The dissociation process in plasma-enhanced chemical vapor deposition using tetraethoxysilane

Dissociation in plasma-enhanced chemical vapor deposition for SiO₂ deposition using tetraethoxysilane (TEOS) was investigated by means of mass spectrometry. First we obtained the basic dissociation patterns of TEOS by electron impact. It was shown that TEOS was dissociated by electron impact at low electron energies below 7 eV, removing the ethyl group (C₂H₅). Next we determined dissociation patterns in TEOS/He plasma in order to eliminate the effect of oxidation. Finally, dissociation in TEOS/O₂ plasma was investigated. It was found that oxidation plays an indispensable role in the deposition of high-quality SiO₂ films due to the decrease in high-molecular-weight compounds with carbon and hydrogen, although TEOS is highly dissociated by electron impact. © 1999 Scripta Technica, Electr Eng Jpn, 129(4): 32–38, 1999     

Lead zirconate titanate thin films on ruthenium dioxide; in situ synthesis using organometallic chemical vapor deposition

Abstract

In this paper the organometallic chemical vapor deposition (OMCVD) of RuO₂ using the precursor ruthenocene, Ru(C₅H₅)₂, will be discussed. Stoichiometric RuO₂ thin films with a specific resistivity of about 50 μΩcm were obtained both on strontium titanate and platinized silicon wafers at temperatures between 300–700°C. PbZr_0.8Ti_0.2O₃ thin films were in situ deposited onto these RuO₂ electrodes. The ferroelectric behavior of the films obtained on the RuO₂ electrodes is compared with those obtained on platinum electrodes. Attempts to deposit in-situ a RuO₂ top electrode on the PbZr_0.8Ti_0.2O₃ were unsuccessful.     

Evaluation of microscopic structural randomness in SiO2 by analysis of photoluminescence decay profiles

Microscopic structural randomness in SiO₂, a typical electrical insulating material, was evaluated by observing the decay profile of the photoluminescence due to oxygen vacancies (≡Si-Si≡). As samples with different degrees of randomness, an ion-implanted thermal SiO₂ film, SiO₂ films formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane with and without doped fluorine, a buried oxide film prepared by SIMOX (separation by ion-implanted oxygen), and a bulk silica glass prepared by the soot-remelting method were tested. By analyzing the decay profile with a stretched exponential function, it was found that the deviation of the decay profile from a single exponential function is larger in the samples whose infrared absorption properties and HF etch rate suggest greater structural randomness. © 1997 Scripta Technica, Inc. Electr Eng Jpn, 119 (3): 1–6, 1997     

Preparation and characterization of SrBi2Ta2O9 thin films by low-oxygen-concentration annealing technique

SrBi₂Ta₂O₉ thin films were successfully prepared at a low annealing temperature using a low-oxygen-concentration annealing technique. It was possible to obtain a single perovskite phase at 600 °C in 0.7% oxygen concentration and fluorite phase was observed at 600 °C in 100% oxygen. In addition, the SrBi₂Ta₂O₉ thin films annealed at 650 °C in 0.7% oxygen were well crystallized and composed of dense crystal grains with a size of 70 nm. The remanent polarization and leakage current density of the SrBi₂Ta₂O₉ thin film obtained using this new technique were 7 μC/cm² and 3 × 10⁻⁹ A/cm² (at 5 V), respectively. The final remanent polarization after 10⁹ switching cycles was nearly constant. © 1999 Scripta Technica, Electr Eng Jpn, 129(4): 1–6, 1999     

Effects of the Ga-doping concentration on the characteristics of Zn<Subscript>0.7</Subscript>Mg<Subscript>0.3</Subscript>O thin films deposited by metal-organic chemical vapor deposition using an ultrasonic nebulization

Ga-doped Zn_0.7-xMg_0.3O thin films were deposited on glass substrates at 350 °C by metal-organic chemical vapor deposition using an ultrasonic nebulization technique to transport the source precursors, and the effects of the Ga-doping concentration were investigated. The films with Ga-doping concentrations less than 5 mol% grew with [001] preferred orientation perpendicular to the substrate surface and were composed of large crystallites. At Ga content greater than 5 mol%, the films grew with random orientation and very small crystallite size. The charge carrier concentration in the films increased rapidly up to 4 mol% Ga and then decreased gradually with further increases in the Ga-content. The film resistivity decreased with increasing Ga-content up to 4 mol% due mainly to the increase in charge carrier concentration. Then, the resistivity increased gradually with increasing Ga-content due to the decrease in mobility. The lowest resistivity of the Ga-doped Zn_0.7-xMg_0.3O thin film was 3.8?×?10^?1 Ωcm at the Ga doping concentration of 4 mol%. The mean transmittance in the visible range was more than 85% in all films. The optical band gap of the films increased with increasing Ga-doping concentration up to 5 mol% due to the Burstein-Moss effect.     

Formation mechanisms of paramagnetic defect centers induced by excimer lasers,gamma rays,and mechanical fracturing in amorphous SiO2

The formation mechanisms of paramagnetic defect centers in amorphous SiO₂ induced by excimer lasers, ⁶⁰Co γ rays, and mechanical fracturing were investigated. Correlation between the paramagnetic defect centers and their precursors introduced during manufacture is discussed for the cases of excimer lasers and γ rays. For the case of mechanical fracturing, formation of strained Si·O·Si bonds as well as paramagnetic defects is examined. The mechanism of laser- or γ-ray-induced paramagnetic defect centers is compared with that of fracture-induced centers. © 1998 Scripta Technica, Inc. Electr Erg Jpn, 121(3): 9–19, 1997     

Effect of substrate surface modification using Ag nano-dots on the improvement of J c and microstructures in YBa2Cu3O7 thin films grown on LaAlO3 (100) by pulsed laser deposition

YBa₂Cu₃O₇ (Y123) thin films were grown by pulsed laser deposition (PLD) on LaAlO₃ (100) substrates whose surfaces were modified by a discontinuously layer of Ag nano-dots. The Y123 films were characterised by atomic force microscope, X-ray diffraction, scanning electron microscope, and DC magnetization measurements. Effect of substrate surface modification using various densities of the Ag nano-dots on the improvements of critical current density J _c and microstructures in the Y123 films has been studied systematically. The results showed that at fixed physical deposition conditions J _c increased with the number of Ag shots, n. Zero field J _c at 77 K increased from 10⁶ to 3.3 × 10⁶ A/cm², and from 1.5 × 10⁷up to 4 × 10⁷A/cm² for 5 K as the number of Ag shots increased from zero to 150. However, a fluctuation of J _c was observed for n < 60 at 77 and 40 K in both low and high fields. Detailed microstructure analysis revealed that ab misalignment was gradually improved as Ag nano-dots density gradually increased and believed to be responsible for the J _c enhancement.