Ho掺杂对Bi4-xHoxTi3O12陶瓷结构与铁电性能的影响

以Ho为掺杂元素,采用热压烧结方法制备Bi4-xHoxTi3O12陶瓷,重点研究了Ho掺杂量对其物相组成、致密度、微观结构和铁电性能的影响.首先以Bi2O3、TiO2和Ho2O3微粉为原料,利用固相反应在900℃合成出主晶相为Bi4Ti3O12的Bi4-xHoxTi3O12(x=0～0.8)粉体;然后,将合成粉体在850℃、30 MPa条件下热压烧结,当Ho掺杂量x=0～0.4得到了物相单一、整体致密(>99%)的Bi4-xHoxTi3O12陶瓷.随Ho掺杂量的增加,Bi4-xHoxTi3O12陶瓷的剩余极化强度呈现先增大后减小的趋势,主要与氧空位浓度和不同掺杂浓度引起的掺杂位置的不同有关.在Ho掺杂量x=0.4时,其剩余极化强度最大(2Pr=13.92μC/cm2),远大于未掺杂的Bi4Ti3O12陶瓷,说明适量Ho掺杂能有效改善其铁电性能.     

真空压力熔渗与热压烧结制备(SiCp+Al2O3f)/2024Al复合材料的组织与拉伸性能分析

分别采用真空压力熔渗法和粉末冶金热压烧结法制备了(40%SiC_p+Al_2O_(3f))/2024Al复合材料,所得材料的抗拉强度分别达到了364 MPa和310 MPa,致密度达到了98.78%和96.42%。通过对金相组织进行对比发现,热压法制备的复合材料中部分增强颗粒发生聚集。采用TEM对界面结合进行了对比,发现热压工艺制备的复合材料界面局部存在微孔洞,导致材料的致密性降低,真空压力熔渗制备的复合材料增强相和铝基体的界面结合较好,这也是熔渗法所得复合材料的性能优于热压法的主要原因。     

微波烧结BaZrxTi1-xO3陶瓷介电性能研究

采用微波烧结制备BaZrxTi1-xO3陶瓷并与常规烧结作对比,研究了微波烧结对材料晶体结构和介电性能的影响。结果表明,微波烧结在所需时间远远低于常规烧结的情况下,得到的样品在结晶度上明显优于常规烧结,微波烧结得到的陶瓷晶粒尺寸较常规烧结明显减小;介电温谱测试表明微波烧结所得陶瓷样品居里峰的峰强和峰宽都有所改变,此外,微波烧结得到的陶瓷弛豫现象也较常规烧结发生改变。     

Bi4Ti3O12铁电薄膜I-V特性的研究

采用溶胶-凝胶工艺(Sol-Gel)在Pt/Ti/SiO2/p-Si衬底上成功制备了低漏电流Bi4Ti3O12(BIT)铁电薄膜,对所得样品的漏导行为进行了研究.研究表明,Bi4Ti3O12薄膜的漏电流密度在+3V偏压下低于10-9A/cm2,满足器件应用的要求.在不同场强下薄膜的漏导机制不同,而且正向和负向电场作用下I-V曲线明显不同,正向漏电流明显小于负向漏电流.电压低于2V时,薄膜以欧姆导电机制为主,电压在2～5.4V(加正向电压)或2.2～3.6V(加负向电压)时,BIT薄膜应以Schottky emission导电机制为主;而对于较高的场强下,BIT薄膜以Space-charge limited currents(SCLC)导电机制为主.     

超细Al2O3颗粒增强铜基复合材料的研究

采用热压烧结法制备了超细Al₂O_3P/Cu 复合材料, 并进行了轧制, 对其组织与性能进行观察与分析。结果表明, 超细Al₂O_3P在基体中分布均匀, 细化了晶粒, 具有优于铜及铜合金的抗软化性能和耐磨性能。随着超细Al₂O_3P含量的提高, 密度、电导率降低, 硬度、强度升高, 轧制后的电导率与美国SCM 制品接近。      

Ag/Bi3.25La0.75Ti3O12/Bi4Ti3O12/Si结构铁电薄膜制备及其铁电性能的研究

利用溶胶-凝胶(sol-gel)方法,在硅基底上制备了Bi3.25La0.75Ti3O12/Bi4Ti3O12/Si铁电薄膜,其中Bi4Ti3O12作为缓冲层.用XRD方法分析了该结构铁电薄膜的物相结构;用扫描电镜对薄膜样品进行表面形貌观察;并且对该结构的铁电性能进行了研究.     

