Design and performance analysis of double cantilever type capacitive shunt RF MEMS switch

This paper presents a novel structure of capacitance shunt type RF switch for 5G applications. The proposed RF MEMS switch is having Cantilever type designed with optimized dimensions to operate in V-band applications. The electromechanical analysis is done by using the COMSOL tool. The actuation voltage of the proposed switch is 10.5 V with the air gap of 1 µm and gold as a beam material. The proposed switch with the meanders and perforations show the scattering parameters in HFSS software such as insertion loss (S₁₂) of − 0.033 dB and return loss (S₁₁) less than − 48 dB and the isolation (S₂₁) calculated in off-state as − 62 dB at 50 GHz.

     

Analysis of a novel RF MEMS switch using different meander techniques

In this paper, two types of RF MEMS switches namely step structure and Normal beam structure are designed and analyzed using different meander techniques. Three techniques namely plus, zigzag and three-square meander were used to lower the pull-in voltage. The actuating beam is designed with the rectangular perforations affects the performance of a switch by lowering the pull-in voltage, switching speed and results in better isolation. In this paper a comparative analysis is done for all three meander techniques with and without perforations on the beam. Total six structures have been designed with the combination three meanders and two different beam structures. The proposed stepdown structure exhibits high performance characteristics with a very low pull-in voltage of 1.2 V having an airgap of 0.8 µm between the actuation electrodes. The gold is used as beam material and HfO₂ as the dielectric material such that the upstate and downstate capacitance is seen as 1.02 fF and 49 fF. The FEM analysis is done to calculate the spring constant and thereby the pull-in voltage and behavior of the switch is studied with various parameters. The switch with a step structure and three-square meander configuration has shown best performance of all by requiring a pull-in voltage of 1.2 V and lower switching time of 0.2 µs. The proposed switch also exhibits good RF performance characteristics with an insertion loss below − 0.07 dB and return loss below − 60 dB over the frequency range of 1–40 GHz. At 28 GHz a high isolation of − 68 dB is exhibited.

     

Performance analysis of RF MEMS capacitive switch with non uniform meandering technique

This Paper reports on investigation of High C_on C_off ratio Capacitive Shunt RF MEMS Switch and detailed comparison between uniform three meander beam with non-uniform single meander beam RF MEMS switch. RF MEMS Switches are designed for operation in the range 5–40 GHz. Pull in analysis is performed with gold as a beam material. Simulation reveals that use of high K dielectric material can drastically improve the capacitance ratio of switch. For the same geometry, pull in voltage is 2.45 V for HfO₂, 2.7 V for Si₃N₄ and Capacitive Ratio of the switch with Si₃N₄ is 83.75 and Capacitive Ratio with HfO₂ is 223 at 2g₀ (air gap) and 0.8 μm thickness of beam. The Radio Frequency performance of RF MEMS switch is obtained by scattering parameters (insertion loss, Return loss and isolation) which are mainly dominated by down to up capacitance ratio and MEMS bridge geometries. RF analysis shows that insertion loss as low as ?0.4 dB at 20 GHz and isolation as high as 80 dB at 20 GHz can be achieved. Investigation of three uniform meander Design and non-uniform single meander design reveals that use of non-uniform design reduces the design complexity and saves substrate area still maintaining almost same device performance. S-parameter analysis is carried out to compare device performance for both structures. DC analysis of the proposed switch is carried out using Coventorware and RF analysis is performed in MATLAB.     

RF-MEMS Capacitive Switches Fabricated Using Printed Circuit Processing Techniques

This paper presents radio frequency microelectromechanical systems (RF-MEMS) capacitive switches fabricated using printed circuit processing techniques. The key feature of this approach is the use of most commonly used flexible circuit film, Kapton E polyimide film, as the movable switch membrane. The physical dimensions of these switches are in the mesoscale range. For example, electrode area of a typical capacitive shunt switch on coplanar waveguide (CPW) is 2 mmtimes1 mm, respectively. A CPW shunt switch with insertion loss <0.4 dB and isolation >10 dB in the frequency range of 8 to 30 GHz is reported. K-band, Ku-band, and X-band high-isolation CPW shunt switches designed by inductive compensation of the switch down-position capacitance are also presented. Inductance compensation has been implemented by introducing inductive step-in-width junctions in the MEMS switch electrode. The K-band switch provides a maximum isolation value of 54 dB at 18 GHz. For the K-band switch, the insertion loss is less than 0.3-0.4 dB in the frequency range of 1-30 GHz and the isolation values are better than 20 dB in the frequency range of 12 to 30 GHz. The Ku-band switch provides a maximum isolation of 46 dB at 16.5 GHz. For the Ku-band switch, the insertion loss is less than 0.4-0.45 dB in the frequency range of 1-30 GHz and the isolation is greater than 20 dB in the frequency range of 12 to 22 GHz. The X-band switch provides a maximum isolation value of 32 dB at 10.6 GHz. The insertion loss is less than 0.25-0.3 dB in the frequency range of 1-18 GHz and the isolation is better than 20 dB in the frequency range of 8.5 to 13.5 GHz for the X-band switch. The measured typical pull-down voltage is in the range of 100-120 for this type of switches. These switches are uniquely suitable for monolithic integration with printed circuits and antennas on organic laminate substrates     

