Band structure of silicon carbide nanotubes

Using the linear augmented cylindrical wave method in the muffin-tin approximation, we have calculated the band structure of (n, n) and (n, 0) silicon carbide nanotubes for n = 5–10. In the range n = 7–10, (n, n) nanotubes are semiconductors, and their band gap decreases steadily with increasing n: 0.28 eV at n = 7, 0.26 eV at n = 8, 0.19 eV at n = 9, and 0.11 eV at n = 10. Nanotubes with n = 5 and 6 are metallic. At n = 7–9, (n, 0) nanotubes are semiconductors, and their band gap increases steadily with n: 0.39 eV at n = 7, 0.46 eV at n = 8, and 0.62 eV at n = 9. Nanotubes with n = 5 and 6 have metallic conductivity according to our results.     

The sound velocity in liquid binary mixtures of <Emphasis Type="Italic">n</Emphasis>-alkanes

The method of direct measurement of the time of pulse transmission is used for investigating the sound velocity in liquid binary mixtures of n-alkanes, namely, n-hexane + n-hexadecane, n-octane + n-hexadecane, and n-decane + n-hexadecane in the range of temperatures from 298 to 433 K and pressures from 0.1 to 100.1 MPa. The maximal error of measurements is 0.1%. It is for the first time that experimental data for mixtures of n-octane + n-hexadecane and n-decane + n-hexadecane are obtained.     

Extended BCS-Bose Crossover

Applying the generalized Bose-Einstein condensation (GBEC) formalism, we extend the BCS-Bose crossover theory by explicitly including hole Cooper pairs (2hCPs). From this, follows a phase diagram with two pure phases, one with 2hCPs and the other with electron Cooper pairs (2eCPs), plus a mixed phase with arbitrary proportions of 2eCPs and 2hCPs. The special-case phase when there is perfect symmetry, i.e., with ideal 50-50 proportions between 2eCPs and 2hCPs, corresponds to the usual BCS-Bose crossover. Explicitly including 2hCPs yields an extended BCS-Bose crossover which predicts improved T _c /T _F values for some conventional superconductors (i.e., with electron-phonon dynamics) when compared with experiment. To do this, we employ the BCS dimensionless coupling constant λ _{B C S} via the BCS gap equation and compare with the Bogoliubov et al. upper limit λ _{B C S} ≤ 1/2. Another phase diagram presented exhibits experimental T _c /T _F values for some conventional superconductors for arbitrary proportions between 2eCPs and 2hCPs as function of Δn = n/n _f ? 1, where n is the electron concentration and n _f that of unbound electrons at T = 0. The extended crossover is compared with experimental T _c /T _F values as well as to the gap-to- T _c ratio.     

Thermal properties and phase diagrams of water–hydrocarbon systems

The phase equilibria of immiscible binary systems (water–n-hexane, water–n-pentane) are investigated using a constant-volume piezometer. The measurements were performed under normal conditions, based on P,V,T,x-data obtained in the temperature range of 300–680 K, pressures up to 60 MPa, and in a wide range of densities. Based on the experimental data, we constructed phase diagrams in the P–T and T–x coordinates and determined the Krichevskii parameters for the system of water–n-hexane near the critical point of the pure solvent.     

Thermodynamic properties of (TeO<Subscript>2</Subscript>)<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript>(MoO<Subscript>3</Subscript>)<Subscript>1–<Emphasis Type="Italic">n</Emphasis></Subscript> glasses

The thermal behavior of (TeO₂) _n (MoO₃)_1–n (n = 0.75, 0.85, 0.90) tellurite glasses has been studied by differential scanning calorimetry in the range from T = 300 to T = 850 K and heat capacity has been measured in the temperature range. The thermodynamic characteristics of the devitrification process and glassy state have been determined. The experimental data obtained have been used to evaluate the standard thermodynamic functions of the system in glassy and supercooled liquid states: heat capacity C _p °(T), enthalpy H°(T)–H°(320), entropy S°(T)–S°(320), and Gibbs function G°(T)–G°(320) in the temperature range 320–630 K. The composition dependences of the glass transition temperature and thermodynamic functions for the glasses have been obtained. The thermal and thermodynamic properties of the tellurite glasses have been compared to those of previously studied (TeO₂) _n (WO₃)_1–n and (TeO₂) _n (ZnO)_1–n glasses.     

