蓝色魅力——罗技极光银貂鼠标

罗技公司在推出了极光旋貂、动感旋貂系列鼠标产品之后,又为其光电貂族产品添加了新丁,这就是令人振奋的蓝色极光银貂。 极光银貂鼠标采用了目前被广泛应用的新型光电技术,可令使用者免去清洗传统鼠标轨迹球的烦恼。在鼠标下方内置了一个光学引擎,通过光学反射,该引擎     

传输高功率CO2激光辐射的卤化银多晶光纤

传输高功率ＣＯ_２激光辐射的卤化银多晶光纤最近１０～１５年来传输ＣＯ。激光辐射的光纤研究引起人们的极大关注。这主要是由于这类光纤在医学和工艺学方面有广泛的应用前途。红外光纤的研究途径有空心光纤［１］、氟化物光纤、硫族化合物玻璃［２，３］和晶体材料光纤?..     

多层陶瓷电容器银／钯内电极浆料的烧结

研究了多层陶瓷电容器银／钯内电极浆料的烧结行为。热重分析（ＴＧＡ）结果表明，在烧结过程中，银／钯内电极浆料发生氧化－还原反应。ＸＲＤ分析表明，由于内电极浆料的氧化－还原反应，在不同的烧成温度下，银／钯内电极具有不同的合金状态。通过计算，可以初步确定内电极的银／钯合金状态和银／钯合金为银／钯比例。这些结果有助于理解多层陶瓷电容器在烧成过程中的银扩散和挥发。     

厚膜电路银迁移机理及水滴试验测试

本文着重探讨了厚膜混合电路的银迁移现象，分析了银迁移的机理，影响银迁移的主要因素和水滴试验测试方法。     

“轻薄”MD单放机

手提MD机的发展速度很快,这次介绍的Panasonic SJ-MJ75手提MD机,除了有银、灰色、蓝色、红色等多彩款式外,音质也可与SONY、SHARP的高级单放机相比,值得追新一族购买。据Panasonic提供的资料显示,MJ75的重量、体积在     

化学沉银工艺的应用实践—深圳恩达

化学沉银是近年新兴起的印制板表面处理工艺，预料沉银和浸锡会成为下一代主流的表面涂覆工艺。本概述化学沉银工艺流程、工艺参数、制程要点，质量要求等，同时结合生产实际，对沉银工艺影响因素，常见问题及解决方法阐述了自己的实践应用体会。     

毫微米胶体金,银加强法和锇酸固定在神经组织包埋前免疫电镜术…

对于神经递质和受体的精确定位需要有可靠、敏感和高分辨率的包埋前免疫电镜技术、近年来，包埋前毫微米胶体金（直径１．４毫微米）和银加强法开始应用于神经科学研究。然而，存在着金－银颗粒在锇酸处理后明显减小的问题。我们发现包埋前免疫细胞化学染色中经过１０分钟银加强的金－银颗粒数目，在锇酸处理后明显地减少。但是，经过２次或３次１０分钟银加强的组织中，金－银颗粒的数目和大小都没有明显变化，神经递质和受体可以被     

中小型设计企业族库管理系统的实施分析

<正>随着设计族文件的累积，设计企业搭建自身的族库管理系统对族文件进行集中存储和统一管理，方便设计师在生产过程中快速的储存、共享和调用，显得尤为重要。本文结合设计院生产流程研究了族库管理系统搭建的思路和框架，介绍了在中小型设计企业中的实施侧重点和实施阶段策划。族是Revit模型的基本组成单元，是同类建筑构件的集合。族库是由族文件构成的数据库，是企业的BIM资源池，能够更加精确的支撑起BIM应用的顺利实施。     

领袖风风采：LG VX6000

与大显以往推出的新机不同,这款8月推出的C608手机没有走以往的精品路线,而是打出“我是玩e族”的口号,锁定年轻好动的青年一族。整机尺寸为83.5×46.5×19.3(毫米),重量为83克,属于市面上较为轻巧的机型。色彩选择上则增添了这一季最为流行的玫瑰红色,配合原有的银、白色系,非常讨巧,而颇为中性的外观设计,相信会有不少男生喜欢它。 既然是针对“玩e族”,就不能不提它的网络功能。这款C608手机支持CDMA2000 1X,掌中宽带功能可以提供高达153.6kbit/s的网络浏览速度。基于WAP平台的互动视界功能,随时浏览丰富的网络     

