铁电光伏效应的理论机制及其研究进展

近期,铁电体的反常光伏效应在太阳能光伏领域引起了广泛关注。基于体光伏效应的铁电光伏器件的内部机制与基于p-n结的传统光伏器件不同。体光伏效应是指在缺乏反演对称性的材料中产生稳定的光电流和超过带隙的光电压。尽管体光伏效应具备巨大应用潜力,但其内部机制尚不明确。回顾了铁电体中铁电光伏效应的理论发展历程和最新进展,重点讨论了体光伏效应的内部机制和理论模型。揭示了对体光伏效应现象与弹道电流、位移电流机制的理论理解及其实验研究。最后,讨论了体光伏效应在未来应用中所面临的机遇和挑战。     

光伏并网对配网电压影响的PSCAD仿真与分析

讨论了光伏电池的基本工作原理和主要电气参数,PSCAD仿真软件中无光伏阵列仿真元件,根据光伏阵列的数学模型,利用PSCAD自行搭建了自定义的光伏阵列控制元件,来模拟实际的光伏阵列控制装置.基于PSCAD仿真平台搭建了光伏并网模型,通过仿真模型分析了光伏并网对配网电压的影响.     

国内外光伏发电并网逆变器标准综述

光伏并网逆变器是光伏并网发电的关键部件,其标准关系到光伏并网发电的性能.概述了我国和国际上的主流光伏并网标准,并从标准的制定情况方面综述了国内外光伏发电并网逆变器标准.     

屋顶分布式光伏发电面临的挑战及应对措施

本文介绍了分布式光伏发电概念,分析了我国分布式光伏发电现状,揭示了我国光伏发电产业结构失衡的根源,最后分析了发展分布式光伏的必要性及优势.     

高压直流系统与光伏混合供电的综合应用研究

本文首先介绍了中国移动通信机房楼及数据中心光伏资源应用情况,并针对目前光伏资源在通信机房及数据中心的应用方案进行了对比与分析,得出了一种新型的能够高效利用通信机房光伏资源的高压直流系统与光伏混合供电的方案,通过对目前通信机房楼及数据中心光伏资源的统计与分析,得出了光伏资源在中国移动大型数据中心有很大的应用价值的结论。另外通过对比目前几种不同的光伏并网及混合供电方案,得出了高压直流系统与光伏混合供电的最优方案。     

“双碳”目标下光伏产业发展的新机遇与光伏在能源网络中的运用浅析

文章针对光伏产业发展问题进行探究,从发展光伏产业的重大意义出发,分析了“双碳”目标下光伏产业发展新机遇,阐述了光伏产业在能源网络中的运用,并对光伏产业的未来发展提出对策建议。希望为我国光伏产业的发展提供新思路,助力“双碳”目标尽早实现。     

中国光伏产业发展

基于国际光伏产业不断发展的背景下,介绍了中国光伏产业近几年迅猛发展的概况,并深入分析总结了中国光伏产业得以快速发展的基本原因及内在动力。同时,也指出了中国光伏产业发展过程中出现的一些问题,如Si材料严重短缺、生产技术相对落后等,并揭示了出现这些问题的原因,且指出了随着中国光伏科技水平不断提高,这些问题将逐步得到解决,中国光伏产业必将走上健康快速发展的道路。接着介绍了中国光伏市场的发展概况,给出了中国国内光伏市场狭小及发展缓慢的原因,并指出了今后中国光伏市场的发展方向。随着中国政府对太阳能产业的投资及扶植力度的不断加大及光伏发电价格的不断降低,在不久的将来,中国的光伏市场必然会快速健康发展。     

两级式光伏并网发电控制系统仿真分析

阐述了两级式光伏并网发电控制系统的结构及其控制过程,建立了光伏阵列模型和光伏并网发电系统模型,利用光伏阵列模型模拟了光照条件变化时光伏并网系统的输出情况进行仿真分析。实验表明,此两级式光伏并网发电系统能迅速有效地跟踪到光伏阵列的最大功率点,而且能够控制并网电流的波形,使逆变器的输出电流与电网电压同频同相,保证电流输出波形为正弦波。     

基于Matlab/Simulink的光伏电池建模与仿真

为了研究光伏发电系统,该文根据光伏电池的数学模型,利用Matlab软件在Matlab/Simulink下搭建了一种光伏电池仿真模型.通过对搭建模型运行仿真得出了光伏电池的特性曲线,并且经过改变外界参数对不同环境下的光伏电池的输出特性曲线进行了比较,得出了相应结论:不同环境下光伏电池的输出特性是不同的,且按照一定的规律变化,但每一种环境下光伏电池都有唯一的最大功率输出点.这对光伏并网系统的研究具有重要意义.     

能源杂论——光伏2.0你准备好了吗?

正至今为止光伏行业可以称为光伏1.0。在光伏1.0时代后期,我国用十年不到的时间走完发达国家20年历程、为光伏利用争取到广泛的社会认同、将光伏发电的成本降至1元/瓦以下、并奠定了中国作为光伏大国的地位。光伏2.0的标志是可移动光伏发电。可移动光伏发电是指在农地里铺设田轨系统,包括基础桩、混凝土轨道和旁站电力线,还包括旁站通讯宽带和输水管。让光伏电池板来回在轨道上移动     

迭加原理的错误及纠正（二）

本文纠正了“失加原理”的错误，建立了新的光伏理论。     

Vacuum Sensitivity of PhotovoItage of AlGaAS/GaAs MuItiple Quantum Wells

Abstract: The photovoltage spectra of AlGaAs/GaAs multiple quantum wells at different vacuum have been measured and the vacuum sensitivity of photovoltage is re-ported. The experimental results show that the photovoltage decreases in a step - like manner at 105 Pa and increases in a sept - like manner at 0.1 Pa. It is believed that the variation of photovoltage with vacuum is due to the action of oxygen atoms adsorbing at the surface of AlGaAs/GaAs multiple quantum wells structure.     

