Study of silicon solar cell at different intensities of illumination and wavelengths using impedance spectroscopy

The electrical properties of an n⁺–p–p⁺ structure-based single-crystalline silicon solar cell were studied by impedance spectroscopy, I–V and spectral response. The impedance spectrum is measured in dark, under different intensities (14, 43, 57, 71, 86, 100 mW/cm²) of illumination and wavelengths (400–1050 nm) of light. Under dark and at low intensities of illumination (<50 mW/cm²) the impedance spectra show perfect semicircles but at high intensities the semicircles are distorted at low frequencies. It is found that illumination provides an additional virtual R₁C₁ network parallel to the initial bulk R_pC_p network observed under dark conditions. The value of virtual resistance R₁ depends on the illumination wavelength and shows an inverse relationship with the spectral response of the device.     

Photovoltaic characteristics of phosphorus-doped amorphous carbon films grown by r.f. plasma-enhanced CVD

The phosphorus-doped amorphous carbon (n-C:P) films were grown by r.f. power-assisted plasma-enhanced chemical vapor deposition at room temperature using solid phosphorus target. The influence of phosphorus doping on material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, the solar cell properties such as series resistance, short circuit current density (J_sc), open circuit current voltage (V_oc), fill factor (FF) and conversion efficiency (η) along with the spectral response are reported for the fabricated carbon based n-C:P/p-Si heterojunction solar cell were measured by standard measurement technique. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm², 25 °C). The maximum of V_oc and J_sc for the cells are observed to be approximately 236 V and 7.34 mA/cm², respectively for the n-C:P/p-Si cell grown at lower r.f. power of 100 W. The highest η and FF were found to be approximately 0.84% and 49%, respectively. We have observed the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.     

Optical, electrical and photovoltaic characteristics of organic semiconductor based on oxazine/n-Si heterojunction

In this work, the construction and photoelectrical characterization of p-type organic semiconductor oxazine (OXZ) in junction with n-type silicon semiconductor are presented. The Stokes shift between absorption and emission of oxazine was analyzed. The analysis of the spectral behavior of the absorption coefficient (α) of OXZ, in the absorption region revealed a direct transition, and the energy gap was estimated as 1.82 eV. From the current–voltage, I–V, measurements of the Au/OXZ/n-Si/Al heterojunction in the temperature range 300–375 K, characteristic junction parameters and dominant conduction mechanisms were obtained. This heterojunction showed a photovoltaic behavior with a maximum open circuit voltage, V_oc, of 0.42 V, short-circuit current density, J_sc, of 3.25 mA/cm², fill factor, FF, of 0.35 and power conversion efficiency, η, of 3.2% under 15 mW/cm² white light illumination.     

New trends to grow the n-CdZn (S1−xSex)2/p-CuIn(S1−xSex)2 heterojunction thin films for solar cell applications

The n-CdZn(S_1−xSe_x) and p-CuIn(S_1−xSe_x)₂ thin films have been grown by the solution growth technique (SGT) on glass substrates. Also the heterojunction (p–n) based on n-CdZn (S_1−xSe_x)₂ and p-CuIn (S_1−xSe_x)₂ thin films fabricated by same technique. The n-CdZn(S_1−xSe_x)₂ thin film has been used as a window material which reduced the lattice mismatch problem at the junction with CuIn (S_1−xSe_x)₂ thin film as an absorber layer for stable solar cell preparation. Elemental analysis of the n-CdZn (S_1−xSe_x)₂ and p-CuIn(S_1−xSe_x)₂ thin films was confirmed by energy-dispersive analysis of X-ray (EDAX). The structural and optical properties were changed with respect to composition ‘x’ values. The best results of these parameters were obtained at x=0.5 composition. The uniform morphology of each film as well as the continuous smooth thickness deposition onto the glass substrates was confirmed by SEM study. The optical band gaps were determined from transmittance spectra in the range of 350–1000 nm. These values are 1.22 and 2.39 eV for CuIn(S_0.5Se_0.5)₂ and CdZn(S_0.5Se_0.5)₂ thin films, respectively. J–V characteristic was measured for the n-CdZn(S_1−xSe_x)₂/p-CuIn(S_1−xSe_x)₂ heterojunction thin films under light illumination. The device parameters V_oc=474.4 mV, J_sc=13.21 mA/cm², FF=47.8% and η=3.5% under an illumination of 85 mW/cm² on a cell active area of 1 cm² have been calculated for solar cell fabrication. The J–V characteristic of the device under dark condition was also studied and the ideality factor was calculated which is equal to 1.9 for n-CdZn(S_0.5Se_0.5)₂/p-CuIn(S_0.5Se_0.5)₂ heterojunction thin films.     