Subnanosecond impact-ionization switching of silicon structures without <Emphasis Type="Italic">p</Emphasis>–<Emphasis Type="Italic">n</Emphasis> junctions

It is shown that an application of a fast-rising high-voltage pulse to an n ⁺–n–n ⁺ silicon structure leads to subnanosecond avalanche breakdown, generation of electron–hole plasma throughout the entire structure, and structure switching to the conducting state in a time of about 100 ps. The predicted effect is similar to the delayed avalanche breakdown of reverse-biased p ⁺–n–n ⁺ diode structures; however, it is implemented in a structure without p–n junctions.     

On VLSI interconnect optimization and linear ordering problem

Some well-known VLSI interconnect optimizations problems for timing, power and cross-coupling noise immunity share a property that enables mapping them into a specialized Linear Ordering Problem (LOP). Unlike the general LOP problem which is NP-complete, this paper proves that the specialized one has a closed-form solution. Let f(x,y):?²→? be symmetric, non-negative, defined for x≥0 and y≥0, and let f(x,y) be twice differentiable, satisfying ? ² f(x,y)/?x?y<0. Let π be a permutation of {1,…,n}. The specialized LOP comprises n objects, each associated with a real value parameter r _i , 1≤i≤n, and a cost f(r _i ,r _j ) associated to any two objects if |π(i)?π(j)|=1,1≤i,j≤n, and f(r _i ,r _j )=0 otherwise. We show that the permutation π which minimizes \(\sum_{i= 1}^{n - 1} f( r_{\pi^{ - 1}( i )},r_{\pi^{ - 1}( i + 1 )} )\), called “symmetric hill”, is determined upfront by the relations between the parameter values r _i .     

Electrochemical etching of <Emphasis Type="Italic">p–n</Emphasis>-GaN/AlGaN photoelectrodes

Specific features of etching of GaN/AlGaN p–n structures in a KOH-based electrolyte have been studied. It was found that the corrosion process first passes across p layers through vertical channels associated with threading structural defects. Then, the corrosion process occurs in the lateral direction along n layers of the structure, with local hollows and voids thereby formed. The lateral etching is due to the presence of positive piezoelectric charges at boundaries of n-AlGaN and n-GaN layers and positively charged ionized donors in the space-charge region of the p–n junction.     

Inference with progressively censored <Emphasis Type="Italic">k</Emphasis>-out-of-<Emphasis Type="Italic">n</Emphasis> system lifetime data

A system with n independent components which works if and only if a least k of its n components work is called a k-out-of-n system. For exponentially distributed component lifetimes, we obtain point and interval estimators for the scale parameter of the component lifetime distribution of a k-out-of-n system when the system failure time is observed only. In particular, we prove that the maximum likelihood estimator (MLE) of the scale parameter based on progressively Type-II censored system lifetimes is unique. Further, we propose a fixed-point iteration procedure to compute the MLE for k-out-of-n systems data. In addition, we illustrate that the Newton–Raphson method does not converge for any initial value. Finally, exact confidence intervals for the scale parameter are constructed based on progressively Type-II censored system lifetimes.     

Surface Effects on the Dynamic Behavior of Vortices in Type II Superconducting Strips with Periodic and Conformal Pinning Arrays

Using molecular dynamics techniques, we simulate the vortex behavior in a type II superconducting strip in the presence of triangular and two types of conformal pinning arrays, one with a pinning gradient perpendicular to the driving force (C1) and the other parallel (C2), at zero temperature. A transport force is applied in the infinite direction of the strip, and the magnetic field is increased until the rate between the density of vortices (n _v ) and pinning (n _p ) reaches n _v /n _p =?1.5. Our results show a monotonic increase, by steps, of the vortex density with the applied magnetic field. Besides, each pinning lattice presents a different vortex penetration delay. For the triangular pinning array, different than the case of infinite films, here the system exhibits only one pronounced depinning force peak at n _v /n _p =?1. However, the depinning force peak is present for only one value of field, in the range of fields where n _v /n _p =?1 is stable. For the case of conformal pinning arrays, in analogy to what is observed in infinite films, no commensurability depinning force peaks were found. In the present case, the C1 array is more efficient at low fields, all arrays are equivalent in the intermediate fields, and the C2 array is more efficient for high fields. We also show that for the C1 array at high fields, vortices depin following the conformal arches, from the edge to the center. For the C2 array, the depinning force is higher when compared to that of C1, because this particular conformal structure prevents the formation of easy vortex flow channels.     

