热处理温度对Cu-In薄膜微观结构的影响

采用电镀工艺制备了CIS太阳能电池的Cu-In预制薄膜,通过分析不同温度热处理后材料结构的变化,研究了Cu-In预制层薄膜的相变规律及其表面特征.实验结果表明:在433K温度下进行热处理后,Cu-In薄膜由单质In及少量Cu11In9构成,此时单质In熔化,凝固后其表面In颗粒长大;当热处理温度高于577K时,在表面富In区发生固液转变,薄膜表面更加致密.随着Cu和In原子相互扩散加剧,Cu11In9最终完全转变为Cu16In9.     

Oxidation of single-phase Pb-In alloys

The oxidation of several single-phase Pb-In alloys has been studied in air at room temperature using AES (Auger electron spectroscopy) combined with sputter-depth profiling. Alloy samples with indium composition between 3 and 64 at.% In, which were prepared using a microtome, were oxidized in air. The oxidation of alloys with low In contents was found to be the same as that of Pb-2.9 at.% Sn.¹ Increasing the bulk composition of In increased the ratio of oxidized In to oxidized Pb in the oxide mixture, although Pb oxide was observed even on the surface of the oxide for samples up to 64 at.% In. The oxidation behavior of Pb-In alloys can be explained in terms of preferential oxidation of In due to its much greater affinity for oxygen than Pb.     

Void formation and alloy enrichment during anodizing of aluminium alloys containing cadmium, indium and tin

The formation of voids at the alloy/anodic film interface and the enrichments of alloying elements in a thin alloy layer immediately beneath the anodic film as a consequence of anodizing have been examined for Al-0.28 at.% In alloy and Al-0.5 at.% Cu alloys containing 0.11 at.% Cd, 0.07 at.% In or 0.27 at.% Sn. Fine voids are formed for the indium- and tin-containing alloys for the selected conditions of anodizing, which is suggested to be associated with the relatively low Pilling–Bedworth ratios of the alloying element oxides incorporated into the anodic films. Thus, the formation of voids is dependent upon oxidation of the alloying element. Consequently, no voids were resolved for the cadmium-containing alloy for which limited or no oxidation of cadmium occurred. The enrichment of the binary alloy was equivalent to 3.5 at.% In, with enrichments of the ternary alloys to the ranges 11–16 at.% Cu and 2–7 at.% Cd, In or Sn respectively, for an assumed 2 nm thick enriched layer.     

HYDROGEN IN Pd-In ALLOYS

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掺杂Al的(In2Te3)0.09(SnTe)0.91化合物热电性能

以等摩尔分数的Al元素替代(In2Te3)0.09(SnTe)0.91中的In元素,利用放电等离子烧结技术、采用相同的工艺制备了(In2Te3)0.09(SnTe)0.91和(In1.9Al0.1Te3)0.09(SnTe)0.912种化合物,并对两者的微观结构和热电性能进行对比。结果表明,掺杂Al元素后,材料的Seebeck系数降低很小,电导率为1×1052.3×1051·m1,是掺杂前的2.43倍,晶格热导率L值大幅度降低。在693K时,掺杂Al后的化合物ZT值达到最大值0.4,是同温度下掺杂前ZT值的2倍。     

The effect of compression and tension on shear-band structure and nanocrystallization in amorphous Al90Fe5Gd5: a high-resolution transmission electron microscopy study

Using both conventional and high-resolution transmission electron microscopy (HRTEM), the effect of bending at room temperature on the microstructure of amorphous Al₉₀Fe₅Gd₅ was investigated. In the compressive region, nanocrystallites formed at shear bands, along small cracks and at the fracture surface; in the tensile region, nanocrystallites were observed only at the fracture surface. Combining HRTEM with frequency filtering, low-density, nanoscale defects at shear bands were imaged. In the compressive region, both the shear bands and the undeformed matrix contain few defects. In the tensile region, there is a uniform distribution of defects within the shear bands. The preferential precipitation of nanocrystallites in the compressive region is attributed to a kinetic effect due to the uniformly distributed free volume in the shear bands. In contrast, the formation of the nanocrystallites at the fracture surfaces is likely due to adiabatic heating induced by fracture.     

Effect of indium on the microstructure of the interface between Sn3.13Ag0.74CuIn solder and Cu substrate

Influence of indium in Sn3.13Ag0.74Cu solder containing 4, 15, 30, 50 and 75 at.% In on the microstructure at the solder/Cu interface after wetting at 523 K for 1800 s was studied. The scanning electron microscopy (SEM) combined with energy-dispersive X-ray spectroscopy (EDX), standard and spatially resolved X-ray diffraction (XRD) techniques were used to determine the phases present at the solder/Cu interface. It was found that for In concentration up to 30 at.% the interface is formed by Cu₆Sn₅ phase. For higher In content (50 and 75 at.% In) interface consists of copper rich Cu₄₁Sn₁₁ phase.     

