A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters

The transmission-line model with radial and rectangular geometry of contact pads has been used to study the contact systems Cr-Au, Cr-Au-Ag-Au, Ti-Pt-Au, Pt-Ti-Pt-Au, Pt-Au, Ti-Au, Ti-Pt-Ag, Ti-Pt-Ag-Au, and Pt-Ag deposited on the p-GaSb surface by the methods of magnetron sputtering and resistive evaporation. It is established that the contact systems Ti-Pt-Ag-Au and Ti-Pt-Ag exhibit the smallest values of the specific contact resistance (ρ _c ≤ 10⁻⁶ Ω cm²), which makes it possible to use these systems in fabrication of photovoltaic converters generating photocurrents with densities as high as 15 A/cm².     

Effect of moisture condensation on long-term reliability of crystalline silicon photovoltaic modules

Moisture condensation (MC) can occur in photovoltaic (PV) modules in hot and humid climates, and the resulting water droplets can cause more areas of corrosion. Therefore, in this study, MC history of PV modules exposed to Miami climate (FL, USA) has been derived employing corresponding meteorological data. The duration of MC versus temperature of PV module (T_module) was calculated over 1 year. Furthermore, five types of accelerated tests were conducted to develop a MC-induced degradation prediction model. The thermal activation energy, 0.4524 eV, was calculated. The Brunauer–Emmett–Teller (BET) model was used to predict the degradation rate. The accumulated degradation rate of a PV module exposed to the accelerated condition of MC was 1.45 times greater than that of damp heat (DH). The effect of encapsulant materials on the frequency of MC and accumulated degradation rate over 1 year were calculated in the Miami climate.     

Estimation of the degradation rate of multi-crystalline silicon photovoltaic module under thermal cycling stress

The overall power of an outdoor-exposed photovoltaic (PV) module decreases as a result of thermal cycling (TC) stress, due to the formation of cracks between the solder and metal. In this study, the thermal fatigue life of solder (62Sn36Pb2Ag) interconnection between copper and silver metallization in PV module was studied. This paper describes in detail the degradation rate (R_D) prediction model of solder interconnection for crystalline PV module. The R_D prediction model is developed which based on published constitutive equations for solder and TC test results on actual PV module. The finite element method was employed to study the creep strain energy density of solder interconnections in TC conditions. Three types of accelerated tests were conducted to determine the prediction model parameters. R_D in benchmark condition is predicted and compared with those of TC conditions.     

Durability of Pb‐free solder between copper interconnect and silicon in photovoltaic cells

The thermal cycling durability of large‐area Pb‐free (Sn3.5Ag) solder between silicon semiconductor and copper interconnects in photovoltaic (PV) cells is assessed and compared to benchmark results from Pb‐based (Sn36Pb2Ag) PV cells. Accelerated thermal cycling tests have been conducted on PV cells of both solder compositions, and the increase in series resistance due to interconnect damage has been characterized using in situ dark I–V measurements. Both the Pb‐free and Pb‐based cells show a steep initial rise followed by a steady rate of increase in degradation histories, with the Pb‐free cells showing a more pronounced ‘knee’ in the degradation curves. Extrapolation of the degradation data for both solders suggests that Pb‐free cells are four times more durable than the Pb‐based cells at the test condition. This superior thermal cycling fatigue durability of Pb‐free cells was also confirmed with physics of failure (PoF) analysis, consisting of nonlinear finite element (FE) stress analysis and an energy‐partitioning (E‐P) solder fatigue model. FE models error‐seeded with manufacturing voids in the solder interconnect predicted a significant reduction in the thermal cycling durability with increasing solder void density. However, even the most voided Pb‐free cells modeled are predicted to be twice as durable as void‐free Pb‐based cells, under the accelerated temperature cycle used in the test. The acceleration factor (AF) predicted by the PoF analysis for a typical service environment is three times higher for Pb‐free cells than that for Pb‐based cells. Copyright © 2010 John Wiley & Sons, Ltd.     