CaCu3Ti4O12/NiCuZn铁氧体基磁电复合材料研究

将CCTO(CaCu3Ti4O12)与NiCuZn铁氧体进行复合,系统地研究了组分变化对这种新型磁电复合材料的烧结性能、晶相结构、显微结构和磁电性能的影响。随后,为了实现复合材料的低温烧结以及综合考虑复相陶瓷的磁电性能,选取80%(质量分数,下同)NiCuZn铁氧体/20%CCTO组分,以BBSZ(Bi2O3-H3BO3-SiO2-ZnO)玻璃作为助熔剂,研究了CCTO/NiCuZn铁氧体基复合材料的烧结行为和磁电性能。结果表明,掺杂BBSZ后,900℃下烧结的所有样品的密度均达到了复相陶瓷理论密度的95%,且复相陶瓷的介电常数和磁导率在1～30 MHz范围内均不依赖于频率的变化。在10 MHz的频率下,当BBSZ的含量从0增加到3%时,复相陶瓷磁导率μ从13.2增加到47.9,磁损耗tanδμ从0.022下降到0.017,同时,样品的谐振频率从109Hz左右移动到3.2×108Hz。相应地,复相陶瓷的介电常数ε从9.2增加到16,介电损耗tanδε从0.069下降到0.012。这一优异的整体性能使其有望实际应用。     

ZBL低温助烧CaCu3Ti4O12高介电陶瓷的研究

采用固相合成CaCu_3Ti_4O_(12)(CCTO)微波介质陶瓷基体粉体,通过XRD衍射仪、SEM扫描电镜表征掺杂ZnO-B_2O_3-La_2O_3(ZBL)低软化点玻璃助烧剂的(CCTO)陶瓷的物相组成及结构特点,研究ZBL玻璃的掺杂量对CCTO样品烧结性能及微波介电性能的影响。研究表明:添加10%(质量分数)ZBL玻璃的CCTO陶瓷在960℃烧结3h,能够获得较好的介电性能:εr=112,tanδ=0.0027,τf=-2×10-6/℃。     

微波辅助熔盐法制备SrFe12O19及其磁性能的研究

以钢厂副产的氧化铁红作为含铁原料,采用微波辅助熔盐法制备了SrFe₁₂O₁₉铁氧体,研究了Fe/Sr摩尔比和微波煅烧温度对样品的物相组成、微观结构及磁性能的影响。采用FullProf软件对样品的XRD数据进行了精修拟合分析,利用扫描电子显微镜(SEM)观察了样品的形貌,用振动样品磁强计(VSM)对样品的磁性能进行了表征。结果表明,Fe/Sr摩尔比对样品的物相组成及样品的晶胞参数有重要影响,当Fe/Sr摩尔比为10.5时,样品获得了较好的磁性能。随着煅烧温度的增加,SrM相的厚度也随着增加,在1373.15 K下微波煅烧2 h, SrM相的厚度最大,此时样品矫顽力最大达到2.69×10⁵ A/m,饱和磁化强度为63.04 A·m²/kg,而在1273.15 K制备的样品最大磁能积最大为9.47×10³ J/m³。     

微波和真空烧结制备La2O3掺杂Al2O3透明陶瓷

通过共沉淀法制备La2O3掺杂Al_2O_3纳米粉,粉体经压制后分别采用微波和真空烧结制备Al_2O_3透明陶瓷。结果表明:Al_2O_3粉末颗粒大小均匀,近似球形,为40~60nm;两种烧结方式制备的试样XRD图中均为α-Al_2O_3,未检测到其它相。La2O3掺杂量为1%时,随烧结温度升高,两种烧结方法得到的Al_2O_3陶瓷的相对密度和抗弯强度均呈上升趋势,且微波烧结陶瓷的相对密度和抗弯强度明显高于真空烧结。1500℃烧结时,随La2O3掺杂量的增加,Al_2O_3陶瓷的相对密度均先增大后减小,当La2O3掺杂量为1%时,Al_2O_3陶瓷的相对密度和抗弯强度均最大。微波烧结陶瓷的透光率明显高于真空烧结,且其断口晶粒比真空烧结明显细少。     

