二元氧化物熔盐Na2WO4-WO3的成分分析及电沉积钨涂层的研究

二元氧化物熔盐Na2WO4-WO3是一种理想的电沉积钨涂层熔盐体系,研究该熔盐在不同条件下的成分变化及离子组成对电沉积钨涂层技术参数与性能控制非常重要.通过XRD、Raman光谱和SEM等测试分析技术,系统分析了熔融温度和电沉积时间对二元氧化物熔盐Na2WO4-WO3的成分和离子组成的影响,同时分析了在该熔盐中采用电沉积方法获得的钨涂层的表面形貌.结果表明,熔融温度与电沉积时间对熔盐的成分和离子种类都没有影响,电沉积中主要的离子源来自于阳极钨;电沉积获得的涂层为纯金属钨,而且表面致密均匀.     

钨酸钠含量对镁合金镍钨镀层性能的影响

目前,对镁合金表面镍钨合金镀层的研究多为化学镀镍钨磷三元镀层,工艺复杂,能耗高.采用电沉积法在AZ91D镁合金制备镍钨镀层,采用场发射扫描电镜(FESEM)、能谱成分分析(EDS)和X射线衍射(XRD)对镀层的表面形貌和成分进行分析,用维氏硬度计测量镀层硬度,测量AZ91D镁合金及镀层在3.5 ％NaCl溶液中极化曲线,并结合盐雾试验判定其耐腐蚀性,研究了镀液中钨酸钠含量对所得镀层性能的影响.结果表明:随着镀液中Na2WO4·2H2O浓度的增加,镀层钨含量不断增加,镍钨置换固溶体数量增加,从而起到提高镀层硬度和耐磨性、细化镀层晶粒、提高耐蚀性的效果;Na2 WO4·2H2O浓度超过65 g/L时,继续添加Na2WO4·2H2O对镀层优化作用减弱;当Na2WO4·2H2O浓度为75 g/L时,镀层钨含量为25.06％,硬度达483 HV,自腐蚀电位-1.124 V,自腐蚀电流10.80 μA/cm2,所制备的镍钨镀层对镁合金基体具有耐磨耐蚀保护作用.     

电镀非晶态镍钨合金工艺研究

研究了电镀非晶态镍钨合金工艺,采用EDS、XRD等手段检测了镍钨合金镀层,并将工艺条件如电流密度Jc、镀液pH值、镀液温度等对镀层的影响进行了比较,得出非晶态镍钨合金电镀的最佳工艺:[W]/([W] [Ni])为0.6～0.8,Jc=6.0～12.0 A/dm2,温度55～65℃,pH=6.5～7.5.结果表明,W含量质量分数高于44%的镍钨合金镀层结构为非晶态;且在此工艺下易得到钨含量在44%以上的非晶态钨合金镀层.     

镍铁钨合金电沉积工艺

为获得性能良好的镍铁钨合金镀层,研究了电解液pH值、温度、电流密度、柠檬酸钠浓度对施镀阴极电流效率和镍铁钨合金镀层组分、表面形貌、显微硬度的影响.结果表明:镀液pH值对镀层形貌和阴极电流效率影响较大;随柠檬酸钠浓度增加,电流效率逐渐降低,镀层表面形貌更加粗糙.在镀液pH=8,温度70℃,电流密度7 A/dm2,柠檬酸钠...     

二次正交旋转组合法优化Ni-W-P脉冲电沉积工艺

为解决油田设备中油管与油杆的磨损与腐蚀问题,通过脉冲电沉积方法在抽油杆常用钢材30Cr Mo基体上制备了Ni-W-P三元合金镀层,采用5因素5水平的二次正交旋转回归组合试验,对温度、pH值、占空比、电流密度、频率等工艺参数进行了优选。采用显微硬度计对36组镀层进行显微硬度测试,利用DPS软件分析获得5因素与镀层硬度之间的数学模型,并研究了各参数的影响规律,获得了电沉积工艺参数最优组合。结果表明:pH值对镀层硬度影响效果最显著,温度、占空比和平均电流密度对镀层硬度的影响规律与pH值相似,均随变量的增大呈先增后减的趋势;在温度为60℃、pH值为8、占空比为0.8、平均电流密度为6 A/dm2、频率为80 Hz的优化工艺下获得的镀层硬度为812.4 HV2 N,自腐蚀电流密度为2.576μA/cm2,且镀层为非晶镀层,具有优良的耐磨、耐蚀性。     

