Modeling of dynamic response of ferroelectric capacitors

Abstract

A simulation model of ferroelectric capacitors which describes both hysteresis loops under arbitrary voltage profile and time dependence of polarization change is developed based on the parallel-element model. In the model, a ferroelectric capacitor is assumed to consist of parallel capacitor elements with different coercive voltage and switching polarization. A new method of pulse measurement is designed to obtain the switching behavior of individual element. The measurement on a sol-gel SrBi₂Ta₂O₉ capacitor revealed that the switching time depended on the difference between the applied voltage and the coercive voltage of the capacitor element. The switching behavior is reproduced by inserting a nonlinear resistor in series with each capacitor in the model. All the parameters used in the model are determined from the measured data and no arbitrary fitting parameters are used.     

Improvement in the electrical properties of ferroelectric SrBi2Ta2O9 capacitors by electron beam irradiation on precursor films

Abstract

Ferroelectric SrBi₂Ta₂O₉ (SBT) capacitors were fabricated by the Electron-Beam-Induced Patterning process and their electrical properties were evaluated in detail. In this process, the dose of an electron beam irradiated on precursor films had a great influence on the electrical properties of the SBT capacitors. The appropriate electron dose significantly improved the electrical properties of the SBT capacitors although the excess electron dose made severe deterioration in the properties. The SBT capacitors fabricated with the optimum electron dose, 1.5 mC/cm² for Sr:Bi:Ta = 0.8:2.2:2.0 solutions, exhibited excellent ferroelectric properties: a remanent polarization of 11.5 μC/cm², a coercive field of 40 kV/cm, a leakage current of 8×10^?8 A/cm²@ 1V and fatigue-free up to 1010 cycles. It seems that such improvements were caused by the adjustment of Bi contents in the films and the modification or the decompositon of precursors before heat treatment by electron beam irradiation.     

Challenges for plasma etch integration of ferroelectric capacitors in FeRAM's and DRAM's

Abstract

The plasma etch process requirements are different for etching 2μm ferroelectric capacitor structures in FeRAM's (SRAM) vs. the smaller capacitor sizes (0.2–0.5 μm) of DRAM's. Plasma etch integration of ferroelectric capacitors presents three major differences between FeRAM's and DRAM's. The first difference is in the ferroelectric capacitor structure. FeRAM's use planar capacitors with top side metal contacts to vias while DRAM's use vertical capacitor structures with bottom side contact to a poly post structure. The second major difference is in material selected and thickness of layers. FeRAM's use thicker electrodes of Pt or Ir and a thicker PZT or Y1 dielectric layer. FeRAM's use a thick bottom electrode (and a thin top electrode) consisting of Pt, Ru or Ir and a thin BST dielectric layer. The third major difference is the plasma etch process requirements for the two devices. FeRAM's require a clean etch process and no corrosion. Profile is not critical but should be maintained at greater than 60° for 2μm bottom post electrode. An HRe^? (Highly Density Reflected Electron) etch system is used to develop process trends for ferroelectric capacitor applications.     

Fabrication and electrical properties of PC-PNZT-PVDF-GO composites

The objectives of this research are to fabricate and investigate new smart composites for the sensing and actuation applications in civil engineering. The fabrication and properties of cement-based piezoelectric ceramic composites are emphasized. However, cement-based piezoelectric composites are still difficult to obtain great electrical properties due to the evidence of some pores in the composites. Therefore, a novel approach to effectively improve their polarization of piezoelectric ceramic is to add a semiconductor (graphene oxide) and an insulator (polyvinylidene fluoride) phases between piezoelectric particles by the introduction of a small volume fraction of a third phase. Microstructure of the new composites was investigated using Scanning electron microscope (SEM). Dielectric permittivity and ferroelectric properties were then investigated.     

