Evaluation of the corrosion performance of Cu–Al intermetallic compounds and the effect of Pd addition

Copper wire has become a mainstream bonding material in fine-pitch applications due to the rising cost of gold wire. In recent years, palladium-coated copper (Pd–Cu) wire is being increasingly used to overcome some constraints posed by pure Cu wire. During wire bonding with aluminum bond pads, different intermetallic compound (IMC) phases that have been identified at the bond interface are typically CuAl₂, CuAl and Cu₉Al₄. However, the corrosion susceptibility of these IMCs has not been investigated. This paper compares the electrical impedance and corrosion performance of the three types of Cu–Al IMCs in an acidic chloride medium by employing electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization. The analysis of the potentiodynamic polarization results was performed using Tafel extrapolation. A comparison was made with pure Cu and Al. The effect of Pd alloy on the IMC corrosion performance has also been studied. Among the three Cu–Al IMCs, Cu₉Al₄ was observed to have the largest corrosion rate followed by CuAl₂ and CuAl. For the metals, Cu was observed to have the lowest corrosion rate and Al is the most easily corroded. The addition of Pd of up to 10 wt.% replacement of the Cu in the alloys slightly improves the corrosion resistance of the metals and IMCs.     

High temperature degradation of palladium coated copper bond wires

High temperature storage lifetime tests of palladium coated copper bond wires (pcc-wires) beyond 1000 h@150 °C lead to an increased number of broken stitches during wire bond pull test. In this article we show that there is an intrinsic degradation of pcc-wires: defects in the Pd layer allow a temperature driven diffusion of Cu to the Pd surface reacting to CuO on the wire surface. Voids in the range of several microns in the Cu wire core weaken the bond wire strength to very low values.The degradation mechanism of pcc-wires is found in both cases, in molded packages and at non-molded wires from the spool. We present results after temperature storage at 150 °C, 175 °C, 200 °C, and 250 °C up to 3000 h.     

Cu–Al intermetallic compound investigation using ex-situ post annealing and in-situ annealing

In Cu wire technology, it is observed that the Cu–Al IMC formation increases from a very thin layer of a few nm to a few μm after subjected to annealing process. The identified IMC phases are mainly CuAl₂, CuAl and Cu₉Al₄, whereas the other three phases which are less reported are Cu₄Al₃, Cu₃Al₂ and Cu₃Al. The reliability risk of Cu–Al IMC is commonly known, with the degradation of voids or crack propagation from ball periphery to internal ball bond direction after long duration of annealing. However, the cause of the degradation is not well established. This paper will focus on the study of the degradation of Cu–Al IMC layers with and without the presence of a mold compound by using ex-situ post annealing and in-situ annealing method on the same assembled sample. The ex-situ post annealing sample is studied using focus ion beam (FIB) after the molded sample had underwent a standard High Temperature Storage (HTS) at 150 °C for 1000 h. The in-situ annealing sample is studied using a transmission electron microscope (TEM) on a lamella with Cu–Al interface but without the presence of a mold compound. The result shows that the IMC formed are identified as CuAl₂, CuAl and Cu₉Al₄ via Energy Dispersive Spectrometer (EDX). These IMC are seen to grow increasingly with the duration of annealing process for both methods. The native Al oxide lines are seen for both methods and were embedded in between the IMC. The degradation starts at the ball periphery with cracks and voids at IMC are seen for the ex-situ postannealing sample but it is not observed under in-situ annealing sample. It is found that the degradation of the IMC is not caused by propagation of microcrack; instead it is assumed to be the influence of additive within the mold compound itself.     

Effect of annealing on the microstructure and bonding interface properties of Ag–2Pd alloy wire

This study investigated the mechanical and electrical properties of Ag–2Pd wire after thermal annealing. The thermal stability of the tested wire was examined by separately imposing static annealing at 275 °C, 325 °C and 375 °C in a vacuum environment. It was found that annealing the Ag–2Pd wire at 275 °C promoted the formation of a fully annealed structure with equiaxed grains. Annealing Ag–2Pd wire had a shorter heat affect zone (HAZ) length than those of conventional wire, and offered outstanding mechanical properties. A long-term electrical test found Ag₃(Pd)Al and Ag₂(Pd)Al compounds between the Ag–Pd ball and Al pad. These results confirmed the high-reliability properties of annealed Ag–2Pd wires for the wire bonding process.     

