基于数据采集板卡USB-4704和LabVIEW的虚拟仪器测试系统

论文介绍了一种基于研华USB-4704数据采集板卡和图形化编程软件Lab VIEW的虚拟仪器测量系统,该系统实现了对薄膜压力传感器(Flexiforce Sensors A201)调理电路中电压信号的实时采集、处理、存储,从而可以有效的测量施加在薄膜压力传感器的法向载荷。测试系统主要由薄膜压力传感器、传感器调理电路、数据采集板卡USB-4704、应用开发软件Lab VIEW组成。     

一种电容薄膜真空计检测电路的设计

针对电容薄膜真空计的电容检测精度要求高以及非线性的问题,文中设计了一种基于二极管桥的检测电路。该电路检测电容薄膜真空计的测量电容与参考电容的差值,能有效抑制共模噪声的干扰,并采用负反馈的方法对非线性进行补偿。仿真表明负反馈的方法能够有效降低真空计的非线性,在仿真数据上非线性度从7.27%降低到0.662%。实际测试结果表明该电路能准确地检测电容,电路灵敏度为1.85 V/pF,非线性度为0.4%,电路稳定性较好。     

钽铝薄膜中功率衰减器的设计

介绍了一种用于微波电路的中功率薄膜衰减器的设计与制作。该衰减器是由铝原子含量为50％的Ta／Al合金薄膜制成。测试结果表明其性能优良。     

基于ARM的高阻气敏传感器测试电路

将ARM7应用到气敏传感器中,利用其强大的数据计算处理能力及控制能力,结合气敏薄膜材料的高阻值特点,设计出了显示气敏元件阻值及其所处气体浓度的测试电路。该电路以LPC2131实时监测电源电压,自动调整占空比,实现对温度的准确控制,并测量气敏薄膜的电阻。经气体浓度和元件阻值的校准后,电路可显示被测气体浓度,同时提供一个友好的用户界面,并具备报警功能,实现了智能气敏传感器的测量电路。完全满足气敏测试需要,电阻的测量精度达到±0.2%。     

基于压电材料的薄膜型声学超材料隔声性能研究

本文利用COMSOL软件研究了一种基于压电材料的薄膜型声学超材料的隔声性能,分析了压电块外接电路的电阻和电感对其隔声性能的影响,并探讨了其在汽车顶板上应用的可行性。研究表明,加入压电块的薄膜型声学超材料隔声性能明显提高;外接电路的电感和电阻仅在传声损失峰值所对应的频率处对材料的传声损失有影响,传声损失峰值随电阻或电感的增大而减小,峰值位置基本不随电阻或电感而改变;外接电路中电阻对传声损失峰值的影响明显弱于电感;复合了压电薄膜型声学超材料的汽车顶板相比于单一钢板压制的汽车顶板具有更好的隔声能力。     

高静电场下的薄膜测厚技术

针对实际生产中遇到的薄膜静电影响问题,采用一种比较巧妙的电路方法－线圈隔离法消除了静电的影响,该技术是一种实有的在线薄膜测试量技术,也可以运用到其他电容式传感器非接触式的在线测量中。     

一种检测乙醇浓度的气敏传感器的制作

在汽车电子行业，乙醇气敏传感器可用来检测司机的酒精含量，避免事故的发生。因为二氧化锡（SnO2）具有较高的灵敏度、且最高灵敏度对应的工作温度较低、电路简单、造价低廉、使用方便等特点。基于薄膜工艺开发了硅基二氧化锡薄膜为感应薄膜的乙醇气敏传感器，介绍了乙醇气敏传感器的工作原理，在比较两种薄膜结构的基础上，深入探讨硅基二氧化锡薄膜制作工艺，并对薄膜性能进行了定量分析，为乙醇气敏传感器制作提供了一种好的思路。     

使用薄膜湿敏元件的湿度控制器的设计

介绍了一种以Ｔａ２Ｏ５薄膜ＭＯＳ型湿敏元件为核心的湿度控制电路。该电路性能稳定,易于调节,应用广泛。     

基于ARM9的高精度动态测厚系统

针对高精度非接触式动态测厚方法的不足,提出了基于ARM9微处理器的硬件设计方案,对锂电池两表面的铝薄膜(或铜薄膜)的炭粉厚度进行了非接触式高精度的快速动态测量,系统采用1对CCD激光位移传感器,采用特殊的测量方法.控制系统以ARM9微处理器为主控核心,设计了相应的外围扩展电路,主要有LCD接口电路、电机控制电路、CCD激光位移传感器接口电路等,采用了操作系统μC/OS-II和嵌入式图形系统μC/GUI,并介绍了其在系统中的运行机制,基于C语言编写了相关软件.系统在实际生产中应用良好,与传统的方法比较,提高了生产效率,改善了生产状况.     

基于微系统IPD工艺的功分网络制造技术

集成无源器件(Integrated Passive Device,IPD)具有高集成度、高精度、高可靠性的优势,在射频微波领域极具应用前景,但薄膜多层电路及高精度电阻制作是限制其广泛应用的关键问题.文中基于IPD技术设计制作了毫米波Wilkinson带状线功率分配/合成器,通过薄膜多层技术实现了2层苯并环丁烯(BCB)...     

