Double aberration correction in a low-energy electron microscope

The lateral resolution of a surface sensitive low-energy electron microscope (LEEM) has been improved below 4 nm for the first time. This breakthrough has only been possible by simultaneously correcting the unavoidable spherical and chromatic aberrations of the lens system. We present an experimental criterion to quantify the aberration correction and to optimize the electron optical system. The obtained lateral resolution of 2.6 nm in LEEM enables the first surface sensitive, electron microscopic observation of the herringbone reconstruction on the Au(1 1 1) surface.     

5.4 nm spatial resolution in biological photoemission electron microscopy

We report a spatial resolution of 5.4 nm in images of sarcoplasmic reticulum from rabbit muscle. The images were obtained in an aberration-corrected photoemission electron microscope with a hyperbolic mirror as the correcting element for spherical and chromatic aberration. In-situ measurements and numerical simulations confirm the low residual aberration in the instrument and indicate the ultimate resolution in this type of microscopy to be below 2 nm.     

Measuring and correcting aberrations of a cathode objective lens

In this paper I discuss several theoretical and practical aspects related to measuring and correcting the chromatic and spherical aberrations of a cathode objective lens as used in Low Energy Electron Microscopy (LEEM) and Photo Electron Emission Microscopy (PEEM) experiments. Special attention is paid to the various components of the cathode objective lens as they contribute to chromatic and spherical aberrations, and affect practical methods for aberration correction. This analysis has enabled us to correct a LEEM instrument for the spherical and chromatic aberrations of the objective lens.     

Emission microscopy and related techniques: resolution in photoelectron microscopy, low energy electron microscopy and mirror electron microscopy.

A unified treatment of the resolution of three closely related techniques is presented: emission electron microscopy (particularly photoelectron microscopy, PEM), low energy electron microscopy (LEEM), and mirror electron microscopy (MEM). The resolution calculation is based on the intensity distribution in the image plane for an object of finite size rather than for a point source. The calculations take into account the spherical and chromatic aberrations of the accelerating field and of the objective lens. Intensity distributions for a range of energies in the electron beam are obtained by adding the single-energy distributions weighted according to the energy distribution function. The diffraction error is taken into account separately. A working resolution is calculated that includes the practical requirement for a finite exposure time, and hence a finite non-zero current in the image. The expressions for the aberration coefficients are the same in PEM and LEEM. The calculated aberrations in MEM are somewhat smaller than for PEM and LEEM. The resolution of PEM is calculated to be about 50 A, assuming conventional UV excitation sources, which provide current densities at the specimen of 5 x 10(-5) A/cm2 and emission energies ranging up to 0.5 eV. A resolution of about 70 A has been demonstrated experimentally. The emission current density at the specimen is higher in LEEM and MEM because an electron gun is used in place of a UV source. For a current density of 5 x 10(-4) A/cm2 and the same electron optical parameters as for PEM, the resolution is calculated to be 27 A for LEEM and 21 A for MEM.     

Structural imaging of β-Si3N4 by spherical aberration-corrected high-resolution transmission electron microscopy

Modern transmission electron microscopes (TEM) allow utilizing the spherical aberration coefficient as an additional free parameter for optimizing resolution and contrast. By tuning the spherical aberration coefficient of the objective lens, isolated nitrogen atom columns as well as the Si–N dumbbells within the six-membered ring were imaged in β-Si₃N₄ along [0 0 0 1] and [0 0 0 1¯] projections with a dumbbell spacing of 0.94 Å in white atom contrast. This has been obtained with negative or positive spherical aberration coefficient. We clarify contrast details in β-Si₃N₄ by means of extended image calculations. A simple procedure has been shown for pure phase imaging, which is restricted to linear imaging conditions.     

In-focus electron microscopy of frozen-hydrated biological samples with a Boersch phase plate

We report the implementation of an electrostatic Einzel lens (Boersch) phase plate in a prototype transmission electron microscope dedicated to aberration-corrected cryo-EM. The combination of phase plate, C_s corrector and Diffraction Magnification Unit (DMU) as a new electron-optical element ensures minimal information loss due to obstruction by the phase plate and enables in-focus phase contrast imaging of large macromolecular assemblies. As no defocussing is necessary and the spherical aberration is corrected, maximal, non-oscillating phase contrast transfer can be achieved up to the information limit of the instrument. A microchip produced by a scalable micro-fabrication process has 10 phase plates, which are positioned in a conjugate, magnified diffraction plane generated by the DMU. Phase plates remained fully functional for weeks or months. The large distance between phase plate and the cryo sample permits the use of an effective anti-contaminator, resulting in ice contamination rates of <0.6 nm/h at the specimen. Maximal in-focus phase contrast was obtained by applying voltages between 80 and 700 mV to the phase plate electrode. The phase plate allows for in-focus imaging of biological objects with a signal-to-noise of 5-10 at a resolution of 2-3 nm, as demonstrated for frozen-hydrated virus particles and purple membrane at liquid-nitrogen temperature.     

High-order and multipole aberrations by aberration integral and direct ray-tracing methods

This paper describes methods for computing high-order aberrations and multipole aberrations in electron optical systems. Two approaches are discussed – the first involves obtaining aberration integrals for the high-order aberration coefficients, in terms of paraxial rays and axial field functions, while the second method uses direct ray-tracing through fields computed accurately by finite element or finite difference methods. The methods are illustrated by several examples, including a wide-angle focusing and deflection system with fifth-order aberrations, a combined magnetic and electrostatic lens, a ‘supertip’ ion source, an electron mirror with negative spherical and chromatic aberration, and a chromatically corrected quadrupole lens.     

Studies of a magnetically focused electrostatic mirror. II. Aberration corrections

A magnetically focused electrostatic mirror is shown to be able to correct the spherical and chromatic aberrations of a probe forming system simultaneously. The probe forming system comprises a uniform magnetic lens and a uniform electrostatic mirror. Previous theoretical investigations showed that the spherical and chromatic aberration coefficients of these two components are the same values but with opposite sign, whose combination will therefore be free from aberrations. The experimental arrangement used a solenoid to produce a uniform magnetic field, and a series of plate electrodes to produce a uniform electrostatic field. These fields are shown to satisfy the experimental requirements. By deliberately changing the extraction voltage to defocus the electron beam, the author is able to observe correction of chromatic aberration by one order of magnitude. By deliberately changing the lens field and the mirror field, the author is able to observe the reduction of the asymmetry caused by the spherical aberration, which the author believes also indicates correction by one order of magnitude.     

Medipix 2 detector applied to low energy electron microscopy

Low energy electron microscopy (LEEM) and photo-emission electron microscopy (PEEM) traditionally use microchannel plates (MCPs), a phosphor screen and a CCD-camera to record images and diffraction patterns. In recent years, however, MCPs have become a limiting factor for these types of microscopy. Here, we report on a successful test series using a solid state hybrid pixel detector, Medipix 2, in LEEM and PEEM. Medipix 2 is a background-free detector with an infinite dynamic range, making it very promising for both real-space imaging and spectroscopy. We demonstrate a significant enhancement of both image contrast and resolution, as compared to MCPs. Since aging of the Medipix 2 detector is negligible for the electron energies used in LEEM/PEEM, we expect Medipix to become the detector of choice for a new generation of systems.     

Adaptive aberration correction using a triode hyperbolic electron mirror

A converging electron mirror can be used to compensate spherical and chromatic aberrations in an electron microscope. This paper presents an analytical solution to a novel triode (three electrode) hyperbolic mirror as an improvement to the well-known diode (two electrode) hyperbolic mirror for aberration correction. A weakness of the diode mirror is a lack of flexibility in changing the chromatic and spherical aberration coefficients independently without changes in the mirror geometry. In order to remove this limitation, a third electrode can be added. We calculate the optical properties of the resulting triode mirror analytically on the basis of a simple model field distribution. We present the optical properties-the object/image distance, z(0), and the coefficients of spherical and chromatic aberration, C(s) and C(c), of both mirror types from an analysis of electron trajectories in the mirror field. From this analysis, we demonstrate that while the properties of both designs are similar, the additional parameters in the triode mirror improve the range of aberration that can be corrected. The triode mirror is also able to provide a dynamic adjustment range of chromatic aberration for fixed spherical aberration and focal length, or any permutation of these three parameters. While the dynamic range depends on the values of aberration correction needed, a nominal 10% tuning range is possible for most configurations accompanied by less than 1% change in the other two properties.     

On the benefit of the negative-spherical-aberration imaging technique for quantitative HRTEM

Employing an aberration corrector in a high-resolution transmission electron microscope, the spherical aberration C_S can be tuned to negative values, resulting in a novel imaging technique, which is called the negative C_S imaging (NCSI) technique. The image contrast obtained with the NCSI technique is compared quantitatively with the image contrast formed with the traditional positive C_S imaging (PCSI) technique. For the case of thin objects negative C_S images are superior to positive C_S images concerning the magnitude of the obtained contrast, which is due to constructive rather than destructive superposition of fundamental contrast contributions. As a consequence, the image signal obtained with a negative spherical aberration is significantly more robust against noise caused by amorphous surface layers, resulting in a measurement precision of atomic positions which is by a factor of 2–3 better at an identical noise level. The quantitative comparison of the two alternative C_S-corrected imaging modes shows that the NCSI mode yields significantly more precise results in quantitative high-resolution transmission electron microscopy of thin objects than the traditional PCSI mode.     