Effect of dysprosium substitution on electrical properties of SrBi4Ti4O15

SrBi_4−xDy_xTi₄O₁₅ (with x = 0.02, 0.04, 0.06 and 0.08) powders have been synthesized using the stoichiometric amounts of nitrates and oxides of the constituent materials through sol–gel method. The compound so formed is characterized using X-ray diffraction. The density and lattice parameters are calculated. The impedance and electrical conductivity properties are investigated. The imaginary part of impedance as a function of frequency shows Debye like relaxation. Impedance data presented in the Nyquist plot which is used to identify an equivalent circuit and the fundamental circuit parameters are determined at different temperatures. The results of bulk a.c. conductivity as a function of frequency at different temperatures are presented. The dielectric behavior was investigated. Permittivity was calculated based on the relaxation frequency using an alternative approach based on the variation of the imaginary impedance component as a function of reciprocal angular frequency. The frequency dependence of real and imaginary permittivities was also investigated.     

Properties of tungsten-doped Bi4Ti3O12-SrBi4Ti4O15 intergrowth ferroelectrics

Ferroelectric and dielectric properties of tungsten-doped Bi₄Ti₃O₁₂-SrBi₄Ti₄O₁₅ ceramics were investigated. A pure phase of all the samples is confirmed by X-ray diffraction patterns. The remanent polarization (2P_r) of the samples increases initially and reaches its maximum value of 43.2 μC/cm² when W content is 0.03, which is over twice as large as that of non-doped one, then decreases with further doping. The coercive field (E_c) shows a weak tungsten content dependency. It is considered that the enlarged 2P_r could be mainly attributed to the restraint of oxygen vacancies as well as the weakening of their mobility. The Curie temperature decreases a little with increasing doping content, which indicates the good thermal stability is not deteriorated by tungsten doping.     

Red emission in Pr doped CaBi4Ti4O15 ferroelectric ceramics

In this paper, Pr doped CaBi₄Ti₄O₁₅ ceramics were prepared by a traditional solid state method. Crystal structure and morphologies of the ceramics were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The photoluminescence properties of the samples were investigated by a spectrofluorometer. Three excitation bands are located at wide range of wavelength, which are 300-430 nm, 440-510 nm and 550-570 nm respectively. Upon the excitation of 494 nm light, the samples shows an emission peak centered at 614 nm, corresponding to ¹D₂ → ³H₄ transition. A 614 nm red emission excited under the wave with long wavelength of Pr doped CaBi₄Ti₄O₁₅ makes it useful in the white LEDs. In addition, it is an intrinsic ferroelectric and piezoelectric material; the enhanced ferroelectric properties were obtained by Pr doping. As a multifunctional materials, Pr doped CaBi₄Ti₄O₁₅ may be useful in white LEDs, sensor, and optical-electro integration.     

Microwave dielectric properties of Mg1.8Ti1.1O4 ceramics

Low-loss Mg_1.8Ti_1.1O₄ ceramics were prepared by the conventional solid-state route and their microwave dielectric properties were investigated for the first time. The forming of tetragonal-structured Mg_1.8Ti_1.1O₄ main phase associated with a second phase MgTiO₃ were confirmed by the X-ray diffraction patterns. However, the presence of the second phase would cause no significant variance in the dielectric properties of the specimen because the second phase properties are very similar to that of the main phase. A fine combination of microwave dielectric properties (?_r ∼ 15.74, Q × f ∼ 141,000 GHz at 10.57 GHz, τ_f ∼ − 52.4 ppm/°C) was achieved for Mg_1.8Ti_1.1O₄ ceramics sintered at 1450 °C for 4 h.     

Influence of different synthesizing steps on the multiferroic properties of Bi5Fe1Ti3O15 and Bi5Fe0.5Co0.5Ti3O15 ceramics

The compounds Bi₅FeTi₃O₁₅ (BFTO) and Bi₅Fe_0.5Co_0.5Ti₃O₁₅ (BFCT) were prepared by incorporating BiFeO₃ (BFO) and BiFe_0.5Co_0.5O₃ (BFCO) into the host Bi₄Ti₃O₁₂ (abbreviated as BFTO-1 and BFCT-1) and by the conventional solid-state reaction method (abbreviated as BFTO-2 and BFCT-2). X-ray analysis indicates a four-layer Aurivillius phases with an orthorhombic symmetry. At room temperature, the remnant polarization (2P _r) of BFTO-1, BFTO-2, BFCT-1, and BFCT-2 samples are measured to be 11.0, 3.5, 13, and 6.3 μC/cm², respectively, and the corresponding remnant magnetization (2M _r) are about 2.72 × 10⁻³ memu/g, 1.51 × 10⁻³ memu/g, 7.6 and 2.1 memu/g, respectively. Both BFTO-1 and BFCT-1 samples exhibit the dielectric peaks at around 755 and 772 °C in their ε–T curves, respectively.     