Effects of Cu/Al intermetallic compound (IMC) on copper wire and aluminum pad bondability

Copper wire bonding is an alternative interconnection technology that serves as a viable, and cost saving alternative to gold wire bonding. Its excellent mechanical and electrical characteristics attract the high-speed, power management devices and fine-pitch applications. Copper wire bonding can be a potentially alternative interconnection technology along with flip chip interconnection. However, the growth of Cu/Al intermetallic compound (IMC) at the copper wire and aluminum interface can induce a mechanical failure and increase a potential contact resistance. In this study, the copper wire bonded chip samples were annealed at the temperature range from 150/spl deg/C to 300/spl deg/C for 2 to 250 h, respectively. The formation of Cu/Al IMC was observed and the activation energy of Cu/Al IMC growth was obtained from an Arrhenius plot (ln (growth rate) versus 1/T). The obtained activation energy was 26Kcal/mol and the behavior of IMC growth was very sensitive to the annealing temperature. To investigate the effects of IMC formation on the copper wire bondability on Al pad, ball shear tests were performed on annealed samples. For as-bonded samples, ball shear strength ranged from 240-260gf, and ball shear strength changed as a function of annealing times. For annealed samples, fracture mode changed from adhesive failure at Cu/Al interface to IMC layer or Cu wire itself. The IMC growth and the diffusion rate of aluminum and copper were closely related to failure mode changes. Micro-XRD was performed on fractured pads and balls to identify the phases of IMC and their effects on the ball bonding strength. From XRD results, it was confirmed that the major IMC was /spl gamma/-Cu/sub 9/Al/sub 4/ and it provided a strong bondability.     

Microstructural evaluation and failure analysis of Ag wire bonded to Al pads

We found the failure mechanisms in Ag wire bonded to Al pads during the high-temperature-storage lifetime test (HTST) and the unbiased highly-accelerated temperature and humidity storage test (uHAST). The native oxide layer on the Al pads caused a ball lift. The moisture and the thermal energy during uHAST along with the Cl⁻ ion in epoxy molding compounds (EMCs) induced repetitive oxidation and reduction reactions of the Ag–Al intermetallic compounds (IMCs) with the Al pads. These repetitive reactions formed H₂ gas as a by-product causing the formation of a micro-crack. In addition, the alumina layer acted as a resistive layer in the Ag–Al IMCs. The phases of the Ag–Al IMCs were identified as Ag₂Al and Ag₃Al, and the growth rates of those IMCs were measured at 150 and 175 °C for 2000 h.     

Growth behavior of Cu/Al intermetallic compounds and cracks in copper ball bonds during isothermal aging

Copper wires are increasingly used in place of gold wires for making bonded interconnections in microelectronics. There are many potential benefits for use of copper in these applications, including better electrical and mechanical properties, and lower cost. Usually, wires are bonded to aluminum contact pads. However, the growth of Cu/Al intermetallic compounds (IMC) at the wire/pad interfaces is poorly understood, and if excessive would increase the contact resistance and degrade the bond reliability.To study the Cu/Al IMC growth in Cu ball bonds, high temperature aging at 250 °C for up to 196 h has been used to accelerate the aging process of the bonds. The Cu/Al IMCs growth behavior was then recorded and the IMC formation rate of 6.2 ± 1.7 × 10⁻¹⁴ cm²/s was obtained. In addition to the conventional yz-plane cross-section perpendicular to the bonding interface, a xy-plane cross-section parallel through the interfacial layers is reported. Three IMC layers were distinguished at the Cu/Al interfaces by their different colors under optical microscopy on the xy-plane cross-sections of ball bonds. The results of micro-XRD analysis confirmed that Cu₉Al₄, and CuAl₂ were the main IMC products, while a third phase is found which possibly is CuAl. During the aging process, IMC film growth starts from the periphery of the bond and propagates inward towards the centre area. Subsequently, with increased aging time, cavities are observed to develop between the IMC layer and the Cu ball surface, also starting at the bond periphery. The cavitation eventually links up and progresses toward the centre area leading to a nearly complete fracture between the ball and the intermetallic layer, as observed after 81 h.     