脉冲电沉积纳米Ni-TiN复合镀层

为了改善基体的耐磨性能,采用脉冲电沉积法,在不锈钢基体上制备纳米Ni-TiN复合镀层.研究了TiN粒子浓度、电流密度及搅拌速度等对复合镀层磨损量的影响.利用高分辨电子显微镜对复合镀层进行观察,并进行腐蚀试验测试.结果表明:纳米Ni-TiN复合镀层的最佳工艺参数为TiN粒子的浓度4 g/L,电流密度4 A/dm2,搅拌速度2000 r/min.在纳米Ni-TiN镀层中,纳米TiN粒子的直径均不超过50 nm,镍晶粒得到细化;且该复合镀层具有优良的耐腐蚀性.     

熔融盐电镀Ta的工艺优化及镀层性能分析

目前,通过电镀法获得Ta镀层的报道较少。采用正交试验对熔盐镀Ta的工艺参数进行优选,研究时间、温度、电流密度和表面粗糙度对镀层性能的影响,并对Ta镀层的表面形貌、镀层厚度、镀层退火前后物相、化学成分、硬度和结合强度进行分析。结果表明:电镀时间3 h,温度750℃,电流密度80 m A/cm2,试样表面粗糙度0.05μm时,所得镀层均匀连续,厚度约15μm;800℃下退火4 h可提高镀层结晶度,使亚稳相向α相转变;镀层与基体结合处存在疏松氧化结构,镀层结合强度为40 N左右。     

碱性条件下Fe-P-B合金电镀

研究了碱性溶液中镀液组成、阴极电流密度、温度、pH值对Fe-P-B合金电镀层沉积速率和组成的影响,优化了工艺,在最佳工艺条件下获得Fe-P-B镀层,并对镀层的耐腐蚀性、结构和结合力进行了分析.结果表明:提高镀液中硫酸亚铁铵含量、溶液pH值、温度和电流密度,镀层沉积速率增加;提高镀液中次亚磷酸钠、丙二酸和硼氢化钠含量,镀层沉积速率先增后降低,出现一个极大值;镀层中B含量的增加会使P含量降低,但提高电流密度和镀液温度时二者都有所增加;在最佳工艺条件下获得的Fe-P-B合金镀层为非晶态结构,和基体结合力优良,耐蚀性良好,在15%NaoH溶液中的耐腐蚀性优于在5%NaCl溶液中.     

Al/β-PbO2电极的制备及其性能

利用直流电沉积的方法,在铝基体上电解沉积β-PbO2镀层。通过条件实验分析了电流密度、镀液温度和沉积时间对电解沉积β-PbO2的电流效率、沉积速度、镀层厚度和硬度的影响,并确定了最佳工艺条件:Pb-(NO3)2200～250g/L,HNO310g/L,电流密度3～4A/dm2,镀液温度50～55℃,电沉积时间4h。     

脉冲电沉积制备Ni-W-Fe-La纳米晶析氢电极材料

脉冲电沉积合金层较为复杂,目前尚未实际应用。采用脉冲电沉积技术制备了Ni-W-Fe-La纳米晶合金析氢镀层,利用扫描电镜、X射线衍射仪、能谱仪等设备测试了合金镀层的形貌、结构和组成。研究了制备工艺对镀层析氢性能的影响。确定了合金镀层的最佳制备工艺条件:机械搅拌下,控制平均电流密度Jm=5A/dm2,峰值电流密度Jp=14A/dm2,占空比R为35%,脉冲频率f=150Hz,pH值6.0～6.5,脉冲时间30min,镀液温度35℃。结果表明:制备的Ni-W-Fe-La镀层为纳米级镀层,其晶粒尺寸为48.73nm;稀土La元素的加入能够明显改变镀层表面形貌、晶粒尺寸以及镀层的耐蚀和析氢电催化活性,析氢电位比直流电沉积所得的同类镀层明显正移。     

Effects of lower cobalt binder concentrations in sintering of tungsten carbide

Cemented tungsten carbides have received much attention because of their superior characteristics. Traditional cemented tungsten carbides usually contain 3–30 wt% binder phase. In this paper, WC with low Co concentration less than 3 wt% is studied using traditional powder metallurgy. The binder phase has tremendous effect on sinterability of WC. High sinterability and high hardness can be achieved for the WC (0.7 μm) with 0.5 wt% Co. Abnormal grain growth (AGG) is often observed in sintering WC with small amount of Co. It seems that AGG is affected by the concentration of Co and a range of Co concentrations may exist for the large amount of AGG. To control the grain size, VC is added to inhibit the grain growth of WC. It is observed that the hardness is affected by the amount of addition of VC. Controlling the ratio of C/W less than unity at low Co concentrations will result in the production of W₂C phase. The hardness of WC–Co is affected by the amount of W₂C phase in the sample and W₂C is stable during the normal cooling process.     