Microwave dielectric properties of Mg4Al2Ti9O25 ceramics

Phase-singular Mg₄Al₂Ti₉O₂₅ ceramics with the pseudobrookite structure suitable for microwave devices such as antenna substrate have been prepared by gel-carbonate method with the dielectric permittivity of 24.7 (at 2-8 GHz), Q-values > 30,000 and temperature coefficients in permittivity (TCK) of less than + 17 ppm K^− 1. The dielectric characteristics are accountable in terms of ordering in the cation sub-lattice.     

Ferroelectric, dielectric and piezoelectric properties of potassium lanthanum bismuth titanate K0.5La0.5Bi4Ti4O15 ceramics

The Aurivillius type bismuth layer-structured compound potassium lanthanum bismuth titanate (K_0.5La_0.5Bi₄Ti₄O₁₅) is synthesized using conventional solid-state processing. The phase analysis is performed by X-ray diffraction (XRD) and the microstructural morphology is conducted by scanning electron microscopy (SEM). The ferroelectric, dielectric and piezoelectric properties of K_0.5La_0.5Bi₄Ti₄O₁₅ (KLBT) ceramics are investigated in detail. The remnant polarization (P_r) and coercive field (E_c) are found to be 8.6 μC cm⁻² and 60 kV cm⁻¹, respectively. The Curie temperature T_c and piezoelectric coefficient d₃₃ are 413 °C and 18 pC N⁻¹, respectively.     

CaCu3Ti4O12陶瓷深陷阱松弛特性研究

研究了固相反应法及共沉淀法制备的CaCu3Ti4O12陶瓷深陷阱松弛特性.测试了CaCu3Ti4O12陶瓷在频率为0.1～107Hz,温度为–100～100℃的范围内的介电频谱及温谱.通过对不同温度下介电频谱的分析,研究了双Schottky势垒结构中深陷阱松弛特性.研究表明:在交流小信号作用下,由于Schottky势垒中深陷阱与Fermi能级的上下关系发生变化,引起深陷阱电子发射和俘获即电子松弛过程,在介电频谱中表现为松弛峰;并且由介电谱的分析结果可得深陷阱能级等微观参数.比较不同试样的深陷阱参数可知:在CaCu3Ti4O12陶瓷中,在导带以下约0.52和0.12 eV的能级处存在由本征缺陷产生的深陷阱.介电温谱与频谱的分析类似,二者可以互为补充.     

Microstructural evolution and dielectric properties of Cu-deficient and Cu-excess CaCu3Ti4O12 ceramics

The microstructural evolution and dielectric properties of CaCu_3−xTi₄O_12−x (3 − x = 2.8-3.05) ceramics were investigated. Normal grain growth behavior was observed at Cu/Ca ≤ 2.9, while abnormal grain growth was observed at Cu/Ca ≥ 2.95. A CuO-rich intergranular liquid phase at Cu/Ca ≥ 2.95 and angular grain morphology were the main reasons for abnormal grain growth. However, the abundant intergranular liquid at Cu/Ca = 3.05 significantly affected the relative dielectric permittivity and dielectric loss. The CuO composition is the key parameter that determines the microstructure and dielectric properties of CCTO ceramics.     

Elastic modulus and hardness of CaTiO3, CaCu3Ti4O12 and CaTiO3/CaCu3Ti4O12 mixture

Three ceramic systems, CaTiO₃ (CTO), CaCu₃Ti₄O₁₂ (CCTO) and intermediate nonstoichiometric CaTiO₃/CaCu₃Ti₄O₁₂ mixtures (CTO.CCTO), were investigated and characterized. The ceramics were sintered at 1100 °C for 180 min. The surface morphology and structures were investigated by XRD and SEM. Elastic modulus and hardness of the surfaces were studied by instrumented indentation. It was observed that CCTO presented the higher mechanical properties (E = 256 GPa, hardness = 10.6 GPa), while CTO/CCTO mixture showed intermediate properties between CTO and CCTO.