Quadrature bandpass ΔΣ modulation for digital radio

A quadrature bandpass ΔΣ modulator IC facilitates monolithic digital-radio-receiver design by allowing straightforward “complex A/D conversion” of an image reject mixer's I and Q, outputs. Quadrature bandpass ΔΣ modulators provide superior performance over pairs of real bandpass ΔΣ modulators in the conversion of complex input signals, using complex filtering embedded in ΔΣ loops to efficiently realize asymmetric noise-shaped spectra. The fourth-order prototype IC, clocked at 10 MHz, converts narrowband 3.75-MHz I and Q inputs and attains a dynamic range of 67 dB in 200-kHz (GSM) bandwidth, increasing to 71 and 77 dB in 100- and 30-kHz bandwidths, respectively. Maximum signal-to-noise plus distortion ratio (SNDR) in 200-kHz bandwidth is 62 dB. Power consumption is 130 mW at 5 V. Die size in a 0.8-μm CMOS process is 2.4×1.8 mm²      

Signal adaptive control architecture for ΔΣ modulatordesign

A signal adaptive control architecture for a second-order ΔΣ modulator design is presented. This architecture effectively reduces the power dissipation and the distortion of the first stage in the modulator. The function of this architecture is to switch off the DAC feedback signal to the first stage during some iterations, and to compensate the signal at the second stage, in an adaptive manner     

An eighth-order bandpass ΔΣ modulator for A/Dconversion in digital radio

This paper examines the design and implementation of an eighth-order bandpass delta-sigma modulator. The design process is investigated from the signal flow graph level, through to the details of the switched capacitor implementation and layout considerations. Simulation results, highlighting the effects of process variation, are provided and the experimental performance of the modulator described. The modulator is implemented in a 0.8-μm BiCMOS process and occupies an active area of 1.7 mm². Operating from ±2.5-V supplies, the fabricated prototype exhibits stable behaviour and achieves a dynamic range of 67 dB over a 200-kHz bandwidth centered at the commonly used intermediate frequency of 10.7 MHz. This paper, therefore, demonstrates the viability of high-order single-bit bandpass delta-sigma modulation     

A two-path bandpass ΣΔ modulator for digital IFextraction at 20 MHz

Oversampled bandpass A/D converters based on sigma-delta (ΣΔ) modulation can be used to robustly digitize the types of narrowband intermediate frequency (IF) signals that arise in radios and cellular systems. This paper proposes a two-path architecture for a fourth-order, bandpass modulator that is more tolerant of analog circuit limitations at high sampling speeds than conventional implementations based on the use of switched-capacitor biquadratic filters. An experimental prototype employing the two-path topology has been integrated in a 0.6-μm, single-poly, triple-metal CMOS technology with capacitors synthesized from a stacked metal structure. Two interleaved paths clocked at 40 MHz digitize a 200-kHz bandwidth signal centered at 20 MHz with 75 dB of dynamic range while suppressing the undesired mirror image signal by 42 dB. At low input signal levels, the mixing of spurious tones at DC and f_s/2 with the input appears to degrade the performance of the modulator; out-of-band sinusoidal dither is shown to be an effective means of avoiding this degradation. The experimental modulator dissipates 72 mW from a 3.3 V supply     

A 0.2-mW CMOS ΣΔ modulator for speech coding with 80 dBdynamic range

A CMOS ΣΔ modulator for speech coding with continuous-time loopfilter is presented. Compared to switched-capacitor implementations, the relaxed bandwidth requirements of the active elements of the loopfilter reduce the power consumption. Furthermore, the need for an antialiasing filter at the modulator input is eliminated. A fourth-order, 64× oversampling ΣΔ modulator for application in portable telephones was designed and shows 80 dB dynamic range over the 300-3400 Hz voice bandwidth. Its input is directly connected to the microphone (maximum 40 mV_RMS). Total harmonic distortion (THD) is below -70 dB at 95 μA current consumption from a 2.2 V supply voltage. The active die area of the modulator is 0.5 mm² in a standard 0.5-μm CMOS process     

Design and realization of a digital ΔΣ modulator forfractional-n frequency synthesis