PN结光生伏特效应的理论研究

根据等效电流源原理,分析了经典光伏理论产生错误的原因,从理论上奠定了修正经典光伏理论的基础。     

用脉冲激光研究细菌视紫红质的瞬态光吸收和光电压

用自行装配的染料脉冲激光器 ,在室温下研究了细菌视紫红质膜蛋白 (BR)对 5种不同光波的瞬态光吸收和3种光波的光电压的关系。实验发现 ,BR对同一种光波的光电压和光吸收并不完全相关 ,影响其光电转换的因素除了与BR所吸收的光能多少有关之外 ,还有其他复杂的原因。在 3种脉冲半宽为 110ns的染料激光中 ,6 17nm激光对BR产生光电压最为有利     

量值恒定的表面光电压法测量半导体少子扩散长度的研究

为了在保持材料完整性的基础上,对单晶硅材料的质量进行评价,设计了一种利用表面光电压测量半导体少子扩散长度的系统.系统采用斩波器、单色仪和锁相放大器来获取半导体表面光电压信息,利用表面光电压与材料的光吸收系数的关系得出半导体少子扩散长度,重点阐述了系统的测量原理及各个模块的设计与实现方法.检测结果表明,量值恒定的表面光电压法用于测量半导体少子扩散长度能达到预期的效果.     

Long-range effect of the irradiation of silicon with light on the Schottky-barrier photovoltage

It is established that the Schottky-barrier photovoltage decreases as a result of the irradiation of a silicon sample with a barrier by light (incident on the base side). The value of the photovoltage is restored approximately 0.5 h after irradiation. The changes in the photovoltage after irradiation are compared to the behavior of the silicon microhardness and interpreted on the basis of the concept of point defect generation in the long-range effect.     

Charge limit effects in emission from GaAs photocathodes at high optical excitation intensities

The stationary characteristics of a photocathode and the characteristic times of transient processes accompanying instantaneous switching of the illumination on and off under the conditions of high excitation intensity are examined in a nonlinear diffusion model, with allowance for the photovoltage dependence of the parameters of the skin layer. Analytical expressions for the quantum yield as a function of the photovoltage and radiation intensity are obtained for the stationary case. The critical value of the illumination intensity corresponding to a transition into the emission charge limit regime is found. It is shown that the time of emergence into a stationary state depends on the magnitude of the photovoltage established on the barrier and is determined mainly by the equilibration time between the electron and hole fluxes on surface recombination centers. At high illumination intensities the equilibration time is inversely proportional to the illumination intensity. At intensities corresponding to complete blocking of the cathode, this results in an emission charge limit. The photovoltage relaxation time can reach microseconds. The photovoltage dependence of the tunneling transmittance of the activation layer can be reconstructed by comparing with experiment the computational results obtained for the quantum yield as a function of the photovoltage. Fiz. Tekh. Poluprovodn. 32, 1125–1134 (September 1998)     

Open-circuit voltage of an illuminated nonideal heterojunction

The possibility of using the model of tunneling-recombination transport for calculating the photovoltage of an illuminated nonideal heterojunction is demonstrated. The technique of photoexcitation with light of varying spectral composition is used, and the difference in the behavior of the dependence of the photovoltage on the illumination is explained. The heterojunction photovoltage is calculated taking into account the predominance of the tunneling-recombination transport mechanism in the barrier region and modification of the shape of the potential barrier during illumination. It is shown that the dependences calculated at various illumination levels agree with those obtained experimentally.     

The roles of traps in the energy loss for aged organic solar cells: A transient photovoltage study

By investigating the turn-on and turn-off photovoltage dynamics as a function of aging time, we reported the roles of traps on the energy loss in organic solar cells composing of copper phthalocyanine (CuPc)/fullerene (C60). Illuminating the device with square pulses of light, a peak of transient photovoltage after turn-on was observed after device degradation. After turn-off, the transient photovoltage first goes to the negative before settling back to zero, which is the result of electron trapping in the C60 layer before being neutralized by re-injected holes. Furthermore, by adding a tris (8-hydroxyquinolinato) aluminum buffer to prevent the traps from propagating into C60 layer, the peak after turn-on is greatly suppressed and the negative peak after turn-off vanishes, supporting the trapped electrons in the C60 layer play the critical role in the appearance of peak of the transient photovoltage.     

The influence of heat treatment and ambient atmosphere on the In-CdS junction photovoltage

Measurements of the conductivity, photoconductivity and photovoltage have been made on photoconducting cadmium sulphide crystals with evaporated indium contacts. Changes in the electrical properties of this system due to mild heat treatment are ascribed to changes in the contact resistance and the accompanied change in the effective value of the surface recombination velocity at the metal-photoconductor interface. A model is presented to account for the observed reversal in the sign of the photovoltage following heat treatment and to explain the sensitivity of the photovoltage to the ambient atmosphere.