铌酸锶钡铁电薄膜的微结构与薄膜厚度的关系

叙述了使用溶胶—凝胶法在 Si( 0 0 1 )基片上制备不同厚度的铁电铌酸锶钡薄膜的过程 ,使用 X射线衍射 ,扫描电子显微镜 ,拉曼散射光谱等方法研究薄膜的微结构与薄膜厚度之间的关系 ,薄膜的厚度一直能够达到 5 μm。实验发现 ,随着厚度的增加 ,SBN60薄膜在 ( 0 0 1 )方向的优先取向性越来越好。在逐层生长的过程中 ,处于底层的膜层能够起到缓冲层的作用 ,以逐渐改善薄膜与基片之间的晶格失配 ,从而使得晶体的结晶取向性越来越好     

Electrostatic force microscopy study on the domain switching properties of the Pb(Zr0.2Ti0.8)O3 thin films with different crystallographic orientations for the probe-based data storage

The domain switching properties of the ferroelectric Pb(Zr(0.2)Ti(0.8))O(3) (PZT) thin films with two types of crystallographic orientations were investigated by electrostatic force microscopy (EFM). The crystallographic orientations of the PZT thin films were random on the (111)Pt/MgO(100) and c-axis preferred on the (100)Pt/MgO(100), respectively. When dc bias was applied to the films for writing in micro-scale area, electrostatic force images showed that the domain switching was hard in the PZT thin films with random orientation, while the pattern could clearly be written in the PZT films with c-axis orientation. The differences in the domain switching properties of each PZT thin film were investigated in the crystallographic orientations point of view, and the domain switching dynamics were also measured by investigating the nano-sized dot switching behavior with respect to the width of the applied voltage pulse.     

New microelectromechanical cavities for gigahertz frequencies

A possibility of creating micrometer-sized microelectromechanical cavities operating at gigahertz frequencies is considered. A thin film of a dielectric (ferroelectric) with a high dielectric permeability and electric strength is included into the cavity structure. Specific features of device operation and its structure are described by a mathematical model that allows one to find exact relations between the parameters characterizing natural oscillations of the moving element and the triggering voltage.     

铁电材料测试系统用电压自动衰减电路

针对铁电材料测试系统中不同测试信号电压的差别，设计了电压自动衰减电路。重点介绍了自动量程转换电路、峰值AC／DC转换电路、继电器驱动电路和衰减电路的设计。利用配有电压自动衰减电路的铁电材料测试系统测量了PZT铁电体材料样品的电滞回线。测量结果表明，该设计解决了测试电压与采集卡量程的匹配问题，实现了铁电材料测试的自动化。     

A Two-Chamber Facility for Depositing Thin Films in a Transverse High-Frequency Discharge

A facility for depositing thin films in a transverse high-frequency discharge is described. The facility consists of two (basic and auxiliary) chambers. The basic chamber is intended for sputtering targets and depositing a thin film on the prepared substrate. The auxiliary chamber contains a system of replaceable electrodes and serves for the preliminary processing of a substrate and the subsequent action on the thin film obtained. The device was tested in an oxygen discharge at pressures of 1.0 to 15 hPa and a deposited specific high-frequency power of up to 6.5 W/cm³ at a frequency of 10 MHz with targets of Pb(Zr _x Ti _{x– 1})O₃ ferroelectric ceramics and showed satisfactory results.     

溶胶-凝胶法制备铁电薄膜的研究进展

溶胶-凝胶法是制备铁电薄膜的一种重要方法。综述了溶胶-凝胶法制备铁电薄膜的原理、工艺过程、特点,以及采用此方法制备出的某些材料的铁电性能。最后指出,溶胶-凝胶法制备铁电薄膜工艺仍需优化和改进,薄膜的质量亟待提高,以适应器件的要求。     

An automated setup for studying thin ferroelectric films by the thermal-noise method

Determination of the initial permittivity (the permittivity in a weak electric field—a field that is much lower than the coercive field) of thin ferroelectric films is the most important problem in studying such objects. For this purpose, the thermal-noise method is a convenient tool. In this case, in contrast to the bridge method, a measuring voltage that can create a significant field in a sample is not applied to it, but a thermalnoise voltage that depends on the film capacitance is measured across a load resistor, which is connected in parallel to the specimen. Below, an automated setup using the LabVIEW package is described. The technique was first applied to studying thin films. A significant difference between the results of measuring the permittivity of thin films by the bridge and thermal-noise methods has been revealed.     

FABRICATION OF PIEZOELECTRIC BIMORPH USING LEAD ZIRCONATE TITANATE THIN FILM DEPOSITED BY HYDROTHERMAL METHOD

In order to describe the characteristics of piezoelectric bimorph, properties of lead zirconate titanate (LZT) film are studied by X-ray diffraction (XRD) and scanning eletron microscope (SEM). The ratio of PbTiO3/PbZrO3 in LZT is 53/47, which is around morphotropic phase boundary (MPB). LZT film is composed of cubic particles with the average size of 5 μm. Density of thin film is figured out through the datum measured in experiments. The displacement model used to analyze the driving ability of bimorph is set up, and the effect of elastic intermediate layer is taken into account. Piezoelectric coefficient of LZT film is worked out by using the displacement model. Experiments of driving ability show that deformation of bimorph free end does not increase with times of crystal growth processes and the maximum deformation is obtained after two times crystal growth processes. Finally, the ferroelectric property of the bimorph is investigated and coercive voltage of the bimorph is obtained.     

脉冲激光溅射沉积技术的发展及其应用研究

薄膜材料已经在半导体材料、超导材料、生物材料等方面得到广泛应用.为了得到高质量的薄膜材料,脉冲激光溅射沉积(PLD)技术受到了广泛的关注.文中介绍了脉冲激光溅射沉积薄膜的基本原理及特点,分析了脉冲激光溅射沉积技术在制备高温超导膜、铁电薄膜、生物陶瓷薄膜等功能薄膜方面的应用研究.大量研究表明,脉冲激光溅射沉积是目前最好的...