Asymmetric excitation of symmetric single-mode Y-junctions: theradiation mode effects

The asymmetric excitation of a symmetric single-mode Y-junction is studied using two techniques: the standard BPM and a modal analysis based on the radiation spectrum. The authors found that the power splitting between the two outputs of the junction is strongly dependent on the coherent coupling of the odd radiation modes excited at the input of the junction. A GaAs-GaAlAs single-mode junction excited by a single-mode fiber is experimentally tested and a splitting ratio as high as 12 dB is obtained. Such a result, which could not be explained if the radiation field is neglected, proposes new applications of the Y-junction like an optical displacement sensor with a high sensitivity on the order to 5 dB/μm     

Analyse théorique et caractérisation expérimentale ďune jonction Y intégrée utilisée comme capteur de déplacement

The coherent coupling of radiation modes in symmetric single-mode Y-junction excited by a single mode fiber is studied in this work. Using the bpm (beam propagation method) we find that the power splitting between the two outputs of the junction depends strongly on the fiber displacement with respect to the junction axis of symmetry. A GaAs/GaAlAs single mode junction is tested and the experimental measurements show a splitting ratio as high as 12 dB that could not be explained if the radiation field is neglected. The experimental results confirm the theoretical predictions that take into account the propagation of radiation modes in the structure. These results propose the structure to be used as an integrated optical displacement sensor with a sensitivity in the order of 5 dB/μm and a dynamic range within 4 to 5 μm.     

小型化高集成宽带光收发组件

当前分立光子器件的体积和成本严重制约着微波光子技术在雷达系统中的应用。受限于当前的集成能力和材料体系,微波光子单片集成芯片短时间内难以实现工程应用。为满足雷达等应用场景对高集成微波光子器件的迫切需要,研制了一种新型小型化高集成光收发组件。该组件采用光电异构集成封装技术,将MZM调制器芯片、微波芯片、探测器芯片以及光环形器、波分复用器进行高度集成,单模块体积仅为85 mm×35 mm×10 mm,与传统MZM调制器体积相当。实验结果表明,其性能可与传统分立元器件相媲美。在6~18 GHz范围内,组件能够实现±1.5 dB的平坦度,上行能够实现18 dB以上的增益,下行能够实现?1 dB以上的增益,且链路噪声系数小于30 dB,平面化、小型化设计使其能够应用于相控阵雷达、电子战等多种应用场景,具有广阔的应用前景。     

Ultrahigh-Bandwidth Silicon Photonic Nanowire Waveguides for On-Chip Networks

An investigation of signal integrity in silicon photonic nanowire waveguides is performed for wavelength-division-multiplexed optical signals. First, we demonstrate the feasibility of ultrahigh-bandwidth integrated photonic networks by transmitting a 1.28-Tb/s data stream (32 wavelengths times 40-Gb/s) through a 5-cm-long silicon wire. Next, the crosstalk induced in the highly confined waveguide is evaluated, while varying the number of wavelength channels, with bit-error-rate measurements at 10 Gb/s per channel. The power penalty of a 24-channel signal is 3.3 dB, while the power penalty of a single-channel signal is 0.6 dB. Finally, single-channel power penalty measurements are taken over a wide range of input powers and indicate negligible change for launch powers of up to 7 dBm.     

2$,times,$ 2 InP Optical Switching Matrix Based on Carrier-Induced Effects for 1.55-$mu$m Applications

This letter demonstrates a 2times2 low optical crosstalk and low power consumption switching matrix device based on carrier-induced effects on an InP substrate. The matrix device comprises two digital optical switches (DOSs) with a wide multimode Y-junction associated with a sinusoidal passive integrated optical circuit with an optimized X-crossing. The passive structure was designed using a two-dimensional beam propagation method (BPM) and the entire InP-InGaAsP-InP DOS was designed using a semivectorial three-dimensional BPM. The fabricated 2times2 InP switching matrix heterostructure with lambdag=1.3 mum exhibits optical crosstalk as low as -30.5 dB for drive current of 52 mA at 1.55-mum wavelength. Maximum crosstalk change of 4 dB is measured under optical polarization variation.     

