Further studies on the gain properties of a Gas Electron Multiplier with a Micro-Induction Gap Amplifying Structure (GEM-MIGAS) aimed at low-energy X-ray detection

A Gas Electron Multiplier with Micro-Induction Gap Amplifying Structure (GEM-MIGAS) is formed when the induction gap of the GEM is set between 50 and 100 μm using kapton pillars spaced at regular intervals. This configuration combines the properties of a GEM and Micromegas, allowing operation in tandem to generate high charge gains. We measured the essential operational parameters of this system using argon–isobutane (IB) and helium–IB gas mixtures. The present short induction gap GEM was able to achieve effective gains exceeding 2×10⁴ using argon–IB and 10⁵ using helium–IB mixtures. In view of the high gains achieved, particularly when using helium-based gas mixtures, these studies confirmed the possibility of using the present system for high-performance sub-keV X-ray detection.     

Effect of applying electrical potential to a CO2 laser welding of different thickness plates

This study was aimed at developing laser welding with an applied voltage potential to increase the bead root width in laser welding. Also, in order to enhance the welding speed and the butt joint gap tolerance, the influences of the experimental conditions: supplied voltage between plate and backside electrode, welding speed, plasma operate gaseous species, and the butt joint gap, on the bead root width were investigated. Although it is necessary to avoid over heating and melting the plates, it is applicable for higher speed and wider gap butt joint welding than a conventional laser welding. In the case of butt joint welding with a thickness of 2.0 and 0.8 mm steel sheets by using 5 kW CO₂ laser system, it is concluded that this method is effective for increasing of the welding speed from 5 to 8 m/min. Knowledge of optimum conditions and configurations has guided to extend this process to more challenging structural materials such as a tailored blank steel sheet.     

Amplification properties of a HeArCH4 mixture

A multiwire proportional chamber operating in the true proportional region has been used to investigate the amplification properties of a HeArCH₄ gas mixture as a function of the relative concentration of argon in helium-argon. A voltage dependent optimum concentration value of about 0.08 leads to a maximum gaseous amplification. The experimental observations are interpreted in terms of Penning effects.     

Atmospheric pressure plasma jet operated at narrow gap spacings

The atmospheric pressure plasma jet (APPJ) makes use of a dielectric-barrier-free radio-frequency (RF) glow discharge for the production of a non-equilibrium plasma. Usually the APPJ is operated in the alpha mode at gap spacings in the mm range, where the alpha sheath thickness is in the order of 200-300 μm. Narrow gap spacings are experimentally not yet investigated, but it is expected that the bulk region of the alpha discharge should disappear and the discharge should exhibit a sheath-only structure.In order to provide experimental evidence for such situations, APPJs with gap spacings down to 0.1 mm are investigated. The electric properties of the APPJ are studied by measuring the current and voltage characteristics. Time-averaged images of the front view of the discharge are taken with a digital camera. By using an image-intensified gateable video camera the time development of the discharge is studied with nanosecond resolution.It was possible to sustain alpha discharges at gap spacings down to 100 μm, whereby the voltage needed decreases down to an rms voltage of 70 V. A weak indication for a laterally oscillating sheath in the 100 μm gap was found.     

Surface electronic states in metal-porous silicon-silicon structures

The character of electronic states in porous silicon (PS)-Si, Pd-PS interfaces, and/or PS bulk at the formation of the metal-PS-silicon heterostructure was studied. The energy parameters were estimated using the deep-level transient spectroscopy and capacitance-voltage characteristics at the accounting of the voltage drop distribution along the structure. The analytical expression for voltage drop distribution along dielectric layer, porous layer and space charge region in silicon was obtained by solving the equation for continuity of the electrostatic induction vector. The electronic states studied were shown to manifest the quasi-continuous sub-band in the energy gap if the porous layer was 30-nm thick. Their density increased, as the energy position was being transformed to a deeper energy level of E_v+0.81 eV at the PS layer growing to 90 nm wide.     

