中国薄膜电池技术与发展概况(上)

一前言光伏发电是未来能源体系的重要组成部分,高效率、高稳定性、低成本是太阳电池发展的基本原则。提高光电转换效率、太阳电池薄膜化、生产制造低能耗、组件生产规模化连续化、缩短产业链均是降低电池成本的有效途径。     

效率为12.1%的Cu(In,Ga)Se2薄膜太阳电池

利用共蒸发的三步法制备了较高质量的四元化合物Cu(In，Ga)Se2(CIGS)薄膜，并采用Mo／CIGS／CdS／ZnO结构为基础做出转换效率超过10％的薄膜太阳电池，其最高转换效率达到12．1％(测试条件为：AM1．5，Global 1000W／m^2)。通过与国际最高水平的CIGS太阳电池各参数的比较，分析了我们所制备的CIGS太阳电池在工艺和物理方面存在的问题。     

薄膜太阳电池系列讲座(8) CIGS薄膜太阳电池(下)

③柔性CIGS电池的卷-卷(Roll-to-Roll)制备工艺CIGS薄膜电池制备在柔性衬底上,使其可能采用卷绕式(Roll-to-Roll)生产工艺。几百米甚至上千米长的电池一次完成[9],卷对卷工艺可降低设备造价和占地面积,同时有效提高生产效率。卷对卷工艺设备局部示意图如图16所示。在CIGS薄膜电池工艺流程中,在分切成外联要求的单个电池     

Manz创纪录的薄膜技术在EU PVSEC 2011展出

9月5～8日,第26届EUPVSEC展览会在德国汉堡举行。高科技产业整合解决方案供应商Manz在本届展会上展出了其最新的晶体硅太阳电池和薄膜光伏组件的生产设备产品系列。Manz此次展出的重点是CIGS薄膜技术所取得的最新突破。Manz是可供应量产并获利的CIGS太阳电池组件交钥匙生产线的制造商。Manz将在此次展会上再次展示其CIGSfab的实力——薄膜模块达到前所未有15.1%的转换效率,     

薄膜太阳电池系列讲座(23) 染料敏化电池(上)

一引言随着社会进步,能源与环境的发展状况日益显示出其重要的作用。现代文明的基础是充足的清洁能源的供应,才能避免因日益增长的能源需求而造成的环境污染和生态平衡破坏。要使日渐枯竭的化石能源得到有效地利用,尽量延长其使用寿命,减少对社会进步不良的影响,尽量少用才     

非晶硅薄膜电池的历史、现状和发展中的主要问题

对非晶硅薄膜太阳能电池的历史和现状进行了总结,指出了目前非晶硅薄膜太阳能电池存在的主要问题是转换效率低和严重的光致衰减效应,对解决这些问题的一些技术进行了探讨,认为非晶硅薄膜太阳能电池有很大的发展潜力,将与晶体硅和其他新兴太阳能电池三分天下。     

SOI材料上硅薄膜电池的研究

用注氧隔离法在单晶硅衬底中形成SiO2隔离层,制备成SOI(SiliconOnInsulator)衬底,用快速化学汽相沉积(RTCVD)法在此衬底上制备硅薄膜,热扩散形成PN结,制备成薄膜太阳电池,电池表面钝化及减反膜采用的是等离子增强化学气相沉积(PECVD)方法制备的SiN,薄膜电池的电极全部由正面引出,制成的23μm厚薄膜电池的光电转换效率为8 12%(1×1cm2,AM1 5,23℃)。扩展电阻的测量表明电池有良好的PN结特性;量子效率测量表明SiN比常规的热氧化SiO2有更好的减反射和钝化作用;电池的暗特性表明电池具有较高的串联电阻,并分析了正面引电极对串联电阻的影响。     

薄膜技术迎来发展机遇

在众多的非晶硅光伏电池技术中,薄膜太阳能电池技术最接近大规模产业化。未来两年,薄膜技术的进步、转换率的提高将逐渐凸现薄膜太阳能电池的成本优势。受硅材料的限制,各大厂商已开始转而采用薄膜技术。2009年这种趋势将更加明显,这将促使薄膜技术的成熟期大大提前。虽然短期内薄膜技术不能完全取代晶体硅技术,但凭借成本优势。薄膜技术市场份额将会迅速上升,迎来发展的春天。     

2020年中国光伏技术发展报告——晶体硅太阳电池研究进展（1）

本章详细介绍了PERC太阳电池技术、大硅片技术、Topcon太阳电池技术、非晶硅/晶体硅异质结(HJT)太阳电池技术、n型全背电极太阳电池技术,以及组件技术、封装材料技术的研究进展及产业化进程。     

硅薄膜太阳电池制备技术发展概况

薄膜太阳电池是缓解能源危机的新型光伏器件。作为应用最为广泛的硅基薄膜太阳电池,本文主要总结硅薄膜电池的制备工艺和制备方法,讨论了不同陷光结构对太阳电池性能的影响,介绍了最新高效太阳电池的制备方法,并展望硅薄膜太阳电池的发展趋势。     