Photosensitization of nanocrystalline TiO2 films by a polymer with two carboxylic groups, poly (3-thiophenemalonic acid)

Photovoltaic devices were assembled using a conducting polymer; poly (3-thiophenemalonic acid) sensitized TiO₂ electrodes and an electrolyte containing I₃⁻/I⁻ redox couple. This cell exhibited a short-circuit photocurrent (J_sc) of 6.65 mA cm⁻², an open circuit voltage (V_oc) of 355 mV and an efficiency of 1.5% under the illumination of 100 mW cm⁻² (AM 1.5). Addition of an ionic liquid, 1-methyl 3-n-hexylimidazolium iodide, into the electrolyte led to an improvement in the cell performances, achieving an overall efficiency of 1.8% under the same illumination. The average cell characteristics of the later devices are , with a fill factor of 0.65.     

Properties of an n-C:P/p-Si carbon-based photovoltaic cell grown by radio frequency plasma-enhanced chemical vapor deposition at room temperature

The phosphorus-doped amorphous carbon (n-C:P) films were grown by radiofrequency (RF) power-assisted plasma-enhanced chemical vapor deposition (PECVD) at room temperature using a solid phosphorus target. The influence of phosphorus doping on the material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, solar cell properties such as series resistance, short-circuit current density, open-circuit current voltage, fill factor and conversion efficiency along with the spectral response are reported for the fabricated carbon-based n-C:P/p-Si heterojunction solar cells by standard measurement technique. The cells’ performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm², 25 °C). The maximum open-circuit voltage (V_oc) and short-circuit current density (J_sc) for the cells are observed to be approximately 236 V and 7.34 mA/cm², respectively, for the n-C:P/p-Si cell grown at a lower RF power of 100 W. The highest energy conversion efficiency (η) and fill factor (FF) were found to be approximately 0.84% and 49%, respectively. We have observed that the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.     

Characterization of CuInSe2/CdS thin-film solar cells prepared using CBD

CuInSe₂/CdS thin-film heterojunction solar cells were fabricated entirely by chemical bath deposition technique. The illuminated J−V characteristics of the devices prepared with different thicknesses of CdS and CuInSe₂ were studied. The typical solar cell parameters obtained for the best cell are: V_oc = 365 mV, J_sc = 12 mA/cm², FF = 61%, and η = 3.1% under an illumination of 85 mW/cm² on a cell of active area 0.1 cm². The J−V and C−V characteristics under dark condition and the spectral response were also studied for the best cell. The diode quality factor obtained is 1.7.     

Improved Jsc in CIGS thin film solar cells using a transparent conducting ZnO:B window layer

A comparative study of the cell performance of CIGS thin-film solar cells fabricated using ZnO:Al and ZnO:B window layers has been carried out. ZnO:B films were deposited by RF magnetron sputtering using an undoped ZnO target in a B₂H₆–Ar gas mixture. The short-circuit current (J_sc) was found to improve upon the replacement of the ZnO:Al layer with ZnO:B layers. This improvement in J_sc is attributed to an increase in quantum efficiency due to the higher optical transmission of the ZnO:B layer in the near-infrared region. The best cell fabricated with a MgF₂/ZnO:B/i-ZnO/CdS/CIGS/Mo structure yielded an active area efficiency of 18.0% with V_oc=0.645 V, J_sc=36.8 mA/cm², FF=0.76, and an active area of 0.2 cm² under AM 1.5 illumination.     

