STM·IPC-205B型扫描隧道显微镜的技术与应用

扫描隧道显微镜(STM)作为纳米科技中最为有效和重要的检测加工手段之一,其应用随着纳米科技热的兴起而日益引起人们的重视。本文简述了STM·IPC-205B型机的工作原理及应用,以具体实例的STM扫描图像说明STM具有广阔的应用前景。     

纳米材料的几种扫描探针显微表征方法

扫描探针显微镜（SPM）作为一种广泛应用的表面表征工具,不仅可以表征三维形貌,还能定量地研究表面的粗糙度、孔径大小和分布及颗粒尺寸,在许多学科均可发挥作用.以纳米材料为主要研究对象,综述了国外最新的几种扫描探针显微表征技术,包括扫描隧道显微镜（STM）、原子力显微镜（AFM）和近场扫描光学显微镜（SNOM）等方法,展示了这几种技术在纳米材料的结构和性能方面的应用.     

激光原子力显微镜及其对光学表面粗糙度的研究

自一九八五年,Binnig与斯坦福大学的Quate和IBM公司苏黎士实验室的Christoph合作推出了世界上第一台原子力显微镜(简称AFM)以来,AFM的研究及应用迅速扩展。它不仅象扫描隧道显微镜那样能从原子尺度上对导体、半导体表面而且还能对非导体的表面进行成像,拓宽了STM的应用范围。     

基于STM的多模式扫描探针显微镜的建立

在已有的扫描隧道显微镜（STM）基础上设计了一套集STM、 光子扫描隧道显微镜（PSTM）、近场扫描光学显微镜（NSOM）、扫描近场声学显微镜（SNAM）为一体的多模式扫描探针显微系统（SPM）。系统的4种模式可通过转换开关方便地切 换,探头的更换也很容易。利用本系统对典型样品进行了扫描成像。测试表明,系统具有良好的稳定性和超高分辨率。     

AFM／STM的反馈控制系统研究及其设计

扫描隧道显微镜（ＳＴＭ）和原子力显微镜（ＡＦＭ）由于具有原子量级的分辨率，所以在表面物理、化学、生物等领域得到了越来越广泛的应用。但是，他们在工作上不能彼此兼容。为此，研制了一台新仪器，既可用作ＳＴＭ，又可作为ＡＦＭ。本文介绍了该仪器的反馈控制系统及其设计。实验表明，这套反馈系统工作稳定可靠，它使仪器至少可达到纳米量级的分辨率。     

电化学扫描探针显微镜在表面微/纳米加工的应用

概述了在固 /液界面微 /纳米加工中经常采用的三种电化学扫描探针显微镜 (EC SPM )技术 ,分别讨论了电化学扫描隧道显微镜 (EC STM )、电化学原子力显微镜 (EC AFM )和扫描电化学显微镜 (SECM )在应用于微 /纳米加工时的基本原理和各种方法 ,并综合比较和分析了这三种技术的优缺点     

AFM/STM系统中微悬臂的设计和研制

扫描隧道显微镜（ＳＴＭ）和原子力显微镜（ＡＦＭ）由于具有原子量级的分辨率,所以在表面物理、化学、生物等领域得到了越来越广泛的应用。我们研制了一个ＡＦＭ／ＳＴＭ系统,它利用隧道电流检测微悬臂的位移,既可用作ＡＦＭ,又可作为ＳＴＭ。本文介绍了这个系统的微悬臂的设计和研制。实验表明,这种微悬臂使系统可以达到纳米量级的分辨率。     

CD-AFM在45 nm节点半导体芯片检测过程中的应用

本文介绍了关键尺寸原子力显微镜（CD-AFM）在半导体芯片制造中的应用。通过对比现有的半导体检测仪器与原子力显微镜的工作原理和检测方法,详细探讨了原子力显微镜在目前的半导体芯片45nm节点工艺关键尺寸检测中的优势地位。根据芯片在线关键尺寸检测的具体要求,提出了原子力显微镜急待解决的相关研究内容。     

在SPM通用平台上开发特殊功能扫描探针显微镜

SPM通用平台是一套扫描探针显微镜开发工具系统,它提供了一种开发生产SPM新的思路和方法,使SPM成为通用、开放、兼容的仪器体系.本文介绍了SPM通用平台的原理、指标和在其上扩展扫描隧道显微镜、原子力显微镜等功能模块的方法,以及智能型SPM通用平台的研究思路.     