Controlled growth of carbon nanofibers using plasma enhanced chemical vapor deposition: Effect of catalyst thickness and gas ratio

The characteristics of carbon nanofibers (CNFs) grown, using direct current plasma enhanced chemical vapor deposition system reactor under various acetylene to ammonia gas ratios and different catalyst thicknesses were studied. Nickel/Chromium-glass (Ni/Cr-glass) thin film catalyst was employed for the growth of CNF. The grown CNFs were then characterized using Raman spectroscopy, field emission scanning electron microscopy and transmission electron microscopy (TEM). Raman spectroscopy showed that the Ni/Cr-glass with thickness of 15 nm and gas ratio acetylene to ammonia of 1:3 produced CNFs with the lowest I_D/I_G value (the relative intensity of D-band to G-band). This indicated that this catalyst thickness and gas ratio value is the optimum combination for the synthesis of CNFs under the conditions studied. TEM observation pointed out that the CNFs produced have 104 concentric walls and the residual catalyst particles were located inside the tubes of CNFs. It was also observed that structural morphology of the grown CNFs was influenced by acetylene to ammonia gas ratio and catalyst thickness.     

Flux monitor diode radiation hardness testing

A flux monitor diode is being explored as an option for measurement of the output of an X-ray tube that is used for active transmission measurements on a pipe containing UF₆ gas. The measured flux can be used to correct for any instabilities in the X-ray tube or the high voltage power supply. For this measurement, we are using a silicon junction p-n photodiode, model AXUV100GX, developed by International Radiation Detectors, Inc. (IRD, Inc.). This diode has a silicon thickness of 104 μ and a thin (3-7 nm) silicon dioxide junction passivating, protective entrance window. These diodes have been extensively tested for radiation hardness in the UV range. However, we intend to operate mainly in the 10-40 keV X-ray region. We are performing radiation hardness testing over this energy range, with the energy spectrum that would pass through the diode during normal operation. A long-term measurement was performed at a high flux, which simulated over 80 years of operation. No significant degradation was seen over this time. Fluctuations were found to be within the 0.1% operationally acceptable error range. After irradiation, an I-V characterization showed a temporary irradiation effect which decayed over time. This effect is small because we operate the diode without external bias.     

Change of the argon-based atmospheric pressure large area plasma characteristics by the helium and oxygen gas mixing

Oxygen and helium gases, often used in many plasma processes, were added to argon-based glow plasmas, produced at the atmospheric pressure, in order to study the controllability of the plasma characteristics by the supply gas mixing. Based on the electrical and optical diagnostics, the plasma parameters, such as the breakdown voltage, the rotational temperature, and the plasma uniformity, and their changes due to the gas mixing were investigated. The experimental results showed that the helium gas addition reduced the breakdown voltage (from 430 V to 300 V), the rotational temperature (from 465 K to 360 K), and the plasma uniformity. On the other hand, a small amount of oxygen gas increased the breakdown voltage (from 435 V to 463 V) and the rotational temperature (from 520 K to 600 K) due to various energy loss channels of the oxygen gas. The experimental results showed that it was possible to control the plasma characteristics by the gas mixing.     

Contribution of electron tunneling transport in semiconductor gas sensor

It was found that thin film devices derived from SnO₂ sols by spin-coating method showed unique thermal behavior of electric resistance in air involving a temperature region where resistance was independent of temperature. The temperature independent resistance region extended up to 400 °C, replacing a region of temperature-conventionally dependent resistance, as film thickness increased. Such unique behavior of resistance was observed also for a brush-coated device but not for screen-coated thick film devices or disk-type device, suggesting that the absence of mechanical forces applied during device fabrication favored the occurrence of the unique behavior. It was shown that the unique behavior could be well accounted for by postulating a combination of electron tunneling transport and conventional migration transport. Calculation of tunneling probability based on a simple model allowed estimating that electron tunneling transport can take place between oxide grains with a probability of 0.01 or larger if a gap in between is narrower than 0.01 nm.     

Investigation of the performance of an optimised MicroCAT, a GEM and their combination by simulations and current measurements

A Micro compteur à Trous (MicroCAT) structure which is used for avalanche charge multiplication in gas filled radiation detectors has been optimised with respect to maximum electron transparency and minimum ion feedback. We report on the charge transfer behaviour and the achievable gas gain of this device. A three-dimensional electron and ion transfer simulation is compared to results derived from electric current measurements. Similarly, we present studies of the charge transfer behaviour of a Gas Electron Multiplier (GEM) by current measurements and simulations. Finally, we investigate the combination of the MicroCAT and the GEM by measurements with respect to the performance at different voltage settings, gas mixtures and gas pressures.     