Ultra-fine pitch palladium-coated copper wire bonding: Effect of bonding parameters

Copper (Cu) wire bonding has become a mainstream IC assembly solution due to its significant cost savings over gold wire. However, concerns on corrosion susceptibility and package reliability have driven the industry to develop alternative materials. In recent years, palladium-coated copper (PdCu) wire has become widely used as it is believed to improve reliability. In this paper, we experimented with 0.6 ml PdCu and bare Cu wires. Palladium distribution and grain structure of the PdCu Free Air Ball (FAB) were investigated. It was observed that Electronic Flame Off (EFO) current and the cover gas type have a significant effect on palladium distribution in the FAB. The FAB hardness was measured and correlated to palladium distribution and grain structure. First bond process responses were characterized. The impact of palladium on wire bondability and wire bond intermetallic using a high temperature storage test was studied.     

High temperature storage reliability of palladium coated copper wire in different EFO current settings

In recent years, palladium-coated copper (PdCu) wire has been widely used in microelectronic packaging. The electronic flame off (EFO) current setting will affect the distribution of palladium (Pd) during the free air ball (FAB) formation of PdCu wire. This study investigates the influence of EFO current settings on Pd distribution in the FAB and the bonded ball. The distribution and concentration of Pd is observed by using an electron probe micro analyzer (EPMA). Mechanical tests are used to evaluate the bond strength of the first bond. A high temperature storage test (HTST) is performed on the packaged IC at 200 °C for 500 h and 1000 h.The results indicate that different EFO current settings cause either complete or partial Pd coverage on FABs, which directly affects the Pd distribution at the bonded ball interface. The wire pull and ball shear tests show the bond strength decrease under three EFO current settings after HTST. This confirms that although Pd can serve as a protective layer for the bonded ball against attack from halides from within the epoxy molding compound (EMC), incomplete Pd coating and formation of the alloy may actually aggravate the corrosion on bonded ball.     

Non-conductive film with Zn-nanoparticles (Zn-NCF) for 40 μm pitch Cu-pillar/Sn–Ag bump interconnection

Non-conductive film with Zn nano-particles (Zn-NCF) is an effective solution for fine-pitch Cu-pillar/Sn–Ag bump interconnection in terms of manufacturing process and interfacial reliability. In this study, NCFs with Zn nano-particles of different acidity, viscosity, and curing speed were formulated and diffused Zn contents in the Cu pillar/Sn–Ag bumps were measured after 3D TSV chip-stack bonding. Amount of Zn diffusion into the Cu pillar/Sn–Ag bumps increased as the acidity of resin increased, as the viscosity of resin decreased, as the curing speed of resin decreased, and as the bonding temperature increased. Diffusion of Zn nano-particles into the Cu pillar/Sn–Ag bumps are maximized when the resin viscosity became lowered and the solder oxide layer was removed. To analyze the effects of Zn-NCF on IMC reduction, IMC height depending on aging time was measured and corresponding activation energies for IMC growth were calculated. For the evaluation of joint reliabilities, test vehicles were bonded using NCFs with 0 wt%, 1 wt%, 5 wt%, and 10 wt% of Zn nano-particles and aged at 150 °C up to 500 h. NCF with 10 wt% Zn nano-particle showed remarkable suppression in Cu₆Sn₅ and (Cu,Ni)₆Sn₅ IMC compared to NCFs with 0 wt%, 1 wt%, and 5 wt% of Zn nano-particles. However, in terms of Cu₃Sn IMC suppression, which is the most critical goal of this experiment NCFs with 1 wt%, 5 wt%, and 10 wt% showed an equal amount of IMC suppression. As a result, it was successfully demonstrated that the suppression of Cu–Sn IMCs was achieved by the addition of Zn nano-particles in the NCFs resulting an enhanced reliability performance in the Cu/Sn–Ag bumps bonding in 3D TSV interconnection.     

Electrochemical studies of Pd-doped Cu and Pd-doped Cu-Al intermetallics for understanding corrosion behavior in wire-bonding packages