一种超宽带MEMS开关的研制

MEMS射频器件,特别是超宽带器件,对其中的射频器件提出了宽带指标的要求。以此为背景,在理论分析的基础上设计了一种应用于12.5 GHz~50 GHz频带的超宽带双膜桥式MEMS开关,该开关具备低损耗、高隔离度等特点,文中给出了开关的制备工艺,并进行流水完成了芯片制备。经测试,该开关在设计频段内,回波损耗优于20 dB,插入损耗典型值0.3 dB@12.5~35 GHz,优于0.5 dB@45 GHz,隔离度全频段优于20 dB,驱动电压在45 V~55 V之间。     

Broadband radio frequency MEMS series contact switch with low insertion loss

A new radio frequency (RF) micro-electro-mechanical-system (MEMS) single cantilever series contact switch is designed as a low-insertion-loss and low-power electronic component that is intended to provide integrated control of the opening and closing signals of other MEMS devices operating over a wide frequency range (DC–60 GHz). The MEMS switching element consists of an A-type top electrode that is fixed onto coplanar waveguide lines through anchor points to reduce the insertion loss in the on-state of the device. The air gap between the top electrode and the actuation electrode of the designed MEMS switch is optimized to improve the isolation characteristics of the switch. In addition, the switching voltage required is approximately 24 V. The simulation results presented here show that the insertion loss of the switch in the on-state is less than 0.71 dB, while the minimum isolation is 20.69 dB in the off-state at 60 GHz. The proposed RF MEMS switch will be useful for communication devices and test instruments used in broadband applications.

     

Design and modeling of a continuously variable piezoelectric RF MEMS switch

A structure for a piezoelectrically actuated capacitive RF MEMS switch that is continuously variable between the ON state and the OFF state has been proposed. The device is based on variable capacitance using a cantilever fixed at both ends that is actuated using a lead zirconate titanate thin film. Because the device is contactless, the reliability issues common in contact-type RF MEMS switches can be avoided. A comprehensive mathematical model has been developed in order to study the performance of the device, and allow for design optimization. Electrical measurements on test structures have been compared with the performance predicted by the model, and the results used to design a prototype RF MEMS switch. The model and simulations indicate the proposed switch structure can provide an insertion loss better than 0.7 dB and an isolation of more than 10 dB between 6 and 14 GHz with an actuation voltage of 22.4 V. The state of the device is continuously variable between the ON state and the OFF state, with a tunable range of capacitance of more than 15\(\times \).     

Integration of piezoelectric tunable capacitors and bonded-wire inductors for contactless RF switch and tunable filter

This paper presents the design, fabrication, and characterization of a contactless radio frequency (RF) microelectromechanical system (MEMS) switch, composed of two surface-micromachined piezoelectric tunable capacitors and two bonded-wire inductors. The measured insertion loss and power isolation of the fabricated switch are 2.2 and 10.1 dB, respectively, with a capacitance variation of 4:1 over a narrow bandwidth near 2.2 GHz. This novel approach of using inductors eases the deflection requirement for the deformable bridge of the variable capacitor, and allows piezoelectric ZnO film to be used to deflect the capacitor bridge to vary the air gap, thus yielding a contactless RF switch.     

A low voltage vertical comb RF MEMS switch

Design and simulations of a novel RF MEMS switch is reported as a solution to many RF wireless applications. A new comb structure for RF MEMS switch is proposed for low voltage and high frequency operations. Isolation degree and actuation voltage, both improved by the new structure. The mechanical and electromagnetic simulation results show better performance for this new switch compared to parallel plate switch. The simulation is done by the intellisuit and HFSS softwares. The Simulation results show that the actuation voltage is decreased by 13% and the linearity of the switch displacement with respect to the actuation voltage is improved by 22% compared to the parallel plate structure. The HFSS simulation results indicate an insertion loss better than 0.33 dB at 50 GHz and isolation greater than 13.4 dB at 50 GHz.     