Optimization of titanium dioxide film prepared by electrophoretic deposition for dye-sensitized solar cell application

Nanocrystalline TiO₂ films were deposited on a conducting glass substrate by the electrophoretic deposition technique. It was found that the thickness of TiO₂ film increased proportionally with an increase in deposition time and deposition voltage. However, as the deposition duration or deposition voltage increased, the film surface was more discontinuous, and microcracks became more evident. The characteristic of the dye-sensitized solar cell using TiO₂ film as a working electrode was analyzed. The results of the energy conversion efficiency and the photocurrent density exhibited a relationship dependent on the TiO₂ thickness. Curve fitting of energy conversion efficiency vs. TiO₂ thickness revealed the optimum solar cell efficiency ~ 2.8% at the film thickness of ~ 14 μm.     

The Limits of a Rayleigh-Scattering Primary Thermometer

Progress in the development of an apparatus to compare the thermodynamic temperature of a gas with the temperature as determined by the International Temperature Scale of 1990 (ITS-90) is reported. The apparatus uses the Rayleigh scattering of light from a gas to provide an intensive measure of gas density, thus avoiding the need for corrections for dead volumes or wall adsorption required by conventional gas thermometry. A laser beam is shone through gas in two cells that are at the same pressure but different temperatures, and the measured ratio of the Rayleigh scattering signals from the two cells can be related to the ratio of the gas density in the cells. From the density ratio, the thermodynamic temperature of one cell can be inferred if the other cell is held close to the triple point of water. However, the Rayleigh scattering is weak and signals are small, making measurements with sufficiently small uncertainty extremely challenging. Since previous reports, the apparatus has been significantly modified, and these changes are described along with indicative results. In this paper, results of measurements in the range from 211 K to 292 K using both argon and xenon are reported. The results suffer from large systematic errors due to contamination in one of the measurement cells. Although the results do not provide reliable estimates of T  − T ₉₀, they indicate that measurements with uncertainties below 1 mK are feasible.     

The effects of hump electrode on the long gap plasma display panel with high Xe concentration ratio

It was reported that a plasma display panel with hump electrode in the long gap has improved discharge characteristics such as luminous efficacy, addressing jitter than long gap electrode structure. In this paper, as an extended study of previous work, we report properties of long gap discharge with hump electrode for various Xe concentration ratio in a Ne-Xe binary gas mixture. Due to the hump electrodes between long gap, discharge voltage is reduced by 20-30 V and high luminous efficacy is obtained at low voltages in high Xe percentage. For more detailed observation of discharge, ICCD images of infrared light emission from excited Xe in discharge cell are taken. The results show that the discharge is initiated between short gap of hump electrodes and the main part of the discharge is maintained between long gap electrodes. In addition, 3-dimensional simulation study shows that hump electrode shape has higher number of excited Xe and Xe₂ than the conventional one. This is well correlated with the experimental result showing higher luminance in the hump structure.     

Boundary area between gas and vacuum breakdown mechanism

This paper considers the transition from the gas breakdown mechanism to the vacuum breakdown mechanism. Gas breakdown mechanisms at the points of Paschen minimum and on the left from it, as well as vacuum breakdown mechanisms and their dependence on experimental parameters have been analysed. In accordance with this analysis, an experiment with the following variable parameters has been conceived and carried out: type of gas (i.e. residual gas); gas pressure; inter-electrode gap; electrode material; electrode surface topography; type of voltage load; and position in the insulation system of an additional source of ion-electron pairs i.e. of the α-radiation Bragg peak. By a statistical analysis of experimentally obtained statistical samples of the random variable breakdown voltage (dc and impulse), it has been established that the transition from gas to vacuum breakdown mechanism takes place in a relatively broad region, in which the gas breakdown mechanism of an anomalous Paschen type and the avalanche mechanism of vacuum breakdown are present simultaneously.     

Internal photoemission spectroscopy measurement of Alq3/cathode interface by three layered electron only device

We have investigated the Schottky barrier height for electrons at aluminum tris (8-hydroxyquinoline) (Alq₃)/cathode interfaces by internal photoemission (IPE) measurement. A three layered device consisting of ITO/TiO₂/intermediate layer (IL)/Alq₃/cathode structure was used to fabricate the “electron-only device” and to reduce the equivalent thickness of TiO₂ and IL stack. The measured barrier heights were 0.86, 1.05, 1.3 and 1.55 eV for MgAg, Al, Ag and Au electrodes, and it gradually decreased with external voltage and it was explained as Schottky effect. Barrier height showed linear relationship with work-function and electronegativity of cathode materials. The slope parameter of 0.6 with electronegativity was attributed to the interfacial charge transfer through the metal-induced gap states at the cathode/Alq₃ interface.     

