Characterization of tin dioxide film for chemical vapors sensor

Recently, oxide semiconductor material used as transducer has been the central topic of many studies for gas sensor. In this paper we investigated the characteristic of a thick film of tin dioxide (SnO₂) film for chemical vapor sensor. It has been prepared by screen-printing technology and deposited on alumina substrate provided with two gold electrodes. The morphology, the molecular composition and the electrical properties of this material have been characterized respectively by Atomic Force Spectroscopy (AFM), Fourier Transformed Infrared Spectroscopy (FTIR) and Impedance Spectroscopy (IS). The electrical properties showed a resistive behaviour of this material less than 300 °C which is the operating temperature of the sensor. The developed sensor can identify the nature of the detected gas, oxidizing or reducing.     

Development of a protected gas sensor for exhaust automotive applications

A /spl beta/-alumina-based gas sensor for automotive exhaust application (hydrocarbon, CO, NO/sub 2/ detection in 10-1000 ppm concentration range) has been developed by thick film technology (screen-printing) in the frame of a European project. The sensing device consists of a solid electrolyte (/spl beta/ alumina) and of two metallic electrodes having different catalytic properties, the whole system being in contact with the surrounding atmosphere to be analyzed. The detection principle is based on the chemisorption of oxygen which leads to a capacitance effect at the metal-electrolyte interface, resulting in a measurable difference of potential depending on nature and concentration of pollutants and on the sensor temperature. For application in exhaust pipe, a porous protective layer based on /spl alpha/-alumina for preserving the sensing material and the metal electrodes from contamination and deterioration was screen-printed on the sensing element. For limiting the possible interface interactions between the overlapped layers, a new concept of screen -printable ink was set up based on mixing the oxide powder and its gelly precursor without any inorganic binder addition. The performances of the sensor were tested both on laboratory and engine bench. The sensitivity is relevant for exhaust application, and the long-term stability is improved by the protective layer.     

Fabrication of gradient optical filter containing anisotropic Bragg nanostructure

New gradient optical filters containing asymmetric Bragg structure were prepared from the distributed Bragg reflector (DBR) porous silicon (PSi). Anisotropic DBR PSi displaying a rainbow-colored reflection was generated by using an asymmetric etching configuration. Flexible anisotropic DBR PSi composite films were obtained by casting of polymer solution onto anisotropic DBR PSi thin films. The surface and cross-sectional images images of anisotropic DBR PSi composite films obtained with cold field emission scanning electron microscope indicated that the average pore size and the thickness of porous layer decreased as the lateral distance increased. As lateral distance increased, the reflection resonance shifted to shorter wavelength.     

Low-concentration NO/sub 2/ detection with an adsorption porous silicon FET

Adsorption porous silicon FET (APSFET) is a porous silicon (PS)-based device constituted of a FET structure with a porous adsorbing layer between drain and source. Adsorbed gas molecules in the porous layer induce an inverted channel in the crystalline silicon under the PS itself. The mobile charge per unit area in the channel depends on the molecular gas concentrations in the sensing layer so that adsorbed gas molecules play a role similar to the charge on the gate of a FET. In this work, NO/sub 2/ detection by using the APSFET is demonstrated for the first time. NO/sub 2/ concentration as low as 100 ppb was detected. Devices with both as-grown and oxidized PS layers were fabricated and compared in order to investigate the effect of a low-temperature thermal oxidation on the electrical performances of the sensor. Nonoxidized sensors show a high sensitivity only for fresh devices, which reduces with the aging of the sample. Oxidation of the PS layer improves the electrical performance of sensors, in terms of stability, recovery time, and interference with the relative humidity level, keeping the high sensitivity to nitrogen dioxide.     

