Accurate methods for study of light emission from quantum wells confined in a microcavity

Photomodulated reflectance (PR) and conventional reflectance studies have been performed on an InGaP/AlGaInP/Al/sub x1/Ga/sub y1/As/Al/sub x2/Ga/sub y2/As resonant-cavity light emitting diode structure in the red spectral region. The PR spectra show prominent signals from the Fabry-Perot cavity mode and the quantum-well (QW) ground state excitonic transition. This high-precision technique, and its variations as functions of incidence angle and temperature, as reported in this article, allow one to investigate light emission from the QW confined in a microcavity with relation to the Fabry-Perot mode, and is the only known nonconductive, nondestructive method of doing so.     

A novel modulation scheme in semiconductor light emitters with quantum microcavities: high speed intensity modulation by switching of coupling efficiency of spontaneous emission

A modulation of coupling efficiency of spontaneous emission is proposed theoretically to result in an ultrawideband modulation of spontaneous output intensity in semiconductor light-emitting devices with quantum microcavities. The proposed modulation scheme does not involve changes in carrier population, but relies purely on the modulation of the coupling efficiency of spontaneous emission caused by electric-field-induced tuning of emission wavelength. An extremely wideband modulation is predicted, showing a cutoff frequency over 10/sup 11/ Hz and being completely free of recombination lifetime limitation.<>     

Optical switching characteristics of a bistable resonant tunnelling light emitting diode

The electrical and optical characteristics of a bistable resonant tunnelling light emitting diode are reported. The maximum frequency of operation is determined by electron tunnelling escape rather than by radiative recombination. Switching time constants of less than 200 ps are measured, limited by the duration of the electrical excitation.<>     

Acoustic emission study of defects in gallium phosphide light emitting diodes

Acoustic emission was observed from GaP:N light emitting diodes during stress operation and correlated with the degradation of light output. Acoustic emission was found to be due to the generation of dislocations which were revealed by etch pits after degradation. Acoustic signals were detected with a PZT transducer directly placed under the diode chip. Two components of acoustic signals were recorded, i.e., sharp pulses and a CW component. The light output decreased in proportion to the logarithm of time for a certain period after which the light output degraded irregularly. In the logarithmic decay period no acoustic emission was observed and the etch pit density did not increase.- The irregular degradation was always accompanied by acoustic emission and the etch pit density increased remarkably. Luminescence spectra and effective carrier concentration profiles were also compared before and after degradation. It is shown that the acoustic emission monitoring provides a novel technique to reliability physics of compound semiconductors.     

High efficiency warm white phosphorescent organic light emitting devices based on blue light emission from a bipolar mixed-host

In this study, we demonstrate a high-efficiency and low turn-on voltage warm white phosphorescent organic light emitting devices (PH-WOLEDs) based on a blue mixed-host emission layer (EML) and an orange ultrathin layer. The device has a simple structure and would simplify the fabrication process and reduce fabrication costs. The concept is based on the design a high-efficiency blue mixed-host EML, using an electron-transport material, 4,6-Bis(3,5-di(pyridin-4-yl) phenyl)-2-(3-(pyridin-3-yl) phenyl) pyrimidine (B4PYMPM) to enhance the carrier balance ability of the hole-transport material 1,3-Bis(carbazol-9-yl) benzene (MCP) which operates as the mixed-host and when the MCP: B4PYMPM ratio in the mixed-film was 4:1 got better effects. Based on the blue EML, we realized WOLEDs, characterized by a peak power efficiency of 71.3 lm/W at 3.1 V and a low turn-on voltage of 2.65 V. The mixed-host blue EML exhibited a much higher performance compared to the MCP host. Stable warm white light emission with Commission International de L'Eclairage (CIE) coordinates from (0.37, 0.45) to (0.38, 0.47) for a luminance value ranging from 1000 to 10,000 cd/m² was obtained.     