The Normal Flame Velocity and Analysis of the Effect of the System Parameters on This Velocity

A process chart of flame combustion of gases is suggested, and the region of existence of the normal (or standard) burning velocity U _n is given. The results of analysis of numerous experimental data are used to determine the impact made on U _n by parameters such as pressure, flame temperature, chemical composition of the mixture, and preheating of the mixture. Generalizing dependences of the normal burning velocity U _n on the adiabatic combustion temperature T _a and on the preheating temperature T₀ are obtained for a wide range of combustible hydrocarbon gases.     

Development of Σ3<Superscript><Emphasis Type="Italic">n</Emphasis></Superscript> CSL boundaries in austenitic stainless steels subjected to large strain deformation and annealing

The development of annealing twins was studied in chromium–nickel austenitic stainless steels subjected to cold or warm working. The annealing behavior can be characterized by an austenite reversal, recrystallization, and grain growth, depending on the deformation microstructures. The grain coarsening during recrystallization followed by a grain growth was accompanied by the development of twin-related Σ3 ⁿ CSL boundaries. The fraction of Σ3 ⁿ CSL boundaries and their density are defined by a unique parameter that is a relative change in the grain size, i.e., a ratio of the annealed grain size to that one evolved by preceding plastic working (D/D ₀). The fraction of Σ3 ⁿ CSL boundaries rapidly increased at early stage of recrystallization and grain growth while the ratio of D/D ₀ attained 5. Then, the rate of increase in the fraction of Σ3 ⁿ CSL boundaries slowed down significantly during further grain coarsening. On the other hand, the density of Σ3 ⁿ CSL boundaries increased to its maximum at a ratio of D/D ₀ about 2.5 followed by a gradual decrease during subsequent grain growth.     

Hybrid Josephson Junctions with Iron-based and Conventional Superconductor Electrodes

We investigate the iron-based superconductor Ba(Fe _1?x Co _x ) ₂As ₂ (Ba-122) regarding its superconducting properties and possible applications. Therefore, Ba-122 thin films are used as base electrode to prepare different kinds of hybrid Josephson junctions with a counter electrode of the conventional superconductor Pb. Additionally, we use both c-axis and a b-plane transport geometries and different kinds of barriers like interface-engineered surfaces, sputtered titanium oxide and gold layers. Temperature dependent I– V characteristics as well as magnetic field dependence and microwave response of the junctions are shown. The examined I– V characteristics and I _c R _n– T behaviours of each junction type are compared and described according to the electrical behaviour of the respective normal conducting or insulating barrier. While the I _c R _n product of the interface-engineered barrier junction was 12 μV and the planar junction with Au barrier showed 18 μV, we could increase the I _c R _n to 90 μV for planar TiO _x barrier junctions.     

Study of Critical Current and <Emphasis Type="Italic">n</Emphasis>-Values of 2G HTS Tapes: Their Magnetic Field-Angular Dependence

Since many applications of YBCO tapes operate in external magnetic fields, it is necessary to investigate the magneto-angular dependence of critical current and n-values in coated conductors. In this paper, five commercial YBCO tapes with different microstructures produced by three different manufacturers are chosen. The selected samples have a width of 2.0, 4.0, 4.8, 6.0 or 12 mm, with copper, brass or stainless steel laminations. The critical current density dependence J_c(B, θ) and n-values characteristics n(B, θ) of the tapes are comprehensively measured under various magnetic fields and orientations. Afterwards, the obtained experimental data sets are successfully fitted using a novel multi-objective model which considers the material anisotropy. By using this approach, a fitting function I_c(B, θ) can always be obtained to accurately describe the experimental data, regardless of the fabrication and width differences of the superconducting tapes. Moreover, our experiment shows that when subject to different external magnetic fields, the angular dependence of n-values characteristics is directly correlated with the corresponding critical current profiles. Our results are helpful to predict the critical current of electromagnetically interacting 2G HTS wires, thereby improving the design and performance of the devices made from YBCO tapes.     