CdTe thin film solar cells: device and technology issues

Polycrystalline thin film CdTe continues to be a leading material for the development of cost effective and reliable photovoltaics. Thin film CdTe solar cells and modules are typically heterojunctions with CdS being the n-type partner, or window layer. The preferred configuration for CdTe solar cells is the superstrate structure. The cadmium chloride heat treatment, the back contact formation process, and the utilization of resistive, buffer layers in tandem with a thin cadmium sulfide window layer, are important areas of research in thin film CdTe solar cells. This paper reviews work on CdTe thin film solar cells sponsored by the National Renewable Energy Laboratory. Results for a vapor chloride heat treatment with high throughput characteristics, a dry back contact process, and a comparative study of resistive buffer layers and their effect on the performance of CdTe solar cells are presented.     

Status of thin film solar cells in research, production and the market

Photovoltaics is one of the fastest growing industries at present. Over the last five years, the production of photovoltaic solar cells has steadily increased at an annual average of 40%, driven not only by the progress in materials and processing technology, but by market introduction programmes in many countries around the world. This growth is mainly being attained by an increase in manufacturing capacities based on the technology of crystalline, single junction devices. Consistent with the time needed for any major change in energy infrastructure, another 20–30 years of sustained and aggressive growth will be required for photovoltaics to substitute a significant share of conventional energy sources. The question is whether a switch will be possible with the current technologies alone or whether this growth will only be possible with the continuous introduction of new technologies. It leads us to the search for new developments with respect to material use and consumption, device design and production technologies as well as new concepts to increase overall efficiency. This paper analyses the current status of thin film solar cells and their outlook for future developments.     

太阳能光伏制冷技术(下)

四技术发展和应用现状1太阳能光伏空调(1)独立光伏空调合肥工业大学于1991年11月～1995年12月由余世杰、曹仁贤等[5]进行了独立光伏空调及其制冷技术的研究,提出了光伏空调系统各参量的优化配置方法,对光伏空调系统电池阵列最佳倾角的定义进行了阐述.     

太阳能制冷讲座(5) 太阳能吸附制冷技术(下)

<正>五太阳能吸附空调研究及实例太阳能吸附制冷在过去的二三十年里开始被广泛研究。太阳能吸附制冷的实验研究也开始逐渐增多。1986年,Pons和Guillemiont使用6m~2的集热器驱动吸附机制冰,在太阳辐射达到22MJ/(m~2·d)时,每天可制得冰块30～35kg。     

Chalcopyrite thin film solar cells by electrodeposition

This paper reviews the state of the art in using electrodeposition to prepare chalcopyrite absorber layers in thin film solar cells. Most of the studies deal with the direct preparation of Cu(In,Ga)Se₂ films, and show that the introduction of gallium in the films is now becoming possible from single bath containing all the elements. Electrodeposition can also be used to form precursor films with stacked layer structures, of pure elements or of combinations with binary or even ternary films. Thermal annealing treatments are of dramatic importance to provide suitable electronic quality to the layers. They are often done in the presence of a chalcogen (selenium or sulfur) over pressure and there is a tendency to use rapid thermal processes. Less studies are devoted to complete solar cell formation. Significant progresses have been made in the recent period with several groups achieving cell efficiencies around 8–10% on different substrates. A record efficiency of 11.3% is reported for a cell with an absorber presenting a band gap of 1.47 eV. First results on the manufacturability of the corresponding process to large areas are presented.     

铜铟硒多晶薄膜太阳电池的制备技术

简述了铜铟硒多晶薄膜太阳电池的研究现状，讨论了其制备技术及其特点，给出了进一步研究和要解决的现存问题。     

Open-circuit analysis of thin film heterojunction solar cells

A new technique is proposed for the calculation of the width W of space charge region and consequently the concentration of uncompensated acceptors N_A–N_D, which is based on the open-circuit analysis of thin film heterojunction solar cells illuminated by monochromatic light with the wavelength within photosensitivity region. The proposed method was simulated under different values of the theoretically considered parameters (ideality coefficient n, saturation current I₀ and shunt resistance R_sh) of a CdS/CdTe heterojunction solar cell. The calculated values of W and N_A–N_D were established to be dependent on the mentioned above electrical parameters.     

2D-numerical analysis and optimum design of thin film silicon solar cells

Device modeling for p–i–n junction μc-Si basis thin film polycrystalline Si solar cells has been examined with a simple model of columnar grain structure and its boundary condition utilizing two-dimensional device simulator. As the simulation results of solar cell characteristics show, open-circuit voltage (V_oc) and curve fill factor (FF) considerably depend on those structural parameters, while short-circuit current density (J_sc) is comparatively stable by courtesy of homogeneous built-in electric field in the i layer. It has also been found that conversion efficiency over 12% could be expected with 1 μm grain size and well-passivated condition with 3 μm thick i-layer.