Phase formations and ferroelectric properties of PLT thin films by MOCVD

Abstract

La-modified lead titanate, Pb_1-x La _x TiO₃(PLT), thin films were prepared on Si[100] and Pt/SiO₂/Si substrates by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) method with the hot-wall type. The PLT films were deposited at 500°C with the low-pressure of 0.1 Torr, and then annealed at 650°C with an oxygen ambient for 10 minutes. Irrespective of substrate properties and La molar fractions, the films revealed the [100] preferred-orientation. With increasing the La mole %(up to 34%) in the films, the surface morphology improved, and the ferroelectricity and the leakage current density decreased. On the other hand, up to the La 22 mole%, the relative dielectric constant increased from 900 to 1200.     

Supression of size effects in ferroelectric films

Abstract

It is widely reported that the dielectric permittivity of ferroelectric films decreases with decreasing film thickness, and understanding and controlling these size effects are very important for charge storage application of these films. By combining phenomenological theory with careful experimental work, we have shown that the form of the boundary condition for the polarization plays a decisive role in the manifestation of size effects in ferroelectric films. We have taken two extreme boundary conditions to prove our point. For the case normal electrodes, it is assumed that the boundary condition for the component of polarization vector at the ferroelectric/electrode interface is P = 0. This case corresponds to the presence of a strong edge field, resulting in “freezing out” of the ferroelectric polarization at the interface and thus exhibiting severe size effects. However, if one utilizes conductive oxide electrodes that are ferroelectric in nature the polarization would not vanish at the ferroelectric/electrode interface and therefore the size effects are largely suppressed. To prove our point and to eliminate grain size, stress, and compositional effects, epitaxial SrTiO₃ thin films with stoichiometric composition on SrTiO₃ single crystal substrates were investigated. In fact, the experimental data also indicates that the use of ferroelectric electrodes indeed suppresses the size effects.     

Dielectric,ferroelectric, and piezoelectric properties of lead-free Ba0.95Ca0.05Ti1-xZrxO3 ceramics

Abstract

Ba_0.95Ca_0.05Ti_1-xZr_xO₃ (BCTZO) ceramics were prepared by a solid state reaction method. The samples were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM) and X-ray absorption near edge structure (XANES). The ceramics exhibit a pure perovskite structure. The average grain size gradually decreases with increasing Zr concentration. XANES results indicate that the intensities of pre-edge peaks dropped with increasing Zr concentration. The BCTZO ceramic of x?=?0.05 has the optimum electrical properties with the maximum dielectric constant (ε'_m), remanent polarization (2P_r), coercive electric field (2E_c) and piezoelectric charge constant (d₃₃) of 7,244, 12.54 (μC/cm²), 5.29 (kV/cm) and 288 (pC/N), respectively.     

Growth and electrical properties of (211) BaTiO3 thin films on Pt-coated Si(100) substrates

Abstract

Barium titanate (BaTiO₃) thin films with high (211) orientation have been prepared on Pt(111)/Si(100) substrates by R. F. magnetron sputtering at a substrate temperature between 550°C and 580°C in an Ar/O₂ atmosphere. The I-V curve of a thin film capacitor (Ag-BaTiO_3-Pt) has been measured and the C-V curves are obtained for frequencies between 100Hz and 1MHz. Neither the I-V curve nor the C-V curves are symmetrical and a very large change in the slope of all curves is found to occur at ～+0.5v.     

Structural,ferroelectric and magnetic properties of BiFeO3-ZnFe2O4 nano-composites

ABSTRACT

Multiferroic BiFeO₃-ZnFeO₃ nano-composites in different composition were prepared by sol-gel method. Detailed investigations were made on the structural, magnetic and ferroelectric properties of these nanocomposites. The X-Ray Diffraction (XRD) pattern confirms the formation of distorted perovskite and spinel phases of BiFeO₃ and ZnFe₂O₄ respectively. Transmission Electron microscopy reveals the particle size and the elemental idea of pure ferrites. The particle sizes calculated using TEM of ZnFe₂O₄ is 20–30 nm and match with XRD result. An enhancement of polarization in nano-composites is observed from Polarization Vs Electric Field loops. Magnetic polarization versus Magnetic field curves indicates the improved magnetic properties.     