The basic operation of a fractional-n frequency synthesizer has been published, but to date little has been presented on the digital ΔΣ modulators which are required to drive such synthesizers. This paper provides a tutorial overview, which relates digital ΔΣ modulation to other applications of ΔΣ modulation where the literature is more complete. The paper then presents a digital ΔΣ modulator architecture which is economical and efficient and which is practical to realize with commercially available components in comparison with other possible implementations which require extensive custom very large-scale integration (VLSI). A demonstration is made of a 28-b modulator using the architecture presented, which provides a 25-MHz tuning bandwidth and <1-Hz frequency resolution. The modulator is demonstrated in an 800-MHz frequency synthesizer having phase noise of -90 dBC/Hz at a 30-kHz offset     

Very low-voltage digital-audio ΔΣ modulator with 88-dBdynamic range using local switch bootstrapping

A 1-V 1-mW 14-bit ΔΣ modulator in a standard CMOS 0.35-μm technology is presented. Special attention has been given to device reliability and power consumption in a switched-capacitor implementation. A locally bootstrapped symmetrical switch that avoids gate dielectric overstress is used in order to allow rail-to-rail signal switching. The switch constant overdrive also enhances considerably circuit linearity. Modulator coefficients of a single-loop third-order topology have been optimized for low power. Further reduction in the power consumption is obtained through a modified two-stage opamp. Measurement results show that for an oversampling ratio of 100, the modulator achieves a dynamic range of 88 dB, a peak signal-to-noise ratio of 87 dB and a peak signal-to-noise-plus-distortion ratio of 85 dB in a signal bandwidth of 25 kHz     

A 3.3-V CMOS 10.7-MHz sixth-order bandpass ΣΔ modulatorwith 74-dB dynamic range

A 3.3-V bandpass ΣΔ modulator for IF sampling at 10.7 MHz in digital radio applications has been developed. The modulator presents a sixth-order single-loop architecture and features a 74-dB dynamic range in a 2OO-kHz signal bandwidth (FM signal), while for a 9-kHz signal bandwidth (AM signal) the dynamic range is 88 dB. The modulator has been integrated in a standard 0.35-μm CMOS technology using switched-capacitor technique and consumes 76 mW from a single 3.3V supply     

A 3-V, 2%-mW multibit current-mode ΣΔ DAC with 100 dBdynamic range

The area ratio of analog to digital for mixed-mode chip has been inversely proportional to the process design rule for a given dynamic range objective, in contradiction to the LSI trend. This paper presents a design approach to realize a high degree of size reduction with process design rules for analog circuitry and a signal processing architecture for digital circuitry. A five-level current-mode ΣΔ digital-to-analog converter (DAC) system reveals full scale total harmonic: distortion plus noise (THD+N) of -90 dB and dynamic-range of 100 dB at 3 V (low power of 22 mW). Analog-area down-scaling can be accomplished by this architecture to be 1.09 mm², using 0.6-μm double-poly double-metal (DPDM) CMOS. For the digital filter, a pipeline instruction sequence with multiplierless architecture also gives small area of 1.98 mm²     

A Power-Efficient Two-Channel Time-Interleaved ΣΔ Modulator for Broadband Applications

A two-channel time-interleaved second-order sigma-delta modulator for broadband applications including asymmetrical digital subscriber line (ADSL) is presented. The proposed two-channel SigmaDelta modulator uses a single integrator channel which does not require additional active elements for the quantizer input generation, since the integrator outputs are directly used as the input of the quantizers. As a result, the entire modulator can be implemented using only two op-amps, which is beneficial for both power consumption and area. Furthermore, this architecture is robust to channel mismatch effects and can operate with a simple clocking scheme. The SigmaDelta modulator achieves a dynamic range of 85 dB over a 1.1-MHz signal bandwidth with an effective clock frequency of 132 MHz. The circuit is implemented in 0.18-mum CMOS technology using metal-insulator-metal capacitors. The total power consumption of the SigmaDelta modulator is 5.4mW from a 1.8-V supply and occupies an active area of 1.1 mm²     

