Electrical properties of PZT aerogels

PZT aerogels are prepared by sol-gel processing and subsequent supercritical drying. After sintering of the highly porous and uncalcined green body for up to 16 h in the temperature interval from 650 to 950 °C, a porous ceramic with a perovskitic PZT backbone is obtained. These PZT aerogels were characterized in terms of a possible application as ultrasound transducers. Samples were sintered in the temperature range between 650 and 950 °C and their elastic modulus was determined. Dielectric permittivities and dielectric charge constants were measured, the results can be interpreted with respect to the porosity and surface area of the samples. The electrical resistance of PZT aerogels is low compared to bulk material, a significant contribution of surface layer conductivity could be determined. The resulting low electrical breakdown field strengths hinder polarization. Additionally the inhomogeneous distribution and small strength of local poling fields has to be considered. Nevertheless dielectric hysteresis loops were obtained for samples annealed at 850 and 950 °C, respectively.     

On the correlation between crystallinity of platinum bottom electrode and that of MOD derived PZT thin films

Growth of well(111)-oriented Pt and Pt/Ti films on SiO₂/Si(111) substrates and crystallinity of PZT films grown on the Pt(111)/SiO₂/Si(111) and Pt(111)/Ti/SiO₂Si(111) substrates have been investigated. It was found by X-ray diffraction analysis that well (111)-oriented Pt film with a best full-width at half maximum (FWHM) of 0.28° was grown by the DC sputtering method. PZT films were prepared by metallo-organic decomposition (MOD) on Pt(111)-coated SiO₂Si(111) substrates. The crystallinity of the PZT films improved as the FWHM of the Pt(111) diffraction peak decreased. The best FWHM obtained for a PZT film grown on a Pt(111)/Ti/SiO₂/Si(111) substrate was 0.33°.     

Effect of electrode interfaces on peak-drift switching current of PZT thin films

In this study, we investigated the impact of electrodes on the structural, crystal orientation, and electrical characteristics of lead zirconate titanate [Pb(Zr_0.52Ti_0.48)O₃, PZT] thin films, that were deposited on Pt, Au, and LaNiO₃ (LNO) electrodes through sol-gel processes. The peak voltage, that is, the voltage corresponding to the maximum switching current point, was developed to depict the novel peak-drift electric characteristics in ferroelectric thin films. It increases in the positive ferroelectric peak voltage, and decreases in the negative peak voltage with an increase in the driving voltage amplitude. Based on space-charge-limited bulk conduction, we evaluated the peak-drift phenomenon, Schottky contact and their influences on the switching current. When polarization orientation is reversed, the Schottky contact disappears at one side of the PZT/electrode, and forms at the other side synchronously. Our results indicate that the formation of a Schottky contact affects the shape of the switching curves, and its disappearance influences the magnitude of the current characteristics.     

Bottom electrode crystallization of PZT thin films for ferroelectric capacitors

The bottom electrode crystallization (BEC) method was applied to the crystallization of PZT thin films deposited by laser ablation over Si/SiO₂/Ti(Zr)/Pt structures, with the platinum films being deposited at two different temperatures. The results were compared with those obtained by rapid annealing with halogen lamps and furnace annealing. PZT films crystallized over Pt made at lower temperature with Ti adhesion layers tend to have a (1 1 1) preferential orientation, while those deposited on platinum made at higher temperature tend to have a (1 0 0)/(1 1 1) mixed orientation. When Zr adhesion layers are used, the PZT films crystallized over Pt have a preferential (1 0 0) orientation, except for films deposited over Pt made at 500 °C and crystallized with a high heating rate. The ferroelectric properties of the films crystallized with the BEC method are good, being similar to those obtained with the other crystallization methods using the same parameters.     