并联电容器的谐波放大及对策

并联电容器是目前电网中普遍应用的无功补偿装置，用于提高功率因数，改善电能质量。由于电容器的阻抗呈容性，易与电力系统中的谐波产生相互影响，发生谐波的并联谐振和电容器对谐波电流的谐波放大，造成电容器和电气设备的损坏。通过实例分析了谐波对电容器的危害及并联电容器对谐波放大作用，应合理地配置电容器和电抗器，以避免电气参数匹配发生谐振，控制谐波电流放大。     

Substrate effect on in-plane ferroelectric and dielectric properties of Ba0.7Sr0.3TiO3 thin films

Heteroepitaxial Ba_0.7Sr_0.3TiO₃ thin films were grown on (LaAlO₃)_0.3(Sr₂AlTaO₆)_0.35 (001) (LSAT) and SrTiO₃ (001) (STO) single crystal substrates using pulsed laser deposition (PLD). X-ray diffraction characterization revealed a good crystallinity and a pure perovskite structure for films grown on both LSAT and STO substrates. The in-plane ferroelectric and dielectric properties of the films were studied using interdigital electrodes (IDE). The film grown on LSAT substrate exhibited an enhanced in-plane ferroelectricity, including a well-defined P-E hysteresis loop with the remnant polarization P _r = 10.5 μC/cm² and a butterfly-shaped C-V curve. Nevertheless, only a slim hysteresis loop was observed in the film grown on STO substrate. Curie temperature T _c of the film grown on LSAT substrate was found to be ∼105^∘C, which is nearly 70^∘C higher than that of the bulk Ba_0.7Sr_0.3TiO₃ ceramics. T _c of the film grown on STO substrate has almost no change compared to the bulk Ba_0.7Sr_0.3TiO₃ ceramics. The dielectric tunabilities were found to be 64% and 52% at 1 MHz for the films grown on LSAT and STO substrates, respectively.     

浅析变电站及配电网电容器容量的合理配置

论述了并联电力电容器在无功补偿设备容量不足的电网中所具有的提高电压质量和降低损失的双重作用。通过分析变电站和配电网的结构和负荷特点，对如何进行合理的无功补偿及经济合理配置电容器等问题加以探讨。     

Fabrication and characterization of β−FeSi2 thin films prepared by PLD method using Nd:YAG laser

β?FeSi₂ thin films were grown on Si(111) substrates by pulsed laser deposition (PLD) method using a Nd:YAG laser (λ=1064nm, laser energy=50mJ, laser energy density=1.65J/cm², repetition frequency=10Hz). In the fabrication process, three targets of (a) Fe(5N), (b) FeSi₂(3N), and (c) Fe(5N)+FeSi₂(3N) were used. The β?FeSi₂ thin films having the best properties of crystallinity were obtained in the case of (c), in which the first layer as the template was formed with the target of Fe(5N) and then, on top of that, the second layer was deposited with the target of FeSi₂(3N). At this time, it was found that by XRD measurement, the degree of crystallinity of the films of case (c) in which the first layer was introduced as the template improved 1.4 times as much compared with case (a), and that by SEM and AFM observations, surface morphologies also improved. Moreover, it was found that by TEM observation, the β?FeSi₂ thin films grew uniformly along the direction of (220) or (202) from the interface of the Si substrate and the film to the free surface and that by EDS analysis, the compositions of Fe and Si were uniformly distributed. © 2007 Wiley Periodicals, Inc. Electr Eng Jpn, 160(2): 39–45, 2007; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/ eej.20238     

An explainable framework for load forecasting of a regional integrated energy system based on coupled features and multi-task learning

