450t/h CFB锅炉系统布置和技术特点

火力发电厂大型循环流化床锅炉为新型洁净燃烧动力设备.从煤的流化燃烧脱硫技术原理出发,介绍我国自行设计、制造的首台450t/h CFB锅炉性能参数、整体布局和系统布置.对CFB锅炉主要技术特点作基本分析和探讨.     

国内首台670 t/h水煤浆锅炉的燃烧调试与运行

水煤浆作为一种新型清洁燃料,对于降低电站锅炉硫氧化物和氮氧化物的排放具有一定的积极意义。为此,对南方某电厂新建670 t/h水煤浆和重油两用锅炉的设备、系统特点和燃烧调试过程进行了介绍,并分析了有关运行参数,指出了需解决的问题。分析结果表明,670 t/h水煤浆锅炉具备了投入正常生产的条件。     

25t/h双循环流化床锅炉的设计与调试

该文介绍一种新型 2 5t/h双循环流化床燃烧锅炉的设计与调试。运行结果表明 :这种循环流化床锅炉不仅操作稳定、性能可靠 ,而且通过两级分离 ,较好地克服了目前常规流化床中的磨损问题。因此 ,这种炉型既可以用于新建循环流化床锅炉 ,又可以用来改造具有双锅筒的链条锅炉。图 4参 2     

SG1025 t/h锅炉煤种适应性的试验分析

简要介绍了襄樊电厂SG1025t/h锅炉对煤种适应性的试验情况,分析了该锅炉在燃烧贫煤、混煤、烟煤时的安全性和经济性,提出了指导锅炉运行的结论与建议.     

气化小油枪燃烧器在1 025 t/h烟煤锅炉中的应用

为了节约燃煤锅炉启动、停止以及低负荷稳燃用油,降低发电成本,华电国际十里泉发电厂对1025t/h锅炉燃烧器进行了技术改造,将原有的A层4只燃烧器更换为新型的气化小油枪燃烧器。气化小油枪燃烧器将油枪和燃烧器合二为一,综合运用了小油量气化燃烧技术、煤粉多级燃烧技术和防结焦抗烧损技术。对该技术实施的技术措施与应用效果作了详细阐述。应用结果表明,作为一项新型节油技术,气化小油枪燃烧器具有显著的经济效益和环保效益,值得在烟煤锅炉中推广。     

DZL2.8-0.7/95/70-AⅡ型锅炉的炉拱改造

该文针对DZL2 .8 0 .7/95 /70 AⅡ型锅炉的炉膛燃烧不佳现状 ,介绍了炉拱改造的情况 ,从而使改造后的锅炉燃烧稳定 ,煤耗降低。图 2     

450t／h CFB锅炉系统布置和技术特点

火力发电厂大型循环流化床锅炉为新型洁净燃烧动力设备。从煤的流化燃烧脱硫技术原理出发，介绍我国自行设计，制造的首台450t/h CFB锅炉性能参数，整体布局和系统布置。对CFB锅炉主要技术特点作基本分析和探讨。     

硫和氯及其化合物对垃圾焚烧炉的高温腐蚀与对策

介绍了焚烧垃圾锅炉的烟气成分特性，分析了硫及硫化物、氯及氯化物、还原性气氛等因素对金属壁面高温腐蚀的影响，认为宜通过炉内加添加剂、采用渗铝钢管、调整燃烧工况避免还原性气氛形成等经济有效的方法来缓解焚烧垃圾锅炉过热器的高温腐蚀。     

35MW富氧燃烧煤粉锅炉开发与研究

介绍了富氧燃烧技术的特点、富氧燃烧技术的意义和必要性。对东方锅炉35 MW富氧燃烧煤粉锅炉的设计方案进行了简要介绍,阐述了富氧燃烧锅炉设计中应注意的问题。     

烟煤锅炉改烧无烟煤/贫煤的研究分析

介绍了烟煤锅炉改烧无烟煤的成熟燃烧技术。重点分析了稳燃腔燃烧器、水平浓淡燃烧器和双通道燃烧器的不同燃烧原理、燃烧器的结构和典型工程案例,对今后电厂进行烟煤锅炉改烧无烟煤 /贫煤的改造提供技术参考。     

Substituting cogeneration combined-cycle plants for the LMZ-made type PT-60/75-12.8/1.3 and PT-80/100-12.8/1.3 turbines

The advisability of replacing the first phases of Moscow’s large cogeneration stations equipped with type PT-60/75-12.8/12.3 and PT-80/100-12.8/1.3 turbines by the Leningrad Metal Works-made heat-recovery combined-cycle plants using 65- to 75-MW gas turbines is substantiated.     

DL/T 812-2002《标称电压高于1000V架空线路用绝缘子串工频电弧试验方法》的编制

根据国家经贸委司(局)电力[2000]22号文“关于确认1999年度电力行业标准制、修订计划项目的通知”安排，国家电网公司武汉高压研究所负责组织起草电力行业标准“标称电压高于1000V架空线路用绝缘子串工频电弧试验方法”。本标准于2002年颁布实施，编号为DL／812-2002。     

DL/T 729-2000《户内绝缘子运行条件电气部分》标准的编制说明

1前言 根据电力工业部综科教[1998]28号文"关于下达1997年制定、修订电力行业标准计划项目的通知"安排,由国家电力公司武汉高压研究所负责起草并组织编写组承担了制定"户内绝缘子运行条件电气部分"电力行业标准的任务,已于2000年报批,标准编号为DL/T 729-2000.     