A lateral RF MEMS capacitive switch utilizing parylene as dielectric

A novel lateral RF MEMS capacitive switch was reported in this paper. This switch employed parylene as the dielectric material, taking advantages of its low temperature deposition and conformal coating. The low resistivity single crystalline silicon served as the material of the mechanical structures. The switch was fabricated by bulk micromachining processes with only two lithographic masks and a shadow mask. The dynamical response, parylene insulation performance, and RF performances of the fabricated switch were characterized, respectively. The switching time from the open state to the close state was 105 μs at a loaded voltage of 78 V, while 15.6 μs from the close state to the open state. The isolation was better than 15 dB from 20 to 40 GHz, and the maximal isolation was 23.5 dB at 25 GHz; while the insertion loss was below 1.4 dB at 25 GHz, when bonding wires connected the ground lines. These results verify that the parylene is a good candidate material to act as sidewall dielectric to realize the lateral capacitive switch.     

Design of novel compact anti-stiction and low insertion loss RF MEMS switch

A novel torsional RF MEMS capacitive switch design on silicon substrate is presented. The optimized switch topology such as reduction in up-state capacitance results in insertion loss better than ?0.1 dB till 20 GHz. Off to on state capacitance ratio is also improved by 18 fold and isolation is better than ?43 dB at 9.5 GHz. The achieved on state return loss is ?38 dB as compared to ?21 dB at 9.5 GHz. An optimized reduction in contact area and use of floating metal layer increases the switching speed from 56 to 46 μsec. It also increases the switch reliability by alleviating the stiction.     

Design and investigation of a low insertion loss,broadband, enhanced self and hold down power RF-MEMS switch

This paper presents a low insertion loss capacitive shunt RF-MEMS switch. In the presented design, float metal concept is utilized to reduce the capacitance in up-state of the device. Float metal switch shows an insertion loss <0.11 dB, a return loss below 26.27 dB up to 25 GHz as compared to 0.81 dB insertion, 8.67 dB return loss for the conventional switch without float metal. OFF state response is same for the both devices. Further pull-in voltage of 12.75 V and switching time of 69.62 µs have been observed in case of the conventional switch whereas device with float metal have 11.75 V and 56.41 µs. Improvement of around 2.5 times in bandwidth and 4 times in input power has been observed without self actuation, hold down problem. The designed switch can be useful at device and sub-system level for multi-band applications.     

MEMS capacitive series switch fabricated using PCB technology

In this article, an RF MEMS capacitive series switch fabricated using printed circuit processing techniques is discussed. Design, modeling, fabrication, and characterization of the CPW series switch are presented. An example CPW series capacitive switch with insertion loss less than 0.5 dB in the frequency range of 13–18 GHz and isolation better than 10 dB up to 18 GHz is discussed. The switch provides a minimum insertion loss of about 0.1 dB at the self‐resonance frequency of 16 GHz and a maximum isolation of about 42 dB at 1 GHz. © 2007 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2007.     

Design and modeling of a novel RF MEMS series switch with low actuation voltage

This paper presents the design, analysis, modeling and simulation of a novel RF MEMS series switches with low actuation voltage. A mechanical modeling is presented to describe the behavior of the series switch. The switch is designed with special mechanical structures. The novel mechanical and mathematical modeling of the switch leads to calculation of the accurate actuation voltage. The spring constant has been calculated in relation to the presence of the residual stress in the beam. The calculated spring constant for this beam is used to determine the accurate actuation voltage. The size of the switch is 60 × 110 µm². The designed RF MEMS series switch was simulated using Intellisuite MEMS tool. He calculated actuation voltage is 4.05 V and simulated one is 4.2 V for 0.6 µm beam thickness. The calculated result is also very close with simulated one. The proposed switch compared with other electrostatic switches has low actuation voltage and small size. The RF characteristics were simulated using HFSS software and the switch has good RF performance. The insertion loss of 0.067 dB, return loss of 26 dB and isolation of 16 dB were achieved at 40 GHz.     

High isolation microstrip GaN‐HEMT Single‐FET Switch

In this contribution an analytical approach to the design of high‐isolation microwave transmission line‐resonated switches is presented. Simulated and measured performance of a GaN HEMT single‐FET switch cell topology and the one of a complete SPDT using the proposed approach are presented to demonstrate the approach feasibility and effectiveness. The resulting SPDT, operating at X Band, is featured by 1 dB insertion loss, isolation better than 37 dB all over the operating bandwidth and a power handling capability higher than 39 dBm. © 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2010.     

