W波段带状注速调管电子光学及注波互作用系统的研究

通过冷流模型理论对均匀场聚焦带状电子注的传输进行了研究,结果表明,通过增强聚焦磁场并提高电子注填充高度因子,可以有效降低Diocotron不稳定性并实现长距离的稳定传输.结合理论研究,对均匀场聚焦带状注电子光学系统进行了三维仿真设计与优化,利用自主开发的二维非线性注波互作用程序SBK2D,对W波段带状注速调管进行了初步分析,结果为输出峰值功率69 kW、效率24%、增益37dB、3dB带宽100 MHz.研制出的具有高机械对准精度的带状注速调管电子束管,带状注截面10 mm×0.5 mm,且在电子注电压20～82 kV,电流0.50～4.27A,长度100 mm的漂移通道内电子注传输直流通过率达到98%以上,高于之前在90 mm漂移通道内获得的95%的实验结果.     

带状电子注聚焦系统设计

通过理论分析、数值模拟和实验研究了PCM 结构聚焦椭圆带状电子注的可行性。利用三维PIC 粒子模拟软 件模拟了椭圆带状电子注在PCM 结构行程的周期磁场中的传输过程,结果显示：截面为10x0.4 mm2 的椭圆带状电子 注在12x0.8 mm2 的矩形通道中稳定长距离传输120mm 无截获。对PCM 聚焦结构的磁场进行了测试,测试结果与数 值模拟结果相符。实验并研究了该PCM 聚焦系统约束带状电子注的能力,测试用速调管的设计电压为75kV,在56.8kV 时的直流通过率达到52.1%,并随着工作电压的升高呈上升趋势。     

基于螺线盘与永磁体聚焦径向电子束的研究

本文首先对径向电子束在浸没式聚焦条件下的传输特性进行了理论分析,得到了束流传输过程中轴向扩张幅值 与外加引导磁场强度关系之间的解析表达式,接下来分别阐述了螺线盘和轴向磁化的永磁环在空间中产生磁场的分布规 律,最后设计了一种基于螺线盘和永磁体混合聚焦径向电子束的引导磁场系统,仿真研究了径向电子束在该引导磁场系 统产生的磁场下稳定传输时的束轨迹。     

D波段行波管电子光学系统设计

提出一种用于D波段行波管的电子光学系统设计方案,包括电子枪和永磁聚焦系统,并进行了验证。电子枪采用经典皮尔斯电子枪结构,阴极发射面的外层设置阴极套壳,抑制阴极边缘杂散发射;采用圆柱形控制极替代锥形控制极,同时在聚焦极加负偏压,调节电子注的压缩状态。所设计电子枪工作电压为19 kV,提供电子注电流57 mA,注腰半径为0.068 mm,射程为14.9 mm。为在半径0.15 mm的电子通道中稳定地聚焦和传输电子注,永磁聚焦系统采用周期永磁聚焦系统。峰值磁场为布里渊磁场的2.9倍,增加了电子注刚性。模拟结果显示,传输的电子注最大波动半径小于0.1 mm。按所设计的电子光学系统加工组装了试验流通短管,测试结果显示电子注电流为49.83 mA,收集极电流为49.6 mA,对应电子注流通率达到99.5%,实现了设计目标。     

强流相对论电子束在PPM系统中的传输特性研究

首先对强流相对论电子束在聚焦系统中的传输特性进行了理论分析,给出了束流参数与周期引导磁场峰值大小的关系,然后通过粒子仿真验证了理论分析的正确性,并得到了在一定的电压和通道半径条件下,周期永磁聚焦(PPM)系统能传输的电子束的最大电流。文章为强流相对论电子束周期永磁聚焦系统的设计提供了一定的参考。     

太赫兹FWG-TWT电子光学系统的数值模拟验证

结合实验模型,对0.22 THz折叠波导行波管(FWG-TWT)的电子光学系统进行数值模拟验证。首先对电子枪的工作机制进行细致研究和仿真验证,然后对电子光学系统(包括电子枪和周期永磁聚焦结构两部分)进行一体化建模,结合实际,合理设置仿真模型的工作参数及边界条件等。分析影响电子注流通率的关键因素,调整结构参数和束流参数,提高电子注的直流流通率。     

带状电子注在周期磁场中传输的稳定性

在理论分析的基础上,对带状注在周期磁场中传输的单平面聚焦稳定性进行了数值计算和PIC 程序模拟,验证了带状注在周期磁场中长距离传输的稳定性条件,详细分析了聚焦磁场周期长度对束流稳定性的影响,从而表明Wiggler聚焦磁场适于直流电压较高的束流,小周期长度的聚焦结构要求精确的机械制造。为接近真实的情形,设定漂移管和电子注的横向尺寸有限,而聚焦结构无限宽。本文的理论和仿真研究为设计中采用合适的周期聚焦结构,选用合适的设计参数提供了依据。     

S波段多注速调管电子枪设计

介绍了一种应用于S波段同轴腔高功率多注速调管的电子枪设计方案。该电子枪总电子注数目为40个(内层19个,外层21个),工作电压为60 kV,总电流为300 A(平均分配在40个电子注上),单注导流系数为0.51μP,总导流系数为20.4μP,设计的阴极电流发射密度小于12 A/cm²,电子枪内最大场强为16.6 kV/mm。为使系统小型化,采用周期反转永磁聚焦系统约束电子注,聚焦系统由四组磁钢形成三个磁场均匀区,三个均匀区的磁场逐级增大,最小磁场强度为0.11 T,最大磁场强度为0.12 T。采用三维计算软件对电子注静电轨迹、磁场分布及聚焦轨迹进行了计算和优化,设计的多注电子枪电子注通过率达到了100%。     

浸没流多透镜多注电子光学系统的模拟研究

该文采用先2维后3维的计算方法,对L波段高峰值功率多注速调管电子光学系统进行了模拟设计。采用均匀场浸没流多透镜聚焦系统对电子注进行聚焦,获得了通过率100%,填充因子55%,特性良好的旁轴电子注。模拟计算表明,多透镜系统可有效调整电子注平衡半径,电子枪区均匀场可有效调整电子注波动性及层流性,聚集系统可在阴极磁感应强度为0.001~0.01 T,主磁场为0.06~0.13 T的范围内实现对旁轴电子注的良好聚焦。     

多注速调管电子光学系统的研究

本文比较系统地阐述了在多注速调管电子光学系统中开展的研究工作。给出了周期反转永磁聚焦系统的设计方法和设计考虑,讨论了控制极调制多注电子枪设计中遇到的特殊问题和解决方法,建立了计算电子光学系统的二维磁场和电子轨迹计算软件,并应用这些软件设计和研制了S波段200kW多注宽带速调管的电子光学系统。该管输出功率180kW,带宽7.6％,效率44.4％,增益大于45dB,电子注通过率89％,高频通过率69-83％。设计计算与实验结果有较好的一致性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks