A 3-V 4.25-Gb/s Laser Driver with 0.4-V Output Voltage Compliance

The design of a 155-Mb/s–4.25-Gb/s laser driver in SiGe BiCMOS is described. A large output voltage compliance range that allows DC coupling to the laser diode is achieved with a translinear pseudo-differential output driver. Active back-termination is provided at the modulation output pins. Careful design of the level shift stage affords low deterministic jitter over a very wide range of bit rates. The dynamic performance is preserved over a wide range of modulation current with a segmented driver slice scheme.     

一种应用于8B/10B编码串并转换电路的低功耗LVDS接收器设计

低电压差分信号(LVDS)是串并转换电路(SerDes)的一种主流接口技术.本文设计并实现了一种适合于8B/10B编码串并转换电路的LVDS接收器(Receiver).本设计的指标完全兼容IEEEStd1593.3-1996标准.它支持最大0.05 V至2.35 V的共模电平输入范围,最小100 mV的差模输入,能够在至少40英寸FR4带状线上达到1.6 Gb/s的接收速率,平均功耗3 mw.电路设计基于0.18μm1.8 V/*3.3 VCMOS工艺,同时采用了3.3 V器件和1.8 V器件.     

基于VLSI的高速LVDS接口设计

LVDS接口电路是高速数据转换芯片重要模块之一,通常采用的LVDS接口电路设计方法存在着设计成果不能重复利用的弊端.而且日前已经提出的接口电路结构也不方便电路的可重配置.为了更好地在不同系统中重复利用已经设计好的单元,提出一种通用的且大部分参数可调节的LVDS接口电路.接收电路和驱动电路的设计和仿真都是基于TSMC的0.25μmCOMS工艺库,且能封装成模拟IP模块以便于在各种大型电路系统(如:DAC、ADC)的设计过程的直接调用.仿真结果表明该电路能够工作在500MHz时钟频率下而且满足IEEE 1596.3接口标准.     

Integrated 100-Gb/s ETDM Receiver

Ethernet in backbone networks has the potential to provide high-performance and cost-efficient networking solutions. Driven by the rapid growth of Ethernet traffic, it is likely that, in the transport network, the next step in terms of the data rate will be 100 Gb/s. In this paper, we report on an integrated electrical-time-division-multiplexing (ETDM) receiver for 100/107 Gb/s, which comprises 1 : 2 demultiplexing and clock-and-data recovery on a single chip. The ETDM receiver was tested successfully in 100- and 107-Gb/s transmission experiments over 480-km dispersion-managed fiber     

A 5-Gb/s OEIC with voltage-up-converter

In this paper (based on our previous paper at ESSCIRC 2004, "A 2.4 GHz-Bandwidth OEIC with Voltage-Up-Converter," but new results for 4 Gb/s and 5 Gb/s have been added), an optoelectronic integrated circuit (OEIC) with an integrated voltage-up-converter (VUC) to enhance the frequency response of an integrated pin photodiode is presented. With the VUC a voltage of 11 V is generated on the chip without any additional external components. Thus, for a single-supply environment of 5 V the bandwidth of the OEIC is increased from 1.5 to 2.4 GHz. For data rates of 1, 3, 4, and 5 Gb/s at a bit error rate of 10/sup -9/, sensitivities of -29.3, -24.3, -22.9, and -20.5 dBm, respectively, were measured at a wavelength of 660 nm. For the implementation of the OEIC a modified 0.6-/spl mu/m silicon BiCMOS technology with f/sub T/=25 GHz is used.     

A Single-Chip 2.5-Gb/s CMOS Burst-Mode Optical Receiver

This paper describes the design of a 2.5-Gb/s burst-mode optical receiver in a 0.18-mum CMOS process. A dual-gain-mode transimpedance amplifier (TIA) with constant damping factor control is proposed to tolerate a wide dynamic range input signal. By incorporating an automatic threshold tracking circuit (ATC), the TIA and limiting amplifier (LA) are dc coupled with feedforward offset cancellation. Dual-band filters are adopted in the ATC for a rapid response time while keeping the tracking error small. By integrating both a TIA and a post-LA in a single chip, the burst-mode receiver provides a conversion gain of 106 dBmiddotOmega in the high gain mode, 97 dBmiddotOmega in the low gain mode, and a -3-dB bandwidth of 1.85 GHz. The measured input sensitivity, overload level, and dynamic range of the optical receiver are -19 dBm, -2 dBm, and 17 dB, respectively. The response time is less than 50 ns. Operating under a single 1.8-V supply, this chip dissipates only 122 mW.     

Self-Coherent Decision-Feedback-Directed 40-Gb/s DQPSK Receiver

A novel 40-Gb/s differential quadrature phase-shift keying receiver is theoretically proposed, improving direct detection by 4.2 dB for self-phase-modulation-limited single-channel transmission, approaching ideal coherent homodyne performance using a recirculating delay line interferometric integrated-optical circuit front-end combining decision feedback and nonlinear phase-noise compensation     

一种2.5 Gb/s LVDS接收器设计

基于SMIC 0.18 μm 1P6M 标准CMOS工艺,设计了一种2.5 Gb/s LVDS接收器电路。仿真结果表明,所设计的LVDS电路参数符合LVDS标准,LVDS接收器的输出信号上升沿抖动约为0.76 ps,有效版图面积约为(83×44) μm²,能应用于高速数据接口。     

A 32-Gb/s On-Chip Bus With Driver Pre-Emphasis Signaling

This paper describes a differential current-mode bus architecture based on driver pre-emphasis for on-chip global interconnects that achieves high-data rates while reducing bus power dissipation and improving signal delay latency. The 16-b bus core fabricated in 0.25- $mu$m complementary metal–oxide–semiconductor (CMOS) technology attains an aggregate signaling data rate of 32 Gb/s over 5–10-mm-long lossy interconnects. With a supply of 2.5 V, 25.5–48.7-mW power dissipation was measured for signal activity above 0.1, equivalent to 0.80–1.52 pJ/b. This work demonstrates a 15.0%–67.5% power reduction over a conventional single-ended voltage-mode static bus while reducing delay latency by 28.3% and peak current by 70%. The proposed bus architecture is robust against crosstalk noise and occupies comparable routing area to a reference static bus design.      

A 6.0-mW 10.0-Gb/s Receiver With Switched-Capacitor Summation DFE

A low-power receiver with a one-tap decision feedback equalization (DFE) was fabricated in 90-nm CMOS technology. The speculative equalization is performed using switched-capacitor-based addition at the front-end sample-hold circuit. In order to further reduce the power consumption, an analog multiplexer is used in the speculation technique implementation. A quarter-rate-clocking scheme facilitates the use of low-power front-end circuitry and CMOS clock buffers. The receiver was tested over channels with different levels of ISI. The signaling rate with BER<10^-12 was significantly increased with the use of DFE for short- to medium-distance PCB traces. At 10-Gb/s data rate, the receiver consumes less than 6.0 mW from a 1.0-V supply. This includes the power consumed in all quarter-rate clock buffers, but not the power of a clock recovery loop. The input clock phase and the DFE taps are adjusted externally     

Architecture and Implementation of a Low-Power LVDS Output Buffer for High-Speed Applications

This paper presents a new detailed analysis of low-voltage differential signaling (LVDS) output buffers that are intended for use in high-speed integrated circuits. Three theoretically possible architectures of a LVDS output driver are discussed in rigorous detail, resulting in the recognition of the most power-conserving circuit configuration. An innovative realization of this identified low-power architecture is presented in this paper along with computer simulation results and test lab measurement data. The novel LVDS driver is designed using a unique hetero-junction bipolar transistor structure. Computer simulation results show total current consumption of 6.3 mA for the bipolar driver at a 1-GHz clock frequency while operating from a positive supply voltage between 1.7 and 3.3 V, as well as demonstrate full stage compliance with all the requirements of the IEEE 1596.3–1996 standard. The presented version of the buffer was utilized in a multiplexer/demultiplexer chip set that was fabricated in a modern 50-GHz-$f _T$SiGe technology. Test results of the LVDS output buffer taken from five different chip samples reveal high-quality output eyes with more than 0.99 UI opening and close matching between the measured parameters and simulation results.     

A 140-Mb/s to 1.82-Gb/s Continuous-Rate Embedded Clock Receiver for Flat-Panel Displays

A wide-range fast-locking embedded clock receiver, which can provide a continuous data rate of 140 Mb/s to 1.82 Gb/s in a 0.25-mum CMOS process, is presented. A fast lock time of 7.5 mus and a small root-mean-square jitter of 15 ps are achieved by using the proposed frequency-band selection and frequency acquisition schemes, as well as a simple linear-phase detector. The implemented embedded clock receiver occupies 2.00 mm² and consumes currents of 44 and 137 mA at 140 Mb/s and 1.82 Gb/s, respectively, including input/output currents.     

A 5-mW 6-Gb/s Quarter-Rate Sampling Receiver With a 2-Tap DFE Using Soft Decisions

A quarter-rate sampling receiver with a 2-tap decision feedback equalizer (DFE) is implemented in 90-nm CMOS technology for low-power I/O links. An analog sampling and soft-decision technique is introduced to relax the timing critical feedback path of the DFE. The shortened critical path enables better power performance. Error rates are below the measurement capability of 10^-12 with 2³¹-1 PRBS at 6 Gb/s, with an 80-mV differential launch amplitude through a channel with 6.2-dB attenuation at 3 GHz. The receiver draws 4.08 mA from a 1.0-V supply     

A Low-Power Class-AB Negative-Feedback Output Amplifier for a 1 V LW Receiver

The design and the measurement results are presented of a low-voltage (1 V) class-AB negative-feedback output amplifier. The amplifier is designed for use in a single-chip LW receiver, which can be put completely in the ear, supplied by a 1 V power supply and is capable of driving a load with an impedance of 30 . The maximum output current of the amplifier is approximately 2.5 mA and its quiescent current is approximately 100 A. This high efficiency is obtained by means of biasing two of the three amplifying stages in class-AB operation. With the aid of negative feedback, the total harmonic distortion for a single 1 kHz tone at 1 mA level is kept below 1%. The output amplifier is integrated in a bipolar process which has vertical NPN transistors with a maximum f _T of 5 GHz and lateral PNP transistors with a maximum f _T of 20 MHz.     

