调频网印品图像的微观色彩预测模型研究

在考虑网点扩大的情况下,研究了基于Murray-Davies方程的调频网半色调印品色彩预测模型。分析了调频网印品图像的微观结构和特征,建立了理想状态下调频网的反射率模型;考虑到光在纸基中的散射,采用光散射概率理论构建了墨点与墨点间的局部反射与透射关系;最后,建立了基于扩展的Murray-Davies方程的调频网半色调图像的微观色彩预测模型。     

一种基于阶调划分的网点重组型复合半色调算法

目的 针对调幅和调频加网在本质上的不同, 过渡区域容易出现网点衔接不平滑和不均匀, 造成明显跳变, 影响印刷品质量的问题, 提出一种基于阶调划分的网点重组型复合半色调算法。方法 在分析复合半色调阶调划分思想的基础上, 提出了一种过渡区域网点重组方法, 通过建立过渡区域平滑衔接模型, 构建了网点重组算法模型和分配方案, 列举了几个典型实例, 并对算法模型的效果进行了定量分析。结果 生成的过渡区域网点实现了调幅和调频等2类不同性质网点的平滑过渡, 提高了半色调图像的输出质量。 结论 提出的算法能够改善复合半色调图像的印刷质量, 消除过渡区域的视觉干扰, 是一种有效的半色调方法, 为网点生成方法提供了参考依据。     

基于网点结构的光学网点扩大特性研究

目的研究印刷品网点扩大中光学网点扩大特性,量化分析不同类型网点结构对光学网点扩大的影响差异,探讨光学网点扩大的一般规律。方法根据网点结构,提出周长对网点面积率敏感度的定义,以此分析光学网点扩大随网点结构特性的变化规律,图象栅格化处理器(RIP)输出多种网点结构,以不同网点胶印样张形式验证光学网点扩大规律。结果对于调幅网点,光学网点扩大大于机械网点扩大;对于调频网点,机械网点扩大大于光学网点扩大。同心圆网点是一种特殊网点结构,兼有调幅、调频光学扩大特性。结论光学网点扩大不可避免,光学网点扩大值与周长对面积率敏感度正相关,研究不同网点结构的光学扩大特性对印刷品质量控制有一定意义。     

基于油墨不同叠印的二阶调频网物理网点扩大的研究

建立了二阶调频网点构成的半色调图像光谱预测模型。考虑油墨在不同叠印条件下由于油墨铺展引起的物理网点扩大,采用Yule-Nielsen修正的光谱聂格伯尔模型对打印的二阶调频网点图像的光谱进行预测,然后计算色度值,并与测量值进行比较。实验结果表明,考虑油墨在不同叠印条件下的铺展的EYNSN模型预测的平均和最大色差分别为2.64和6.21,与未考虑油墨铺展的预测结果相比,预测精度有所提高。     

调频网点微观形态表征与应用研究

目的 调频网点的微观立体形态质量会对数码印刷品质量产生根本影响, 选择有效工具对调频网点立体形态进行准确还原。方法 借助明暗恢复算法 （SFS） 对不同数码样张的网点立体形态进行恢复,并基于此分析打样纸张纸面状况对于油墨吸收的影响。利用扫描电镜技术采集纸张纵向与平面信息,将其扫描结果与网点立体数据进行分析对比。结果 网点立体模型准确而直观地还原了单个调频网点及不同样张实地处的网点立体形态, 并且实地处网点质量与电镜分析的结果相互一致。结论 网点立体模型能真实地反映出喷墨过程中的网点传递特征, 电镜分析技术为科学评价样张质量提供了进一步的科学理论支持。调频网点微观形态特性分析为更好地研究网点微观结构与数码印刷品复制质量的相互关系提供了有效手段。     

一种基于散射理论的光学网点扩大算法

目的研究一种基于纸基光散射理论的网目调光学网点扩大算法。方法应用点扩散函数和概率方法,分析网目调印刷品中光的散射和渗透效应,推导出印刷品上空白部分、网点部分反射率和网目调印刷品反射率的精确表达式,在此基础上,分析了网点光学扩大与印刷品网点面积率、墨层光谱透射率以及纸基光谱反射率的依赖关系,建立了一种新的光学网点扩大算法模型。将经典的光谱Murray-Davis模型与该算法修正后的光谱Murray-Davis模型分别预测的光谱反射率,与印刷品实际测量的光谱反射率作对比验证实验。结果提出算法修正后的光谱Murray-Davis模型与实测光谱反射率更加接近,色差ΔE2000最高为1.53、最低为0.89,而人眼对ΔE20002的颜色在视觉上近似相等。结论采用提出的模型修正经典的Murray-Davis公式,进而预测光谱反射率,达到了很好的效果,具有更高的精度。     