Quantum dot integration in heterostructure solar cells

InAs self-assembled quantum dots (SA-QDs) were incorporated into GaAlAs/GaAs heterostructure for solar cell applications. The structure was fabricated by molecular beam epitaxy on p-GaAs substrate. After the growth of GaAs buffer layer, multi-stacked InAs QDs were grown by self-assembly with a slow growth rate of 0.01 ML/s, which provides high dot quality and large dot size. Then, the structure was capped with n-GaAs and wide band gap n-GaAlAs was introduced. One, two or three stacks of QDs were sandwiched in the p–n heterojunction. The contribution of QDs in solar cell hetero-structure is the quantized nature and a high density of quantized states. I–V characterization was conducted in the dark and under AM1 illumination with 100 mW/cm² light power density to confirm the solar cell performance. Photocurrent from the QDs was confirmed by spectral response measurement using a filtered light source (1.1-μm wavelength) and a tungsten halogen lamp with monochromator with standard lock-in technique. These experimental results indicate that QDs could be an effective part of solar cell heterostructure. A typical I–V characteristic of this yet-to-be-optimized solar cell, with an active area of 7.25 mm², shows an open circuit voltage V_oc of 0.7 V, a short circuit current I_sc of 3.7 mA, and a fill factor FF of 0.69, leading to an efficiency η of 24.6% (active area).     

Boron-doped diamond-like amorphous carbon as photovoltaic films in solar cell

In this paper, the photovoltaic feature of metal-boron carbide-silicon (MCS) solar cell was reported. The boron-doped diamond-like carbon thin film on n-silicon substrate has been prepared using arc-discharge plasma chemical vapor deposition (PCVD) technique. The conductivity and the resistivity of the film were measured by Bio-Rad Hall5500PC system to be p-type semiconductor and 3–12 Ω cm/□, respectively. The boron content in the films was about 0.8–1.2%, obtained from Auger electron spectroscopy (AES), and some microcrystalline diamond grains (0.5–1.0 μm) embedded in the mainly amorphous network were revealed through scanning electron microscope (SEM) and Raman spectrum. The performance of Au/C(B)/n-Si heterojunction solar cells has been given under dark I–V rectifying curve and I–V working curve (with 100 mW cm⁻² illumination). A measurement of open-circuit voltage V_oc=580 mV and short-circuit current density J_sc=32.5 mA cm⁻² was obtained. Accordingly, the energy conversion efficiency of the device was tentatively determined to be about 7.9% in AM 1.5, 100 mW/cm² illuminated.     

High-efficiency CIGS solar cells with modified CIGS surface

CIGS films were treated in In–S aqueous solution for high-efficiency CIGS solar cells. The In–S aqueous solution contained InCl₃ and CH₃CSNH₂ (thioacetamide). The In–S treatment modified the CIGS surface favorably for high-efficiency CIGS solar cells as evidenced by the increase in V_oc, J_sc and FF. The In–S treatment formed thin CuInS₂ layer on the CIGS surface which contributes to the high efficiency and stable performance of the CIGS solar cell. The best cell showed an efficiency of 17.6% (V_oc=0.649 V, J_sc=36.1 mA/cm² and FF=75.1%) without any annealing and light soaking before I–V measurement.     

Bulk-heterojunction photovoltaic devices based on donor–acceptor organic small molecule blends

We present a systematic study on photovoltaic devices that combine an organic small molecule photoactive donor–acceptor bulk heterojunction system with controlled doping of the charge transport layers. The doped transport layers are formed using high vacuum co-evaporation deposition technique (i.e. co-sublimation of matrix and dopant). Solar cell devices have been fabricated based on zinc-phthalocyanine (ZnPc) as donor (D) and fullerene (C₆₀) as electron acceptor (A) with doped charge transport layers. The cells show a short circuit current, I_sc=1.5 mA/cm², an open circuit voltage, V_oc=450 mV, a fill factor, FF=0.5, and a power conversion efficiency, η_e=3.37% under sun (10 mW/cm²) white light illumination. In addition, these bulk-heterojunction photovoltaic devices were characterized under 1 sun (100 mW/cm²) white light illumination showing I_sc=6.3 mA/cm², V_oc=500 mV, and η_e=1.04%. We have observed that the performance of such ‘bulk-heterojunction’ photovoltaic devices is critically dependent on the transport properties of the interpenetrating network D/A system and doped charge transport layers.     