Synthesis of boron-doped diamond films by DC plasma CVD using a CH4+CO2+H2 gas mixture at lower substrate temperature and formation of an n-Si/p-diamond heterojunction

Diamond films were synthesized by direct current plasma chemical vapour deposition using a CH₄+CO₂+H₂ gas mixture on Si substrates. The optimum deposition conditions were determined. It was found that 0.4 A/cm² current density, at applied voltage of 1 kV, resulted in good-quality diamond films. The substrate temperature was 750 K which is considerably lower than the conventional requirement of ∼1100 K. Boron doping was achieved by passing a portion of the gas mixture through boric acid dissolved in methanol. The boron-doped p-type diamond films were deposited on an n-type single crystalline Si substrate and an n-Si/p-diamond heterojunction was fabricated. The p-n junction was characterized in terms of current-voltage (I-V) and capacitance-voltage (C-V) measurements.     

Using a slit doser to probe gas dynamics during Al2O3 atomic layer deposition and to fabricate laterally graded Al2O3 layers

A special slit doser is used to form near unit steps in the spatial profile of an Al₂O₃ ALD film thickness. The unit step is formed as the Al₂O₃ ALD occurs mainly downstream from the slit doser because the trimethylaluminum and H₂O reactants are entrained in a viscous flow carrier gas. Spectroscopic ellipsometry measurements yielded thickness profiles of Al₂O₃ ALD on samples placed at different locations relative to the exit of the slit doser and the ALD growth zone. The effects of carrier gas flow rate, reactor pressure, and reactant dose and purge times on the Al₂O₃ ALD film profile provided details about the gas dynamics around the slit doser. Experimental indications of gas turbulence were observed at the exit of the slit doser. Lateral gradients in the Al₂O₃ ALD film thickness were also formed by linear translation of the sample relative to the slit doser during ALD. Lateral gradients of various desired pitches ranging from 119 Å/in to 444 Å/in were achieved as a result of accurate control of the Al₂O₃ ALD film thickness and small sample translation steps relative to the slit doser.     

Optical properties of TlInS2 layered single crystals near the absorption edge

The sample thickness effect on the optical properties of TlInS₂ layered crystals has been investigated at room temperature. The absorption coefficient of the samples calculated from the experimental transmittance and reflectance in the photon energy range of 1.10–3.10 eV has two absorption regions. The first is a long-wavelength region of 1.16–1.28 eV. The second region lies above 2.21 eV with a thickness-dependent indirect band gap. The energy gap decreases from 2.333 to 2.255 eV as the sample thickness increases from 27 to 66 μm. The differential spectra of absorption coefficient demonstrates the existence of a thickness-dependent impurity level being lowered from 2.360 to 2.307 eV as sample thickness increases from 27 to 66 μm.     

Thin polyaniline and polyaniline/carbon nanocomposite films for gas sensing

We have studied the gas sensing properties of five polyaniline-based materials—thick and thin PANI films, nanocomposite PANI/MWNT and PANI/SWNT films, and PANI nanogranules embedded in a polyvinylpyrrolidone matrix. The films (except for the latter) were deposited within the induction period of the polymerization process on gold interdigitated micro electrodes. Their sensitivity to NH₃, H₂, ethanol, methanol, and acetone was measured. The thin PANI film (~ 100 nm thick) prepared by a lift-off process had the sensitivity to ammonia below 0.5 ppm, which was higher than that of nanocomposite films. Two materials—thick PANI film and nanocomposite PANI/MWNT film—exhibited a shallow minimum in the temperature dependence of resistance (at 313 K and 319 K), which is a feature exploitable in practical applications, since the gas sensors should be insensitive to small temperature fluctuations at these temperatures.     

In2O3 films prepared by thermal oxidation of amorphous InSe thin films

In₂O₃ thin films were prepared by the thermal oxidation of amorphous InSe films in air atmosphere. The structure, morphology and composition of the thermal annealed products were characterized by X-ray diffraction (XRD), scanning electron microscopy and energy-dispersive spectroscopy, respectively. The XRD patterns indicate that the as-deposited InSe films were amorphous and they fully transformed into polycrystalline In₂O₃ films with a cubic crystal structure in the preferential (222) orientation at a temperature around 600 °C. The optical energy gap of 3.66 eV was determined at room temperature by transmittance and reflectance measurements using UV-vis-NIR spectroscopy. A preliminary characterization shows that these films have a promising response towards NO₂ gas at a working temperature around 180 °C.