真空蒸发制备ZnTe薄膜性能

利用真空蒸发技术在玻璃衬底上获得ZnTe薄膜，在室温下利用Zn和Te单质制备ZnTe薄膜成膜困难且性能起伏不定，通过对不同工艺条件的比较选择，发现在衬底温度大于90℃时制备的样品是一种性能稳定具有良好光学特性的薄膜，提高衬底温度后,ZnTe薄膜具有沿[002]晶向择优取向，并由灰黑色不透明变成砖红色透明，透过率在可见光范围内明显升高。     

化学水浴沉积制备高质量Zn(O,S)薄膜及其性能研究

为获得铜铟镓硒薄膜太阳电池中高质量Zn(O,S)无镉缓冲层薄膜,该研究阐述了柠檬酸三钠作为络合剂制备Zn(O,S)薄膜的成膜机理,系统性研究了该体系下各反应参数对薄膜化学水浴沉积的影响。研究表明,柠檬酸三钠的浓度值显著影响反应类型,异质反应更有利于生成高质量薄膜。同时,柠檬酸三钠与金属离子浓度的比值直接影响成膜质量和成膜速率,适合的pH溶液环境有助于提高Zn(O,S)薄膜沉积的质量。此外,通过工艺参数的优化,获得了电学性能接近传统CdS/CIGS太阳电池的Zn(O,S)/CIGS电池器件。     

In2Se3薄膜生长及结晶择优取向的影响因素研究

(In,Ga)2Se3薄膜的生长结晶性的好坏直接影响着在其基础上化合生长的Cu(In,Ga)Se2(CIGS)薄膜以及CIGS太阳电池器件的性能.实验就多源共蒸发制备In2Se3预制层工艺中3个主要条件,即衬底材质、Se源温度、衬底温度进行研究.分析讨论上述3种因素对In2Se3薄膜的结晶生长和择优取向生长的影响.发现:在Mo/苏打石灰玻璃(Mo/SLG)衬底上生长,Se源温度在270℃以上或衬底温度为380～400℃的较高温度时,制备的In2Se3预制层是单一晶相的In2Se3,其x射线衍射峰是以(110)和(300)峰为择优取向.反之,生长在苏打石灰玻璃(SLG)衬底上,Se源温度为230℃以下或衬底温度为较低温度300℃时,In2Se3预制层结晶质量较差,其X射线衍射峰则多以In2Se3(006)衍射峰为择优取向.     

浸渍提拉法制备TiO2薄膜及其光催化性能的研究

以钛酸四异丙酯为原料配制成胶体,在玻璃管表面制备了TiO2薄膜光催化剂,用该催化剂光催化降解四氯乙烯,并进行薄膜厚度与光解率关系以及催化剂寿命实验,结果表明,其光催化剂效率接近TiO2粉末悬浮体系,薄膜以厚度600－800nm为宜,使用10h,TiO2薄膜光催化活性没有减弱,可连续使用。     

用MOCVD方法制备ZnO：B透明导电薄膜及其性能优化

采用金属氧化物化学气相沉积(MOCVD)方法在石英衬底上生长氧化锌(ZnO)薄膜.改变薄膜材料的生长温度和掺杂气体硼烷(B2H6)的流速,制备一系列薄膜样品.通过x-射线衍射(XRD)、扫描电子显微镜(SEM)、透过率、反射率、电阻率和原子力显微镜(AFM)等测试分析,研究了材料生长温度和B2H6流速对薄膜生长速度、微观结构、薄膜晶向、光学透过率、光学禁带宽度、电阻率、表面粗糙度等特征参量的影响,经过优化实验条件,获得薄膜电阻率在10-3Ω·cm量级,可见光区域光学透过率在85%以上,成功制备低电阻率高光学透过率的ZnO透明导电薄膜.     

