磁控溅射沉积透明导电薄膜的结构及光电特性研究

采用射频磁控溅射工艺、以氧化锌铝陶瓷靶为靶材制备透明导电ZAO薄膜 ,系统研究了各工艺参数 ,如工作气压、温度、射频功率和退火条件对其结构和光电特性的影响。在纯氩气中且补底温度为 30 0℃时制备的ZAO薄膜经热处理后电阻率降至 8 7× 1 0 -4Ωcm ,可见光透过率在 85 %以上。X射线衍射谱扫描电镜照片表明ZAO晶粒具有六角纤锌矿结构且呈c轴择优取向 ,晶粒垂直于衬底方向柱状生长。     

ZnO:Al(ZAO)薄膜的制备与特性研究

采用磁控溅射技术制备了ZnO:Al(ZAO)薄膜.研究了不同的工艺参数对薄膜的组织结构和光电特性的影响.实验结果表明,多晶ZAO薄膜具有(001)择优取向且呈柱状生长,能量机制决定其微观生长状态.讨论了薄膜的内应力,高的沉积温度和低的溅射功率可有效减小薄膜的内应力.优化的ZAO薄膜电阻率和在可见光区的平均透射率可分别达到3×10-4-4×10-4Ω·cm和80％以上.     

含氢掺硅类金刚石薄膜的制备及性能表征

采用磁控溅射和离子源复合沉积技术,在Si片、模具钢和硬质合金上制备了均匀致密的含氢掺硅类金刚石薄膜.先用正交法优化含氢类金刚石薄膜的制备工艺,然后通过控制中频碳化硅靶的功率密度向含氢类金刚石膜层中成功掺人Si元素.采用扫描电子显微镜(SEM)、X射线光电子能谱仪(XPS)、X射线衍射仪(XRD)、硬度计、划痕仪和摩擦磨损试验机等手段测试和研究了膜层的形貌、成分、sp3和sp2含量及其性能.结果表明:优化后含氢类金刚石薄膜的制备工艺为:30 mL/min甲烷流量,100 V偏压,0.8A离子源电流;所制备的含氢掺硅类金刚石薄膜是非晶结构,膜厚2.20 μm,膜、基结合力为30 N,膜层硬度达到2039 HV.含氢掺硅类金刚石薄膜的摩擦因数受环境湿度变化很小,可应用于精密传动部件提高其使用精度.     

铝表面磁控溅射沉积不锈钢薄膜及其性能

在铝箔表面采用直流反应磁控溅射方法进行溅射试验,在铝箔表面沉积出不锈钢薄膜.采用磨损试验、盐雾试验、显微硬度试验和薄膜厚度测试等方法对试样进行检测,用扫描电镜和金相显微镜对试样表面形貌观察分析.试验结果表明,溅射功率选择在300 W时,在铝箔表面沉积不锈钢薄膜,铝箔表面耐磨性增大,硬度增大,沉积的不锈钢薄膜晶粒尺寸细小、均匀致密,表面呈金属光泽,薄膜与基体结合良好,并具有一定的耐蚀性能.     

溅射功率对射频磁控溅射Al掺杂ZnO(ZAO)薄膜性能的影响

用射频磁控溅射技术,在纯氩气氛中不同溅射功率（120 W~210 W）下于玻璃衬底上制备了Al掺杂ZnO（ZAO）薄膜。利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）、光谱仪和四探针测试仪等对所制备的薄膜进行了晶体结构、光学和电学性能分析。结果表明,纯氩气氛中不同溅射功率下玻璃衬底上原位沉积的ZAO薄膜具有明显的c轴择优取向性,它没有改变ZnO的六角纤锌矿结构;ZAO薄膜的可见光区平均透光率不强烈依赖于溅射功率,为75%左右;原位沉积ZAO薄膜的电阻率达到102Ω.cm数量级范围,随溅射功率由120 W增大到210 W时,薄膜电阻率从132.67Ω.cm降低到21.08Ω.cm。     