A 80-MHz bandpass ΔΣ modulator for a 100-MHz IFreceiver

A fully differential fourth-order bandpass ΔΣ modulator is presented. The circuit is targeted for a 100-MHz GSM/WCDMA-multimode IF-receiver and operates at a sampling frequency of 80 MHz. It combines frequency downconversion with analog-to-digital conversion by directly sampling an input signal from an intermediate frequency of 100 MHz to a digital intermediate frequency of 20 MHz. The modulator is based on a double-delay single-op amp switched-capacitor (SC) resonator structure which is well suited for low supply voltages. Furthermore, the center frequency of the topology is insensitive to different component nonidealities. The measured peak signal-to-noise ratio is 80 and 42 dB for 270 kHz (GSM) and 3.84-MHz (WCDMA) bandwidths, respectively. The circuit is implemented with a 0.35-μm CMOS technology and consumes 56 mW from a 3.0-V supply     

A CMOS monolithic ΔΣ-controlled fractional-N frequencysynthesizer for DCS-1800

A monolithic 1.8-GHz ΔΣ-controlled fractional-N phase-locked loop (PLL) frequency synthesizer is implemented in a standard 0.25-μm CMOS technology. The monolithic fourth-order type-II PLL integrates the digital synthesizer part together with a fully integrated LC VCO, a high-speed prescaler, and a 35-kHz dual-path loop filter on a die of only 2×2 mm². To investigate the influence of the ΔΣ modulator on the synthesizer's spectral purity, a fast nonlinear analysis method is developed and experimentally verified. Nonlinear mixing in the phase-frequency detector (PFD) is identified as the main source of spectral pollution in ΔΣ fractional-N synthesizers. The design of the zero-dead zone PFD and the dual charge pump is optimized toward linearity and spurious suppression. The frequency synthesizer consumes 35 mA from a single 2-V power supply. The measured phase noise is as low as -120 dBc/Hz at 600 kHz and -139 dBc/Hz at 3 MHz. The measured fractional spur level is less than -100 dBc, even for fractional frequencies close to integer multiples of the reference frequency, thereby satisfying the DCS-1800 spectral purity constraints     

A statistics-based digital background calibration technique for pipelined ADCs

This paper introduces a digital background calibration technique for pipelined analog-to-digital converters (ADCs). The proposed method continuously measures and digitally corrects conversion errors resulting from residue amplifier gain error and nonlinearity. It is based on modulation of the residue voltage using a pseudorandom-noise sequence (PN). A least-mean-squares (LMS) algorithm is utilized to correct conversion errors arising from the residue amplifier non-idealities. Besides, a new statistics-based digitized residue distance estimation (DRDE) algorithm is proposed that allows the LMS algorithm to operate in the background without interrupting the normal operation of the ADC. The DRDE method extracts the residue amplifier non-idealities by evaluating the digitized residue voltage probability density function (PDF). Behavioral simulation results verify the usefulness of the proposed calibration technique and show that the signal-to-noise-and-distortion-ratio (SNDR) is improved from 43 to 71.9 dB, in a 12-bit pipelined ADC.     

A code-pattern-driven digital background calibration technique for SAR ADCs

The article presents the buck converter for the application on headlights of vehicle with chip-level design. The LED components are used as for lighting source, which near/far lights are controlled with high-current switching circuit in the chip. The level-shift circuit and its current driver is proposed to control the input of high-voltage power MOS. The bypass method is presented to reduce the transient time as load current changes suddenly. The input voltage widely ranges from 8 to 21 V while keeping a stable output voltage with 6 V. The chip current can output from 20 to 1500 mA with excellent regulation. This chip had been implemented with TSMC0.25 µm HV- process, and the size of the circuit layout is about 8.6 mm², where includes power switch and far/near lighting switches. Measurements show that peak efficiency can achieve 86.3%. The power regulation is excellent, where the load regulation is only 0.3%, and the line regulation is only 0.5%.