Effects of normal load on nanotribological properties of sputtered carbon nitride films

The nanotribological properties of amorphous carbon nitride (CN_x) films of ∼380 nm thickness were investigated, in the normal (contact) load range of 2–20 mN, using a Berkovich diamond indenter. The amorphous CN_x films tested in this work were grown on Si(100) substrates by reactive sputtering and energetic ion bombardment during deposition (IBD). The dependence of the friction behavior of the CN_x films on normal load (NL) was investigated in terms of nanomechanical properties, deformation mode and Atomic Force Microscopy (AFM) images of scratched surfaces, and the intensity of IBD. In films sputtered without IBD, the increase of the normal load caused the coefficient of friction to decrease initially to a minimum value and, subsequently, to increase to a maximum value, after which, it remained constant. The dominant friction mechanism in the low-load range was adhesion, while both adhesion and ploughing mechanisms contributed to the friction behavior in the intermediate and high-load ranges. Elastic and plastic deformation (PD) and delamination of the amorphous CN_x films occurred, depending on the normal-load ranges. On the other hand, films sputtered with high-energy IBD showed a load-dependent transition in both the scratch and the friction responses. Nanoscratching below 5 mN showed mainly elastic behavior of the film, while above 10 mN, a mixed elastic–plastic behavior was identified. Testing under a normal load of 20 mN resulted in local grooving at the film surface; however, in situ profiling of the scratch trace and AFM images showed no evidence of film failure. The increased load-carrying capacity, higher hardness and elastic response obtained with films grown with high-energy IBD, and the dominant friction mechanism at each load range illustrate the normal load dependence of the nanotribological properties of the sputtered CN_x films.     

Structural and mechanical properties of facing-target sputtered amorphous CNx films

Structural and mechanical properties of carbon nitride films, deposited using a DC facing-target reactive sputtering system at various N₂ fractions (P_N) in the gas mixture, were studied systematically. XPS analyses indicate that N concentration is not directly proportional to P_N, and it rises quickly to a saturation value of ∼ 33 at.% at a P_N of 20%. The ratio of N–C(sp²)/N–C(sp³) increases with the rise of P_N from 0% to 20%, and then decreases with further rising P_N. However, the number and size of disordered sp²-hybridized C clusters continue to increase over the whole range of P_N, which is consistent with the Raman and high-resolution transmission electron microscopy measurements. Nanoindenter measurements show that the hardness of the films continuously decreases from ∼ 17.5 to ∼ 5.6 GPa with the increasing P_N from 0% to 100%, due to the conversion from sp³ C to sp² C and the clustering of sp² C structure.     

Electrical properties of Li-doped NiO films

Lithium-doped NiO films were deposited by radio frequency magnetron sputtering on Corning 1737 glass substrates. The Li concentrations in the films varied from 0 to 16.29 at.%, as determined by wavelength-dispersive X-ray analysis and inductively coupled plasma mass spectrometry. The effects of Li content on properties such as microstructure, resistivity, and electrical stability were studied. The results show that the doped Li ions tend to occupy crystal defect sites such as vacancies or segregate on the film surface. Initially, doped Li occupied the nickel vacancies in the film, decreasing the electrical conductivity. When the Li concentration was further increased, some Li segregated on the film surface and formed bulges at high Li concentrations. These Li-rich oxides covering the film surface served as partitions between the film and moisture from the atmosphere. As a result, the Li-doped NiO films show a relatively high arrestment to electrical resistance aging.     

Construction and properties of a continuously renewing platinum electrode

A continuously renewing platinum electrode is created by positioning two electrochemical cells symmetrically around a platinum ball so that opposite sides of the ball are pressed against gaskets situated in holes in the walls of the two cells. Thereby two opposite segments of the surface of the platinum ball are in contact with the electrolytes in the two cells and can be polarised independently with respect to the two electrolytes. When the ball is rotated the surface segment, which constitutes one electrode, is continuously being replaced by surface arriving from the segment, which constitutes the other electrode. By proper choice of electrolytes and potentials material deposited on the electrode surface in one cell may be released in the other cell. The effect is demonstrated with hydroxyl, sulfate and cupric ions. The transport of hydroxyl ions from one cell to the other is subject to anodic passivation caused by the formation of a surface layer of Pt-oxide. Continuous renewal of the catalytic activity of the platinum electrode due to continuous removal of inhibitory material is demonstrated with the electrooxidation of methanol. The oxidation of methanol is subject to anodic passivation caused by bound sulfate ions.     