溶液中细胞色素b6f的原子力显微镜和扫描隧道显微镜观测

本文用原子力显微镜(atomic force microscope,AFM)和扫描隧道显微镜(scanning tunneling microscope,STM)在Tricine-NaOH-OG缓冲溶液中研究了细胞色素b6f(Cytochrome b6f,Cyt b6f)在固体表面上的吸附形态。首先用AFM观察了吸附在云母表面上的cyt b6f复合体,观察到了分散较好的蛋白质颗粒。进一步用高分辨率的电化学STM(EC-STM)观察了吸附在Au(111)表面上的cyt b6f分子,在浓度较低时发现了其二聚体的吸附形态,而在浓度较高时cyt b6f分子在Au(111)表面聚集成薄膜。     

基于STM的原子力显微镜的设计及应用

原子力显微镜由于不受物质导电性的限制,已经成为纳米检测和加工的重要手段之一。本文介绍了根据隧道效应检测微悬臂位移的原理自制的原子力显微镜系统,重点讲述了镜体结构及特点。测试结果表明该仪器具有原子量级的分辨率。最后还给出了用该原子力显微镜检测到的几幅试样的三维表面形貌图。     

数字扫描探针显微镜中的DSP技术

本文介绍了我们研制数字ＳＰＭ仪器时在ＤＳＰ芯片选型、ＳＰＭ－ＤＳＰ插卡设计、开发工具ＤＳＰ软件及其基本算法方面的考虑和解决方案并简介一种采用德州仪器公司ＴＭＳ３２０Ｃ５０ＤＳＰ芯片设计的ＳＰＭ仪器该仪器已实现ＳＴＭ模式、接触ＡＦＭ模式、非接触ＡＦＭ模式,并具有和多种ＳＯＰＭ头部接口的开放性结构。     

Photon emission from real surfaces in a scanning tunnelling microscope

The tunnelling electrons in a scanning tunnelling microscope (STM) may be able to induce photons containing information about the sample surface material using the high lateral resolution of an STM. By utilizing as much of the solid angle as possible, the luminescence is collected by an ellipsoidal mirror and focused on a photon counting system. In contrast to earlier assumptions, very low light intensities are emitted from real and technical specimen too. The photon map, recorded simultaneously with the topography at the metal and semiconductor surfaces, shows differences in the surface material and the coverage with adsorbates     

Surface analytical techniques

This review briefly describes some of the techniques available for analysing surfaces and illustrates their usefulness with a few examples. In particular, Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), sputter neutral mass spectroscopy (SNMS) and laser Raman spectroscopy are all described. In analysing a surface, AES and XPS would normally be considered first, with AES being applied where high spatial resolution is required and XPS where chemical state information is needed. SIMS and SNMS can be performed together and can detect smaller surface concentrations. Laser Raman spectroscopy is useful for determining molecular bonding. Techniques which give topographic information, such as scanning tunnelling microscopy (STM) and atomic force microscopy (AFM), have not been considered.     

纳米结构可重入STM/SEM超高真空多功能系统的研制

扫描隧道显微镜（ＳＴＭ）分辨率极高,是微观研究的重要仪器;但由于其视场小,样品易受污染等原因,在某些研究工作听应用受到了限制,扫描电子显微镜（ＳＥＭ）的最低放大倍数在十倍左右,视场可达２０ｍｍ＾２－３０ｍｍ＾２,可以引导扫描隧道显微镜进入试样预期的区域;另外超高真空的扫描电的样品室可以为扫描隧道显微镜提供清洁的工作环境,减少样品的污染。超高真空扫描电与扫描隧道显微镜的结合,可以弥补扫描隧道显微镜的     

High resolution potentiometry of planar electroformed MIM structures

Many attempts have been made to detect the current carrying filaments in electroformed metal-insulator-metal (MIM) structures (Pagnia and Sotnik 1988, Pagnia 1990). Transmission and scanning electron microscopes have been used without real success. Even experiments with the scanning tunnelling microscope (STM) could not definitely detect the filaments. We have mapped the potential distribution on an electroformed planar MIM diode (gold on quartz glass) with an STM and found usually only one (sometimes a few) sharp potential drop(s) in the microslit.     

Probe modification for scanning-probe microscopy by the focused ion beam method

The paper presents the results of experimental investigations into probe modification for atomic-force microscopy (AFM) and scanning tunneling microscopy (STM) by etching the point of AFM cantilevers and tungsten STM probes by applying the method of focused ion beams (FIBs). It is shown that the use of etching by the IB method allows one to obtain the probes with rounding that is less than 10 nm and with an aspect ratio of 1: 50. The application of these probes increases the resolution and the reliability of measuring by the AFM and STM methods. The obtained results can be used for developing the technological processes of production and modification of sensor probes for AFM and STM, as well as the methods for diagnostics of the structures of microelectronics, nanoelectronics and the microsystem and nanosystem technologies.     

Studies of chemically treated GaAs (100) surfaces by STM in air

Stable and reproducible images of photo-electrochemically passivated or alkaline etched GaAs (100) surfaces are obtained by a scanning tunnelling microscope (STM) working in air. Typically the surface roughness ranges around 10 nm at scanning areas down to 400 × 200 nm. Evaporation of Au after chemical treatment produces smoother surfaces which is possibly due to Au accumulation in deepenings.