基于调幅加网的微观防伪网点算法研究

目的基于阈值矩阵的加网方法设计出具有微观结构防伪功能的艺术网点,并对潜在的应用价值进行探讨。方法研究分析最小阈值矩阵加网的算法及原理,对阈值矩阵进行改进,使其产生微观的艺术效果。结果可以实现在不同角度上微观艺术网点设计,计算机完成加网实验,在不同色版上都得到了具有微观艺术形貌的加网图像,而且四色重组后的印刷图像达到了理想的半色调化效果。结论基于最小阈值矩阵设计的微观艺术网点可以实现调幅加网在网点层次的防伪,建立了具有微观艺术效果的网点系统,并且与光栅防伪等其他的防伪技术相结合。     

基于网点结构形态的印刷色彩再现研究

以调幅网点和同心圆网点作为主要研究对象,分析了网点结构对网点呈色特性的影响,应用Clapper-Yule颜色预测模型和Lambert-Beer法则,解释了同心圆网点高饱和度色彩再现的机理,并通过实验对理论分析进行了验证。结果表明:网点内部结构的差异会影响色彩再现质量,同心圆网点环形内部结构是影响其印刷呈色的重要因素;同心圆网点的色彩表现力优于调幅网点,特别是在饱和度再现上优势明显。     

荧光纸基的双面彩色半色调印刷品Clapper-Yule正面反射率模型

目的研究荧光纸基对双面彩色半色调印刷品反射率的影响。方法假设油墨与纸张的折射率相似,考虑到荧光部分可以吸收光线中不可见的紫外光,经过能量转换散发出可见光从而影响总反射率,将这部分影响等效于正、反面油墨的透射率,以及纸张内部向正、反面反射率的改变;考虑光学网点扩大因子,利用Clapper-Yule分程理论进行分析;通过数值模拟,对新、旧模型进行比较,验证新模型的合理性和准确性。结果建立了荧光纸基的双面彩色半色调印刷品Clapper-Yule正面反射率模型。结论色彩预测Clapper-Yule反射率模型必须考虑荧光纸基的影响。     

印刷网点微观图像阈值分割算法研究

目的 通过阈值处理方法, 准确获取网点微观图像的特征参数, 将其与仪器测量值相结合, 综合评价印刷品复制质量。方法 提出一种基于高斯函数模型拟合网点图像灰度直方图数据的阈值分割算法, 寻找网点类图像最佳分割阈值, 对图像进行二值化处理, 得到准确的网点参数。结果 得到的印刷品网点面积率在全阶调范围内更接近于测量值, 分割效果明显优于传统的阈值分割算法。结论 提出的高斯拟合阈值分割算法更有利于提取网点类图像的微观参数, 精度高, 稳定性好,为获取准确的网点图像微观参数提供了理论与实践参考。     

Aqueous synthesis and bio-imaging application of highly luminescent and low cytotoxicity Mn-doped ZnSe nanocrystals

In this paper, Mn²⁺-doped ZnSe quantum dots (Mn:ZnSe d-dots) are synthesized successfully by a nucleation-doping method in aqueous solution with 3-Mercaptopropionic acid as the stabilizer and sodium selenite as the Se source for the first time in contrast to the use of oxygen-sensitive NaHSe or H₂Se as Se source. The obtained quantum dots performed strong band-edge luminescence, narrow size distribution and weak trap emission without post-treatments. The results of transmission electron microscopy and X-ray diffraction demonstrated the small particle size (3-4 nm), good monodispersity and ZnSe(S) alloyed structure of as-prepared quantum dots. Finally, the biological application of luminescent Mn²⁺-doped ZnSe nanocrystals to PK 15 cell imaging was also illustrated, which showed excellent biocompatibility and low cytotoxicity, implying their potential as a new generation of fluorescent labels for biological assays, tissues, and even in vivo investigations.     

Synthesis and photocatalytic performance of novel CdS quantum dots sensitized Bi2WO6 photocatalysts

Novel quantum dots sensitized CdS-Bi₂WO₆ composite photocatalysts were synthesized to improve the visible-light-driven photocatalytic performance. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) UV-vis diffuse reflectance spectra (DRS). The photocatalytic activities of QDs sensitized CdS-Bi₂WO₆ samples were investigated based on the decomposition of methyl orange under visible light irradiation (λ > 420 nm). The DRS results revealed that CdS-Bi₂WO₆ samples have a red shift and stronger absorption in the visible light region. After being sensitized by quantum dots CdS, the Bi₂WO₆ samples showed the high efficiency for the degradation of methyl orange. This study may provide an approach to treatment of organic pollutants by using visible light.     