To extract strong correlations between different energy loads and improve the interpretability and accuracy for load forecasting of a regional integrated energy system (RIES), an explainable framework for load forecasting of an RIES is proposed. This includes the load forecasting model of RIES and its interpretation. A coupled feature extracting strat egy is adopted to construct coupled features between loads as the input variables of the model. It is designed based on multi-task learning (MTL) with a long short-term memory (LSTM) model as the sharing layer. Based on SHapley Additive exPlanations (SHAP), this explainable framework combines global and local interpretations to improve the interpretability of load forecasting of the RIES. In addition, an input variable selection strategy based on the global SHAP value is proposed to select input feature variables of the model. A case study is given to verify the effectiveness of the proposed model, constructed coupled features, and input variable selection strategy. The results show that the explainable framework intuitively improves the interpretability of the prediction model.     

DRS数字继电器系统在发变组保护中的应用

七台河电厂采用的伊林公司生产的DRS数字继电器系统,不仅克服了由分立元件和晶体管元件构成的保护反映速度慢、维护量大的主要缺陷,而且具有完备的人机对话功能.对某些特殊的保护进行了详细的阐述,同时对调试过程中发现的问题进行了分析并加以改正.     

Electrical and mechanical properties of coaxial cable for use under high temperature and radioactive conditions

This research examines the effect of γ-ray irradiation at different temperatures (room temperature and 250°C) and atmospheric conditions (air and N₂) on the electrical and mechanical characteristics of thermoplastic polyimide (TPI) insulated and sheathed coaxial cable, which is designed for high-temperature, radioactive use. It was found that the TPI insulated and sheathed coaxial cable had good radiation resistance at 250°C under N₂, γ-ray irradiation of 75 MGy under air and electron beam irradiation of approximately 100 MGy under He. It was also found that both crosslinking and crystallization of TPI was accelerated by the synergistic effect of heat and γ-ray irradiation. © 1997 Scripta Technica, Inc. Electr Eng Jpn, 118 (2): 1–9, 1997     

基于综合矢量的功率定义及在无功和谐波电流检测中的应用

本文在综合矢量平面上定义了三相电路的有功功率及无功功率 ,以电压为参考 ,直接对三相瞬时电压、电流运算 ,获得三相电流的谐波及无功电流 ,该方法算法简单。仿真结果证明该方法具有满意的检测效果。本文中功率的定义不仅具有明确的物理意义 ,而且适用于谐波及无功电流的检测     

Barrier mechanism of Pt/Ta and Pt/Ti layers for SrTiO3 thin film capacitors on Si

Abstract

The barrier effect of Pt/Ta and Pt/Ti has been investigated, when used as bottom electrodes for SrTiO₃ thin film capacitors on Si. The Pt/Ta/Si stacks were more stable than the Pt/Ti/Si, both in vacuum and in oxygen annealing. Though the Pt/Ta bilayer was suitable for the SrTiO₃ deposition at 400[ddot]C, its resistivity became slightly higher after the deposition at 600[ddot]C, due to Ta layer oxidation during the SrTiO₃ deposition. This would result in a contact resistance problem for high density dynamic random access memory application.     

核壳结构Co3O4水热法制备及其电化学性能

以硝酸钴为原料,柠檬酸三钠为模板,六次甲基四胺为成沉淀剂水热制备了核壳结构Co3O4,X射线衍射(XRD)、扫描电镜(SEM)测试表明,柠檬酸三钠的加入使制备的Co3O4呈现核壳状结构,循环伏安等电化学研究表明该材料的电化学电容性能较好,单电极比电容达到333 F/g。     

脱硫灰渣排放方式与综合利用

脱硫灰渣作为火电厂产生的一种新型的固体废弃物,其组成和性能与其排放方式有着密切的关系。为了使其得到较好的处置与利用,本文主要从排放方式加以探讨,叙述了各种脱硫灰渣的性能与综合利用前景。