Optical properties and new carbon forms of sputtered amorphous carbon films

Amorphous carbon films were deposited by r.f. magnetron sputtering at various bias voltages V_b applied on Si substrate. We studied the optical properties of the films using in situ spectroscopic ellipsometry (SE) measurements in the energy region 1.5–5.5 eV. From the SE data analysis the dielectric function ε(ω) of the a-C films was obtained, providing information about the electronic structure and the bonding configuration of a-C films. Based on the SE data the films are classified in three categories. In Category I and II belong the films developed with V_b≥0 V (rich in sp² bonds) and −100≤V_b<0 V (rich in sp³ bonds), respectively. The dielectric function of the films belonging in these two categories can be described with two Lorentz oscillators located in the energy range 2.5–5 eV (π–π^*) and 9–12 eV (σ–σ^*). A correlation was found between the oscillator strength and the sp² and sp³ contents. The latter were calculated by analyzing the ε(ω) with the Bruggeman effective medium theory. In films deposited with V_b<−100 V (Category III), the formation of a new and dense carbon phase was detected which exhibits a semi-metallic optical behavior and the ε(ω) can be described with two oscillators located at ∼1.2 and ∼5.5 eV.     

Effect of sol composition on dielectric and ferroelectric properties of PZT composite films

Crack free calcium modified PZT composite films have been synthesized using modified sol-gel process by depositing the slurries prepared by mixing powder of composition PbZr_0.52Ti_0.48O₃ and sol of composition Pb_(1−x)Ca_xZr_0.52Ti_0.48O₃ (where x = 0, 0.06, 0.1) on Pt(1 1 1)/Ti/SiO₂/Si substrate. The infilteration process has also been employed which resulted in dense microstructure of the films. Thickness of the films as measured by SEM of cross section of the films was more than 25 μm. The XRD patterns of the resultant films consisted of pure perovskite phase and no peak related to either pyrochlore phase or Pt substrate was observed. The room temperature dielectric constant and loss were compared. The temperature dependence of dielectric constant revealed that T_C of all the films was same, i.e., 351 °C, in spite of different compositions of the sol used. Well saturated PE-loops of the films show that the films were ferroelectric in nature.     

Effect of electrode and substrate on the fatigue behavior of PZT thick films fabricated by aerosol deposition

10 μm-thick lead zirconate titanate (PZT) films with identical LaNiO₃ (LNO) top and bottom electrodes were fabricated on silicon and yttria-stabilized zirconia (YSZ) substrates by aerosol deposition (AD). A Pt electrode was also made for comparison. The dielectric, ferroelectric and fatigue behaviors at different fields were investigated. The PZT films on YSZ/LNO showed the highest dielectric and ferroelectric properties and good fatigue behavior under various fields. PZT films with a Pt electrode also showed good fatigue behavior up to 10⁸ cycles as thicker film can minimize the effect of defect entrapment near the interface.     

Effect of gas-timing technique on structure and optical properties of sputtered zinc oxide films

Zinc oxide thin films were prepared by the RF magnetron sputtering using a gas-timing technique whereby the flow of argon into the sputtering chamber was controlled by an on–off sequence. With this technique, polycrystalline ZnO thin films on glass substrates have been achieved without any thermal treatment of the substrate. In addition, the RF power and the gas-timing sequence can be fine-tuned to produce the hexagonal structure of ZnO thin films. X-ray diffraction (XRD) measurements confirm a (0 0 2) plane oriented wurtzite structure ZnO thin films. The optimized conditions for this hexagonal structure are an RF power of 30 W and an on–off gas-timing sequence of 50:2 s. The root mean square surface roughness of ZnO thin films measured by atomic force microscopy are in the range of 6.4–11.5 nm. The optical transmittance of ZnO thin films is over 85% in the visible range.     

Effects of experimental parameters on the physical properties of non-stoichiometric sputtered vanadium nitrides films

Polycrystalline vanadium nitrides thin films were deposited onto (1 0 0)-oriented silicon wafers by reactive dc planar magnetron sputtering. The influence of the nitrogen gas flow (from 0 to 15 sccm) was studied. Several substrate temperatures were investigated: 150, 400 and 650 °C. Analytical techniques including X-ray diffraction and reflectivity, atomic force microscopy and optical photospectrometry were used to characterize the structure, the morphology and the optical properties of the films. The measured thickness indicates that the deposition rate is decreased (from 3.5 Å for 0 sccm to 1.5 Å for 15 sccm) with increasing nitrogen gas flow. Obtained structures depend on the substrate temperature. The structure of pure vanadium (0 sccm) varies from amorphous phase at 150 and 400 °C to -V phase at 650 °C. The films crystallize dominantly in β-V₂N_1−x phase at low nitrogen gas flows and in δ-VN_1−x phase at high nitrogen gas flows. The as-deposited VN films were highly textured. The texture seems to depend on the nitrogen gas flow. The root mean square (rms) derived from atomic force microscopy (AFM) varies with the nitrogen gas flow. The optical reflectivity of VN films shows high values in the infrared region.     