10-26GHz CMOS六位数控衰减器设计与实现

为了使衰减器更好的适应相控阵系统对高集成度波束赋形电路的应用需求。基于55nm CMOS工艺,设计了一款具有低插入损耗、低附加相移特性的六位数控衰减器,该数控衰减器采用桥T和π型衰减结构级联而成,在10-26 GHz频率范围内实现步进为0.5dB、动态范围为0-31.5 dB的信号幅度衰减。为减小插入损耗,NMOS开关采用悬浮栅和悬浮衬底连接方式,同时采用了电容补偿网络和电感补偿以有效降低附加相移。仿真结果表明,在10-26GHz的频带范围内,该数控衰减器的插入损耗小于-7dB,输入/输出回波小于-10dB,附加相移小于±3°,所有衰减态的衰减误差均方根小于0.8dB,芯片的核心电路面积为0.36 mm×0.16 mm。     

A Liquid–Solid Direct Contact Low-Loss RF Micro Switch

This paper reports the design, fabrication, and testing of a liquid-metal (LM) droplet-based radio-frequency microelectromechanical systems (RF MEMS) shunt switch with dc-40 GHz performance. The switch demonstrates better than 0.3 dB insertion loss and 20 dB isolation up to 40 GHz, achieving significant improvements over previous LM-based RF MEMS switches. The improvement is attributed to use of electrowetting on dielectric (EWOD) as a new actuation mechanism, which allows design optimized for RF switching. A two-droplet design is devised to solve the biasing problem of the actuation electrode that would otherwise limit the performance of a single-droplet design. The switch design uses a microframe structure to accurately position the liquid-solid contact line while also absorbing variations in deposited LM volumes. By sliding the liquid-solid contact line electrostatically through EWOD, the switch demonstrates bounceless switching, low switch-on time (60 mus), and low power consumption (10 nJ per cycle).     

Dual‐wideband filtering power divider based on center‐fed three‐line coupled structure

In this article, a dual‐wideband filtering power divider is proposed by using a center‐fed three‐line coupled structure with three open stubs and two isolation resistors. The center‐fed three‐line coupled structure can generate two wide passbands separated by a transmission zero (TZ). The three open stubs can achieve four TZs around the two passbands, which is conducive to the frequency selectivity. Compared with the reported designs, the bandwidth is extended and the performance of isolation, insertion loss and circuit size can reach balance. The proposed design is implemented with size of 0.22 λ_g × 0.39 λ_g (λ_g is the guided wavelength at the center frequency of the lower passband) which exhibits the 3‐dB fractional bandwidths of 56.5%/24.27% and the insertion loss of 0.51/0.68 dB at the center frequency of two passband (f₁/ f₂) of 1.94/4.2 GHz, while the isolation at f₁/f₂ are higher than 22.5/20.1 dB.     

Isolation improvement in dual-band astroid shaped MIMO DRA for LTE and ISM applications

This article presents the design of a novel astroid shaped dielectric resonator antenna (DRA) constructed from PTFE Teflon material with a dielectric constant of ε_r = 2.1 and a loss tangent tan δ = 0.0002 on an FR4 grounded substrate for LTE and ISM band applications. Inverted Omega ?-shaped feed along with asymmetric E-shaped dual metallic strips in the partial ground is used to obtain dual-band characteristics. A light weight, cost-effective plastic material is used to design the antenna. An isolation of 26.5 dB and 24.6 dB is achieved in the two frequency bands 1.8 GHz and 2.4 GHz respectively by modifying the ground plane. Metallic strips and stubs in the ground are used to enhance the isolation in the proposed MIMO system. The obtained impedance bandwidths in both the bands are 14.5% and 13%. The performance of the MIMO system is characterized by the envelope correlation coefficient and diversity gain. Good agreement is found between simulated and measured results.     

RF MEMS membrane switches on GaAs substrates for X-band applications

Micromechanical switches have demonstrated great potential at microwave frequencies. For low-loss applications at microwave frequencies, it is important to use high-resistivity substrates. This paper presents the design and fabrication of the shunt-capacitive MEMS switch on GaAs substrates. Analytical mechanical and impedance models of the membrane switch are given, and the results are confirmed by using the ANSYS and HFSS software, respectively. A surface micromachining process, which is compatible with the conventional millimeter-wave integrated circuits (MMICs) fabrication technology, was adopted to fabricate the RF switch on GaAs substrates. Its S-parameter was taken using a HP8510C vector network analyzer and a Cascade Probe station. The measured insertion loss of the switch and its associated transmission line is less than 0.25 dB from 1 to 25.6 GHz, and the isolation may reach -42 dB at its self-resonate frequency of 24.5 GHz. The actuation voltage is about 17 V. The switch has demonstrated lifetimes as long as 5/spl times/10/sup 6/ cycles. The wideband high performance in isolation and insertion loss offers the monolithic integration capability with GaAs MMICs.