AFP单克隆抗体的研制及其在免疫分析中的初步应用

获得了四株分泌ＡＦＰ（甲胎蛋白）单克隆抗体的杂交瘤细胞株并已稳定传代。其中Ａ４Ａ１１、Ａ１４Ｃ１１在ＡＦＰ ＩＲＭＡ中得到了很好的配对，经ＲＩＡ鉴定其滴度分别为１：８００００和１：１５０００，亲和常数分别为１．７×１０＾９Ｌ／ｍｏｌ和１．４×１０＾１０Ｌ／ｍｏｌ。Ａ１４Ｃ１１作为包被抗体应用于ＡＦＰ ＥＬＩＳＡ中也得到较好的结果。     

北京正负电子对撞机控制系统及其改进

北京正负电子对撞机（ＢＥＰＣ）建造于１９８４－１９８７年，用于高能物理实验和同步辐射应用，它由１．４ＧｅＶ电子直线加速器，ｅ＾＋，ｅ＾－输运线和２．８ＧｅＶ电子储存环组成，在控制系统方案设计阶段考虑到建造时间紧迫及人力缺乏，系统采用了（美）ＳＬＡＣ新ＳＰＥＡＲ控制系统结构。我们在引进硬件设备和软件系统的基础上，按照ＢＥＰＣ调束的要求，经过改造创新建成了现在的ＢＥＰＣ控制系统。该系统自１９８７年底投     

SPECT脑血流灌注显像应用于脑血管疾病

７０例脑血管疾病患者（脑梗塞、ＴＩＡ、ＶＢＩ）行＾９９ｍＴｃ－ＥＣＤ ＳＰＥＣＴ脑血流灌注显像，并与ＣＴ、ＭＲＩ对照，结果ＳＥＰＣＴ诊断脑血管病的阳性率为９０％。ＣＴ为８８．２％（４５／５１），ＭＲＩ为９０％（２７／３１）。脑梗塞５５例中５１例ｒＣＢＦ图像上出现血流灌注减低区，４例发现交叉性小脑神经机能失联络证。诊断ＴＩＡ、ＶＢＩ的阳性率为７５％。ＳＰＥＣＴｒＣＢＦ显像发现病灶较ＣＴ、ＭＲＩ多；可     

DHDECMP-TBP/煤油从模拟高放废液中萃取回收Am-Gd的研究

研究了ＤＨＤＥＣＭＰ－ＴＢＰ／煤油萃取Ａｍ＾３＋、Ｇｄ＾３＋的各影响因素,在单级萃取实验的基础上,用０．６０ｍｏｌ／ＬＤＨＤＥＣＭＰ－１．４０ｍｏｌ／ＬＴＢＰ／煤油为有机相对模拟高放废液进行了逆流串级萃取实验降流串级反萃实验,成功地从模拟高放废液中分离回收了Ａｍ＾３＋和Ｇｄ＾３＋。     

85 MeV19F离子辐照InP正电子湮没研究

用正电子湮没寿命技术研究了注量为１．６＊１０＾１６ＣＭ＾－２Ｒ ８５ＭｅＶ＾１９Ｆ离子辐照ＩｎＰ产生的辐照效应。实验表明辐照在ＩｎＰ中产生单空位型缺陷。     

A DYNAMIC FOOD CHAIN MODEL FOR HONG KONG BASED ON RADFOOD MODEL AND BIRCHALL－JAMES ALGORITHM

Ａ　ＤＹＮＡＭＩＣ　ＦＯＯＤ　ＣＨＡＩＮ　ＭＯＤＥＬ　ＦＯＲ　ＨＯＮＧ　ＫＯＮＧ　ＢＡＳＥＤ　ＯＮ　ＲＡＤＦＯＯＤ　ＭＯＤＥＬ　ＡＮＤ　ＢＩＲＣＨＡＬＬ－ＪＡＭＥＳ　ＡＬＧＯＲＩＴＨＭＫ．Ｎ．Ｙｕ（余君岳）；Ｋ．Ｐ．Ｎｇ（吴国斌）；Ｔ．Ｃｈｅｕｎｇ（...     

CONCLUSION OF INTERNATIONAL SYMPOSIUM ON NUCLEAR ENERGY AND THE ENVIRONMENT AT BEIJIN ON 14～18 OCT.1996

ＣＯＮＣＬＵＳＩＯＮＯＦＩＮＴＥＲＮＡＴＩＯＮＡＬＳＹＭＰＯＳＩＵＭＯＮＮＵＣＬＥＡＲＥＮＥＲＧＹＡＮＤＴＨＥＥＮＶＩＲＯＮＭＥＮＴＡＴＢＥＩＪＩＮＯＮ１４～１８ＯＣＴ．１９９６Ｂ．Ｇ．Ｂｅｎｎｅｔ（ＵＮＳＣＥＡＲ）Ｗｅｈａｖｅｃｏｍｅｔｏｔｈｅｅｎ...     