This study investigated the electrochemical characterizations in the field of wire metallurgy (Pd concentration) and molding compound chemistry (chloride concentration) to find ways to reduce metallic entities' susceptibility to corrosion at ball-pad interfaces. The open circuit potentials and potentiodynamic polarization curves of various metallic entities found in a Cu(Pd)-Al bonding interface were obtained in near-neutral electrolytes of 100 ppm, 20 ppm, and 1 ppm of NaCl in high-purity water. From X-ray diffraction spectra, it was found that Pd could be homogeneously incorporated into Cu₉Al₄, the Cu-rich intermetallic compound (IMC) also referred to as γ but not into CuAl₂, the Al-rich IMC also referred to as θ for arc-melted specimens. For Cu-Pd alloys, at a given chloride concentration, increasing Pd concentration causes the value of open-circuit potential (E_oc) to increase and corrosion current density (i_corr) to decrease. Likewise, for a given amount of Pd in Cu-Pd alloy, decrease in the NaCl concentration causes the value of E_oc to increase and i_corr to decrease. Interestingly, for high concentration of Pd as in the case of Cu-9Pd, E_oc and i_corr became less sensitive to the NaCl concentrations investigated. This can be attributed to the Pd enrichment on the corroding surface that reduces the anodic dissolution rate of Cu. For Pd-doped γ intermetallics, increasing Pd concentration causes a systemic increase in the value of E_oc, but at a lower concentration of Pd, the value of i_corr was increased. The addition of Pd to γ causes an increase in the cathodic current density due to the high cathodic activity of Pd, while the passivation of Al in γ reduces the extent of the anodic current density reduction due to the addition of Pd, which leads to a higher value of i_corr at a low Pd concentration. This is true even when the NaCl concentration is as low as 1 ppm. On the other hand, the influence of NaCl concentration on the E_oc and i_corr of γ IMC was always observed, even with Pd addition.     

Observations of IMC Formation for Au Wire Bonds to Al Pads

A materials investigation of Au wire bonds to Al pads revealed the evolution of a multiphase system whose terminal phases depended on the composition of the Au wire. Scanning transmission electron microscopy/energy-dispersive spectroscopy and electron diffraction data are presented for Au/Al wire bonds using both Pd-doped, 99% pure Au wire (2N) and 99.99% pure Au wire (4N) in the as-formed state, upon completion of overmold operations, and after reflow and aging. The reacted interfaces of both the 2N and 4N bonds were found to take on a bilayer intermetallic compound (IMC) microstructure that persisted with aging and phase changes; it is the interface of this bilayer that is believed to be susceptible to mechanical degradation. Pd was found to accumulate in the IMC near the Au/IMC interface for 2N wire bonds and appears to lead to a phase evolution different from that for 4N wire that may be responsible for enhanced reliability of the 2N wire bond with high-temperature aging.     

Reliability and failure analysis of fine copper wire bonds encapsulated with commercial epoxy molding compound

The small outline transistor (SOT) devices which were interconnected with 20 μm copper bonding wire and encapsulated with commercial epoxy molding compound (EMC) have been used in a series of reliability tests which including the thermal shock test, the electrical service life test, and the isothermal aging test. Isolated IMC spots were found at the bonding interface during the thermal shock test. No void or crack was observed even after 1500 cycles thermal shock test. No electrical failure was happened. The isolated IMC spots also occurred at the Cu/Al bonds interface after 500 h electrical operation. After 1000 h electrical operation, the sizes of the IMC spots were about 0.5 μm. No layered IMC was observed. The IMCs were formed at the bonding interface when the aging temperature was between 150 °C and 250 °C. Micro cracks and Kirkendall voids were observed with the aging time of 9 days at 200 °C and the aging time of 9 h at 250 °C. The minor element in the EMC, Sb, has reacted with Cu wire and Cu bond surface at 250 °C when the aging time was more than 16 h. Cu₃Sb was the main product of the diffusion reaction. With the aging time of more than 49 h, the Cu wire was crashed into pieces and the Cu bond periphery has been severely corroded.     

Planar copper-tin inter-metallic film formation on strained substrates

This paper presents the results of four-point bending tests investigating the effects of substrate strain on the growth ɛ of interfacial Cu–Sn inter-metallic compounds (IMCs). Test specimens were cut into strips, 27.5 mm in length and 5 mm in width, from 4 in. double polished silicon wafers. A very thin adhesion layer (Ta) was deposited on the silicon substrate by sputtering followed by a 10 μm thick layer of copper using electroplating. Finally, a 30 μm tin layer was deposited over the copper film also by electroplating. Samples were then placed in a furnace at 200 °C to undergo bending in order to introduce in-plane strain under tension or compression. Control samples also underwent the same treatment without applied strain. Our aim was to investigate the influence of substrate strain and aging time on the formation of IMCs (1.54 × 10⁻⁴, 2.3 × 10⁻⁴ and 3.46 × 10⁻⁴). The thickness and separation of each phase (Cu₃Sn) and η (Cu₆Sn₅) are clearly visible in scanning electron microscope images. Compressive strain and tensile strain both increased the thickness of the IMC layer during the aging process; however, the effects of compressive strain were more pronounced than those of tensile strain. We hypothesize that the increase in IMC thickness is related to the strain enhanced out-diffusion of Cu towards the solder as well as strain in the underlying lattice at the diffusion interface.     