A WDM receiver photonic integrated circuit with net on-chip gain

We demonstrate a photonic circuit with an optical preamplifier, a WDM filter and a fast photodetector integrated on the same chip. The passive integrated filter is formed by an aspheric waveguide lens and a planar Bragg grating. This arrangements yields narrow filter response (8 Å width at -3 dB is demonstrated) and high rejection ratio of 24 dB. The optical preamplifier consisting of strained multi-quantum well layers provides sufficient amplification to overcome the passive losses. Response curves demonstrate net on-chip gain with low ripple     

N×N optical switch based on cascaded microring resonators

An N×N optical switch based on cascaded microring resonators on chip is proposed. As an example, the 4×4 optical switch is further investigated. It is successfully demonstrated that its insertion loss is relatively low as 2.2 dB, the crosstalk is negligible, and the extinction ratio (ER) is as large as 130 dB. Thermal tuning is employed to make the microrings be in resonance or not, which leads to a response time of several hundred microseconds. Alternatively, doping the desired waveguide regions with p-type or n-type dopants is able to achieve a better response time of several nanoseconds. The proposed design is easily integrated to a large scale with less microring resonators, which ensures the compact size and the low power consumption.     

Lossless stripe waveguide optical beam splitter: modeling of theY-structure

We present a theoretical model of a loss-compensated symmetric Y-junction acting as an optical beam splitter. We consider silica (SiO ₂) channel waveguides which are assumed to be highly doped with Er³⁺. The model was developed using the beam propagation method (BPM) and a fast-Fourier-transform (FFT)-based algorithm. The analysis showed that considerable gain levels, about 4.2 dB/cm at each port of the Y-junction, can be achieved for erbium concentration 2.5×10²⁰ ions/cm³, signal power 1 μW and pump power 250 mW     

Development of new practical approach to integrated photonics based on biomimetic molecular self-assembled

The first developments for a new integrated photonics using optical evanescent coupling from organic microstructures to fibres of hybrid nanotubes (NT) are reported. Microstructures are organic discs acting as photon reservoirs, integrated on a photonic chip fabricated by microtechnologic processes. Biomimetic peptidic/silica NT are realised by molecular self-assembly allowing centimetres long fibres of NT. Such heterostructures have been included directly on the organic as an innovative solution based on an NT in situ chip-approach. The latter allowed us to obtain an adequate evanescent coupling localised between micronic-discs and fibrous structures. Highlighted is a specific photonic propagation along various heterostructured-T-fibres featuring distances beyond the centimetre and losses inferior to 1 dB/cm. It presents an advantageous confinement marked with strong energy localisations between NT.     

基于3 μm-SOI的波分复用/解复用器与电吸收型VOA的单片集成

波分复用/解复用器与可调光衰减器的是光通信系统中的重要元器件。为了得到制备工艺简单、响应速度快的二者的单片集成芯片,并且考虑到其与其他不同光器件的集成可能性,在绝缘体上硅材料制作了16通道、信道间隔200 GHz的阵列波导光栅复用/解复用器与电吸收型可调光衰减器的单片集成。该器件的片上损耗小于7 dB,串扰小于-22 dB。电吸收型VOA在20 dB的衰减量下的功耗为572 mW （106 mA,5.4 V）。此外,该器件可以实现光功率的快速衰减,在0~5 V的外加方波电压下,VOA上升及下降时间分别为50.5 ns和48 ns。     

单片集成电吸收调制分布反馈激光器

提出一种选择区域外延双有源区叠层(SAG-DSAL)结构新技术,基于此技术设计研制了单片集成电吸收调制激光器(EML),SAG-DSAL-EML管芯的阈值电流为20mA,工作电流为100mA时的出光功率为10mw,由吸收调制器(EAM)加-3V偏压时的消光比为12dB,实现了简化制作工艺并提高器件性能的预期目的,有望用...     