DHDECMP-TBP-煤油协同萃取Am(Ⅲ)和Gd(Ⅲ)机理的研究

研究了ＴＢＰ－煤油,ＤＨＤＥＣＭＰ－煤油,ＤＨＤＥＣＭＰ－ＴＢＰ－煤油从０．０５ｍｏｌ／Ｌ ＮＨＯ３－５．０ｍｏｌ／ＬＮａＮＯ３,介质中萃取Ａｍ＾３＋,Ｇｄ＾３＋的机理,其萃合物分别为;Ａｍ（ＮＯ３）３．３ＴＢＰ,Ｇｄ（ＮＯ３）３．３ＴＢＰ,Ａｍ（ＮＯ３）３．３ＣＭＰ,Ｇｄ（ＮＯ３）３,３ＣＭＰ,Ａｍ９ＮＯ３０３．３ＣＭＰ．ＴＢＰ和Ｇｄ（ＮＯ３）３．２ＣＭＰ．ＴＢＰ,并测得了各反应的平衡常数Ｋ和热     

MONTE CARLO CALCULATION FOR CALIBRATION FUNCTIONS IN TOTAL REFLECTION X－RAY FLUORESCENCE SPECTROMETR

ＭＯＮＴＥ　ＣＡＲＬＯ　ＣＡＬＣＵＬＡＴＩＯＮ　ＦＯＲ　ＣＡＬＩＢＲＡＴＩＯＮ　ＦＵＮＣＴＩＯＮＳ　ＩＮ　ＴＯＴＡＬ　ＲＥＦＬＥＣＴＩＯＮ　Ｘ－ＲＡＹ　ＦＬＵＯＲＥＳＣＥＮＣＥ　ＳＰＥＣＴＲＯＭＥＴＲＹＦａｎＱｉｎｍｉｎ（范钦敏）；ＬｉｕＹａｗｅｎ（...     

GaP高能重离子辐照损伤及退火的正电子湮没研究

用正电子湮没寿命技术研究２．４＊１０＾１５／ｃｍ＾２和２．２＊１０＾１６／ｃｍ＾２ ８５ＭｅＶ＾１９Ｆ离子辐照ＧａＰ的辐照损伤及其退火效应。结果表明,高低两种注量辐照在ＧａＰ中产生浓度较高的单空位。在３００－１０２３Ｋ温度范围内测量了正电子湮没寿命温度的变化。低注量辐照品在退火过程中有双空位的形成;而高注量辐照样品中观察到比双空位更复杂的缺陷形式,其完全被退火的温度比低剂量辐照的高２５０Ｋ。     

A positron moderator using porous metal

Two types of porous metal moderators (i.e. porous nickel layer and multi-wire tungsten layer) are proposed and tested on a slow positron beam line. A moderation efficiency of about 2×10-4 has been achieved, which is higher than that for W vane geometry moderator by a factor of 4.     

Transient Radiation Response of Complementary-Symmetry MOS Integrated Circuits

Complementary-symmetry MOS (CMOS) integrated circuits were subjected to a sub-microsecond burst of high intensity ionizing radiation using 10-MeV electrons from a LINAC. The results show that, at peak doserate values of less than 8 × 108 rads (Si)/s, the transient change in output voltage of a CMOS inverter is small and can be attributed simply to the net junction photocurrent flowing at the output node. At dose rates in excess of 8 × 108 rads (Si)/s, however, a new type of response comes into play and the transient change in output voltage becomes very large, approaching the operating voltage. In some instances, this change can result in a non-destructive temporary latch-up condition. The results suggest that this condition is caused by a parasitic effect, namely the interaction of the P-well, the source-drain diffusions, and the protection diodes that constitute a four layer structure.     

Operational Experiences of Fast Neutron Source Reactor “YAYOI” as Pulsed Fast Reactor

University of Tokyo research reactor “YAYOI” is intended to be operated as a dynamic fast neutron source reactor as well as a stationary one. It is equipped with reactivity adding devices with both slow and quick action, and a LINAC PNS (Pulsed Neutron Source) to be operated with the devices mentioned above. The unique idea of fly-through type pulse reactivity addition into the core lends itself to minimizing thermal shock problems pertaining to fast burst reactors thereby increasing safety of a single shot type burst reactor.

Operational experiences of YAYOI obtained during the dynamic testing of super critical state are described here with some explanation of design aspects of YAYOI as a fast pulsed reactor.

Throughout present experiments, the super prompt critical state reactivity of about up to 29 cents was realized for YAYOI core, and it was confirmed that the sizes of pulse power were well controllable with this reactivity pulser (R-P) mode pulse operation.     

Study by positron annihilation of radiation damage in an aluminium collimator of a 30 MeV electron linac

A positron annihilation lineshape study was made of samples cut from an aluminium commercial alloy collimator of a 30 MeV electron LINAC. The same material was studied after 60% deformation and both measurements were compared with the results of deformed pure aluminium samples. It was concluded that after irradiation, in addition to dislocations other trapping centres also have to be present. The annealing behaviour of the different samples is discussed.     

BEI-1电子直线加速器定时触发系统

本文介绍了一个完整的全集成电路化的定时触发系统,用于双功率源馈送功率BEI-1电子直线加速器中。它是由七个专用NIM标准插件组成,即:同步、异步基准脉冲发生器,用于电子枪、行波管、速调管调制器、能量倍增器的延迟放大电路以及快速保护电路。这套系统在BEI-1电子直线加速器上能正常运行,证明它的各项性能达到了设计指标。     

钠冷快堆一回路主循环泵在厂外主辅电源切换工况下的运行特性研究

在厂外主辅电源切换时,为避免因一回路主循环泵（简称主泵）运行引起反应堆保护停堆或电机辅助绕组启动,对主泵惰转特性及转速控制进行分析,分别对快切和慢切工况下主泵的快速飞车启动和搜频飞车启动模式进行研究,给出了不同模式下主泵的最低转速预测模型,分析出了快切工况（断电1.5 s）下主泵最低转速为708.3 r/min,慢切工况（断电10 s）下最低转速为341.2 r/min。在主泵水台架上,用1.5 s和10 s断电试验来模拟厂外主辅电源快切和慢切工况,试验结果表明,快切工况下主泵最低转速为689r/min;慢切工况下主泵最低转速为346.7 r/min。最低转速预测值与试验值吻合较好,偏差小于3%。试验验证了主泵在主辅电源切换工况下的运行特性,可实现快切不导致反应堆保护停堆,慢切不导致辅助绕组启动,对反应堆安全运行具有指导意义。     

用单能慢正电子束测量Si中的正电子迁移率

用单能慢正电子束流作为探针,测量了Ｐ型Ｓｉ中不同Ｂ杂质浓度的正电子湮没Ｓ参数和正电子能量的函数关系。在实验上系统地研究了正电子扩散长度和迁移率随半导体中杂质浓度的变化规律,观察到杂质的掺入不影响缺陷的开体积,但正电子在硅中的迁移率随杂质浓度的增加而减小。     

用成像板探测正电子

用成像板对常用正电子源＾３２Ｎａ进行了一系列感光实验。结果显示,激发辐射的光子强度值ｆ（ｐ）与成像板记记载的正电子流强ｆ（ｅ＾＋）成正比关系。在北京慢正电子束设备上进行了单慢正电子的感光实验,结果表明,成像板是慢正电子的一种优良的二维位置灵敏探测器。     

Transient Response of GaAs IC's to Ionizing Radiation

Transient responses of GaAs E-JFET planar integrated circuits caused by a 25 ns wide ionizing radiation pulse from a LINAC were measured. Present technology circuits with 2.5 ?m channel length devices have a measured logic upset level of about 1 × 1010 rad(GaAs)/s and a survival dose rate of approximately 1 × 1011 rad(GaAs)/s. A theoretical analysis for logic upset dose rate and a correlation of experimental results with theory is presented. For E-JFET devices with a channel length of 1 ?m, a logic upset dose rate of 1 × 1011 rad(GaAs)/s is predicted.     

High-intensity variable-energy positron beam for surface and near-surface studies

We report on the construction and performance of a magnetically confined slow positron beam. The beam is designed for surface physics and near-surface disorder studies and it operates in ultrahigh vacuum with a base pressure of 3 nPa. The beam uses a Co-58 source with a backscattering W(110) single crystal moderator. We get 4.7 × 10⁶ slow positrons per second striking the sample using a 300 mCi source corresponding to a fast-to-slow positron conversion efficiency 0.28 ± 0.02%. The energy of the incident positrons can be varied from 1 eV to 35 keV. Some applications concerning positron re-emission and diffusion as well as positronium desorption from a surface state are shown.