra-Low Noise Charge Sensitive Preamplifier for Scintillation Detection with Avalanche Photodiodes in PET Applications

The need for compact, fast, low-noise front-end electronics in high resolution positron emission tomography (PET) has prompted this effort to design a preamplifier suitable for avalanche photodiode-based scintillation detectors. Due to the small signals from the detectors (< .03 pC/MeV), a preamplifier with ultra-low noise performance in the 5 to 20 MHz range is essential to achieve the timing resolution required by the PET application. Out of many available technologies, a new third generation MOSFET wqas selected and implemented as input transistor in an original charge sensitive (CSP) design. Performance among the best reported to date are obtained. The new design was implemented as a dual-channel preamplifier in high density hybrid (thick film) technology.     

便携式X荧光分析仪前置放大器的设计

介绍了一种新型高速低噪声器的电荷灵敏前置放大器,该放大器已应用于便携式X射线荧光分析仪中,它具有电路结构简单、性能可靠、线性度较好、输出信号上升时间快、噪声低等特点,有较好的性能价格比。     

A low noise charge sensitive preamplifier with switch control feedback resistance

In this paper, the design and analysis of a new low noise charge sensitive preamplifier for silicon strip, Si（Li）, CdZnTe and CsI detectors etc. with switch control feedback resistance were described, the entire system to be built using the CMOS transistors. The circuit configuration of the CSP proposed in this paper can be adopted to develop CMOS-based Application Specific Integrated Circuit further for Front End Electronics of read-out system of nuclear physics, particle physics and astrophysics research, etc. This work is an implemented design that we succeed after a simulation to obtain a rise time less than 3ns, the output resistance less than 94Ω and the linearity almost good.     

硅光电二极管与电荷灵敏前置放大器在中微子实验中的设计应用研究

在台湾中微子实验项目先期研究中，用硅光电二极管测读中微子作用于CsI(Tl)晶体的光谱信号，介绍了结合硅光电二极管设计制作低噪声高分辨率电荷灵敏前置放大器的实验研究及其结果的能谱响应特性。     

Monolithic junction field-effect transistor charge preamplifier forcalorimetry at high luminosity hadron colliders

The outstanding noise and radiation hardness characteristics of epitaxial-channel junction field-effect transistors (JFET) suggest that a monolithic preamplifier based on them may be able to meet the strict specifications for calorimetry at high luminosity colliders. Results obtained so far with a buried layer planar technology, among them an entire monolithic charge-sensitive preamplifier, are described. Tests have demonstrated that the noise behavior of the preamplifier is close to that which would be expected if the total noise referred at the preamplifier input were the thermal noise in the input JFET device; that is, the monolithic circuit approaches the noise performances of a hybrid preamplifier using discrete JFETs     

CMOS low-noise switched charge sensitive preamplifier for CdTe andCdZnTe X-ray detectors

CdTe and CdZnTe X-ray detector arrays for imaging and spectroscopy provide low capacitance current sources with low leakage currents. The optimal shaping time for low-noise operation is relatively high in CMOS analog channels that provide the readout for these detectors. The shaper is centered at lower frequencies, and thus the 1/f noise from the electronics is the main noise source that limits the resolution of the channel. The optimal dimensions of the input stage MOSFET are determined by this noise. In this paper a design criterion for the optimization of the resolution and the power consumption in a 1/f noise dominated readout is introduced. A readout based on CMOS switched charge sensitive preamplifier without feedback resistor has been designed and fabricated in the CMOS 2-μ low-noise analog process provided by MOSIS. This design provides high sensitivity and the possibility to integrate a large number of channels with low power consumption. Measurements of the performance of a first prototype chip are presented     

Characteristics of 16-Channel ASIC Preamplifier Board for Microstrip Gas Chamber and Animal PET

A 16-channel ASIC preamplifier board has been designed for microstrip gas chamber (MSGC) and animal position emission tomography (PET) detectors. The highly integrated ASIC chips can be used for individual readouts from a large number of channels to improve the spatial resolution and counting rate. The preamplifier board was tested to have a low optimum equivalent noise charge (ENC) of ~ 1400 e^? FWHM at a shaping time of 0.1 μs. The output voltage to input charge gain is 0.96 V/pC, and the nonlinearity is ~ 2:0% over a range of ?500 fC to 1000 fC in input charge. The rise time (10%–90%) with no input capacitor is about 54 ns. The power consumption of this preamplifier board is ~ 100 mW. The preamplifier board has been used to read out a 3 × 3 cm MSGC plate and an optimum FWHM energy resolution of 19.1% (5.9 keV peak of Fe-55) was obtained.     

一种基于电流反馈芯片的电荷灵敏快前放设计

介绍了一种基于电流反馈运算放大器(CFOA)的快电荷灵敏放大电路。通过一个小电阻的引入避免了CFOA电路直接电容反馈所引起的电路不稳定问题,通过反馈电阻和反馈电容的适当取值降低了噪声。经过测试,其带宽可达200MHz,时间分辨率可达125ps。该前放具有高带宽、高性噪比、高时间分辨率等特点,已成功应用于兰州重离子加速器单粒子效应地面模拟实验TR5终端。     

ICON, a current mode preamplifier in CMOS technology for use withhigh rate particle detectors

The ICON current mode preamplifier intended for use in experiments at high-rate hadron colliders is described. The transient response and noise performance are analyzed. One chip has been made using an ICON circuit with resistive feedback to produce a preamplifier with a peaking time of below 10 ns. This fast preamplifier has a gain of 870 mV/pC and a power dissipation of around 1 mW. Another chip was made using the ICON circuit as the front-end to a dual-port analog memory. The noise measured is between 2400 e^- and 3000 e^-. An important characteristic of ICON is that it can tolerate a detector leakage current of 10 μA at the DC-coupled input. Therefore, it is very suitable for silicon detector systems under severe radiation conditions     

改进的CMOS电荷灵敏前放噪声优化设计方法

CMOS专用集成电荷灵敏前放的噪声性能对于辐射探测非常关键.提出了一种改进的CMOS电荷灵敏前放低噪声设计方法,通过实例计算得到的噪声结果比现有方法都有不同程度的提高.