Bond reliability under humid environment for coated copper wire and bare copper wire

There is growing interest in Cu wire bonding for LSI interconnection due to cost savings and better electrical and mechanical properties. Conventional bare Cu bonding wires, in general, are severely limited in their use compared to Au wires. A coated Cu bonding wire (EX1) has been developed for LSI application. EX1 is a Pd-coated Cu wire to enhance the bondability.Bond reliability at a Cu wire bond under a humid environment is a major concern in replacing Au wires. The bond reliability of EX1 and bare Cu was compared in the reliability testing of PCT and UHAST (Unbiased HAST). The lifetimes for EX1 and the bare Cu in PCT testing were over 800 h and 250 h, respectively. Humidity reliability was significantly greater for EX1. Continuous cracking was formed at the bond interface for the bare Cu wire. Corrosion-induced deterioration would be the root cause of failure for bare Cu wires. The corrosion was a chemical reaction of Cu-Al IMC (InterMetallic Compound) and halogens (Cl, Br) from molding resins. EX1 improves the bond reliability by controlling diffusion and IMC formation at the bond interface. The excellent humidity reliability of the coated Cu wire, EX1 is suitable for LSI application.     

Effects of Pd addition on Au stud bumps/Al pads interfacial reactions and bond reliability

The main purposes for developing low-alloyed Au bonding wires were to increase wire stiffness and to control the wire loop profile and heat-affected zone length. For these reasons, many alloying elements have been used for the various Au bonding wires. Although there have been many studies reported on wire strengthening mechanisms by adding alloying elements, few studies were performed on their effects on Au bonding wires and Al pad interfacial reactions. Palladium has been used as one of the important alloying elements of Au bonding wires. In this study, Au-1wt.%Pd wire was used to make Au stud bumps on Al pads, and effects of Pd on Au/Al interfacial reactions, at 150°C, 175°C, and 200°C for 0 to 1200 h thermal aging, were investigated. Cross-sectional scanning electron microscopy (SEM), energy-dispersive spectroscopy (EDS), and electron probe microanalysis (EMPA) were performed to identify intermetallic compound (IMC) phases and Pd behavior at the Au/Al bonding interface. According to experimental results, the dominant IMC was Au₅Al₂, and a Pd-rich layer was at the Au wire and Au-Al IMC. Moreover, Au-Al interfacial reactions were significantly affected by the Pd-rich layer. Finally, bump shear tests were performed to investigate the effects of Pd-rich layers on Au wire bond reliability, and there were three different failure modes. Cracks, accompanied with IMC growth, formed above a Pd-rich layer. Furthermore, in longer aging times, fracture occurred along the crack, which propagated from the edges of a bonding interface to the center along a Pd-rich layer.     

Interfacial behaviors of Sn-Pb,Sn-Ag-Cu Pb-free and mixed Sn-Ag-Cu/Sn-Pb solder joints during electromigration

SnPb-SnAgCu mixed solder joints with Sn-Pb soldering Sn-Ag-Cu Pb-free components are inevitably occurred in the high reliability applications. In this study, the interfacial behaviors in Sn-37Pb and Sn-3.0Ag-0.5Cu mixed solder joints was addressed and compared with Sn-37Pb solder joints and Sn-3.0Ag-0.5Cu solder joints with the influence from isothermal aging and electromigration. Considering the difference on the melting point between Sn-3.0Ag-0.5Cu and Sn-37Pb solder, two mixed solder joints: partial mixing and full mixing between Sn-Pb and Sn-Ag-Cu solders were reached with the peak reflowing temperature of 190 and 250 °C, respectively. During isothermal aging, the intermetallic compound (IMC) layer increased with aging time and its growth was diffusion controlled. There was also no obvious affect from the solder composition on IMC growth. After electromigration with the current density of 2.0 × 10³ A/cm², Sn-37Pb solder joints showed the shortest lifetime with the cracks observed at the cathode for the stressing time < 250 h. In Sn-3.0Ag-0.5Cu Pb-free solder joints, current stressing promoted the growth of IMC layer at the interfaces, but the growing rate of IMC at the anode interface was far faster than that at the cathode interface. Therefore, there existed an obvious polarity effect on IMC growth in Sn-Ag-Cu Pb-free solder joints. After Sn-37Pb was mixed with Sn-3.0Ag-0.5Cu Pb-free solder, whether the partial mixing or the full mixing between Sn-Pb and Sn-Ag-Cu can obviously depress both the crack formation at the cathode side and the IMC growth at the anode.     