氮化铀薄膜的制备及性能研究

开展了氮化铀薄膜射频制备及薄膜性能研究,通过优化氮化铀薄膜的制备工艺条件,成功在Si基片上制备了氮化铀薄膜,并利用扫描电镜、原子力显微镜、X射线电子衍射、俄歇电子能谱仪和X射线光电子能谱对氮化铀薄膜进行了表面形貌和结构组分分析。结果表明:利用射频磁控沉积法制备的氮化铀薄膜为比较平整和致密的U2N3和UNxOy的混合相组成,具有一定的抗氧化腐蚀性能。     

一种制备P型氧化锌薄膜的方法

本发明公开的制备P型氧化锌薄膜的方法是利用磁控溅射法，在磁控溅射过程中，以金属锌为磁控溅射的靶，在工作气体氩气中另外通入氮气或氯气和氧气作为反应气，使磁控溅射真空室压强为10^-1～-10^0Pa，氮气流量与氩气流量的比在1：10—1：1范围内，氧气流量与氩气流量的比在0：1～1：1范围内，进行磁控溅射镀膜，获得氮氧锌薄膜，再将氮氧锌薄膜在大气或氧气氛中进行热处理，热处理温度在300—500℃范围内，处理时间为O．5—5h，制得P型氧化锌薄膜。本发明方法原理简单，载流子浓度控制方便，可操作性好。     

溶胶一凝胶法制备掺铝氧化锌薄膜

采用溶胶-凝胶工艺在普通玻璃片上制备了掺铝氧化锌薄膜.通过X-射线衍射(XRD)、原子力显微镜(AFM)对薄膜的组织结构和形貌进行了表征,结果表明:用溶胶-凝胶法制得的掺铝氧化锌薄膜为纤锌矿型结构,呈c轴方向择优生长,表面均匀、致密.通过紫外-可见透射光谱(UV)和标准四探针法对薄膜的光电性能进行了研究.试验发现,当铝离子掺杂浓度为4%(摩尔分数)、溶胶物质的量浓度为0.6mol/L、前处理温度为300℃时,薄膜在可见光区的透过率超过80%,且具有较好的导电性,电阻率为8.0×10-4Ω·cm.     

大气等离子喷涂Al2O3-3%TiO2涂层的性能

利用两种中频交流磁控溅射电源,溅射Al2O3含量为2%的两块氧化锌铝陶瓷靶材,在不同衬底温度的条件下制备得到了ZAO薄膜。研究了不同衬底温度条件下不同靶材和溅射电源对ZAO薄膜结构、电学和光学性能的影响。结果表明,制备得到的ZAO薄膜均具有c轴择优取向生长的晶体结构,在衬底温度为240℃时,得到的ZAO薄膜的电阻率低至1.4×10-3Ω·cm,可见光平均透过率在82%以上。     

溅射气压对ZnO透明导电薄膜光电性能的影响

采用射频磁控溅射方法,在普通玻璃上制备了具有高度c轴取向的ZnO薄膜,研究了溅射气压(0.2～1.5 Pa)对ZnO薄膜的微观结构和光电性能的影响.AFM、XRD、UV-Vis分光光度计及四探针法研究表明:随着溅射气压的增大,ZnO薄膜沿c轴方向的结晶质量提高,晶粒细化,薄膜表面更加致密,晶粒大小更加均匀;ZnO薄膜在400～900nm范围内的平均透过率均高于85%,其中在0.5～1.5 Pa范围内其透过率高于90%;样品在高纯氮气气氛中经350 ℃,300 s退火后,电阻率最低达到10-2 Ω-cm量级.     