Design of an aberration corrected low-voltage SEM

The low-voltage foil corrector is a novel type of foil aberration corrector that can correct for both the spherical and chromatic aberration simultaneously. In order to give a realistic example of the capabilities of this corrector, a design for a low-voltage scanning electron microscope with the low-voltage foil corrector is presented. A fully electrostatic column has been designed and characterised by using aberration integrals and ray tracing calculations. The amount of aberration correction can be adjusted relatively easy. The third order spherical and the first order chromatic aberration can be completely cancelled. In the zero current limit, a FW50 probe size of 1.0 nm at 1 kV can be obtained. This probe size is mainly limited by diffraction and by the fifth order spherical aberration.     

Low voltage scanning electron microscopy

The scanning electron microscope (SEM) is usually operated with a beam voltage, V₀, in the range of 10–30 kV, even though many early workers had suggested the use of lower voltages to increase topographic contrast and to reduce specimen charging and beam damage. The chief reason for this contradiction is poor instrumental performance when V₀=1–3 kV, The problems include low source brightness, greater defocusing due to chromatic aberration greater sensitivity to stray fields, and difficulty in collecting the secondary electron signal. Responding to the needs of the semiconductor industry, which uses low V₀ to reduce beam damage, considerable efforts have been made to overcome these problems. The resulting equipment has greatly improved performance at low kV and substantially removes the practical deterrents to operation in this mode. This paper reviews the advantages of low voltage operation, recent progress in instrumentation and describes a prototype instrument designed and built for optimum performance at 1 kV. Other limitations to high resolution topographic imaging such as surface contamination, the de-localized nature of the inelastic scattering event and radiation damage are also discussed.     

Three dimensional atom probe imaging of GaAsSb quantum rings

Unambiguous evidence of ring-shaped self-assembled GaSb nanostructures grown by molecular beam epitaxy is presented on the basis of atom-probe tomography reconstructions and dark field transmission electron microscopy imaging. The GaAs capping process causes a strong segregation of Sb out of the center of GaSb quantum dots, leading to the self-assembled GaAs_xSb_1−x quantum rings of 20-30 nm in diameter with x∼0.33.     

Integration of a high‐NA light microscope in a scanning electron microscope

We present an integrated light‐electron microscope in which an inverted high‐NA objective lens is positioned inside a scanning electron microscope (SEM). The SEM objective lens and the light objective lens have a common axis and focal plane, allowing high‐resolution optical microscopy and scanning electron microscopy on the same area of a sample simultaneously. Components for light illumination and detection can be mounted outside the vacuum, enabling flexibility in the construction of the light microscope. The light objective lens can be positioned underneath the SEM objective lens during operation for sub‐10 μm alignment of the fields of view of the light and electron microscopes. We demonstrate in situ epifluorescence microscopy in the SEM with a numerical aperture of 1.4 using vacuum‐compatible immersion oil. For a 40‐nm‐diameter fluorescent polymer nanoparticle, an intensity profile with a FWHM of 380 nm is measured whereas the SEM performance is uncompromised. The integrated instrument may offer new possibilities for correlative light and electron microscopy in the life sciences as well as in physics and chemistry.     

Essential experimental parameters for quantitative structure analysis using spherical aberration-corrected HAADF-STEM

The accuracy of quantitative analysis for Z-contrast images with a spherical aberration (C_s) corrected high-angle annular dark-field (HAADF) scanning transmission electron microscope (STEM) using SrTiO₃(0 0 1) was systematically investigated. Atomic column and background intensities were measured accurately from the experimental HAADF-STEM images obtained under exact experimental condition. We examined atomic intensity ratio dependence on experimental conditions such as defocus, convergent semi-angles, specimen thicknesses and digitalized STEM image acquisition system: brightness and contrast. In order to carry out quantitative analysis of C_s-corrected HAADF-STEM, it is essential to determine defocus, to measure specimen thickness and to fix setting of brightness, contrast and probe current. To confirm the validity and accuracy of the experimental results, we compared experimental and HAADF-STEM calculations based on the Bloch wave method.     