Oxidation kinetics of a Pb-64 at.% in single-phase alloy

The solid-state oxidation kinetics of a Pb-64 at. % In (50 wt. %) single-phase alloy were studied from room temperature to 150°C using an AES (Auger Electron Spectroscopy) depth profiling technique. The general oxidation behavior of this alloy is different from that of a Pb-3 at.% In alloy but similar to that of a Pb-30 at.% In alloy. The oxide formed on this alloy is almost pure In oxide (In₂O₃) with the possible existence of some In suboxide near the oxide/alloy interface. At room temperature, oxidation of the alloy follows a direct logarithmic law, and the results can be described by the model proposed previously by Zhang, Chang, and Marcotte. At temperatures higher than 75° C, rapid oxidation occurred initially followed by a slower parabolic oxidation at longer time. These data were described quantitatively by the model which assumes the existence of short-circuit diffusion in addition to lattice diffusion in the oxide as proposed by Smeltzer, Haering, and Kirkaldy. The effects of alloy composition on the oxidation kinetics of (Pb, In) alloy are also examined by comparing the data for Pb-3, 30, and 64 at. % In alloys.     

Giant magnetoresistance of Fe/In/Fe trilayers

Giant magnetoresistance (GMR) and magnetic properties in Fe/In/Fe trilayers with various In thickness were studied. Negative GMR 0.38% was observed in sample with In thickness 1.05 nm at 20 K. The magnitudes of GMR were found to oscillate with a period about 1.1 nm when varying the thickness of In layers. The GMR of trilayers was near constant at low temperature and decreased linearly with increasing temperature at high temperature.     

Comparisons of high temperature oxidation behavior between reactive-sintered and melted Ti-45at.%Al-1.6at.%Mn intermetallics

In order to investigate high temperature oxidation behavior, isothermal oxidation experiments for Ti-45at.%Al-1.6at.%Mn intermetallics prepared by both reactive sintering and melting were carried out in both oxygen and air environments at temperatures of 900, 1000 and 1100°C. In the oxygen environment, reactive sintered Ti-45at.%Al-1.6at.%Mn was found to have excellent oxidation resistance due to the formation of a continuous A1₂O₃ layer at temperatures up to 1100°C; however, when melted it showed very poor oxidation resistance at and above 1000°C. Weight gains of the melted specimen after 12 hours, especially at the temperature of 1000°C and 1100°C, were nearly 12 times that of the reactive sintered one. In air, the reactive-sintered intermetallics showed a poorer oxidation resistance man did that in the oxygen environment. Especially, the weight gains in air were 6 times larger than the weight gains in oxygen when oxidized at 1100°C for 12 hours.     

HYDRIDING INFLUENCE OF INDIUM ON Pd-In ALLOYS

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铟在碱性溶液中的阳极钝化过程

用线性电位扫描、循环伏安、计时电量及电位衰减等电化学方法，研究了铟在3mol／L KOH溶液中的阳极钝化过程．铟在强碱性溶液中表现为一种活化一钝化金属．在活化区铟发生两步氧化，首先一电子氧化形成[InOH]ad，接着[InOH]ad二电子氧化成[In(OH)3]ad，较低电位下前者较快后者较慢，表现为一电子反应；较高电位下两者均较快，表现为三电子反应，两者均受扩散步骤控制．单层[In(OH)3]ad形成后使铟进入钝化区，[In(OH)3]ad不稳定，在碱液中可以溶解和转变为In2O3．在钝化区，铟直接氧化成三价铟，较高电位下形成稳定的In2O3，较低电位下形成非化学计量的三价铟氧化物，其稳定性介于[In(OH)3]ad和In2O3之间。     

In对Pd氢化的影响

本文使用超微高压天平装置，在压力为０．００１－３．５ＭＰａ，温度为３８１－６２１Ｋ范围内测得纯Ｐｄ和４种成分Ｐｄ－Ｉｎ合金的吸放氢等温线。结果表明：价电子浓度低于０．５，晶格膨胀占主导作用，氢的溶解度随Ｉｎ含量增加而升高；价电子浓度高于０．５，费米能升高占主导作用，氢溶解度随Ｉｎ含量增加而降低。这同对Ｐｄ－Ａｇ，Ｐｄ－Ｓｎ合金中Ａｇ，Ｓｎ的作用解释相似，即它们在合金中对氢的溶解度确有上述两种相反的影响。     

Sauerstoffaufnahme von Vanadium,Niob und Tantal bei hohen Temperaturen und niedrigen Drücken

Oxygen absorption by vanadium, niobium and tantalum at high temperatures and low pressures A general view is presented of the oxygen absorption by vanadium, niobium and tantalum at temperatures above 1000°C and at oxygen partial pressures below 10^?2 torr. In this context the kinetics of oxygen dissolution is given a detailed treatment while oxidation is dealt with but shortly. The review includes a theoretical treatment of oxygen dissolution. In addition quantitative relations are given which enable the oxygen dissolution in vanadium, niobium and tantalum to be estimated at given conditions of temperature and oxygen pressure.     