GaN基蓝光LED的多量子阱结构优化

基于量子阱结构中载流子遂穿势垒原理,使用APSYS软件模拟不同条件下具有不同垒高、垒宽及阱宽的发光二极管（LED）的I-V特性、光强和内量子效率（IQE）的变化,发现自发发射光谱存在红移现象。通过与传统LED的多量子阱（MQW）参数比较发现,当阱宽为2 nm、垒宽为4 nm、垒中In含量为0.08和驱动电流为20mA时...     

Temperature effects on output characteristics of quantum dot white light emitting diode

In this paper,we proposed quantum dot (QD) based structure for implementation of white light emitting diode (WLED) based on InGaN/GaN.The proposed structure included three layers of InGaN QD with box s...     

Effects of substrate topography on current injection and light emission properties of organic light emitting devices

Substrate topography plays a critical role in the function of nano-scale materials and devices. We study small molecular organic light emitting devices (OLEDs) deposited onto non-planar substrates, where the substrate’s radius of curvature in some regions approaches the thickness of the active device layers. As a result, the electric field profile inside the organic charge transport layers is modified, influencing carrier injection, transport, and light emission properties. Experiments and numerical modeling suggest that charge balance and electroluminescence efficiency potentially can be improved in electron injection-limited OLED architectures via substrate geometry. These findings elucidate the optoelectronic behavior (and degradation) of OLEDs on imperfect substrates, and suggest a strategy based on substrate topography for controlling device behavior.     

量子点发光二极管中载流子注入机理的研究

针对量子点(QDs)发光二极管(QLED)中载流子注 入不平衡的问题,对载流子的注入机理进行了研 究。在隧穿注入和空间电荷限制电流(SCLC)模型的基础上,仿真分析了空穴和电子在QDs 层的注入情况,制备 了QLED的样品。CdSe/CdS作为QDs层,PEDOT:PSS作为空穴注入层(HIL),TPD作为 空穴传输层(HTL),Alq₃作为电子传输层(ETL)。优选的QDs层厚为25nm时,确定了TPD和Alq₃的理论最优厚分别为48nm。研究发现, 当驱动电压低于6.5V时,隧穿注入电流在载流子的传输过 程中起主导作用;高于6.5V时,SCLC在载流子的传输过程中起主导 作用。实验结果表明,当 Alq₃厚为20nm时,器件发出QDs的红光,随着Alq₃厚度的增加, 器件开始出现绿光,实验结果与仿 真结果基本吻合。研究结果对QLED的制备具有理论借鉴意义。     

Temperature measurement in a silicon carbide light emitting diode by raman scattering

Raman spectra of the transverse-optic phonon mode from a light-emitting layer of a SiC diode have been measured. The phonon peak broadens and shifts to lower frequency with the rise of temperature when the injected current is increased. The frequency shift was compared with a result for bulk reference measured separately at various temperatures. We found that the temperature of the light-emitting layer reached 350°C at a current density of ∼200 A/cm².     

染料超荧光的ps研究

用超短光脉冲激励染料溶液,进行超荧光的研究:1.超荧光光谱峰移动和光谱宽度;2.辐射谱精细结构的产生机理。     

19 ps switching of a bistable laser diode with 30 fJ optical pulses

19-ps optical switch-on of a bistable laser diode with only 30-fJ input coupled optical energy at a repetition rate of 500 MHz is reported. The bistable laser was an inhomogeneously pumped three-section Fabry-Periot laser diode. The switch-off time was 94 ps, probably limited by the duration of the electrical reset pulse. Longer turn-on delay times were recorded when switching with less input energy     

Filling of light emitting diode via-holes by MOCVD

The growth of epitaxial films on featured substrates has an important device application in junction-confinement, double hetero-structure light emitting diodes. These devices are presently grown by a liquid phase epitaxy process but growth by metalorganic chemical vapor deposition is desirable because of MOCVD's superior surface quality, uniformity, and throughput. This paper describes the effect of growth parameters on AlGaAs films deposited by atmospheric-pressure MOCVD into substrate holes typically made in the fabrication of junction-confinement LEDs. MOCVD growth replicates the substrate features; it does not give a planar surface over the holes. The behavior of epitaxy filling into holes is strongly dependent on growth temperature and total gas flow and largely independent of substrate misorientation and the thickness of the layer grown. Wet-etched holes formed (ll0)-oriented V-groove and dovetail-groove features on the hole circumference. Faceting of the MOCVD growth was seen on the wall with the (111)A feature while smooth growth was seen on the etched (111)B surface. Deceased.     