银掺杂对低温烧结四元系陶瓷压电性能的影响

研究了微量银掺杂对多层压电陶瓷器件中使用的高性能低温烧结PMN－PNN－PZT（PMNNZT）基陶瓷压电性能的影响。结果表明：在烧结后没有产生明显的新相，少量银掺杂促进了陶瓷的烧结，增强了PMNNZT陶瓷的铁电性。对其压电性能的影响比较显著，具体表现为：微量的银掺杂增强了压电性能，但更多的银掺杂恶化了陶瓷的压电性能。该文解释为银掺杂影响了压电陶瓷材料的应变性能，从而进一步影响了压电性能。     

Direct writing of inkjet-printed short channel organic thin film transistors

A direct-writing fabrication process for fully inkjet-printed short-channel organic thin-film transistors (OTFTs) has been developed. Channels as narrow as 800 nm between two printed Ag electrodes were achieved by printing a special Ag ink on an SU-8 interlayer, which can be partially dissolved by the solvents used in the Ag ink. The ridge formed along the printed Ag line edges due to redistribution of the interlayer material during the drying process limits the ink spread, and separates neighboring printed lines, and is the key to defining an ultra-narrow channel for transistor fabrication. The short-channel OTFTs fabricated using this technique have demonstrated well-defined linear and saturation regimes. An extracted mobility of 0.27 cm²/Vs with an on/off ratio of 10⁵ was obtained at a driving voltage of −12 V. The excellent performance of these devices demonstrates the potential of this technique in fabrication of short-channel devices using standard printing technologies.     

印刷电子用导电性油墨材料的开发

概述了印刷电子用纳米胶,电极/线路用和接合用金属纳米油墨和无须烧结的Ag纳米粒子技术的开发和应用。     

喷墨打印银电极用于有机晶体管器件与电路

使用喷墨打印技术制得了高质量的导电银电极,并制备了高性能的有机晶体管器件与简单电路。经优化的喷墨银电极表面形貌光滑、一致性好、电导率高。通过限制墨滴在打印基底上的浸润能力,可以有效减小电极间的沟道长度。基于这种高质量打印银线的短沟道有机晶体管和简单“非”门电路均展示出了很好的电学性能。     

Effects of the Ag content on the geometrical and electrical characteristics of the screen-printed etched gate electrodes of OTFTs using Ag ink

During the fabrication of gate electrodes by Ag ink screen-printing combined with a wet-etching process, the effects of the Ag content on the geometrical and electrical characteristics such as the thickness and surface roughness of gate electrode, step coverage with the gate dielectric, leakage current associated with the step coverage, and the electrical performance of organic thin film transistors (OTFTs) were investigated. An increase of Ag content resulted in the thick and densely-packed Ag electrode, which had a stable and excellent conductivity. But, the large thickness of Ag electrode caused the worse step coverage of PVP (polyvinylphenol) dielectric layer on the edge of the Ag gate electrode, therefore, for Ag contents more than 40 wt.%, MIM (metal-insulator-metal) devices and OTFTs with the Ag gate electrodes had very large leakage current (>10⁻⁴ A/cm²) and off-state current (>∼19 pA/μm) due to the poor step coverage of PVP dielectric layers, respectively. Finally, we found that an Ag content of 20-30 wt.% was suitable for the screen-printed etched gate electrode of OTFTs using Ag ink. This range generated a mobility of 0.18 cm²/V s, an on/off current of 5 × 10⁶, and an off-state current of 0.002 pA/μm, which are suitable to drive e-paper.     

应用于印制电子的纳米银材料

最近印制电子技术发展日益完善,这项技术在传统印制电路板行业中也展现出巨大的应用前景。本文着重介绍了应用于印制电子的银纳米材料的发展现状,从与传统PCB导线制备工艺的比较中说明打印法制备银导线及材料的优势。文中还讨论了用于印制电子的纳米银材料的制备、墨水的配制、打印工艺、应用前景。     

Fully solution-processed organic thin-film transistors by consecutive roll-to-roll gravure printing

A high-performance/flexible organic thin-film transistor (OTFT) is fabricated by using all-step solution processes, which are composed of roll-to-roll gravure, plate-to-roll gravure and inkjet printing with the least process number of 5. Roll-to-roll gravure printing is used to pattern source/drain electrodes on plastic substrate while semiconductor and dielectric layers are printed by consecutive plate-to-roll gravure printing. Finally, inkjet printing of Ag organometallic ink is used to pattern the gate electrode. The fabricated OTFT exhibits excellent electrical performance, field-effect mobility over 0.2 cm²/Vs, which is one of the best compared to the previous works. The deposition of a self-assembled monolayer on the source-drain electrodes results in a higher work function which is suitable for a p-type polymer semiconductor. Moreover, the formation of dense gate electrode line on hydrophobic dielectric is achieved by selecting suitable Ag ink.     