The Electronic Structure of the Cs/<Emphasis Type="Italic">n</Emphasis>-GaN(0001) Nano-Interface

Electronic structures of the n-GaN(0001) surface and Cs/n-GaN(0001) interface with submonolayer Cs coverages were studied for the first time in situ by the photoelectron spectroscopy (PES) method. The spectra of photoemission from the valence band, surface electron states, and core levels (Ga 3d, Cs 4d, Cs 5p) under synchrotron excitation were measured in a range of photon energies within 50–150 eV. Evolution of the spectrum of surface states near the valence-band maximum was revealed by PES during the adsorption of Cs atoms. A metallic character of the Cs/n-GaN(0001) nano-interface is demonstrated.     

Superconductor-Semiconductor Metamaterial Photonic Crystals

We constructed theoretically one-dimensional photonic crystal (1DPC) by using a semiconductor metamaterial in the near-infrared range(NIR) which is composed of Al-doped Z n O(A Z O) and Z n O. The construction of this photonic crystal (PC) is based on a high-temperature superconductor material with the semiconductor metamaterial as constituent layers for this PC. The electromagnetic interactions with this periodic structure are investigated using the transfer matrix method (TMM) in the NIR range. The investigation shows that the reflectance spectra are depending on some parameters of the periodic structure such as the thicknesses of the constituent layers, temperature, and the angle of incidence.     

Effect of methyltrimethoxysilane hydrolysis and condensation conditions on the properties of thin polymethylsilsesquioxane films

We have studied the influence of methyltrimethoxysilane hydrolysis and condensation conditions in aprotic solvents on the formation, composition, and properties of thin polymethylsilsesquioxane films. The condensation of silanol groups and the structuring of the silicon–oxygen skeleton at different heat-treatment temperatures have been investigated by IR spectroscopy. The dielectric permittivity k and refractive index n of the films have been determined as functions of annealing temperature t_a: at t_a = 430°C, k = 2.75 and n = 1.38.     

Correlation between the electrical and luminescent properties of high-purity gallium arsenide

Epitaxial n-GaAs layers with a background impurity concentration of N_D-N_A<10¹⁵ cm^?3, grown by chloride vapor phase epitaxy in an open system, exhibit correlation between the electrical properties and the long persistence of the edge photoluminescence lines D⁰x and D⁰h related to the hole trapping centers. An increase in the concentration of such trapping centers in n-GaAs leads to a decrease in the mobility of free charge carriers.     

Long-wavelength photodiodes based on <Emphasis Type="Italic">n</Emphasis>-GaSb/<Emphasis Type="Italic">n</Emphasis>-GaInAsSb/<Emphasis Type="Italic">p</Emphasis>-AlGaAsSb heterostructures

Photodiodes sensitive in the wavelength ranges 1–2.5 μm and 1–4.8 μm at room temperature have been created on the basis of n-GaSb/n-GaInAsSb/p-AlGaAsSb double-junction heterostructures of two types. The broadband photosensitivity of the diode structures of both types is indicative of the complete separation of photogenerated electron-hole pairs in the staggered n-p heterojunction (n-GaInAsSb/p-AlGaAsSb). The noise characteristics of photodetectors based on the proposed diode structures have been studied. Prospects of the use of these devices in thermophotovoltaic cells for low-temperature radiation sources are considered.     

4<Emphasis Type="Italic">H</Emphasis>-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers

High-voltage (1600 V) diodes based on epitaxial 4H-SiC p⁺⁺–p⁺–n₀–n⁺ structures are tested as fast current breakers included in a special pulsed circuit. The measured current-breakdown time is about 150 ps. This is a record short time for high-voltage (above 1000 V) silicon-carbide diode breakers. The saturated hole-drift velocity in 4H-SiC of p type is experimentally estimated for the first time: v _sp = 3 × 10⁶ cm/s.