Solid-state reaction in an Au wire connection with an Al-Cu pad during aging

In integrated-circuit packages, wire-bonding techniques are the preferred methods for making electrical connections between the chip and the lead frame. The influence of aging at 150°C up to 3,000 hr on interfacial reactions of Au wire bonded with the Al-Cu pad was investigated herein. To observe various intermetallic compounds (IMCs) with field-emission scanning electron microscopy, polished samples were ion-milled through precision etching and coating techniques. Three IMCs, i.e., (Al,Cu)Au₄, (Al,Cu)₃Au₈, and (Al,Cu)Au₂, were found between the Au wire and the Al-Cu pad in the as-assembled wire bond. After 168 hr of aging, Al₃(Au,Cu)₈ formed between (Al,Cu)₃Au₈ and (Al,Cu)Au₂ in the center of the wire bond. In fact, the Al-Cu pad, (Al,Cu)Au₂, and Al₃(Au,Cu)₈ IMCs were completely reacted after 500 hr of aging. (Al,Cu)₃)Au₈ was thus transformed into (Al,Cu)Au₄. Near the edge of the wire bonds, (Al,Cu)Au₂ formed between the Al-Cu pad and (Al,Cu)₃Au₈ during 500 hr of aging. For aging longer than 1000 hr, Al₃(Au,Cu)₈ was detected between (Al,Cu)₃Au₈ and (Al,Cu)Au₂. It was noted that the Al₃(Au,Cu)₈ IMC gradually grew with aging. With the aid of microstructure evolution and quantitative analysis, the interfacial phase transformation between the Au wire and the Al-Cu pad could be probed. In addition, the growth kinetics of (Al,Cu)Au₄ and (Al,Cu)₃Au₈ in the center of wire bonds were also evaluated and discussed.     

Effect of trace platinum additions on the interfacial morphology of Sn–3.8Ag–0.7Cu alloy aged for long hours

While the Sn–Ag–Cu (SAC) family of solders are considered good candidate as lead-free solder replacement materials, their relatively short processing history and application result in a host of materials as well as reliability problems. For good metallurgical bonding and electrical connection, a thin, even layer of intermetallic compound (IMC) is required but excessive growth of the IMC layer will cause various reliability problems. This is especially critical for miniaturized solder pitches in very large scale integration circuits. This work adopts the composite approach of adding 0.15 and 0.30 wt.% of Pt into Sn–3.8Ag–0.7Cu alloy to study the effect of these additions to the IMC layer thickness between the solder and substrate. Alloys were isothermally aged at 150 °C for up to 1000 h to observe contribution of Pt in suppressing excessive IMC growth. It was found that when more Pt was added to the alloy, the IMC layer became more even and continuous. Voids and IMC layer thickness were reduced. This is attributed to the role of Pt in replacing Cu in the solder and thus impeding excessive diffusion.     

Effect of type of thermo-mechanical excursion on growth of interfacial intermetallic compounds in Cu/Sn-Ag-Cu solder joints

This study reports the effect of different types of thermo-mechanical excursion (TME) on growth of intermetallic compound (IMC) layer formed at the interface of Sn-3.0%Ag-0.5%Cu solder and Cu substrate. 1 mm thick solder joints were prepared by reflowing at 270 °C for either 60 or 90 s. Solder joints were then exposed to one of the following TME: (i) isothermal aging at 60 °C for 48, 96 and 144 h, (ii) thermal cycling between − 25 and 125 °C for 100, 200 and 400 cycles, and (iii) thermo-mechanical cycling between − 25 and 125 °C for 100, 200 and 400 cycles, wherein a shear strain of 10% per cycle was imposed on the joint. Finite element analysis (FEA) was performed to ascertain the effects of imposed shear strain and volumetric expansion due to the formation of IMC on the stress field in the solder joint. Irrespective of the type of TME, the thickness of the IMC layer increased with time. However, IMC thickness increased relatively more rapidly under thermo-mechanical cycling condition, indicating strain enhanced coarsening of the interfacial IMC layer. FEA showed that high stresses were generated in the IMC layer and near solder-IMC interface due to the formation of IMC layer as well as imposed external strain, which might then not only enhance the IMC growth kinetics, but also affect the morphology of the IMC layer.