Multistage performance deterioration in n-type crystalline silicon photovoltaic modules undergoing potential-induced degradation

This study addresses the behavior of n-type front-emitter (FE) crystalline-silicon (c-Si) photovoltaic (PV) modules in potential-induced degradation (PID) tests with a long duration of up to 20 days. By PID tests where a negative bias of −1000 V was applied at 85 °C to 20 × 20-mm²-sized n-type FE c-Si PV cells in modules, the short-circuit current density (J_sc) and the open-circuit voltage (V_oc) started to be decreased within 10 s, and strongly saturates within approximately 120 s, resulting in a reduction in the maximum output power (P_max) and its saturation. After the saturation, all the parameters were almost unchanged until after 1 h. However, the fill factor (FF) then started to decrease and saturated again. After approximately 48 h, FF further decreased again, accompanied by a reduction in V_oc. The first degradation is known to be due to an increase in the surface recombination of minority carriers by the accumulation of additional positive charges in the front Si nitride (SiN_x) films. The second and third degradations may be due to significant increases in recombination in the space charge region. The enhancement in recombination in the space charge region may be due to additional defect levels of sodium (Na) introduced into the space charge region in the p–n junction. We also performed recovery tests by applying a positive bias of +1000 V. The module with the first degradation completely recovered its performance losses, and the module with the second degradation was almost completely recovered. On the contrary, the modules with the third degradation could not be recovered. These findings may improve the understanding of the reliability of n-type FE c-Si PV modules in large-scale PV systems.     

0.15 μm passivated InP-based HEMT MMIC technology with highthermal stability in hydrogen ambient

The effect of thermal stress on InP-based HEMT MMIC with Ti-Pt-Au gate metallization in N₂ and H₂ forming gas is reported. The importance of stabilization bake at high temperature under nitrogen to stabilize the threshold voltage and device parameters is demonstrated. In addition, through thermal stress at 270°C with hydrogen ambient, we found, that our InP based HEMT devices and MMICs with Ti-Pt-Au gate metallization are not sensitive to hydrogen. To our knowledge, this is the first demonstration of hydrogen insensitive FET's and MMIC's with Ti-Pt-Au gate metallization     

Annual degradation rates of recent crystalline silicon photovoltaic modules

Long‐term reliability and durability of recently installed photovoltaic (PV) systems are currently unclear because they have so far only been operated for short periods. Here, we investigated the quality of six types of recent crystalline silicon PV modules to study the viability of PV systems as dispersed power generation systems under operating conditions connected to an electric power grid. Three indicators were used to estimate the annual degradation rates of the various crystalline silicon PV modules: energy yield, performance ratio, and indoor power. Module performance was assessed both with indoor and outdoor measurements using electric measurements taken over a 3‐year period. The trends in the results of the three indicators were almost consistent with each other. Although the performance of the newly installed PV modules decreased by over 2% owing to initial light‐induced degradation immediately after installation, little to no degradation was observed in all the PV modules composed of p‐type solar cells over a 3‐year operation period. However, the PV modules composed of n‐type solar cells clearly displayed performance degradation originating from the reduction of open‐circuit voltage or potential‐induced degradation. The results indicate that a more continuous and detailed outdoor actual investigation is important to study the quality of new, high‐efficiency solar cells, such as heterojunction, interdigitated back contact solar cells, and passivated emitter rear cells, which are set to dominate the PV markets in the future. © 2017 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd.     

Single-walled carbon nanotube transistors fabricated by advanced alignment techniques utilizing CVD growth and dielectrophoresis

Single-walled carbon nanotube field effect transistors (SWNT-FETs) are fabricated by two different alignment techniques. The first technique is based on direct synthesis of an aligned SWNTs array on quartz wafer using chemical vapor deposition. The transistor with three SWNTs and atomic layer deposited (ALD) Al₂O₃ gate oxide shows a contact resistance of 280 KΩ, a maximum on-current of ?7 μA, and a high I_on/I_off ratio (>10³). The second technique is based on room temperature self-assembly of SWNT bundles using dielectrophoresis. By applying AC electric fields, we have aligned nanotube bundles between drain and source contact patterns of a transistor at room temperature. Transistors based on twisted bundle of SWNTs show high contact resistance (MΩ range) and low current drive in the order of tens of nA.     

Temperature behavior and modeling of ohmic contacts to Si implanted n-type GaN

The behavior of an ohmic contact to an implanted Si GaN n-well in the temperature range of 25-300 °C has been investigated. This is the sort of contact one would expect in many GaN based devices such as (source/drain) in a metal-oxide-semiconductor transistor. A low resistivity ohmic contact was achieved using the metal combination of Ti (350 Å)/Al (1150 Å) on a protected (SiO₂ cap) and unprotected samples during the post implantation annealing. Sheet resistance of the implanted layer and metal-semiconductor contact resistance to N⁺ GaN have been extracted at different temperatures. Both, the experimental sheet resistance and the contact resistance decrease with the temperature and their characteristics are fitted by means of physical based models.     

Au and non-Au based rare earth metal-silicide ohmic contacts to p-InGaAs

The aim of this study is to improve the electrical properties of ohmic contacts that plays crucial role on the performance of optoelectronic devices such as laser diodes (LDs), light emitting diodes (LEDs) and photodetectors (PDs). The conventional (Pd/Ir/Au, Ti/Pt/Au and Pt/Ti/Pt/Au), Au and non-Au based rare earth metal-silicide ohmic contacts (Gd/Si/Ti/Au, Gd/Si/Pt/Au and Gd/Si/Pt) to p-InGaAs were investigated and compared each other. To calculate the specific contact resistivities the Transmission Line Model (TLM) was used. Minimum specific contact resistivity of the conventional contacts was found as 0.111 × 10⁻⁶ Ω cm² for Pt/Ti/Pt/Au contact at 400 °C annealing temperature. For the rare earth metal-silicide ohmic contacts, the non-Au based Gd/Si/Pt has the minimum value of 4.410 × 10⁻⁶ Ω cm² at 300 °C annealing temperature. As a result, non-Au based Gd/Si/Pt contact shows the best ohmic contact behavior at a relatively low annealing temperature among the rare earth metal-silicide ohmic contacts. Although the Au based conventional ohmic contacts are thermally stable and have lower noise in electronic circuits, by using the non-Au based rare earth metal-silicide ohmic contacts may overcome the problems of Au-based ohmic contacts such as higher cost, poorer reliability, weaker thermal stability, and the device degradation due to relatively higher alloying temperatures. To the best of our knowledge, the Au and non-Au based rare earth metal-silicide (GdSi_x) ohmic contacts to p-InGaAs have been proposed for the first time.     

Effect of Chromium–Gold and Titanium–Titanium Nitride–Platinum–Gold Metallization on Wire/Ribbon Bondability

Gold metallization on wafer substrates for wire/ribbon bond applications requires good bond strength to the substrate without weakening the wire/ribbon. This paper compares the ribbon bondability of Cr-Au and Ti-TiN-Pt-Au metallization systems for an optoelectronic application. Both Chromium and Titanium are used to promote adhesion between semiconductor substrates and sputtered gold films. However, both will be oxidized if they diffuse to the gold surface and result in the degradation of the wire/ribbon bondability. Restoring bondability by ceric ammonium nitrate (CAN) etch was investigated. Experiments were conducted to investigate the effect of Cr-Au and Ti-TiN-Pt-Au, annealing, and CAN etch processes, on 25.4times254 mum (1 times 10 mil) ribbon bonding. All bonds were evaluated by noting pull strengths and examining specific failure modes. The results show that there is no significant difference in bondability between Cr-Au and Ti-TiN-Pt-Au before the annealing process. At this point, excellent bond strength can be achieved. However, wire/ribbon bondability of Cr-Au degraded after the wafers were annealed. The experimental results also show that a CAN etch can remove Cr oxide, and that the improvement in wire/ribbon bondability of Cr-Au depends on the CAN etch time. It is further demonstrated that the same annealing process does not have a significant effect on the bondability of Ti-TiN-Pt-Au metallization on the same type substrate materials. Auger electron spectroscopy was used to investigate the causes of the difference in bondability between these two metallizations     

Multi‐pronged analysis of degradation rates of photovoltaic modules and arrays deployed in Florida

The long‐term performance and reliability of photovoltaic (PV) modules and systems are critical metrics for the economic viability of PV as a power source. In this study, the power degradation rates of two identical PV systems deployed in Florida are quantified using the Performance Ratio analytical technique and the translation of power output to an alternative reporting condition of 1000 W m⁻² irradiance and cell temperature of 50 °C. We introduce a multi‐pronged strategy for quantifying the degradation rates of PV modules and arrays using archived data. This multi‐pronged approach utilizes nearby weather stations to validate and, if needed, correct suspect environmental data that can be a problem when sensor calibrations may have drifted. Recent field measurements, including I‐V curve measurements of the arrays, visual inspection, and infrared imaging, are then used to further investigate the performance of these systems. Finally, the degradation rates and calculated uncertainties are reported for both systems using the methods described previously. Copyright © 2012 John Wiley & Sons, Ltd.     

Improved solar cell performance by adding ultra-thin Alq3 at the cathode interface

We report a new finding that ultra-thin Tris(8-hydroxyquinoline) aluminum (Alq₃) improves an Al cathode interface for photovoltaic (PV) with inorganic amorphous silicon (a-Si) as well as organic bulk heterojunction (BHJ) photoactive layers. Contact resistance characterization is used to investigate the effect of the added Alq₃. The experimental results show that the inserted Alq₃ is observed to reduce the contact resistance at the cathode interface. Supported by our numerical analysis, the enhanced cathode interface by Alq₃ provides better Ohmic contact, thereby increasing V_oc. The overall power efficiency is enhanced accordingly benefited by the Alq₃ added cathode regardless of photoactive layers.     

Detailed investigation of dependencies of photovoltaic performances of P3HT:PC61BM based solar cells on anodic work function modified by surface treatment of indium-tin-oxide electrode with benzenesulfonyl chloride derivatives

The photovoltaic (PV) characteristics of bulk-heterojunction (BHJ) solar cells based on poly(3-hexylthiophene) and [6,6]-phenyl-C₆₁-butyric acid methyl ester (P3HT:PC₆₁BM) were improved using indium-tin-oxide (ITO) anode electrodes modified chemically with CH₃O-, H-, Cl-, CF₃-, and NO₂-terminated benzenesulfonyl chlorides as a self-assembled monolayer (SAM). The ITO electrode surfaces were easily treated through the chemical modification of the reactive –SO₂Cl binding group, and the work function (WF) of the modified ITO was effectively changed depending on the permanent dipole moments introduced in the para-position of benzenesulfonyl chloride. We examined the correlation between the ITO WFs corrected by the change in the contact potential difference and the calculated dipole moments of the SAM models. Moreover, we examined the PV characteristics of the P3HT:PC₆₁BM based BHJ organic PV cells using the SAMs or poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)-treated ITOs with different WFs lying within ±0.2 eV from the highest occupied molecular orbital (HOMO) level of P3HT. We found that the enhancement effect of the SAMs on the power-conversion efficiency (η_P) reached a maximum with Cl (η_P = 3.72%), and became larger than that of PEDOT:PSS (η_P = 3.62%). Two distinct J_sc dependencies, increasing and decreasing with the increasing WF of the anode ITO, were observed at higher and lower WFs than the HOMO level of the donor, respectively. Almost constant V_oc values (around 0.6 V) were observed with different SAM-modified ITOs, which suggested that Fermi level pinning was achieved by aligning the anode Fermi level and positive polaronic level of the donor polymer.     

Artificial neural network‐based photovoltaic module temperature estimation for tropical climate of Malaysia and its impact on photovoltaic system energy yield

This article presents an artificial neural network (ANN)‐based approach for predicting photovoltaic (PV) module temperature using meteorological variables. The proposed approach utilizes actual hourly records of various meteorological parameters, such as ambient temperature T_a, solar irradiation G, relative humidity RH, and wind speed Ws as input variables. The hourly meteorological data were collected over 9 months in the year 2009 from a 92‐kWp installed PV system in Selangor, Malaysia. The data were divided into two sets: training data, which are a set of 1849 (April–October) hourly data, and 578 (November–December) hourly records of working as test data. Four ANN models have been developed by using different combination of meteorological parameters as inputs, and, for each model, the output is the PV module temperature T_m. It was found that the model using all parameters, including RH and Ws as inputs, gave the most accurate results with correlation coefficient (r) 95.9%, and 0.41, 0.1, and 4.5% for MBE, RMSE, and MPE, respectively. To show the superiority and applicability of the developed ANN model, results from the proposed ANN model have been compared with the conventional model adopted by Malaysia Energy Center and another mathematical model based on regression. With the model's simplicity, the proposed approach can be used as an effective tool for predicting the PV module temperature, for any type of PV systems, in remote or rural locations with no direct measurement equipments. The developed model also will be very useful in studying PV system performance and estimating its energy output. Copyright © 2013 John Wiley & Sons, Ltd.     

Accelerated irradiance and temperature cycle test for amorphous silicon photovoltaic devices

An accelerated irradiance and temperature cycle test (AITCT) has been developed as a method to evaluate the long‐term performance stability of amorphous silicon (a‐Si) photovoltaic (PV) devices. The AITCT simulates the daily light–dark cycle in 6 min (0.1 h). It also simulates the annual temperature cycle while controlling the temperature at 45 °C above the average monthly outdoor ambient temperature. This allows the influence of the day–night cycle and seasonal variation to be included in the acceleration factor for single‐junction a‐Si PV devices. The initial degradation and seasonal variation of performance of a‐Si PV devices simulated by the AITCT agreed well with experimental results of 4‐year outdoor exposure. Subsequent tests with the AITCT equivalent of 30‐year outdoor exposure revealed that rapid degradation in the efficiency of a‐Si PV devices would not occur by repeating the cyclic changes corresponding to seasonal variations following the initial degradation. The AITCT is able to accelerate further recovery in addition to light‐induced degradation. Furthermore, the AITCT is applicable to other PV devices with light‐intensity dependencies related to light‐induced degradation as well as thermal recovery dependencies, such as multi‐junction PV devices consisting of a‐Si layers and other materials. This point will be discussed. Copyright © 2012 John Wiley & Sons, Ltd.     

Accurate negative bias temperature instability lifetime prediction based on hole injection

Negative bias temperature instability (NBTI) lifetime prediction of thin gate insulator films based on hole injection without gate voltage acceleration is described and lifetime comparison between SiO₂ film and SiON film is made based on the prediction method. The acceleration parameters are most important for the accurate lifetime prediction. The proposed acceleration parameter is not the applied voltage to the gate insulator film and the temperature but quantity of the hole injection to the gate insulator film that directly relates with the quantity of holes in the inversion layer. The degradation mechanism under the excessive voltage and excessive temperature stresses are different from that in the operation conditions. Using the hole injection method, the NBTI lifetime of SiON is less than that of SiO₂. This result agrees with the reported results measured by conventional high gate fields and temperatures. By the introduction of effective stress time (=Q_hole/J_inj0), accurate lifetime prediction in terms of the V_th shift is realized, and by analyzing of relationship between I_D reduction and V_th shift, accurate lifetime prediction in terms of the I_D reduction and the degradation prediction in the circuit level are realized. These results are essential for the accurate NBTI lifetime prediction for further more integrated LSI such as very thin gate insulator films around 1 nm.     

Nanoscale mapping by electron energy-loss spectroscopy reveals evolution of organic solar cell contact selectivity

Organic photovoltaic (OPV) devices are on the verge of commercialization being long-term stability a key challenge. Morphology evolution during lifetime has been suggested to be one of the main pathways accounting for performance degradation. There is however a lack of certainty on how specifically the morphology evolution relates to individual electrical parameters on operating devices. In this work a case study is created based on a thermodynamically unstable organic active layer which is monitored over a period of one year under non-accelerated degradation conditions. The morphology evolution is revealed by compositional analysis of ultrathin cross-sections using nanoscale imaging in scanning transmission electron microscopy (STEM) coupled with electron energy-loss spectroscopy (EELS). Additionally, devices are electrically monitored in real-time using the non-destructive electrical techniques capacitance–voltage (C–V) and Impedance Spectroscopy (IS). By comparison of imaging and electrical techniques the relationship between nanoscale morphology and individual electrical parameters of device operation can be conclusively discerned. It is ultimately observed how the change in the cathode contact properties occurring after the migration of fullerene molecules explains the improvement in the overall device performance.     

Impacts of NBTI/PBTI on performance of domino logic circuits with high-k metal-gate devices in nanoscale CMOS

Negative-bias temperature instability (NBTI) and positive-bias temperature instability (PBTI) weaken PFETs and high-k metal-gate NFETs, respectively. This paper provides comprehensive analyses on the impacts of NBTI and PBTI on wide fan-in domino gates with high-k metal-gate devices. The delay degradation and power dissipation of domino logic, as well as the Unity Noise Gain (UNG) are analyzed in the presence of NBTI/PBTI degradation. It has been shown that the main concern is the degradation impact on delay which can increase up to 16.2% in a lifetime of 3 years. We have also proposed a degradation tolerant technique to compensate for the NBTI/PBTI-induced delay degradation in domino gates with a negligible impact on UNG and power.     

Photovoltaic module reliability model based on field degradation studies

Crystalline silicon photovoltaic (PV) modules are often stated as being the most reliable element in PV systems. This presumable high reliability is reflected by their long power warranty periods. In agreement with these long warranty times, PV modules have a very low total number of returns, the exceptions usually being the result of catastrophic failures. Up to now, failures resulting from degradation are not typically taken into consideration because of the difficulties in measuring the power of an individual module in a system. However, lasting recent years PV systems are changing from small isolated systems to large grid‐connected power stations. In this new scenario, customers will become more sensitive to power losses and the need for a reliability model based on degradation may become of utmost importance. In this paper, a PV module reliability model based on degradation studies is presented. The main analytical functions of reliability engineering are evaluated using this model and applied to a practical case, based on state‐of‐the‐art parameters of crystalline silicon PV technology. Relevant and defensible power warranties and other reliability data are obtained with this model based on measured degradation rates and time‐dependent power variability. In the derivation of the model some assumptions are made about the future behaviour of the products—i.e. linear degradation rates—although the approach can be used for other assumed functional profiles as well. The method documented in this paper explicitly shows manufacturers how to make reasonable and sensible warranty projections. Copyright © 2008 John Wiley & Sons, Ltd.