Al掺杂ZnO薄膜的热处理工艺与性能研究

采用陶瓷烧结靶材、射频磁控溅射法制备了(002)择优取向的Al掺杂ZnO薄膜,着重研究了不同的热处理工艺对显微结构、光电性能的影响。结果表明,真空400℃退火能大幅提高ZAO薄膜的导电性能,并保持其平均透光率在85%以上,而非真空退火(大气环境)将使ZAO薄膜材料绝缘化,400℃真空退火时间或退火次数对导电性能无明显影响,但随退火时间和退火次数的增加薄膜组织恶化,在真空循环退火条件下尤为严重;经400℃真空退火的薄膜样品,其最低电阻率达8.4×10-4Ω.cm。     

Effect of substrate rotation speed on structure and properties of Al-doped ZnO thin films prepared by rf-sputtering

Al-doped ZnO (AZO) thin films were deposited on glass substrates by rf-sputtering at room temperature. The effects of substrate rotation speed (ω_S) on the morphological, structural, optical and electrical properties were investigated. SEM transversal images show that the substrate rotation produces dense columnar structures which were found to be better defined under substrate rotation. AFM images show that the surface particles of the samples formed under substrate rotation are smaller and denser than those of a stationary one, leading to smaller grain sizes. XRD results show that all films have hexagonal wurtzite structure and preferred c-axis orientation with a tensile stress along the c-axis. The average optical transmittance was above 90% in UV-Vis region. The lowest resistivity value (8.5×10^?3 Ω·cm) was achieved at ω_S=0 r/min, with a carrier concentration of 1.8×10²⁰ cm^?3, and a Hall mobility of 4.19 cm²/(V·s). For all other samples, the substrate rotation induced changes in the carrier concentration and Hall mobility which resulted in the increasing of electrical resistivity. These results indicate that the morphology, structure, optical and electrical properties of the AZO thin films are strongly affected by the substrate rotation speed.     

Zn靶与掺铝ZnO靶共溅射制备ZnO:Al薄膜及其性能

采用Zn靶和ZnO(掺2%Al2O3(质量分数))陶瓷靶在玻璃衬底上共溅射沉积Al掺杂ZnO薄膜,即ZnO:Al透明导电薄膜,研究Zn靶溅射功率(0～90 W)和衬底温度(室温、100℃和200℃)对薄膜结构、形貌、光学和电学性能的影响。结果表明:按双靶共溅射工艺制备的ZnO:Al薄膜的晶体结构均为六角纤锌矿结构,且随着Zn靶溅射功率的增加,薄膜的结晶质量呈现出先改善后变差的规律,薄膜中的载流子浓度逐渐升高,电阻率逐渐降低,而薄膜的光学性能受其影响不大;随着衬底温度的升高,薄膜的结晶性能得到改善,薄膜的可见光透过率增强,电阻率降低。     

Formation of crystalline Al-Ti-O thin films and their properties

The article reports on the effect of addition of Ti into Al₂O₃ films with Ti on their structure, mechanical properties and oxidation resistance. The main aim of the investigation was to prepare crystalline Al-Ti-O films at substrate temperatures T_s ≤ 500 °C. The films with three different compositions (41, 43 and 67 mol% Al₂O₃) were reactively sputtered from a composed Al/Ti target and their properties were characterized using X-ray diffraction (XRD), X-ray fluorescent spectroscopy (XRF), microhardness testing, and thermogravimetric analysis (TGA). It was found that (1) the addition of Ti stimulates crystallization of Al-Ti-O films at lower substrate temperatures, (2) Al-Ti-O films with a nanocrystalline cubic γ-Al₂O₃ structure, hardness of 25 GPa and zero oxidation in a flowing air up to ∼ 1050 °C can be prepared already at low substrate temperature of 200 °C, and (3) the crystallinity of Al-Ti-O films produced at a given temperature improves with the increasing amount of Ti. The last finding is in a good agreement with the binary phase diagram of the TiO₂-Al₂O₃ system.     