Cu(In,Ga)Se2集成电池吸收层的三步共蒸工艺

利用三步共蒸法工艺在10cm×10cm玻璃衬底上生长出电池吸收层CuIn_(0．7)Ga_(0．3)Se_2薄膜。通过XRF和XRD谱,分析了不同预置层(Precursor)(In_(0．7)Ga_(0．3))_2Se_3生长温度下CuIn_(0．7)Ga_(0．3)Se_2薄膜的结构特性。预置层生长温度分别为300、340和400℃时,所制备的集成组件的转换效率对应为4．23%、5．16%和7．03%(测试条件为：AM1．5,1000W/cm~2)。其组件效率的提高,归因于在预置层生长温度为400℃时所制备的CuIn_(0．7)Ga_(0．3)Se_2薄膜具有良好的结构特性和组份均匀性。     

FeS_2薄膜光电性能研究进展

对FeS2 薄膜光电性能的研究现状进行了分析 ,综述了制备方法、硫化工艺及掺杂元素对FeS2 薄膜光电性能的影响以及光电转换效率的研究进展 ,讨论了FeS2 薄膜这种先进太阳能电池材料研究中现存的问题和发展方向。     

效率为12.1%的Cu(In,Ga)Se2薄膜太阳电池

利用共蒸发的三步法制备了较高质量的四元化合物Cu(In，Ga)Se2(CIGS)薄膜，并采用Mo／CIGS／CdS／ZnO结构为基础做出转换效率超过10％的薄膜太阳电池，其最高转换效率达到12．1％(测试条件为：AM1．5，Global 1000W／m^2)。通过与国际最高水平的CIGS太阳电池各参数的比较，分析了我们所制备的CIGS太阳电池在工艺和物理方面存在的问题。     

CdTe薄膜的制备及其光电性能的研究

介绍利用真空化合法合成的碲化镉(CdTe)材料制备的CdTe薄膜结构,电学,光学性能的分析研究结果.将离子注入技术引进到CdTe薄膜的改性研究中,实验发现,离子注入可以改善材料的结晶情况以及光学和电学性能.有可能利用CdTe粉末材料一次制作适合于廉价薄膜太阳光电池的优质的p型CdTe薄膜.     

B_(2)O_(3)包覆NaNi_(1/3)Fe_(1/3)Mn_(1/3)O_(2)正极材料制备及其电化学性能北大核心CSCD

O3型层状氧化物正极材料NaNi_(1/3)Mn_(1/3)Fe_(1/3)O_(2)具有高比容量、低成本和环境友好性等优点,被认为是最有前途的钠离子电池正极材料之一,但在充放电过程中会发生一系列复杂的相变,导致电化学性能较差。本研究报道了一种协同改性方法,以同时提高NaNi_(1/3)Mn_(1/3)Fe_(1/3)O_(2)正极材料的循环稳定性和倍率性能。通过将硼酸粉末和正极材料固相球磨混匀后低温煅烧,在NaNi_(1/3)Mn_(1/3)Fe_(1/3)O_(2)正极材料表面包覆纳米非金属氧化物B_(2)O_(3)。借助X射线衍射仪(XRD)、扫描电子显微技术(SEM)、透射电子显微镜(TEM)和电化学技术等测试手段,对比分析不同包覆量和原材料的形貌和电化学性能,筛选得到最优包覆量为2%(质量分数,余同)。该方法实现了B_(2)O_(3)的均匀包覆,并且没有改变NaNi_(1/3)Mn_(1/3)Fe_(1/3)O_(2)正极材料的晶体结构。通过电化学性能测试表明2%B_(2)O_(3)包覆材料在1 C倍率下循环200圈容量保持率从78%提升至87%。同时,2%B_(2)O_(3)包覆材料的高倍率性能也得到了改善,10 C高倍率下放电比容量从75 mAh/g提升至99 mAh/g。结果表明,这是一种有效且可靠的表面改性策略,可以增强钠离子电池层状氧化物正极材料的电化学性能。     

EBV法制备Znln2S4薄膜的性质研究

用电子束加热真空蒸发法（ＥＢＶ法）制备了厚度为３５０ｎｍ的ＺｎＩｎ２Ｓ４薄膜。研究了最佳成膜工艺条件和最新电子能谱分析结果；通过不同气氛处理可以控制材料的导电类型，典型膜的电阻率为２．５×１０＾－１Ω．ｃｍ，Ｈａｌｌ迁移率为５２ｃｍ＾２．Ｖ＾－１．ｓ＾－１，载流子浓度为１．４２×１０＾１７ｃｍ＾－３，禁带宽度为２．１３ｅＶ。探讨了ＺｎＩｎ２Ｓ４膜的导电机理，并制作了ＺｎＩｎ２Ｓ４－Ｓｉ太阳电池。     

Study of one-step electrodeposition condition for preparation of Culn(Se, S)2 thin films

Some condition parameters for the one-step electrodeposition to prepare the quaternary CuIn(Se, S)₂ thin films were studied. It was found that filtering out the precipitation in the source solution after several hours from the preparation of the solution was good to obtain a given composition quaternary films. The copper to indium ratio of the films changed drastically depending on the applied potential. It became easy to control the film composition in a relatively wide range of the applied potential by decreasing selenium concentration in the source solution.     