Silica-based 8×8 optical matrix switch module with hybridintegrated driving circuits and its system application

A compact, low-crosstalk 8×8 optical matrix switch module has been developed. A thermooptic switch chip and driving circuits with TTL interfaces are integrated on a 100-mm² ceramic substrate. It achieved a low insertion loss of 10.0 dB, a low crosstalk level of -25.9 dB, and had excellent stability in practical operation. A photonic intermodule connector for electronic switching systems in the near future is also demonstrated through the use of these optical switch modules     

单片集成CMOS光接收前端电路设计

文中采用SMIC 0.18μm CMOS工艺设计了适用于芯片间光互连的的接收机前端放大电路,将跨阻放大器(TIA)和限幅放大器(LA)集成于同一块芯片中.跨阻放大器采用调制型共源共栅(RGC)结构来提高其带宽,限幅放大器采用二阶有源反馈结构和有源电感负载来获得高的增益带宽积.整个接收机前端放大电路具有85dB中频增益,-3dB带宽为4.36GHz.芯片的面积为1mm×0.7mm,在1.8V电源电压下功耗为144mW.     

Multimode power divider using radiation from tight bendingwaveguide

By using a large-core and high-Δ polymeric optical waveguide, we developed the mode-division power divider which enables wide-angle power dividing, and compared it with a conventional Y-junction power divider. The core size and Δ were 100×100 μm² and 5.4%, respectively. At the conditions of 25° branching angle and 50/50 splitting ratio, the excess loss of the mode-division and Y-junction were estimated to be 2.5 and 9.5 dB, respectively. These values were including 1.2 dB fiber-connecting loss. Furthermore, we observed that both the mode-division type outputs have almost the same modal power distribution as the input     

多路集成有机聚合物光子学射频移相器

本文简要介绍一种新型的集成光子学射频移相器,并对移相器的工作原理及特点进行分析。该新型移相器能够实现对每一阵元的相移量进行独立的调控、相移线性度大、插入损耗小、相移精度和幅度稳定度高等优点。结果表明,输出的射频信号的功率波动小于3dB,得到360°连续线性相移。     

基于端面耦合的InP基激光器/硅光波导混合集成技术研究

针对硅光子集成回路缺少实用化光源的问题,提出了一种1.55μm波段InP基FP激光器芯片、InP基PIN光电探测器芯片与硅光波导芯片集成模块的设计与制备方法。使用CMOS工艺兼容的硅光无源器件制备工艺,设计并制备了倒拉锥型端面耦合器,与锥形透镜光纤耦合效率为36.7%。采用微组装对准技术将激光器芯片与硅波导芯片耦合、UV固化胶固化后耦合效率为35.8%,1 dB耦合对准容差横向为1.2μm,纵向为0.95μm。     

795nm单模垂直腔面发射激光器

针对铷原予能级跃迁对光谱的特殊需求,设计并制备了795 nm单模垂直腔面发射激光器(VCSEL).根据对VCSEL的光场和模式的分析和计算结果,设计了单模VCSEL芯片结构.采用MOCVD技术生长了外延结构,制备了不同有源区直径的氧化限制型VCSEL芯片并进行了测试.当有源区直径从6 μm减小到3μm时,VCSEL芯片的边模抑制比(SMSR)由8.76 dB增加到34.05 dB,阈值电流由0.77 mA减小到0.35 mA.有源区直径为6,5,4和3μm的VCSEL芯片的输出功率分别为0.37,0.46,0.58和0.44 mW,有源区直径为4μm的VCSEL芯片的远场为圆形光束,发散角为15°.85℃时3.5 μm有源区直径的VCSEL芯片输出功率为0.125 mW,激射波长为795.3 nm.室温3 dB带宽大于8 GHz,满足了铷原子传感器对VCSEL单模光谱、输出功率及调制速率的要求.     

Topology optimised broadband photonic crystal Y-splitter

A planar photonic crystal waveguide Y-splitter that exhibits large-bandwidth low-loss 3 dB splitting for TE-polarised light has been fabricated in silicon-on-insulator material. The high performance is achieved by utilising topology optimisation to design the Y-junction and by using topology optimised low-loss 60/spl deg/ bends. The average excess loss of the entire component is found to be 0.44/spl plusmn/0.29 dB for a 100 nm bandwidth, and the excess loss due to the Y-junction is found to be 0.34/spl plusmn/0.30 dB in a 175 nm bandwidth.     

Compact, broadband, polarisation-insensitive 3 dB optical powersplitter on InP

The authors have demonstrated a compact (70 μm free-space radiation length), potentially robust, broadband (1.53-1.56 μm), polarisation-insensitive 3 dB optical power splitter based on InP using free-space radiative input-output coupling. This passive, 3 dB splitter is compatible with photonic integrated circuits