共查询到19条相似文献,搜索用时 31 毫秒
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采用热敏电阻作为热源和敏感元件,在密闭腔中使气体产生自然对流,利用硬件电路和软件补偿技术将运动载体的姿态信号提取并进行处理。研制出测量范围为±30°、非线性度小于1%FS、分辩率小于0.01°、响应时间小于80 ms的动态气流式倾角传感器。 相似文献
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提出一种基于法布里—珀罗(Fabry Perot,F P)干涉的光纤倾角传感器,该传感器由单模光纤和毛细管组成。首先,分析光纤干涉原理和倾角传感原理;然后,制作封装光纤倾角传感器;最后,完成光纤F P传感器倾斜实验,通过对采集得到的数据分析得到传感器倾角的响应特性,并进行温度实验探究温度对传感器波长漂移的影响。实验结果表明:在0°~10°测量范围内,测量角度和反射波长呈线性关系,倾角灵敏度为02031nm/°,线性度为099707;在45~49℃温度范围内,温度灵敏度为4777nm/℃,线性度为099934。该传感器具有结构简单、成本低、灵敏度高等特点,具有广阔的应用前景。 相似文献
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本报告就20~22兆赫 VCX0在宽工作条件下(包括更换晶体单元以选择信道和温度不容许情况)所有中心频率容限达到±5×10~(-6)的情况评论石英晶体振荡器的电路特性。所叙述的晶体振荡器电路在保持主要频偏和线性性能下从0°到60℃的频温稳定性能比±4×10~(-6)好。设计对频温特性的最大影响为±1×10~(-6)的电路是采用这样的方法,即把对频率有一定影响的且与温度有关的元件数目减至最小以及采用把可预测的电路线性频温特性与晶体谐振频温特性的线性旋转相匹配的补偿方法。性能试验结果指出典型电路对频温特性的影响为±0.2×10~(-6)。本报告也讨论输入端和输出端的要求,这种要求应允许把 VCX0结合到现时的和将来的发射机设计中。 相似文献
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滞环电流控制的大功率LED恒流驱动芯片设计 总被引:4,自引:1,他引:3
设计了一款滞环电流控制的大功率LED恒流驱动芯片,其采用高边电流检测方案,通过内部电流检测电路对LED驱动电流进行滞环控制,从而获得恒定的平均电流。芯片采用9VBICMOS工艺流片,可输出350mA电流驱动1W的LED,也可输出750mA电流驱动3W的LED。在4.5~9V输入电压范围内,芯片输出驱动电流变化小于3.5%。在环境温度从25°C变化到100°C时,芯片输出驱动电流变化小于5%。由于滞环电流控制环路存在自稳定性,芯片无需补偿电路。 相似文献
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随钻测斜仪是现代定向钻井工程中重要的测量设备,它能在不间断钻井过程的条件下准确、可靠、实时地测量井斜、方位、工具面等参数,井斜测量的实时性、准确性是保证自动垂直钻井中控制井斜精度的关键因素之一,但高温、高压等复杂的工作环境导致了传感器输出的非线性,直接影响测斜仪的工作性能。本文提出了一种基于单片机与CAN总线的随钻测斜仪,文章重点阐述了测斜仪的硬件结构及电路原理,并介绍了信号采集及传感器补偿的程序实现,通过井斜测量的实验,证明该系统的井斜测量误差△INC≤±0.1°;方位测量误差△Az≤±1.0°,测量精度满足现场实际的测量要求。 相似文献
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MIRAN MILKOVIC 《International Journal of Electronics》2013,100(1):215-228
A high performance pressure sensor circuit is described with a digital signal interface for accurate remote sensing of pressure. The signal conditioning circuitry converts sensor resistance variation into a digital signal. Automatic offset error correction prevents long term and temperature drift effects on overall performance. The digitized signal is detected remotely over two wires by means of optical or ferrite coupling. The same two wires were used for power supply delivery. Floating operation allows good performance in a noisy environment. Test results have shown less than 0-25 psi/°C input equivalent pressure error in a temperature range of – 25°C to +75°C. The non-linearity was less than 0-2% in a dynamic pressure range of 500/1 at room temperature. 相似文献
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Electromigration (EM) parameters in the eutectic SnPb solder were measured using the edge displacement method (EDM) and an atomic force microscope (AFM) in the temperature range of 60° to 140°C. The measured drift velocity was found to be 0.3 Å/sec when the solder stripe was stressed under 4.9×104 A/cm2 at 80°C, and it increased as the current density or the temperature increased. The products of DZ* at 60°C, 80°C, 100°C, 120°C, and 140°C were also obtained. In addition, the EM activation energy was determined to be 0.45 eV at the temperature range 60–100°C and 0.55 eV at the temperature range 100–140°C. These two activation energies may correspond to the Sn and Pb diffusion at the two temperature ranges. These values are very fundamental to current-carrying capability and mean-time-to-failure measurement for solder joints. 相似文献