Structure of Quenched Ti–Ru Alloys

Quenched titanium–ruthenium alloys containing 0.25–4 at % ruthenium have been studied using X-ray diffraction analysis, optical metallography, transmission electron microscopy, and microhardness measurements. It has been found that, during the quenching of the alloys containing 0.25, 0.5, and 1 at % ruthenium, a polymorphic β → α transformation occurs with the formation of a two-phase (α + β) structure. In Ti–1.5 at % Ru and Ti–2 at % Ru alloys, a martensitic β → α″ transformation occurs. The quenched Ti–3 at % Ru alloy has a β + ω structure. The complete stabilization of the β phase takes place in the alloy with 4 at % ruthenium. In the electron-diffraction patterns of alloy containing 4 at % ruthenium, diffuse scattering that indicates the formation of ω-phase-related displacements in the locations of atoms has been observed.     

冷却速度对铝合金铸件气孔形成的影响

为研究冷却速度对铝合金铸件气孔形成的影响,分别采用潮模砂型、树脂砂型和金属型浇注壁厚10mm、25mm、40mm的铸件,观察截取试样的气孔分布。试验结果表明,冷却速度较慢的铸件气孔数量较多,形状不规则、大小不一,且气孔分散程度大;冷却速度较快的铸件气孔数量少,形状为小圆形且集中分布。潮模砂型铸件因砂型中的水分增加了铝液中的含氢量,铸件中的气孔数量较多;树脂砂型铸件因其凝固时间长,形成的氢气在铝液中溢出一部分,减少了铸件中的气孔量;金属型厚壁铸件由于成分过冷严重,铸件中心部位的气孔数量比边缘部位多。     

温度对Au-9Ni合金电刷丝力学性能的影响研究

测定了Au-9Ni合金在不同热处理状态下的预变形刷丝在高低温循环处理过程中的接触压力变化,研究了不同温度下刷丝蠕变速率变化。结果表明,刷丝成型后在330~350℃温度区间内进行时间为30 min的退火能够消除成型加工造成的应力集中;在-50~150℃的温度循环过程中,电刷的压力随循环次数的增加而减小,约1000个循环后进入稳定期;模拟结果表明,112000次循环后压力降低约20%;在恒温恒压环境中,150℃刷丝基本不产生变形,250℃刷丝慢慢变形但幅度较小,350℃蠕变率极高。     

扩散连接接头金属间化合物新相的形成机理

扩散连接接头中界面区脆性金属间化合物相的出现往往会造成接头性能的恶化,因此研究并建立接头界面区金属间化合物相的生成和成长行为的数学模型对扩散连接过程有非常重要的理论及现实意义。本文根据扩散理论,指出界面处生成相的动力学驱动力限决于扩散偶中组元自身的特性,生成机的组元及比例应按原子扩散通量比优先生成,本文从动力学及热力学角度出发,提出了多组元扩散偶界面处的金属间化合物生成相原则：通量-能量原则;并以钛/镍/钢扩散接接头为例,证明钛/镍界面处金属间化合物相的生成规律为Ni/TiNi3/TiNi/Ti2Ni/Ti。提出,通量-能量能力相当的两种或多种金属间化合物有可能同时形核篚,接头界面处会形成混合的金属间化合物。     

CLS AND AES STUDIES OF OXYGEN ADSORPTION AND INITIAL OXIDATION ON CLEAN In SURFACE

<正> 近年来对Al的氧吸附和氧化已有大量研究,相比之下,对较重的三价金属In的氧吸附研究甚少.本文用CLS(特征能量损失谱)和AES(Auger电子谱)研究了氧在In表面的吸附及氧化.实验在ESCALAB-5型电子谱仪上进行.     

立方晶体结构的高熵合金在低温条件下力学行为的研究进展

近年来,立方晶体结构的高熵合金的在低温条件下(77K)的力学性能成为了研究热点。研究发现,由于一些立方晶体结构体系的高熵合金的层错能随着温度的降低而降低,比较室温条件下,其低温综合力学性能呈现提高的趋势,是一种很有希望的高性能低温结构材料。本文综述了近年来一些立方晶体结构的高熵合金在低温条件下的力学行为的研究进展,重点对高熵合金在低温环境下塑性变形过程中的强韧化机理进行了讨论,并给出了未来的发展方向。