Optimization of exit-plane waves restored from HRTEM through-focal series

Atomic-resolution transmission electron microscopy has largely benefited from the implementation of aberration correctors in the imaging part of the microscope. Though the dominant geometrical axial aberrations can in principle be corrected or suitably adjusted, the impact of higher-order aberrations, which are mainly due to the implementation of non-round electron optical elements, on the imaging process remains unclear. Based on a semi-empirical criterion, we analyze the impact of residual aperture aberrations on the quality of exit-plane waves that are retrieved from through-focal series recorded using an aberration-corrected and monochromated instrument which was operated at 300 kV and enabled for an information transfer of ∼0.05 nm. We show that the impact of some of the higher-order aberrations in retrieved exit-plane waves can be balanced by a suitable adjustment of symmetry equivalent lower-order aberrations. We find that proper compensation and correction of 1st and 2nd order aberrations is critical, and that the required accuracy is difficult to achieve. This results in an apparent insensitivity towards residual higher-order aberrations. We also investigate the influence of the detector characteristics on the image contrast. We find that correction for the modulation transfer function results in a contrast gain of up to 40%.     

Medium-range order in molecular materials: Fluctuation electron microscopy for detecting fullerenes in disordered carbons

During a fluctuation electron microscopy (FEM) study of disordered carbons, we found that samples containing C₆₀ exhibit a normalized variance peak at 7.1 nm⁻¹ that appears to be a unique indicator of tight curvature in layered materials. This peak is associated with the characteristic in-plane carbon–carbon bond distance of ∼0.14 nm in graphene. Diffraction from this spacing is normally forbidden in planar graphene (and graphite), but becomes allowed when the layer structure is interrupted. Such interruptions arise at the edges of graphite fragments and also when 5-rings are incorporated into a layer. We show that the curvature induced by a high density of 5-rings, such as that in C₆₀, can dominate the variance peak at 7.1 nm⁻¹. FEM simulations reveal that the variance peak at ∼7.1 nm⁻¹, which we label F₁, is one of several fullerene-signature peaks, with others occurring at Q values of 10.6 nm⁻¹ (F₂) and 12.4 nm⁻¹ (F₃). We conclude that FEM is a sensitive method for detecting dilute quantities of highly curved pentagon-rich fullerenes, such as C₆₀, when dispersed within disordered graphitic carbon.     

Transmission electron microscopy at 20 kV for imaging and spectroscopy

The electron optical performance of a transmission electron microscope (TEM) is characterized for direct spatial imaging and spectroscopy using electrons with energies as low as 20 keV. The highly stable instrument is equipped with an electrostatic monochromator and a C_S-corrector. At 20 kV it shows high image contrast even for single-layer graphene with a lattice transfer of 213 pm (tilted illumination). For 4 nm thick Si, the 200 reflections (271.5 pm) were directly transferred (axial illumination). We show at 20 kV that radiation-sensitive fullerenes (C₆₀) within a carbon nanotube container withstand an about two orders of magnitude higher electron dose than at 80 kV. In spectroscopy mode, the monochromated low-energy electron beam enables the acquisition of EELS spectra up to very high energy losses with exceptionally low background noise. Using Si and Ge, we show that 20 kV TEM allows the determination of dielectric properties and narrow band gaps, which were not accessible by TEM so far. These very first results demonstrate that low kV TEM is an exciting new tool for determination of structural and electronic properties of different types of nano-materials.     

Multiple scattering effects of MeV electrons in very thick amorphous specimens

Multiple scattering has an important influence on the analysis of microns-thick specimens with MeV electrons. In this paper, we report on effects of multiple scattering of MeV electrons on electron transmission and imaging of tilted and thick amorphous film specimens by experiment and theoretical analysis. Electron transmission for microns-thick epoxy-resin and SiO₂ specimens calculated by the multiple elastic-scattering theory is in good agreement with measurements in the ultrahigh voltage electron microscope (ultra-HVEM) at Osaka University. Electron transmission and electron energy are then presented in an approximate power law. The bright-field ultra-HVEM images of gold particles on the top or bottom surfaces of 5 and 15 μm thick specimens further illustrate the effect of multiple scattering on image quality. The observed top‐bottom effect for the very thick specimens appears to be mainly caused by multiple elastic scattering. With increase in the accelerating voltage from 1 to 2 MV, image blurring, contrast, the signal-to-noise ratio, and the top‐bottom effect are improved because of reduction in the influence of multiple scattering. However, the effect of specimen thickness on image blurring is shown to be stronger than that of accelerating voltage. At the 2 MV accelerating voltage, the 100 nm gold particle can be imaged with less blurring of ∼4 nm when located at the bottom surface of a 15 μm thick epoxy-resin specimen.