A Simple Process for Synthesis of Ag Nanoparticles and Sintering of Conductive Ink for Use in Printed Electronics

Various-sized Ag nanoparticles capped with oleylamine were synthesized by means of a thermal decomposition process for low-temperature electronic devices. The Ag nanoparticles, which had diameter of 5.1 nm to 12.2 nm, were synthesized in incubation and ripening stages related to nucleation and growth. After the Ag nanoparticles were made into ink with a proper solvent, inkjet printing and thermal sintering methods were used to form a metal thin film with thickness of 100 nm. A type of thermal sintering related to percolation transformation and surface sintering was conducted at a temperature much lower than the melting point of bulk Ag. The electrical resistivity was examined with the aid of a four-point probe system and compared with the resistivity of bulk Ag, showing that the Ag film had much higher resistivity than bulk Ag. To improve the electrical stability and properties, we applied hexamethyldisilazane (HMDS) surface treatment to the substrate and dipped the as-deposited films into methanol. Both treatments helped to diminish and stabilize the resistivity of the printed conductive films.     

A printing technology combining screen-printing with a wet-etching process for the gate electrodes of organic thin film transistors on a plastic substrate

We have developed a practical printing technology for the gate electrode of organic thin film transistors (OTFTs) by combining screen-printing with a wet-etching process using nano-silver (Ag) ink as a conducting material. An Ag film was deposited onto a PVP (polyvinylphenol)-coated PC (polycarbonate) plastic substrate by screen-printing with nano-Ag ink, where Ag content of 20 wt.% was mixed using a terpineol solvent. Subsequently, the film was cured at 200 °C for 60 min, and then finally wet-etched through patterned positive photo-resist masks. The screen-printed Ag electrode exhibited a minimum line width of ∼5 μm, a thickness of ∼65 nm, and a resistivity of ∼10⁻⁶ Ω cm, producing good geometrical and electrical characteristics for a gate electrode. Additionally, it also provided good step coverage with the PVP dielectric layer, and consequently leakage current between the gate and source/drain electrodes was eliminated. Moreover, the electrical characteristic of the screen-printed Ag electrode was not significantly changed even after a bending test in which the Ag electrodes were bent with a bending radius of 6 mm and 2500 iterations of cyclic bending. OTFTs with the screen-printed Ag electrode produced a saturation mobility of 0.13 cm²/Vs and a current on/off ratio of 1.79 × 10⁶, being comparable to those of an OTFT with a thermally evaporated Al gate electrode.     

All-solution processed organic solar cells with top illumination

All-solution processed organic solar cells with inverted device architecture were demonstrated. Devices contain opaque bottom electrodes and semitransparent top electrodes, resulting in top illuminated devices. Nanoparticles-based Ag ink was used for inkjet printing both top and bottom electrodes. Semi-transparent top electrode consists of high conductivity PEDOT:PSS and Ag current collecting grids. Printed electrodes were compared to evaporated Ag electrodes (both top and bottom) and to ITO electrode in terms of transmittance, roughness, sheet resistance and device performance. All-solution processed devices with top illumination have average PCE of 2.4%, using P3HT:PCBM as photoactive layer. Top-illuminated devices with inverted architecture and bottom-illuminated device with conventional architecture, containing the identical layers, but in the reverse sequence, were then compared. Performed studies have revealed an advantage of inverted cell architecture.     

Microstructure and electrical properties of high power laser thermal annealing on inkjet-printed Ag films

In this work, a high power continuous-wave (CW) Nd:YAG laser was used for thermal treatment of inkjet-printed Ag films - resulting in the elimination of organic additives (dispersant, binder, and organic solvent) in the Ag ink and annealing of Ag nano-particles. By optimizing laser parameters such as laser power and defocusing value, the laser energy can be totally converted into heat energy, which is used for thermal treatment of inkjet-printed Ag films. This results in the microstructure and the resistivity of the films to be controlled. We investigated the thermal diffusion mechanisms during laser annealing and the resulting microstructures. The impact of high power laser annealing on microstructures and electrical characteristics of inkjet-printed Ag films was compared to those of the films annealed by a conventional furnace annealing. Focused ion beam (FIB) channeling images show that the laser annealed Ag films have large columnar grains and a dense void-free structure, while furnace annealed films have much smaller grains and exhibit void formation. As a result, the laser annealed films have better electrical properties (low resistivity) compared to furnace annealed samples.