Electrical properties of poly(p‐phenylene vinylene) films with an incorporation of platinum metal nanoparticles

The effects of platinum metal nanoparticles on a conjugated polymer were investigated by monitoring the electronic structures and measuring the electrical properties of poly(p‐phenylene vinylene) (PPV) and PPV/Pt nanocomposites films. Enhanced current density in PPV/Pt nanocomposite films was obtained by the incorporation of Pt nanoparticles into the conjugated polymer PPV. This result agrees well with our observation of an increase in the electron affinity and an increase in roughness with increasing Pt nanoparticle content. © 2010 Wiley Periodicals, Inc. J Appl Polym Sci, 2011     

Effect of polymer structures on electro-optical properties of polymer stabilized liquid crystal films

The polymer stabilized liquid crystal (PSLC) film is a relatively novel electro-optical material, which is generally obtained by dissolving a small amount of a bifunctional photoreactive monomer in a low molecular mass liquid crystal. In this paper, the PSLC films were prepared with photoreactive biphenyl methacrylate monomers by photopolymerization induced phase separation. The effects of liquid crystal concentration, curing time, monomer structures and alignment layer on the electro-optical properties of PSLC films were investigated. The results show that the transmittance in the OFF state (T_OFF) increased with the liquid crystal concentration, but the driving voltage decreased. T_OFF was also influenced by the curing time. Furthermore, when polyimide was used as alignment layer, the films prepared from the bifunctional monomer shows a higher T_OFF, while those from the single functional monomer exhibited a deformed electro-optical curve due to the unsteady polymer networks.     

Effect of polymer structures on electro-optical properties of polymer stabilized liquid crystal films

The polymer stabilized liquid crystal (PSLC) film is a relatively novel electro-optical material, which is generally obtained by dissolving a small amount of a bifunctional photoreactive monomer in a low molecular mass liquid crystal. In this paper, the PSLC films were prepared with photoreactive biphenyl methacrylate monomers by photopolymerization induced phase separation. The effects of liquid crystal concentration, curing time, monomer structures and alignment layer on the electro-optical properties of PSLC films were investigated. The results show that the transmittance in the OFF state (T _OFF) increased with the liquid crystal concentration, but the driving voltage decreased. T _OFF was also influenced by the curing time. Furthermore, when polyimide was used as alignment layer, the films prepared from the bifunctional monomer shows a higher T _OFF, while those from the single functional monomer exhibited a deformed electro-optical curve due to the unsteady polymer networks. __________ Translated from Polymer Materials Science and Engineering, 2008, 24(1): 63–66 [译自: 高分子材料科学与工程]     

Design,synthesis, microstructure and electrical properties of thermal-strained PZT films

The integration units with functional and structural material components have been developed largely recently. In the present study, 200 nm-thick polycrystalline PbZr_0.52Ti_0.48O₃ (PZT) films with a dense columnar structure were grown on LaNiO₃ (LNO) buffered heat-resistant steel substrates via a low-cost chemical solution approach. The behavior of the functional PZT films when combined with the structural steel was investigated mainly by TEM and electrical measurement. A large in-plane compressive stress was obtained in the PZT films due to the thermal expansion mismatch of about 88.2 % between the thin films and the steel substrates, which intensifies the orientation of the films toward c-axis. Sub-10 nm 90° nanodomains were alternately distributed in [001] grains which is beneficial to the piezoelectric performance, and the equivalent d₃₃ value is ～44.4 pm V^?1. A remnant polarization (P_r) of ～67.3μC/cm² and a dielectric constant of ～425 were obtained. The enhanced electrical properties are associated with the stress-induced improved c-axis spontaneous polarization and crystal orientation in the hybrid system. This work may provide a theoretical basis for further integrating functional elements into metallic materials, which is valuable for covering the gap between academic research and industrial mass production.