Real-Time 2.5 GS/s Coherent Optical Receiver for 53.3-Gb/s Sub-Banded OFDM

A real-time receiver for the coherent optical orthogonal frequency-division multiplexing (CO-OFDM) detection is realized in a field-programmable gate array (FPGA). Each building block of the CO-OFDM receiver, such as symbol synchronization, channel estimation, and phase estimation is described and discussed in respect of special technical requirements of real-time implementation. The real-time receiver is successfully demonstrated with a receiver sampling rate of 2.5-Gsamples/s to receive a subband of 53.3-Gb/s multiband CO-OFDM signal. The measured bit error rate (BER) is as low as $3.7times 10^{-8}$ which is a record in real-time or offline CO-OFDM demonstration.      

一种具有预驱动电路的低抖动LVDS驱动器

传统LVDS驱动器由于电源不稳定、驱动器与传输线之间阻抗不匹配等不良因素的影响,输出波形会出现抖动,质量下降.在传统LVDS驱动器的基础上,设计了一种新颖的LVDS驱动电路.该电路采用预驱动技术,控制输出电压的翻转和减少总输入电容,输出波形较为平滑.采用0.18μm工艺对电路进行仿真.结果显示,电路输出波形摆幅为0.345 V,输出共模电压为1.17V,总输入电容为72 fF.     

A 5-6.4-Gb/s 12-channel transceiver with pre-emphasis and equalization

A 5-6.4 Gb/s transceiver, consisting of a parallel 12-channel transmitter (Tx), 12-channel receiver (Rx), clock generators based on LC-VCO phase-locked loops (PLLs), and a clock recovery unit, was developed. The Tx has a five-tap pre-emphasis filter, and the Rx has an equalizer with an intersymbol interference (ISI) monitor. Monitoring the ISI enables fine adjustment of loss compensation. The pre-emphasis filter in the Tx and the equalizer in the Rx compensate for transmission losses of up to 20 dB at 6.4 Gb/s, respectively. Both the Tx and Rx channels, including the PLLs, are 3.92 mm/sup 2/ in area. The transmitter dissipates 150 mW/channel at 6.4 Gb/s when compensating for a loss of 20 dB, and the receiver 90 mW/channel when compensating for the same loss.     

A 25-mV-Sensitivity 2-Gb/s Optimum-Logic-Threshold Capacitive-Coupling Receiver for Wireless Wafer Probing Systems

A high-sensitivity capacitive-coupling receiver is presented for wireless wafer probing systems. The receiver with the optimum logic threshold (OLT) achieves the highest sensitivity of 25 mV at the data rate of 2 Gb/s in 0.18-mum CMOS. The OLT receiver increases the communication distance by more than four times while providing tolerance against distance-voltage-area variations.     

CMOS 5 Gb/s串行接收器

设计了一个使用0.13μm CMOS工艺制造的低电压低功耗串行接收器。它的核心电路工作电压为1V,工作频率范围从2.5 GHz到5 GHz。接收器包括两个1:20的解串器、一个输入信号预放大器以及时钟恢复电路。在输入信号预放大器中设计了一个简单新颖的电路,利用前馈均衡来进一步消除信号的码间串扰,提高接收器的灵敏度。测试表明,接收器功耗45 mW。接收器输入信号眼图闭合0.5UI,信号差分峰-峰值150 mV条件下误码率小于10~(-12)。接收器还包含了时钟数据恢复电路,其中的相位插值器通过改进编码方式,使得输出信号的幅度能够保持恒定,并且相位具有良好的线性度。     

具有时钟提取及倍频功能的 5Gb/s全速率复接器设计

采用SMIC 0．18μm CMOS工艺设计了一个具有时钟提取及倍频功能的5Gb／s全速率2：1复接电路。整个电路由两部分构成,即：全速率2：1复接器和时钟提取及倍频环路。其中,后者从一路2．5Gb／S输入数据中提取出时钟信号,并为前者提供所需的2．5GHz及5GHz的时钟。Pottbgcker鉴频鉴相器被运用以提高环路的捕获带宽。设计广泛采用了具有速度高和抗干扰能力强等诸多优点的电流模逻辑。仿真结果表明,本电路无需任何参考时钟,无需外接元件及手动相位调整或辅助捕获,就能可靠地工作在2．4～2．9Gb／s的输入数据速率上。芯片面积为812μm&#215;675μm。电源电压1．8V时,功耗为162mW。