DL/T 812-2002<标称电压高于1000V架空线路用绝缘子串工频电弧试验方法>标准的编制说明

1　前言根据国家经贸委电力司电力 [2 0 0 0 ]2 2号文“关于确认 1 999年度电力行业标准制、修订计划项目的通知”安排 ,由国家电力公司武汉高压研究所负责起草并组织编写组承担了制定“标称电压高于1 0 0 0Ｖ架空线路用绝缘子串工频电弧试验方法”电力行业标准的任务 ,已于 2 0 0 2年报批 ,标准编号为ＤＬ/Ｔ 81 2 - 2 0 0 2。2　编制本电力行业标准原则和确定本标准主要内容　　国内现尚无专门可供参考执行的标准。制订本标准的原则是等效采用ＩＥＣ 61 467:1 997中的内容 ,并尽可能做到与国内现行标准有关内容一致。由于国内尚无试验室能…     

High-power/high-brightness diode-pumped 1.9-/spl mu/m thulium and resonantly pumped 2.1-/spl mu/m holmium lasers

We report high power (>36 W) with beam propagation factor M/sup 2//spl sim/2 in a diode end-pumped Tm:LiYF/sub 4/ (Tm:YLF) laser generating output near the 1.91-/spl mu/m region. Using the 1.91-/spl mu/m emission and high brightness achieved with the Tm:YLF laser we resonantly end-pump the Holmium /sup 5/I/sub 7/ manifold in Ho:YAG and demonstrate /spl sim/19 W of continuous-wave (CW) output. The diode-to-Holmium optical to-optical conversion efficiency achieved is /spl sim/18%. Using a CW pumped and repetitively Q-switched configuration, the Tm:YLF pumped Ho:YAG laser achieves >16 W of output power with an M/sup 2//spl sim/1.48 at 15 kHz. A Q-switched frequency range of 9 to >50 kHz is also achieved.     

ELH1-126/T2500-40型气体绝缘金属封闭开关设备

天水长城开关厂研制的ELH1-126/T2500-40型气体绝缘金属封闭开关设备(GIS)采用SF6气体作为绝缘和灭弧介质,由断路器、隔离开关、接地开关、套管或电缆终端等电器元件相互直接连接构成.公司在研制过程中吸收并应用了国际先进的技术和成熟的运行经验,因此产品具有体积小、配置灵活、易于安装、不受外界环境影响、维护简单、不检修周期长等特点.……     

1.3-/spl mu/m-range GaInNAsSb-GaAs VCSELs

1.3-/spl mu/m-range GaInNAsSb vertical-cavity surface-emitting lasers (VCSELs) with the doped mirror were investigated. GaInNASb active layers that include a small amount of Sb can be easily grown in a two-dimensional manner as compared with GaInNAs due to the suppression of the formation of three-dimensional growth in MBE growth. The authors obtained the lowest J/sub th/ per well (150 A/cm/sup 2//well) for the edge-emission type lasers due to the high quality of GaInNAsSb quantum wells. Using this material for the active media, the authors accomplished the first continuous wave operation of 1.3-/spl mu/m-range GaInNAsSb VCSELs. For the reduction of the threshold voltage and the differential resistance, they used the doped mirror grown by metal-organic chemical vapor deposition (MOCVD). By three-step growth, they obtained 1.3-/spl mu/m GaInNAs-based VCSELs with the low threshold current density (3.6 kA/cm/sup 2/), the low threshold voltage (1.2 V), and the low differential resistance (60 /spl Omega/) simultaneously for the first time. The back-to-back transmission was carried out up to 5 Gb/s. Further, the uniform operation of 10-ch VCSEL array was demonstrated. The maximum output power of 1 mW was obtained at 20/spl deg/C by changing the reflectivity of the front distributed Bragg reflector mirror. GaInNAsSb VCSELs were demonstrated to be very promising material for realizing the 1.3-/spl mu/m signal light sources, and the usage of the doped mirror grown by MOCVD is the best way for 1.3-/spl mu/m VCSELs.     

On the temperature sensitivity of 1.5-/spl mu/m GaInNAsSb lasers

We analyze the temperature sensitivity of 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs. Building on the method of Tansu and coworkers, we find evidence that the characteristic temperatures for the threshold current T/sub 0/ and external efficiency T/sub 1/ are balanced by a combination of monomolecular recombination and temperature destabilizing mechanism(s) near room temperature. At elevated temperatures, the destabilizing process(es) dominate, due to increased threshold current density J/sub th/. While it is difficult to definitively identify carrier leakage, Auger recombination, or a combination of the two as the responsible mechanism(s), results indicate that carrier leakage certainly plays a role. Evidence of intervalence band absorption was also found; T/sub 1/ was reduced, but J/sub th/ and T/sub 0/ were not significantly degraded. Conclusions are corroborated by supporting measurements of the Z-parameter with bias, spontaneous emission spectrum, and band-offsets. Spontaneous emission measurements show evidence of weak Fermi-level pinning within the active region at threshold, indicating a form of carrier leakage. This is consistent with the characteristic temperature analysis and a leakage mechanism is proposed. This process is partially responsible for the greater temperature sensitivity of device parameters and the poor internal efficiency. Methods for reducing the effects of each parasitic mechanism are also described.     

B&WB -450/10.3-M型锅炉制粉系统优化调整试验研究

针对某电厂2号锅炉设备特点,对制粉系统进行了测试,根据测试结果进行了优化调整.通过一系列的优化调整,使制粉系统出力得到提高,制粉电耗下降,提高了锅炉运行经济性,降低了发电成本,达到了节能降耗的目的.