(Zn,Cd)S porous layers for dye-sensitized solar cell application

Porous (Zn,Cd)S structures were formed by screen printing of CdS, ZnS, ZnCl₂ and CdCl₂ powders in different configurations and sintering in air at high temperature. The XRD (X-ray diffraction) analysis of these layers sintered at different temperatures revealed that the CdO and ZnO formation in the (Zn,CdS) matrix is by the phase transformation of (Zn,Cd)S. The structure, composition and photosensitivity of this composite structure depends on the sintering temperature, sintering atmosphere and the flux to semiconductor (F/S) ratio. The results indicate that the screen printed (Zn,Cd)S structure may be used as a photoconductor in solid state devices and as a photoelectrode in photo-electro-chemical energy conversion systems.     

Development of Cu(InGa)Se2-based thin-film PV modules with a Zn(O,S,OH)x buffer layer

The CBD-Zn(O,S,OH)_x buffer process is reviewed. Applying this buffer, our highest efficiencies are achieved, such as a circuit (or submodule) efficiency of 14.2% at an aperture area of 864 cm² on a 30 cm × 30 cm-sized substrate and module efficiencies of 13.4% at an aperture area of 3459 cm² on a mosaic module in which four 30 cm × 30 cm-sized circuits are connected in parallel and 12.8% at an aperture area of 3456 cm² on a 30 cm × 120 cm-sized substrate. Our module structure is a cover glass/EVA/MOCVD-BZO window/CBD-Zn(O,S,OH)_x buffer/CIGSS surface layer/CIGS absorber/Mo base electrode/soda-lime glass. Development of both the hardware (i.e. CBD apparatus) applicable to the mass production and the suitable control parameters is necessary to establish the robust baseline process for the CBD-Zn(O,S,OH)_x buffer. Finding of %T monitoring and post-deposition light soaking in this buffer process contributes not only to improve the reproducibility, but also to enhance the electrical yield and the I–V performance.     

Band-gap engineering in CuIn(Se,S)2 absorbers for solar cells

Thin films based on CuInSe₂ have become very successful as absorber layers for solar cells. It is only in the recent past that gallium (Ga) and sulfur (S) were incorporated into CuInSe₂ in order to increase the energy band gap of the film to an optimum value with the ultimate aim of producing more efficient devices. This paper focuses on the incorporation of S into partly selenized CuInSe₂ films in order to produce CuIn(Se,S)₂ films with varying S/Se+S ratios, resulting in different band-gap energies. This was achieved by varying the conditions when selenizing Cu/In alloys in H₂Se/Ar, and then exposing these various partly selenized films to H₂S/Ar under identical conditions.     

Banana peel biowaste-derived carbon composited with Zn(O,S) for solar-light photocatalytic hydrogen generation

Banana peels-derived porous carbon has been synthesized with urea and potassium carbonate mixture and annealed at 700 ? C to decrease the size of carbon particles. The as-prepared carbon is composited with Zn(O,S) to form Zn(O,S)/C with different carbon contents of 1, 2.5, and 5 wt%. All the nanocomposites are identified with XRD, SEM, Raman, TEM, XPS, FTIR, and EPR analyses. The optical and electrochemical properties are also analyzed with DRS, Tauc plot, PL, EIS, TPC, MS, and CV measurements. Furthermore, the amounts of generated hydrogen gas are evaluated in the presence of Zn(O,S), ZC-1, ZC-2.5, and ZC-5 nanocomposites under simulated solar light irradiation. ZC-2.5 with an appropriate amount of banana peels carbon generates 9232 μmol/g in a 5-h photocatalytic reaction. The HER rate is enhanced by 1.7 times compared to pristine Zn(O,S). Incorporating low-cost banana peels carbon improves the separation between photogenerated electron and hole as the active site of carbon in ZC-2.5 attract the electron for hydrogen reduction. In addition, the generated V_o sites on Zn(O,S) during the photocatalytic reaction also increase the water and alcohol oxidation to scavenger the generated holes. This work designed a simple catalytic system with low-cost and environmentally-friendly material to provide an alternative energy source by harvesting solar light energy.