Influences of silicon doping in quantum dot layers on optical characteristics of InAs/GaAs quantum dot infrared photodetector

We have investigated the effects of silicon doping concentration within thirty-period self-assembled quantum dot (QD) layers on quantum dot infrared photodetectors (QDIPs). The lens-shaped quantum dots with the dot density of 1 × 10¹¹ cm^− 2 were observed by atomic force microscope (AFM). From the high ratio of photoluminescence (PL) peak intensities from dot layer to that from wetting layer, we have concluded that high dot density caused the short diffusion length for carriers to be easily captured by QDs. Moreover, the Si-doped samples exhibited the multi-state transitions within the quantum dots, which were different to the single level transition of undoped sample. Besides, the dominant PL peaks of Si-doped samples were red-shifted by about 25 meV compared to that of the undoped sample. It should result from the dopant-induced lowest transition state and therefore, the energy difference should be equal to the binding energy of Si in InAs QDs.     

Growth and photovoltaic performance of SnS quantum dots

Tin sulphide (SnS) quantum dots of size ranging from 2.4 to 14.4 nm are prepared by chemical precipitation method in aqueous media. Growth of the SnS particles is monitored by controlling the deposition time. Both XRD and SAED patterns confirm that the particles possess orthorhombic structure. The uncapped SnS particles showed secondary phases like Sn₂S₃ and SnS₂ which is visible in the SAED pattern. From the electrochemical characterization, HOMO–LUMO levels of both TiO₂ and SnS are determined and the band alignment is found to be favorable for electron transfer from SnS to TiO₂. Moreover, the HOMO–LUMO levels varied for different particle sizes. Solar cell is fabricated by sensitizing porous TiO₂ thin film with SnS QDs. Cell structure is characterized with and without buffer layer between FTO and TiO₂. Without the buffer layer, cell showed an open circuit voltage (V_oc) of 504 mV and short circuit current density (J_sc) of 2.3 mA/cm² under AM1.5 condition. The low fill factor of this structure (15%) is seen to be increased drastically to 51%, on the incorporation of the buffer layer. The cell characteristics are analyzed using two different size quantum dots.     

The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QD

Self assembled molecular beam epitaxy grown GaN quantum dots stacked with AlN spacers were implanted with Eu ions. The as-implanted samples were further submitted to thermal annealing treatments in nitrogen, between 1000 °C and 1200 °C. Eu³⁺ luminescence was observed in all samples with the most intense emission assigned to the ⁵D₀ → ⁷F₂ transition in the red spectral region. The preferential excitation paths of Eu³⁺ luminescence is explored using photoluminescence excitation measurements which allow us to identify the feeding mechanisms for the Eu³⁺ ions inside the GaN quantum dots and AlN host. Optically active Eu centres in both GaN QD and AlN layers could be identified. For low implantation fluence the Eu centres inside GaN QD are dominant while for high fluences the emission arises from Eu in the AlN layers. The annealing temperature, on the other hand, does not cause any change in the local environment of the Eu-ions.     

Incorporation of gene therapy vector in chitosan stabilized Mn-doped ZnS quantum dot

Chitosan stabilized and water soluble (pH ≤ 6.5) ZnS:Mn²⁺ quantum dots (QDs) of ca. 3.6 nm having a strong orange fluorescence have been synthesized in an environment friendly method. Binding of plasmid DNA containing the bifunctional cytosine deaminase-uracilphosphoribosyl transferase (pCD-UPRT) gene with therapeutic importance in suicide gene therapy has been investigated and shown to follow the Langmuir reversible adsorption model. The biocompatibility of the composite on HT29 cells was confirmed by the viability assay. The chitosan stabilized ZnS:Mn²⁺ QDs synthesized in the present study could be a promising alternative to conventional organic fluorophore-tagged gene delivery systems for real-time monitoring in gene therapy applications.     

石墨烯量子点/CdS/CdSe共敏化太阳能电池

以三维锐钛矿TiO₂微球为上层光散射层材料, 以商业纳米TiO₂为下层连接材料, 采用刮刀法制备了一种新颖的双层TiO₂薄膜, 并应用于量子点敏化太阳能电池(QDSSC)。其中, 石墨烯量子点(GQDs)采用滴液法引入, CdS/CdSe量子点采用连续离子层吸附法(SILAR)制备。采用场发射扫描电镜、透射电镜、X射线衍射、紫外-可见漫反射光谱及荧光光谱对样品进行表征。实验还制备了CdS/CdSe量子点敏化及石墨烯量子点/CdS/CdSe共敏化太阳能电池, 并研究了石墨烯量子点及CdS不同敏化周期及对电池性能影响。研究结果表明, 石墨烯量子点及CdS不同敏化周期对薄膜的光学性质、电子传输及载流子复合均有较大影响。优选条件下, TiO₂/QGDs/CdS(4)/CdSe电池的光电转换效率为1.24%, 光电流密度为9.47 mA/cm², 显著高于TiO₂/CdS(4)/CdSe电池的这些参数(0.59%与6.22 mA/cm²)。这主要是由于TiO₂表层吸附石墨烯量子点后增强了电子的传输, 减少了载流子的复合。