Self-Assembly and Ordering of C60 on the WO2/W（110） Surface

The growth and ordering of C₆₀ molecules on the WO₂/W(110) surface have been studied by low-temperature scanning tunnelling microscopy and spectroscopy (STM and STS), low-energy electron diffraction (LEED), and density functional theory (DFT) calculations. The results indicate the growth of a well-ordered C₆₀ layer on the WO₂/W(110) surface in which the molecules form a close-packed hexagonal structure with a unit cell parameter equal to 0.95 nm. The nucleation of the C₆₀ layer starts at the substrate’s inner step edges. Low-temperature STM of C₆₀ molecules performed at 78 K demonstrates well-resolved molecular orbitals within individual molecules. In the C₆₀ monolayer on the WO₂/W(110) surface, the molecules are aligned in one direction due to intermolecular interaction, as shown by the ordered molecular orbitals of individual C₆₀. STS data obtained from the C₆₀ monolayer on the WO₂/W(110) surface are in good agreement with DFT calculations.     

电沉积钨及钨合金涂层的研究进展

金属钨及含钨涂层具有优良的性能,如高熔点、高硬度、良好的化学稳定性和较低的热膨胀系数,在多个领域被广泛应用,金属钨及含钨涂层有很多制备方法,其中电沉积法具有重要的地位。综述了熔盐电沉积钨涂层及溶液电沉积钨合金涂层的研究进展,并展望了熔盐电沉积钨涂层及溶液电沉积钨合金涂层的发展趋势。     

氮化银铬和氮化钨铬纳米薄膜在微型钻头上的应用

为了了解氮化银铬和氮化钨铬纳米复合薄膜涂层应用于微型钻头加工的潜能,采多靶材非平衡磁控溅射方式制备薄膜,分别将钨(W)和银(Ag)掺杂于氮化铬(CrN)中,形成氮化钨铬(Cr-W-N)和氮化银铬(Cr-Ag-N)纳米复合薄膜,研究其基本特性及涂层于微型钻头表面加工电路板性能.结果表明,虽掺杂Ag导致硬度降低,仍可改善微型钻头加工性能;掺杂W形成W2N化合物混杂于CrN中,因而整体涂层硬度增加,同时大幅提升微型钻头加工性能.经由本研究,确认氮化银铬和氮化钨铬纳米复合薄膜具备改善微型钻头加工电路板的能力.     

JY Ultima2ICP-OES光谱仪测定Ta-2.5W和Ta-10W中钨元素的分析方法研究

采用发射光谱仪建立发射光谱法测定Ta-2.5W和Ta-10W中钨含量的方法。使用高纯氢氧化钽基体的纯钨标准溶液制作工作曲线,钨的分析线为209.475 nm,方法的线性范围为1.25%~15.00%,加标回收率在93.0%~99.0%之间,测定结果的RSD值(n=11)小于0.8%。     

Microstructure and Processing of 3D Printed Tungsten Microlattices and Infiltrated W–Cu Composites

Tungsten is of industrial relevance due its outstanding intrinsic properties (e.g., highest melting‐point of all elements) and therefore difficult to 3D‐print by conventional methods. Here, tungsten micro‐lattices are produced by room‐temperature extrusion‐based 3D‐printing of an ink comprising WO₃–0.5%NiO submicron powders, followed by H₂‐reduction and Ni‐activated sintering. The green bodies underwent isotropic linear shrinkage of ≈50% during the thermal treatment resulting in micro‐lattices, with overall 35–60% open‐porosity, consisting of 95–100% dense W–0.5%Ni struts having ≈80–300 μm diameter. Ball‐milling the powders and inks reduced the sintering temperature needed to achieve full densification from 1400 to 1200 °C and enabled the ink to be extruded through finer nozzles (200 μm). Partial sintering of the struts is achieved when NiO is omitted from the ink, with submicron interconnected‐porosity of ≈34%. Several tungsten micro‐lattices are infiltrated with molten copper at 1300 °C under vacuum, resulting in dense, anisotropic W–Cu composites with 40–65% tungsten volume fraction. Partially sintered struts (containing nickel) with submicron open porosity are also infiltrated with Cu, resulting in co‐continuous W–Cu composites with wide W struts/Cu channels at the lattice scale (hundreds of micrometers), and fine W–Cu interpenetrating network at the strut scale (hundreds of nanometers) allowing for the design of anisotropic mechanical and electrical properties.

