基于单片机的LED汉字显示屏的设计

文中详细介绍了由STC89C52RC单片机、74HC154芯片、晶振电路、复位电路、驱动电路、16×16 LED点阵构成的LED汉字显示屏系统。设计采用STC89C52RC单片机为微控制器,74HC154为译码器、PNP型三极管8550构成行驱动电路,NPN型三极管8050构成列驱动电路,采用4个8x8LED显示器级联构成16×16的点阵汉字显示屏。软、硬件设计结果表明所设计的LED汉字显示屏可以实现汉字的滚动显示,且汉字清晰,无串扰,无重影     

Proteus在LED点阵滚动显示屏设计中的应用

介绍了LED点阵汉字滚动显示屏的系统硬件电路设计和软件设计过程和思路,对由8×8点阵LED构成的16×16点阵LED显示器件的汉字显示方式做了深入分析,并在先进的嵌入式系统仿真平台Proteus ISIS上进行了系统软、硬件协同仿真,显示了Proteus在单片机系统设计中的超群功能.     

基于FPGA控制的LED汉字滚动显示器设计

实现了基于FPGA硬件及VHDL语言设计的LED点阵汉字滚动显示,可通过按键选择,控制其滚动方式：左移或者右移及上移或者下移等。阐述了LED点阵显示汉字的原理,给出了点阵汉字滚动显示控制器的原理图、部分VHDL源程序及时序仿真图并进行了详细的分析,提出了系统扩展成实现16×16点阵汉字滚动的改动思路。     

基于Proteus的单片机汉字点阵显示电路设计

在嵌入式系统软硬件设计仿真平台Proteus的基础上设计了16×16 LED汉字点阵显示电路.硬件电路由AT89C51单片机控制器、LED显示屏行列驱动电路以及LED点阵显示屏3部分组成.通过汉字字模点阵数据批量生成软件来实现汉字点阵,采用汇编语言对单片机进行控制操作.完成了实物电路并在 Proteus软件的基础上对结果进行了仿真,得到了汉字点阵效果图.实验结果表明,在单片机显示领域的设计开发中Proteus软件具有重要的实用价值,可以大幅缩短开发周期,节约开发成本.     

基于单片机的LED汉字显示屏的设计与Proteus仿真

研究了基于AT89C51单片机16×16 LED汉字滚动显示屏的设计与运用Proteus软件的仿真实现。主要介绍了LED汉字显示屏的硬件电路、汇编程序设计与调试、Proteus软件仿真等方面的内容,本显示屏的设计具有体积小、硬件少、电路结构简单及容易实现等优点。能帮助广大电子爱好者了解汉字的点阵显示原理,认识单片机的基本结构、工作原理及应用方法,并提高单片机知识技术的运用能力。     

简易LED点阵汉字显示控制模块设计

LED控制模块在程序上完成了内码到区位码、区位码到字模的转换,给出了关键代码。硬件设计上由12块8×8LED点阵模块组成显示屏,控制器采用AT89S52微处理器,由P0口和P2口控制显示屏的行、3块4-16译码器74LS154控制显示屏的列,将字模扫描到LED显示屏,从而显示汉字。     

基于Android控制的LED点阵显示设计与实现

考虑传统的有线或无线控制的LED点阵显示屏需要在Windows计算机中进行操作控制,软件操作复杂,更新内容不及时,应用范围受限,为此提出一种基于Android控制的点阵显示屏控制策略。通过自建字库,可显示GB2312 80规定中16×16分辨率的所有汉字和非汉字符号,在智能手机中运行APP软件编辑显示内容,通过蓝牙通信方式传送到点阵显示屏控制器可即时显示,实现显示内容即时更新。以一个16×64的基本显示单元入手详细阐述软件编程思路,照此可扩展到任意显示分辨率尺寸,最后给出一个32×64的显示实例。     

基于单片机的16×64LED点阵显示屏的设计

介绍了基于单片机的16×64LED点阵显示屏的设计过程．给出了其硬件原理图和软件流程图。该系统利用PC机将汉字字符转换为点阵显示数据,并通过串行口送给单片机,再由单片机独立完成显示和控制。该系统具有设计简单、字符清晰、可靠性高等特点。     

基于AT89C52的LED点阵汉字显示屏设计

设计了一款基于AT89C52单片机的LED汉字显示屏,以74HC138译码器作为驱动部件以及16×16的点阵作为显示部件,采用C语言进行编程,代码结构简单且执行效率高。实物实验证明LED汉字显示屏以简单的电路结构及简洁的软件编程实现了LED动态汉字显示,成本低廉,操作方便并且实用性强。     

LED点阵书写显示屏的系统设计

介绍了一种AVR单片机控制的LED点阵书写显示屏。该系统以ATmega16单片机为控制器,16个8×8 LED点阵模块组成的32×32 LED点阵模块为显示屏,感光性能优良的光电三极管为完成信号采集功能的光笔,多片级联的锁存移位寄存器74HC595为点阵屏的驱动器,实现了点亮、划亮、反显、整屏擦除、笔画擦除、连写多字等书写显示功能。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.