On the use of triethylamine hydroiodide as a supporting electrolyte in dye-sensitized solar cells

For the first time, the application of a molten salt, triethylamine hydroiodide (THI), as a supporting electrolyte was investigated for the dye-sensitized solar cells (DSSCs). Titanium dioxide (TiO₂) electrode was modified by incorporation of high- and low-molecular weight poly(ethylene glycol) along with TiO₂ nanoparticles of two different sizes (300 nm (30 wt%) and 20 nm (70 wt%)). The highest apparent diffusion coefficient (D) of 8.12×10⁻⁶ cm² s⁻¹ was obtained for I⁻ (0.5 M of THI) from linear sweep voltammetry (LSV). Short-circuit current density (J_sc) increases with the concentration of THI whereas open-circuit potential (V_oc) remains the same. Optimum J_sc (19.28 mA cm⁻²) and V_oc (0.7 V) with a highest conversion efficiency (η) of 8.45% were obtained for the DSSC containing 0.5 M of THI/0.05 M I₂/0.5 M TBP in CH₃CN. It is also observed that the J_sc and η of the DSSC mainly relates with the D values of I⁻ and charge-transfer resistances such as R_ct1 and R_ct2 operating along Pt/TiO₂ electrolyte interface, obtained from LSV and electrochemical impedance spectroscopy (EIS). For comparison, tetraethylammonium iodide (TEAI) and LiI were also selected as supporting electrolytes. Though both the THI and TEAI have similar structures, replacement of one methyl group by hydrogen improves the efficiency of the DSSC containing the former electrolyte. Further, the DSSC containing THI exhibits higher J_sc and η than LiI (7.70%), from which it is concluded that THI may be used as an efficient and alternative candidate to replace LiI in the current research of DSSCs.     

Blue sensitizers for solar cells: Natural dyes from Calafate and Jaboticaba

Blue-violet anthocyanins from Jaboticaba (Myrtus cauliflora Mart) and Calafate (Berberies buxifolia Lam) were employed as TiO₂ dye-sensitizers. Solar cells sensitized by Jaboticaba extracts achieved up to J_sc=9.0 mA cm⁻², V_oc=0.59 V, P_max=1.9 mW cm⁻² and ff=0.54, while for Calafate sensitized cells the values determined were up to J_sc=6.2 mA cm⁻², V_oc=0.47 V, P_max=1.1 mW cm⁻² and ff=0.36. Other natural dyes were evaluated without significant photocurrent, demonstrating that only selected extracts are capable of converting sunlight in electricity. The results obtained with extracts of Jaboticaba and Calafate show a successful conversion of visible light into electricity by using natural dyes as wide band-gap semiconductor sensitizers in dye-sensitized solar cells. It also represents an environmentally friendly alternative for dye-sensitized solar cells with low cost production and an excellent system for educational purposes.     

Method for analyzing series resistance and diode quality factors from field data Part II: Applications to crystalline silicon

The method described in a prior journal publication [1] is applied to the determination of module series resistance and diode quality factors for several crystalline silicon (c-Si) technology photovoltaic (PV) modules. This method makes use of the functional dependence of the slope of the current–voltage (I–V) characteristics at open circuit (R_oc) against the reciprocal of the short-circuit current density (J_sc), from multiple I–V curves taken under variable illumination. It is shown that calculations of the series resistance for six modules yield values in the range 1.0–1.6 Ω-cm², expressed in unit-cell area terms. The derived values for the series resistance (R_s) determined from the data are investigated for their effect on the module fill factor (FF) values and their dependence at higher light intensity levels. The diode quality factors also derived from the same data are shown to be somewhat larger than those obtained from the more canonical method — slope of the fit of the open-circuit voltage (V_oc) versus logarithm of J_sc. The differences between the two methods are explored within a two-diode model for c-Si. Deriving average values of diode quality factors for series-connected cells using either method is shown to exhibit problematic issues.     

Dye-sensitized nanocrystalline TiO2 solar cells based on novel coumarin dyes

We have developed dye-sensitized nanocrystalline TiO₂ solar cells (DSSCs) based on novel coumarin-dye photosensitizers. The absorption spectra of these novel dyes are red-shifted remarkably in the visible region relative to the spectrum of C343, a conventional coumarin dye. Introduction of a methine unit (–CH=CH–) connecting the cyano (–CN) and carboxyl (–COOH) groups into the coumarin framework expanded the π-conjugation in the dye and thus resulted in a wide absorption in the visible region. These novel dyes performed as efficient photosensitizers for DSSCs. A DSSC based on 2-cyano-5-(1,1,6,6-tetramethyl-10-oxo-2,3,5,6-tetrahydro-1H,4H,10H-11-oxa-3a-aza-benzo[de]anthracen-9-yl)-penta-2,4-dienoic acid (NKX-2311), produced a 6.0% solar energy-to-electricity conversion efficiency (η), the highest performance among DSSCs based on organic-dye photosensitizers, under AM 1.5 irradiation (100 mW cm^–2) with a short-circuit current density (J_sc) of 14.0 mA cm^–2, an open-circuit voltage (V_oc) of 0.60 V, and a fill factor of 0.71. Our results suggests that the structure of NKX-2311 whose carboxyl group is directly connected to the –CH=CH– unit, is advantageous for effective electron injection from the dye into the conduction band of TiO₂. In addition, the cyano group, owing to its strong electron-withdrawing ability, might play an important role in electron injection in addition to a red shift in the absorption region. On a long-term stability test under continuous irradiation with white light (80 mW cm^–2), stable performance was attained with a solar cell based on the NKX-2311 dye with a turnover number of 2.6×10⁷ per one molecule.     

