共查询到19条相似文献,搜索用时 31 毫秒
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对3款同种型号不同公司生产的双极电压比较器进行了高、低剂量率及变温辐照的60Co γ辐照实验。结果表明:偏置电流和电源电流为双极电压比较器辐射敏感参数,失调电压仅在工作偏置条件下为辐射敏感参数;由于工艺不同,不同公司的双极电压比较器存在辐射响应差异,而同一公司的双极电压比较器在不同偏置条件下的辐照损伤趋势亦不同;变温辐照加速评估方法不仅可鉴别上述不同公司的双极电压比较器在不同偏置条件下的剂量率效应,而且能很好地模拟和保守地评估其低剂量率下的辐照损伤。 相似文献
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本文对几种不同型号的JFET输入双极运算放大器在不同剂量率(1、0.1、0.01及10-4、6.4×10-5Gy(Si)/s)辐照下的响应规律及随时间变化的退火特性进行了研究。结果显示,由于制作工艺相异,不同型号JFET输入双极运放对不同的剂量率辐照也表现出响应差异,但总的来说可分为三大类:第一类明显具有低剂量率辐照损伤增强效应,但同时又有时间效应的关系;第二类虽有不同剂量率的辐照损伤的差异,但这种差异可通过相同时间的室温退火来消除;第三类无剂量率效应,但有明显的“后损伤”现象。文中对引起电路辐照损伤差异的机理进行了探讨。 相似文献
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研究了10位双极模数转换器(ADC)在60Coγ射线不同剂量率、不同偏置条件辐照下的电离辐射效应及退火特性。研究结果发现,此类模数混合信号电路在不同偏置和不同剂量率辐照下的电离辐照响应有较大差异。同一电参数既表现出低剂量率损伤增强效应(ELDRS)又表现出时间相关效应(TDE)。研究结果进一步表明,低剂量率辐照0 V偏置是最劣偏置;与之相反,高剂量率辐照5 V偏置是最劣偏置,而加电阻偏置对辐照损伤有一定的抑制作用。最后,结合空间电荷模型和边缘电场效应对其辐照损伤差异及退火机理进行了初步探讨。 相似文献
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通过室温和高温条件下的辐照试验,研究了100 nm和400 nm栅氧厚度PMOS剂量计(RADFETs)在高温下的辐照响应。实验剂量率为3 rad(Si)/s和0098 rad(Si)/s,辐照总剂量达80 krad(Si)。采用中带电压法进行氧化物陷阱电荷和界面态陷阱电荷的分离,对高温下辐照响应的微观机理进行了分析。氧化物陷阱电荷的退火作用是导致非线性响应的主要原因。不同氧化层厚度的氧化物陷阱电荷密度差异很大,高温下100 nm和400 nm RADFETs的界面态陷阱电荷密度差异较小。最后讨论了高温下不同栅氧厚度RADFETs的适用性,为高温环境下RADFETs的应用提供了参考。 相似文献
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剂量率对γ射线制备农用吸水树脂性能的影响 总被引:1,自引:0,他引:1
本研究主要确定吸收剂量率对两类吸水树脂性能(吸水性能、接枝率)的影响,为工业上大量辐照吸水树脂的辐照工艺提供理论依据。使用60 Coγ辐射引发农用吸水树脂接枝交联。实验结果表明:总剂量为4~10kGy的情况下,剂量率较低时(0.8~1.2kGy/h)合成类的吸水树脂聚合不完全,不能形成最终的达标产品;淀粉类吸水树脂在设定的剂量率范围内,可完成反应。剂量率对合成类和淀粉类吸水树脂的吸水倍数、凝胶强度都有一定影响。在此剂量率范围的试验样品接枝率都在95%以上;由于实验使用的交联剂较少,因此剂量率对交联度的影响不大。合成类树脂的保墒效果较好,试验15d后土壤含水量最高为17%,延长灌溉周期15~20d;两类吸水树脂的催芽效果显著,均在93%以上。 相似文献
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《Journal of Nuclear Science and Technology》2013,50(10):992-995
A PMOS transistor that is commercially available device can function as a practical radiation dosimeter for high dose. A new dosimetric parameter, that is shift rate of drain current, is proposed and demonstrated to reduce the possible errors of measurement. The calibration curve of dosimetric parameter vs. radiation dose shows a very linear characteristic. Some modifications were suggested to compensate the room temperature effects. The gate bias can be applied to further increase the dosimetric sensitivity and extend the dose of radiation measurement to a lower range. 相似文献
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PMOS总剂量监测技术的卫星应用 总被引:2,自引:1,他引:1
利用PMOS剂量计技术,研制出国产PMOS剂量仪,随“实践五号”科学实验卫星升空,入轨后对卫星内部进行了电离辐射总剂量监测。取得了卫星内部的总剂量深度分布结果。介绍了PMOS剂量仪的原理技术和飞行结果。与国外同类监测设备在轨结果进行对比,介绍并讨论了该技术的研究发展方向和我国的空间应用展望。 相似文献
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A. Buttafava A. Tavares A. Zaopo D. Dondi A. Faucitano 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2007,265(1):221-226
The yields and spatial distribution of the products arising from the in source oxidation of 50 μm LDPE films induced by 60-Co gamma radiations and by 300 kev electrons have been investigated as a function of the dose rate. The dose rate was found to have a strong influence on the reaction, the hydroperoxides and carbonyls yields at the lowest gamma dose rate of 0.04 kGy/h being decreased by a factor of about three with increasing the gamma dose rate up to 0.69 kGy/h and by a factor of about 30 when operating at the e-beam dose rate of 1.5 kGy/s. The carbonyls depth concentration profiles, the EPR measurements on radicals intermediates and the experiments of post-irradiation oxidation are consistent with the conclusion that, as far as the gamma irradiation is concerned, the observed dose rate effects cannot be imputed to oxygen diffusion control and/or to the chain branching via hydroperoxides decomposition coupled to the longer times between the initiation events. The hypothesis of the dose rate acting on the kinetic chain length of the radioxidation which in turn implies a substantially uniform distribution of radicals in the amorphous phase attained through spur expansion is proposed. 相似文献
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Blistering of niobium under bombardment with 5 to 15 keV He ions has been investigated. At these energies there is only one generation of blisters, which are sputtered and give way to a microrelief. A high dose rate of 3–5 mA/cm2 has been used to find the energy and temperature dependance of the blistering cut-off effect. At 20° C this cut-off dose increases from about 1 to 3 C/cm2 when the energy is increased from 5 to 15 keV. The temperature effect has been investigated with 10 keV ions. The cut-off dose decreased to about 0.2 C/cm2 at 700° C. Since in a fusion device, the dose rate may be much smaller than the one used above, the dose rate effect has been investigated. With a dose rate reduced to 0.05 mA/cm2 the critical dose for blistering and the cut-off dose have not been found to vary by any large amount. 相似文献
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V. M. Mordashev 《Atomic Energy》1967,22(2):143-143
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《IEEE transactions on nuclear science》1970,17(6):96-99
The problem of radiation hardening of metal-oxidesemiconductor (MOS) systems is discussed from a circuit viewpoint. An inverter chain is studied, and its performance in radiation is related to device quality. Techniques for testing and hardening circuits are given. 相似文献
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CMOS电路X射线辐射剂量增强效应 总被引:2,自引:0,他引:2
研究了CMOS电路在X射线辐射环境下性能的退化及剂量增强效应,测量了相对剂量增强系数,对不同工艺CMOS电路的剂量增强系数进行了比较,并对高原子序数材料的X射线剂量增强机理进行了讨论。 相似文献