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R. P. Dixit Bani Hazra A. K. Kush 《Journal of Infrared, Millimeter and Terahertz Waves》1997,18(4):859-864
Frequency drift of Gunn oscillators is a major cause of concern in most of the Millimeter wave communication systems. This paper describes a simple and cost effective technique to arrest the frequency drift of a Ka band Gunn oscillator within 15 MHz for the operating temperature range of 0°C to 60°C as against a typical drift of about 50 to 100 MHz for free running Gunn oscillator for the same temperature range. At the ambient, the oscillator remains within ±1 MHz from switching on to stabilization. The temperature variation is sensed with a small thermistor bead placed close to the diode and a correction voltage is applied to the bias to compensate for the frequency drift. This compensation circuit also takes into account the non-linear behaviour of the thermistor and the Gunn oscillator with the temperature. 相似文献
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研制了一种以SiO2材料作为温度补偿层的S波段温度补偿型薄膜体声波谐振器(FBAR)窄带滤波器.研究了SiO:层厚度对FBAR温度漂移特性的影响,对不同厚度SiO:层时的温度补偿特性进行了仿真.仿真结果表明,当Mo/AlN/Mo的厚度为0.15,1.35和0.15 μm,SiO2层的厚度为10 nm时,FBAR的频率温度系数(TCF)约为3×10-6/℃.采用MEMS工艺制备了温度补偿型FBAR滤波器芯片并进行了测试.测试结果表明,滤波器的中心频率为2 492 MHz,中心插损为3.74 dB,3 dB带宽为17 MHz,相对带宽为0.68%,在2 477和2 507 MHz处阻带抑制分别为27.44和33.81 dBc.在三温(常温25℃、高温85℃、低温-55℃)对该滤波器的S参数进行了测试,计算得出频率温度系数为5×10-6/℃.与未加入温度补偿层的传统滤波器相比,频率温度系数改善明显. 相似文献
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以天马望远镜(简称TM65m)为研究对象,采用仿真与实验相结合的方法,对结构重力作用下主面面形精度和天线指向精度的变化进行了研究.借助有限元软件分析不同俯仰角下结构重力变形,得到主面相应的促动器调整量,将其加载到主动面系统中,经调整后天线效率在俯仰角35°和71°提高了20%.主面重力变形修正后,其顶点位置发生变化,将计算结果转化到指向模型中,得俯仰角由5°旋转到90°指向发生了0.037 99°的变化,与实际指向模型重力误差修正项系数的误差为4%.同时,发现天线俯仰及以上部分结构自重在不同俯仰角下引起俯仰轴弯曲变形,有限元分析得最大挠度为3.2 mm,挠度变化趋势与倾斜仪测量结果一致性较好,由此导致的俯仰指向变化达0.012 14°.因此,合理的结构设计对提高天线精度非常重要. 相似文献
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Zekun Zhou Luping Feng Yingqian Ma Yue Shi Xin Ming Bo Zhang 《International Journal of Electronics》2013,100(10):1427-1438
A novel bandgap reference (BGR) with low temperature and supply voltage sensitivity without any resistor, which is compatible with standard CMOS process, is presented in this article. The proposed BGR utilises a differential amplifier with an offset voltage proportional to absolute temperature to compensate the temperature drift of emitter–base voltage. Besides, a self-biased current source with feedback is used to provide the bias current of the BGR core for reducing current mirror errors dependent on supply voltage and temperature further. Verification results of the proposed BGR implemented with 0.35?µm CMOS process demonstrate that a temperature coefficient of 10.2?ppm/°C is realised with temperature ranging from ?40°C to 140°C, and a power supply rejection ratio of 58?dB is achieved with a maximum supply current of 27?µA. The active area of the presented BGR is 160?×?140?µm2. 相似文献