     

A 1.8-V ΔΣ modulator interface for an electretmicrophone with on-chip reference

The design of a delta-sigma (ΔΣ) analog-to-digital converter (ADC) for direct voltage readout of an electret microphone is presented. The ADC is integrated on the same chip with a bandgap voltage reference and is designed to be packaged together with an electret microphone. Having a power consumption of 1.7 mW from a supply voltage of 1.8 V, the circuit is well suited for use in mobile applications. The single-loop, single-bit, fourth-order ΔΣ ADC operates at 64 times oversampling for a signal bandwidth of 11 kHz. The measured dynamic range is 80 dB and the peak signal-to-(noise+distortion) ratio is 62 dB. The harmonic distortion is minimized by using an integrator with an instrumentation amplifier-like input which directly integrates the 125-mV peak single-ended voltage generated by the microphone. A combined continuous-time/switched-capacitor design is used to minimize power consumption     

A 1.5-V-100-μW ΔΣ modulator with 12-b dynamic rangeusing the switched-opamp technique

The design and implementation of a very low supply voltage/low power ΔΣ modulator is presented. It is based on the switched-opamp technique, which allows low voltage operation with a standard process and without voltage multiplication. The design methodology is illustrated with a second-order single-loop ΔΣ modulator. The chip is implemented in a 0.7-μm CMOS process with standard threshold voltages. The power supply is 1.5 V and the power dissipation is only 100 μW. The measured dynamic range in the speech bandwidth of 300-3400 Hz is 12 b. The total harmonic distortion (THD) is lower than -72 dB     

A 13.5-mW 185-Msample/s ΔΣ modulator for UMTS/GSMdual-standard IF reception

A system-oriented approach for the design of a UMTS/GSM dual-standard ΔΣ modulator is presented to demonstrate the feasibility of achieving intermediate frequency (IF) around 100 MHz, high dynamic range, and low power consumption at the same time. The circuit prototype implements 78 MHz IF for GSM and 138.24 MHz for wideband code division multiple access (WCDMA), which are set to be 3/4 of the analog-to-digital converter sampling rate. A two-path IF sampling and mixing topology with a low-pass ΔΣ modulator, run at half the sampling rate, is used. Implemented in 0.25-μm CMOS, the circuit achieves dynamic range and peak signal-to-noise and distortion ratio for GSM of 86 and 72 dB, respectively. The corresponding values for WCDMA are 54 and 52 dB, respectively. Optimization is performed at all stages of design to minimize power consumption. The complete circuit consumes less than 11.5 mW for GSM and 13.5 mW for WCDMA at 2.5-V supply, of which 8 mW is due to the analog part     

Error-driven edge selection for ΣΔ modulated signals tosuppress in-band noise due to non-uniform sampling

A method for suppressing the in-band noise of ΣΔ-modulated signals due to non-uniform sampling is proposed. This method enables the use of the over-sampling clock generated from a fractional programmable generator without significant degradation in the signal-to-(noise+distortion) ratio (SNDR). The sampling frequency is controlled with a frequency resolution of 5.4 Hz without an analogue PLL. Experimental results for the voice band application of the ΣΔ-modulated 1 bit DAC show that the SNDR can be maintained at >70 dB, for sampling rates in the range 7.1-7.8 kHz     

Variable-amplitude dither-based digital background calibration algorithm for linear and high-order nonlinear error in pipelined ADCs

Dither-based digital background calibration algorithm has been used to eliminate the influence of linear and nonlinear errors in pipelined ADC. However, this algorithm suffers from two disadvantages: too slow convergent speed and deduction of transmitting signal’s amplitude in analog circuits due to dither injection. Input-dependent variable-amplitude dither-based algorithm is used in this paper to conquer both disadvantages. This proposed algorithm is implemented in a 14-bit, 100 MHz sample-rate pipelined ADC. The simulation results illustrate signal-to-noise and distortion (SINAD) of 76.56 dB after calibration of linear and nonlinear errors. Furthermore, the convergent speed is improved much more.     

Multi-bit cascade ΣΔ modulator for high-speed A/Dconversion with reduced sensitivity to DAC errors

The authors present a ΣΔ modulator (ΣΔM) which combines single-bit and multi-bit quantisation in a cascade architecture to obtain high resolution with a low oversampling ratio. It is less sensitive to the nonlinearity of the digital-to-analogue (DAC) than those previously reported, thus enabling the use of very simple analogue circuitry with neither calibration nor trimming required