非对称高斯势量子点中LO声子自发辐射率的研究

本文在偶极近似下,基于费米黄金规则,采用LL P-Pekar幺正变换变分法研究了双参 量非对称高斯势量子点(QD)中体纵光学(LO)声子的自发辐射率,并讨论了它的单参量抛 物势近似,数值结果表明:声子自发辐射率w随电声耦合强度α、色散系数η 的增加而减小,随高 斯势阱深V₀的增加而增大;声子自发辐射率w随高斯势阱宽L的变化呈现非对称“高斯分布”并受到电声 耦合强度α、色散系数η和高斯势阱深V₀的显著影响;选用双参量非对称高斯势VG描写QD中电子的受 限效应能够反映声子自发辐射的更多量子化特性,而其单参量抛物势VP近似给出的结果较为简单和粗糙。     

Origin of the radiative emission in blue-green light emitting diodes based on GaN/InGaN heterostructures

Phase separation effects induced by spinodal decomposition taking place in cubic In_xGa_1−xN epitaxial layers were investigated by means of resonant Raman scattering (RRS) and X-ray diffractometry (XRD) experiments. The alloy epilayers were grown by radio-frequency plasma-assisted molecular beam epitaxy on GaAs (001) substrates. Ab initio theoretical calculation of the alloy phase diagram predicts the formation of In-rich phases in the layers which is confirmed by the RRS and XRD experiments. Photoluminescence observed at room temperature and 30 K from the layers shows light emission in the blue-green region of the spectrum. RRS experiments demonstrated that the observed emission is directly linked to the In-rich separated phases (quantum dots) in the alloy. The results support the model that the origin of light emission in nitride-based light emitting diodes and laser diodes is related to quantum confinement effects taking place in quantum dots formed in the InGaN layers, active media of the devices.     

Correlation between interlayer thickness and device performance in blue phosphorescent organic light emitting diodes with a quantum well structure

We systematically examined the effects of interlayer (ITL) thickness variation in an emission layer (EML) on electrical and optical characteristics of blue phosphorescent organic light-emitting diodes. The EML consisted of a quantum well structure using a hole transport material 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) as an ITL. This ITL facilitated the confinement of charge carriers in the recombination zone (RZ), adjusted the charge carrier balance in the EML, and prevented the triplet exciton loss to adjacent transport layers. The thickness variation in the ITL greatly influenced the size and location of the RZ and the exciton density (ED), which is related to charge balance and exciton diffusion in the EML. A micro-cavity effect around 500 nm and the corresponding redshift/blueshift in the electroluminescent spectrum arose from different ITL thicknesses. Remarkably, the device having a 5-nm-thick TAPC ITL showed better current and power efficiencies than those of any other devices because of the rearrangement of the locations of excitons and ED through control of the hole/electron charge density.     

Integration of CMOS-VLSI and light emitting sources by capacitivecoupling

A novel principle is proposed for integration of III-V light sources with CMOS VLSI circuits. The flipped III-V chip is connected to the CMOS chip by capacitive coupling instead of by a conductive connection method. Energy is transmitted through a dielectric connection layer using a high frequency carrier signal. The proposed system requires no post processing of the CMOS circuits and offers potentially high reworkability and good coupling efficiency     

Improvement of AlGaInP light emitting diode by sulfide passivation

The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated.     

Degradation of light emitting diodes:a proposed methodology

Due to their long lifetime and high efficacy,light emitting diodes have the potential to revolutionize the illumination industry.However,self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode.In this research,a methodology to investigate the degradation of the LED emitter has been proposed.The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters.     

Degradation of light emitting diodes: a proposed methodology

Due to their long lifetime and high efficacy, light emitting diodes have the potential to revolutionize the illumination industry. However, self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode. In this research, a methodology to investigate the degradation of the LED emitter has been proposed. The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters.