A low-power 128-tap digital adaptive equalizer for broadband modems

This paper describes a modem receiver chip containing two 64-tap adaptive finite impulse response (FIR) filters configured in parallel as in-phase and quadrature-phase filters. Each filter has a span of 16 symbols and can be configured for T/2, T/3, or T/4 fractional spacing. A zero-latency pipeline technique is used that allows adaptive filters of arbitrary length without degrading the speed. Power is saved at the algorithmic, architectural, and circuit levels. The chip has support for dynamically tuning coefficient precision, updating rates and filter lengths to reduce power consumption. The chip was fabricated in 0.5-μm CMOS technology and consumes 535 mW of power when operating at 50 MHz with 128 taps, T/4 spacing, and symbol-rate power-of-two LMS updating. This can be further reduced to 280 mW using dynamic power reduction techniques. The power in the FIR filter is 162 mW with maximum precision converged coefficients which corresponds to 5.1 mW per multiply-accumulate operation     

采用电流复用拓扑的宽带收发一体多功能电路

基于标准的GaAs赝配高电子迁移率晶体管(PHEMT)单片微波集成电路(MMIC)工艺设计并制备了一款宽带收发一体多功能电路芯片.该多功能芯片包含了功率放大器、低噪声放大器和收发开关.放大器采用电流复用拓扑结构实现了低功耗的目标.收发开关采用浮地结构避免了使用负电源.芯片在14～ 24 GHz工作频率的实测结果显示:接收支路噪声系数小于3.0dB,增益大于18 dB,输入及输出电压驻波比(VSWR)均小于2.0,1 dB压缩点输出功率大于0 dBm,直流功耗为60 mW;发射支路增益大于21 dB,输入输出VSWR均小于1.8,1dB压缩点输出功率大于10 dBm,直流功耗为180 mW.芯片尺寸为2 600 μm×1 800 μm.该多功能收发电路的在片测试结果和仿真结果一致,性能达到了设计要求.     

A 123-mW W-CDMA uplink baseband receiver IC with beamforming capability

In this paper, architecture and circuit design of a beamforming baseband receiver IC for uplink W-CDMA communication systems is presented. In the proposed receiver, a four-antenna-element beamformer and a four-finger RAKE combiner are adopted to exploit both spatial diversity and path diversity receiving. To minimize the size and power consumption of the receiver, a latch-based 1024-tap complex delay line is custom designed for the matched filter in the channel estimation circuit. The receiver chip was fabricated in a 0.35-/spl mu/m n-well CMOS single-poly quadruple-metal technology. The minimum supply voltage with the chip running at the nominal 15.36-MHz clock rate is measured at 2.15 V. The chip has an area of 6 mm by 6.3 mm and a power consumption of about 123 mW.     

应用于10Gb/s光接收机的全差分CMOS跨阻前置电路设计

设计了一种的低成本、低功耗的10 Gb/s光接收机全差跨阻前置放大电路。该电路由跨阻放大器、限幅放大器和输出缓冲电路组成,其可将微弱的光电流信号转换为摆幅为400 mVpp的差分电压信号。该全差分前置放大电路采用0.18 m CMOS工艺进行设计,当光电二极管电容为250 fF时,该光接收机前置放大电路的跨阻增益为92 dB,-3 dB带宽为7.9 GHz,平均等效输入噪声电流谱密度约为23 pA/(0~8 GHz)。该电路采用电源电压为1.8 V时,跨阻放大器功耗为28 mW,限幅放大器功耗为80 mW,输出缓冲器功耗为40 mW,其芯片面积为800 m1 700 m。     

具有负反馈的分段曲率校正CMOS带隙基准源

提出了一种新型带有负反馈的分段曲率校正带隙电压基准源,该基准源的主要特色是利用温度相关的电阻比技术获得一个分段曲率校正电流,校正了一阶带隙基准源的非线性温度特性.该分段线性电流产生电路还形成了一个负反馈,以改善带隙基准源的电源抑制和线性调整率.测试结果表明:在2.6V电源电压下,该基准源在没有采用校正的条件下,在-50～125℃温度范围内实现了最大21.2ppm/℃温度系数,电源抑制比为-60dB.在2.6～5.6V电源电压下的线性调整率为0.8mV/V.采用中芯国际(SMIC)0.35μm5Vn阱数字CMOS工艺成功实现,有效芯片面积0.04mm2,其总功耗为0.18mW.该基准源应用于3,5V兼容的光纤接收跨阻放大器.     

Analysis and design of inductive coupling and transceiver circuit for inductive inter-chip wireless superconnect

A wireless bus for stacked chips was developed by utilizing inductive coupling among them. This paper discusses inductor layout optimization and transceiver circuit design. The inductive coupling is analyzed by a simple equivalent circuit model, parameters of which are extracted by a magnetic field model based on the Biot-Savart law. Given communication distance, transmit power, data rate, and SNR budget, inductor layout size is minimized. Two receiver circuits, signal sensitive and yet noise immune, are designed for inductive nonreturn-to-zero (NRZ) signaling where no signal is transmitted when data remains the same. A test chip was fabricated in 0.35-/spl mu/m CMOS technology. Accuracy of the models is verified. Bit-error rate is investigated for various inductor layouts and communication distance. The maximum data rate is 1.25 Gb/s/channel. Power dissipation is 43 mW in the transmitter and 2.6 mW in the receiver at 3.3 V. If chip thickness is reduced to 30 /spl mu/m in 90-nm device generation, power dissipation will be 1 mW/channel or bandwidth will be 1 Tb/s/mm/sup 2/.     

Differential bidirectional transceiver for on-chip long wires

This work presents a differential bidirectional transceiver (DBT) for on-chip long wires. To enhance operating speed and reduce power consumption, the voltage swing on the wire is reduced using current-mode scheme. Consequently, our design performs higher data rate when wire length is extended. Moreover, adoption of differential scheme with a moderate tradeoff of area effectively lowers power supply noise and common mode noise. The receiver adopts four input differential pairs along with current summation circuit to evaluate small signal differences of every that state resulted from transmitting different data. Simulations using 0.18-μm device model indicates that the total input to output delay over a 5 mm long wire is 0.96 ns, with a power consumption of 8.724 mW at a speed of 1.2 Gbps and a maximum achievable data rate of 1.5 Gbps. A test chip is realized and successfully verifies the performance of the transceiver.     

一种低功耗的高速光接收器跨阻前置电路设计

为了降低芯片面积和功耗,提出了一种10 Gb/s光接收器跨阻前置放大电路。该电路采用了两个带有可调共源共栅（RGC）输入的交叉有源反馈结构,其中的跨阻放大器未使用电感,从而减少了芯片的总体尺寸。该跨阻前置电路采用0.13μm CMOS工艺设计而成,数据速率高达10 Gb/s。测试结果表明,相比其他类似电路,提出的电路芯片面积和功耗更小,芯片面积仅为0.072mm2,当电源电压为1.3 V时,功率损耗为9.1 mW,实测平均等效输入噪声电流谱密度为20pA/（0.1-10）Hz,且-3dB带宽为6.9 GHz。     

A 20-Gb/s CMOS multichannel transmitter and receiver chip set forultra-high-resolution digital displays

A multichannel transmitter (TX) and receiver (RX) chip set operating at 20 Gb/s (5 Gb/s×4 ch) has been developed by using 0.25-μm CMOS technology. To achieve multichannel data transmission and high-speed operation, the chip set features: (1) circuits for compensating the phase difference between multiple RX chips, which is due to data skew resulting from different lengths of transmission cables, and for compensating the frequency difference between the system clocks of the TX and RX chips; (2) a self-alignment phase detector with parallel output for a high-speed data-recovery circuit; and (3) a fully pipelined 8B10B encoder. At a 2.5-V power supply, the power consumption of the TX chip during 5-Gb/s operation is 500 mW and that of the RX chip is 750 mW. Four of these TX/RX chip sets can provide an aggregate bandwidth of 20 Gb/s     

A Low-Power Multicarrier-CDMA Downlink Baseband Receiver for Future Cellular Communication Systems

In this paper, design and implementation of a baseband receiver integrated circuit (IC) for a downlink multi-carrier code-division multiple access (MC-CDMA) system are presented. This MC-CDMA system aims to provide higher data transmission capacity than the current wide-band CDMA systems in mobile cellular communication environments. The proposed chip provides a robust tracking mechanism for synchronization errors and an accurate channel estimation strategy to overcome the challenge of outdoor fast-fading channels. Besides, low-power and low-complexity architecture design techniques are adopted to satisfy mobile receiver needs. Experimental results of the designed baseband receiver integrated circuit demonstrate its superior system performance and great reduction in power consumption. The chip was fabricated in a 0.18-mum CMOS technology with a core area of 2.6 mm times 2.6 mm. It can support up to 21.7-Mbps uncoded data rate in a 5-MHz bandwidth. When running at 5.76 MHz, its power consumption is as low as 9.9 mW from a supply voltage of 1.1 V.     

A Low Power Fully CMOS Integrated RF Transceiver IC for Wireless Sensor Networks

A fully CMOS integrated RF transceiver for ubiquitous sensor networks in sub-gigahertz industrial, scientific, and medical (ISM)-band applications is implemented and measured. The integrated circuit is fabricated in 0.18-mum CMOS technology and packaged in leadless plastic chip carrier (LPCC) package. The fully monolithic transceiver consists of a receiver, a transmitter, and an RF synthesizer with on-chip voltage-controlled oscillator. The chip fully complies with the IEEE 802.15.4 wireless personal area network in sub-gigahertz mode. The cascaded noise figure of the overall receiver is 9.5 dB and the overall transmitter achieves less than 6.3% error vector magnitude for 40 kb/s mode. The chip uses 1.8-V power supply and the power consumption is 25 mW for reception mode and 29 mW for transmission mode     

An all-digital low-power IF GPS synchronizer

An all-digital intermediate frequency (IF) Global Positioning System (GPS) synchronizer for employment in portable electronic applications is presented. The chip performs code and carrier synchronization, decodes received data, and provides pseudorange estimates. To reduce the average power dissipation, the whole receiver is powered down and reactivated only when it needs to update its position estimate. With a lower duty cycle, the receiver spends more time in the power-down mode and the power consumption of the whole receiver is proportionately reduced. The synchronizer is therefore designed to minimize re-acquisition time between position readings. When powered up, the synchronizer searches in parallel over a window of timing uncertainty, then employs near-optimal tracking with a variable loop gain filter. With SNR=-20 dB, phase shift rate of 1 chip/s, and user velocity of 30 m/s, the synchronizer chip dissipates under 4 mW for pseudorange estimate rms error of under 7 m     

Chip for wideband digital predistortion RF power amplifierlinearisation

The authors present a custom chip for use in digital predistortion linearisation of RF power amplifiers. The chip is mainly implemented with systolic arrays. At maximum clock-rate, 130 MHz, the throughput is 16 Msamples/s with a 5 V supply voltage and power consumption of 1 W. A throughput of 2 Msamples/s is achieved at a 1.2 V supply voltage with 6 mW power consumption     

A Single-Chip CMOS-Based Parallel Optical Transceiver Capable of 240-Gb/s Bidirectional Data Rates

We report here on the design, fabrication, and high-speed performance of a parallel optical transceiver based on a single CMOS amplifier chip incorporating 16 transmitter and 16 receiver channels. The optical interfaces to the chip are provided by 16-channel photodiode (PD) and VCSEL arrays that are directly flip-chip soldered to the CMOS IC. The substrate emitting/illuminated VCSEL/PD arrays operate at 985 nm and include integrated lenses. The complete transceivers are low-cost, low-profile, highly integrated assemblies that are compatible with conventional chip packaging technology such as direct flip-chip soldering to organic circuit boards. In addition, the packaging approach, dense hybrid integration, readily scales to higher channel counts, supporting future massively parallel optical data buses. All transmitter and receiver channels operate at speeds up to 15 Gb/s for an aggregate bidirectional data rate of 240 Gb/s. Interchannel crosstalk was extensively characterized and the dominant source was found to be between receiver channels, with a maximum sensitivity penalty of 1 dB measured at 10 Gb/s for a victim channel completely surrounded by active aggressor channels. The transceiver measures 3.25times5.25 mm and consumes 2.15 W of power with all channels fully operational. The per-bit power consumption is as low as 9 mW/Gb/s, and this is the first single-chip optical transceiver capable of channel rates in excess of 10 Gb/s. The area efficiency of 14 Gb/s/mm² per link is the highest ever reported for any parallel optical transmitter, receiver, or transceiver reported to-date.     

A CMOS ultra-wideband impulse radio transceiver for 1-mb/s data communications and /spl plusmn/2.5-cm range finding

A CMOS ultra-wideband impulse radio (UWB-IR) transceiver was developed in 0.18-/spl mu/m CMOS technology. It can be used for 1-Mb/s data communications as well as for precise range finding within an error of /spl plusmn/2.5 cm. The power consumptions of the transmitter and receiver for data communication are 0.7 and 4.0 mW, respectively. When an LNA operates intermittently through bias switching, the power consumption of the transceiver is only 1 mW. The range for data communication is 1 m with BER of 10/sup -3/. For ranging applications, the transmitter can reduce the power to 0.7 /spl mu/W for 1k pulses per second, and the receiver consumes little power. The transceiver design, all-digital transmitter, and intermittent circuit operation at the receiver reduce the power consumption dramatically, which makes the transceiver well suited for applications like sensor networks. The electronic field intensity is lower than 35 /spl mu/V/m, and thus the UWB system can be operated even under the current Japan radio regulations.     

Integrated circuits for a 200 Mbit/s fiber-optic link

A set of three bipolar integrated circuits for a new fiber-optic link is described. The link operates at data rates of 5-200 Mb/s NRZ. The optical transmitter and receiver modules are compact and fit into standard 16-pin dual-in-line sockets. The power consumption of the transmitter module is 530 mW and the receiver module dissipates 310 mW. The optical loss budget is 20 dB, which is sufficient for link lengths of up to 5 or 6 km. The circuits have been designed in a 3-/spl mu/m bipolar process. The chip sizes are 2 mm/spl times/1.75 mm each.     

A high speed sampler for sub-sampling IR-UWB receiver

A high speed sampler for a sub-sampling impulse radio UWB receiver is presented. In this design, the sampler uses a time-interleaved topology with a single track and hold circuit, full custom clock generator, and offset cancelled comparator. These three main blocks are also discussed and analyzed. The circuit was fabricated in 0.13 μm CMOS technology. Measurement results indicate that the sampler achieves a maximum 3 GS/s sampling rate. The power consumption of the sampler is 27 mW under a supply voltage of 1.2 V. The total chip area including pads is 1.4 × 0.97 mm2.     

用于SDH STM-4光发射机的4:1复接器和激光驱动器

采用CSMC0.6μm CMOS工艺设计实现了速率为622Mbps的4∶1复接器和激光二极管驱动器电路。4∶1复接器采用树型结构,由3个2∶1复接器组成。激光二极管驱动器电路由两级差分放大器和一级电流开关构成,级间采用源级跟随器隔离。电路芯片尺寸为1.5mm×0.7mm。电路采用单一正5V电压供电,功耗约为900mW。测试结果表明,电路的最高工作速率超过1.25Gbps速率,输出最大电流超过85mA。     

用于IEEE802．11b／g WLAN直接下变频接收机的射频前端设计

介绍了一种应用于IEEE802．11b／g无线局域网接收机射频前端的设计。基于直接下变频的系统架构。接收机集成了低噪声放大器、I／Q下变频器、去直流偏移滤波器、基带放大器和信道选择滤波器。电路采用TSMC0．18μm CMOS工艺设计,工作在2．4GHz ISM（工业、科学和医疗）频段,实现的低噪声放大器噪声系数为0．84dB,增益为16dB,S11低于-15dB,功耗为13mW;I／Q下变频器电压增益为2dB,输入1dB压缩点为-1 dBm,噪声系数为13dB,功耗低于10mw。整个接收机射频前端仿真得到的噪声系数为3．5dB,IIP3为-8dBm,IP2大于30dBm,电压增益为31dB,功耗为32mW。     

Design and analysis of an energy-efficient O-QPSK coherent IR-UWB transceiver with a 0.52° RMS phase-noise fractional synthesizer

This paper explores an energy-efficient pulsed ultra-wideband (UWB) radio-frequency (RF) front-end chip fabricated in 0.18-μm CMOS technology,including a transmitter,receiver,and fractional synthesizer.The transmitter adopts a digital offset quadrature phase-shift keying (O-QPSK) modulator and passive direct-phase multiplexing technology,which are energy-and hardware-efficient,to enhance the data rate for a given spectrum.A passive mixer and a capacitor cross-coupled (CCC) source-follower driving amplifier (DA) are also designed for the transmitter to further reduce the low power consumption.For the receiver,a power-aware low-noise amplifier (LNA) and a quadrature mixer are applied.The LNA adopts a CCC boost common-gate amplifier as the input stage,and its current is reused for the second stage to save power.The mixer uses a shared amplification stage for the following passive IQ mixer.Phase noise suppression of the phase-locked loop (PLL) is achieved by utilizing an even-harmonics-nulled series-coupled quadrature oscillator (QVCO) and an in-band noise-aware charge pump (CP) design.The transceiver achieves a measured data rate of 0.8 Gbps with power consumption of 16 mW and 31.5 mW for the transmitter and the receiver,respectively.The optimized integrated phase noise of the PLL is 0.52° at 4.025 GHz.