Preparation and properties of tungsten-doped indium oxide thin films

Tungsten-doped indium oxide (IWO) thin films were deposited on glass substrate by DC reactive magnetron sputtering. The effects of sputtering power and growth temperature on the structure, surface morphology, optical and electrical properties of IWO thin films were investigated. The thickness and surface morphology of the films are both closely dependent on the sputtering power and the substrate temperature. The transparency of the films decreases with the increase of the sputtering power but is not seriously influenced by substrate temperature. All the IWO thin film samples have high transmittance in near-infrared spectral range. With either the sputtering power or the growth temperature increases, the resistivity of the film decreases at the beginning and increases after the optimum parameters. The as-deposited IWO films with minimum resistivity of 6. 4× 10-4 Ω·cm were obtained at a growth temperature of 225 ℃ and sputtering power of 40 W, with carrier mobility of 33. 0 cm2· V-1·s-1 and carrier concentration of 2. 8× 1020 cm-3 and the average transmittance of about 81％ in near-infrared region and about 87％ in visible region.     

Microstructure, mechanical and electrochemical properties evaluation of pulsed DC reactive magnetron sputtered nanostructured Cr-Zr-N and Cr-Zr-Si-N thin films

Cr-Zr-Si-N thin films with various Zr contents were deposited by a bipolar asymmetric pulsed DC reactive magnetron sputtering system. In addition, a Cr-Zr-N film without Si addition was fabricated as a reference. The influence of Zr on the constitution, microstructure, mechanical, tribological and electrochemical properties of Cr-Zr-Si-N films was investigated. The microstructure of thin films was determined by a glancing angle X-ray diffractometer (GA-XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM), respectively. A nanoindenter, a Vickers micro hardness tester and pin-on-disk wear tests were adopted to evaluate the hardness, toughness and tribological properties of thin films, respectively. The electrochemical properties of thin films were also evaluated in 3.5 wt.% NaCl aqueous solution. In case of the Cr-Zr-Si-N films, the Si content was fixed around 6-8 at.% and various Zr contents ranging from 0.5 to 13.6 at.% were achieved by changing the Zr target power density. In comparison to the Cr-Zr-N reference film, the addition of ~ 7.0 at.% Si in Cr-Zr-Si-N films resulted in a refined columnar structure and enhanced mechanical and anti-corrosion properties. A lattice constant expansion of these films was observed with increasing Zr content. A nanostructured thin film with around 5-10 nm grain size was obtained in case of a Cr-13.6 at.% Zr-6.8 at.% Si-N film. In general, the hardness, plastic deformation resistance and corrosion resistance increased also with increasing Zr content in the Cr-Zr-Si-N films. The Cr-Zr-Si-N film containing 13.6 at.% Zr exhibited a combination of high hardness, good mechanical properties, adequate tribological performance and excellent corrosion resistance in this study.     

磁控溅射法制备SnS薄膜的结构和光学性能

利用磁控溅射法在FTO玻璃上制备了Sn S薄膜。采用X射线衍射仪、扫描电子显微镜和紫外可见分光光度计对不同溅射参数下制备的Sn S薄膜的晶体结构、表面形貌和光学性能进行研究,确定出制备Sn S薄膜的最优溅射参数。结果表明:溅射功率为28 W,沉积气压在2.5 Pa时,制备出的Sn S薄膜在(111)晶面具有最好的择优取向,薄膜微观形貌呈单片树叶状,晶粒粒径约370 nm,晶粒分布均匀,薄膜表面光滑致密;最优溅射参数下制备的Sn S薄膜的吸收系数可达到105cm-1,比其他方法制备的Sn S薄膜的吸收系数值高,禁带宽度为1.48 e V,与半导体太阳能电池所要求的最佳禁带宽度(1.5 e V)十分接近。     

Preparation and Properties Of ZnO:Al (ZAO) Thin Films Eposited by DC Reactive Magnetron Sputtering

采用磁控溅射技术制备了ZnO:Al(ZAO)薄膜。研究了不同的工艺参数对薄膜的组织结构和光电特性的影响.实验结果表明，多晶ZAO薄膜具有（001）择优取向且呈柱状生长，能量机制决定其微观生长状态。讨论了薄膜的内应力，高的沉积温度和低的溅射功率可有效减小薄膜的内应力。优化的ZAO薄膜电阻率和在可见光区的平均透射率可分别达到310-4-410-4cm和80%以上。