Electrodeposition of p–i–n type CuInSe2 multilayers for photovoltaic applications

Copper indium diselenide polycrystalline thin films of p-, i- and n-type electrical conductivity were grown using a one-step electrodeposition process in a single bath. The bulk structure and the stoichiometry of the layers were determined using X-ray diffraction and X-ray fluorescence. The material composition was correlated with the electrical conductivity type variation, detected by the photoelectrochemical cell. Atomic force microscopy analysis showed copper-rich films deposited at low cathodic potentials (0.6 V vs Ag/AgCl) are of spherical and granular morphology and the grain sizes were 0.3–0.5 μm, while stoichiometric CIS films deposited at 1.0 V vs Ag/AgCl have grain sizes of 0.1–0.4 μm. The initial studies of optoelectronic properties (V_oc, J_sc and FF) of the four-layer solar cell devices (glass/FTO/n-CdS/n-CIS/i-CIS/p-CIS/Au) are presented.     

Electronic and photovoltaic properties of Al/p-Si/copper phthalocyanine photodiode junction barrier

Al/p-Si/copper phthalocyanine photovoltaic device has been fabricated and characterised by current–voltage and capacitance–voltage measurements. Electrical properties of the device were determined by current–voltage characterizations under dark and illumination conditions. The density distribution of the interface states of the photodiode was found to vary from 8.88×10¹² eV⁻¹ cm⁻² in E_ss-0.54 eV to 4.51×10¹² eV⁻¹ cm⁻² in E_ss-0.61 eV. The device shows a photovoltaic behaviour with a maximum open circuit voltage Voc of 0.16 V and short-circuits current I_sc of 0.45 μA under 3500 lux light intensity.     

Ultra-thin bifacial CdTe solar cell

Developing a high-quality transparent back contact, while maintaining efficient light transmission through the top absorber layer, are key components for achieving high-efficiency II–VI polycrystalline thin-film tandem solar cells. Combining these two elements, we fabricated ultra-thin bifacial CdTe solar cells (0.68 μm) with ZnTe:N/ITO transparent back contact and achieved efficiencies of 5.7% and 5.0% with illumination from the glass and the contact side, respectively. Device analysis, using (J–V) and QE measurements, show that the loss in efficiency is due to higher R_S and J₀ as well as lower, side-dependent, photons absorption.     

p-doped μc-Si:H window layers prepared by hot-wire CVD for amorphous solar cell application

We report on boron-doped μc-Si:H films prepared by hot-wire chemical vapor deposition (HWCVD) using silane as a source gas and trimethylboron (TMB) as a dopant gas and their incorporation into all-HW amorphous silicon solar cells. The dark conductivity of these films was in the range of 1–10 (Ω cm)⁻¹. The open circuit voltage V_oc of the solar cells was found to decrease from 840 mV at low hydrogen dilution H-dil=91% to 770 mV at high H-dil =97% during p-layer deposition which can be attributed to the increased crystallinity at higher H-dil and to subsequent band edge discontinuity between μc-Si:H p- and amorphous i-layer. The short circuit current density J_sc and the fill factor FF show an optimum at an intermediate H-dil and decrease for the highest H-dil. To improve the conversion efficiency and the reproducibility of the solar cells, an amorphous-like seed layer was incorporated between TCO and the bulk p-layer. The results obtained until now for amorphous solar cells with and without the seed layer are presented. The I–V parameters for the best p–i–n solar cell obtained so far are J_sc=13.95 mA/cm², V_oc=834 mV, FF=65% and η=7.6%, where the p-layers were prepared with 2% TMB. High open circuit voltages up to 847 mV could be achieved at higher TMB concentrations.