     

钨阴极材料及其研究进展

介绍了钨阴极材料的种类,性能特点,应用,并对各种钨阴极材料进行了评述,总结了钨阴极材料研究中丰在的主要问题和研究进展,提出了对钨阴极材料进一步研究和开发的建议。     

P—Si上电沉积非晶Ni—W—P薄膜的耐蚀性研究

对Ｐ－Ｓｉ上电沉积Ｎｉ－Ｗ－Ｐ合金薄膜在３％ＮａＣｌ、０．５ｍｏｌ·ｄｍ＾－３Ｈ２ＳＯ４、１ｍｏｌ·ｄｍ＾－３ＨＣｌ介质中的阳极溶解行为进行了研究,ＸＰＳ分析了钝化膜中各元素的化学价态和存在形式。结果表明,非晶Ｎｉ－Ｗ－Ｐ合金薄膜的耐蚀性远优于晶态Ｎｉ－Ｗ－Ｐ薄膜和非晶Ｎｉ－Ｐ薄膜;高Ｗ含量的非晶Ｎｉ－Ｗ－Ｐ合金薄膜,有较强的耐蚀能力;在ＮａＣｌ介质中非晶Ｎｉ－Ｗ－Ｐ合金形成了由Ｎｉ２Ｏ３、ＮｉＨ     

Synthesis of nano (Ti,W)C powder with preferred orientation and twin boundary structure

(Ti,W)C is a novel additive for high performance cermets. In this study, (Ti_0.88W_0.12)C with the lowest formation energy is synthesized by carbothermal reduction-carbonization in Ar. The starting materials included WO_2.72 with one-dimensional nanostructure, TiO₂ and carbon black. The phase transition temperatures were established by thermal analysis. XRD analysis results disclose that once TiC is formed at a temperature over 1220 °C, W atoms begin to diffuse into the TiC lattices, which is independent of the existing form of tungsten. At a condition of 1500 °C for 180 min, W and C atoms from the decomposed W₂C and WC are fully dissolved in the TiC lattices. Under such a TiC-centered atomic reconfiguration environment, the as-synthesized powder is featured with a BET particle size of 76 nm and texture coefficients TC₍₁₁₁₎ of 1.53 and TC₍₂₀₀₎ of 1.33. Results from SEM and HRTEM reveal that the roughly equiaxed powder particles have characteristics of readily identified twin boundary structure and stacking faults. Microscopic inhomogeneity of W solution atoms is discussed. The revelation of the easily identified twin boundary structure and stacking faults is of great significance to the hard phase regulation for high performance Ti(C,N)-based cermets.     

A New Facile Synthesis of Tungsten Oxide from Tungsten Disulfide: Structure Dependent Supercapacitor and Negative Differential Resistance Properties

Tungsten oxide (WO₃) is an emerging 2D nanomaterial possessing unique physicochemical properties extending a wide spectrum of novel applications which are limited due to lack of efficient synthesis of high‐quality WO₃. Here, a facile new synthetic method of forming WO₃ from tungsten sulfide, WS₂ is reported. Spectroscopic, microscopic, and X‐ray studies indicate formation of flower like aggregated nanosized WO₃ plates of highly crystalline cubic phase via intermediate orthorhombic tungstite, WO_3.H₂O phase. The charge storage ability of WO₃ is extremely high (508 F g^?1 at current density of 1 A g^?1) at negative potential range compared to tungstite (194 F g^?1 at 1 A g^?1). Moreover, high (97%) capacity retention after 1000 cycles and capacitive charge storage nature of WO₃ electrode suggest its supremacy as a negative electrode of supercapacitors. The asymmetric supercapacitor, based on the WO₃ as a negative electrode and mildly reduced graphene oxide as a positive electrode, manifests high energy density of 218.3 mWhm^?2 at power density 1750 mWm^?2, and exceptionally high power density, 17 500 mW m^?2, with energy density of 121.5 mWh m^?2. Furthermore, the negative differential resistance (NDR) property of both WO₃ and WO₃.H₂O are reported for the first time and NDR is explained with density of state approach.