ZIF-67修饰WO3纳米片的制备及其气敏性能

金属氧化物半导体气敏传感器在有毒有害气体检测领域逐渐表现出巨大的应用前景,但是金属氧化物半导体传感器通常在检测时受环境湿度影响较大,这极大地限制了其应用。本文采用水热法成功在陶瓷管表面原位生长WO₃纳米片,并以此为基底,在其表面生长ZIF-67多孔材料,通过调控W和Co的比例制备了不同比例的ZIF-67/WO₃复合材料,利用XRD、SEM、FTIR和比表面积测试仪(BET)等方法对所制备的材料进行物相和形貌表征。针对其不同比例的复合材料的气敏性能进行了研究。结果表明:W∶Co摩尔比为 1∶1的ZIF-67/WO₃(1∶1)复合材料性能最好,在220℃对三乙胺表现出优异的选择性,对体积分数为100×10?6的三乙胺的响应值可达140.34,响应和恢复时间分别为9 s和7 s。研究了空气相对湿度(RH)对ZIF-67/WO₃(1∶1)传感器的影响,结果表明,在高达75%RH环境下该材料仍能保持较好的响应值,相对于纯WO₃气敏材料具有较好的抗湿性能。      

Porous silicon a useful imperfection

When semiconductor developers noticed in the 1950s that electropolishing of bulk silicon left certain areas rougher than the rest and somewhat porous, they regarded these simply as imperfect areas. It was not until Leigh Canham, a scientist with DERA (the UK’s Defence Evaluation and Research Agency), discovered in 1990 that porous silicon (PSi) emits visible light when activated by external ultraviolet sources¹ that this morphological state of the material came to attract significant research interest. Elementary photonic sensors were soon proposed. In 1992 researchers discovered that PSi also emits light when an electric current is applied, a finding that raised prospects for new optronic sensors and other devices coupling light to electronics, including future high-speed computers. Technology extensions have since been found that make the material chemi- and bio-luminescent as well as photo- and electro-luminescent.In sight by the mid- to late-1990s, therefore, was a whole new class of solid-state sensors offering significant advantages over solid-state gas and other sensors. Many of these were based on bulk silicon and semiconducting oxides such as tin or indium oxide and alumina. Compared with them, PSi offers a high surface area-to-volume ratio and hence high reactivity and, as researchers have established, a porous structure whose morphology could be engineered for high selectivity to particular molecules. Along with high sensitivity and selectivity, comes a rapid response time.     

Fabrication of porous Pt-Pd electrodes using solid state interdiffusion

Partial burnt off process of sacrificial material while fabricating porous electrode for gas sensors and fuel cells brings uncertainties about reaction of gas species with remained sacrificial material. Here, efforts were devoted to fabricate a porous electrode with high electrical conductivity without using sacrificial carbon material. To do so, bilayers of Pt/Pd were deposited over Yttria Stabilized Zirconia substrate and thermally treated at 500 °C for different annealing times. As a result of annealing, solid state interdiffusion between Pt and Pd was activated resulting to generation of Pd accompanied with pores on the surface of Pt layer. Moreover, 10 min annealing leads to higher electrical conductivity of intermixed layer which is most probably due to a reduction in grain boundary resistivity of the host material. It has been shown that 10 min annealed bilayers of Pt/Pd exhibit promising characteristics in terms of porosity and electrical conductivity. It was concluded that solid state interdiffusion was introduced as an effective method to fabricate porous conductive layers which has potential applications in gas sensors and fuel cells.     

A technique for the fabrication of various multiparametric porous silicon samples on a single substrate

Porous silicon (PSi) samples generally have a uniform thickness and pore size according to specific anodization conditions, as the Si wafer is entirely immersed into hydrofluoric (HF) acid during the anodization process. In contrast, multiparametric (MP) PSi, as described in the present work, is fabricated by inserting a Si wafer gradually (or by stages) into a HF solution during the anodization process. Consequently, MP-PSi allows single layer fabrication with a pore-size and layer thickness gradient or various multilayers, on a single substrate. Therefore, MP-PSi can be readily used in sensor application areas to determine optimized detection conditions for various materials, such as gas, liquid, and bio-materials. MP-PSi layer with a lateral pore gradient distribution can also be used as size-exclusion matrix. In addition, the MP-PSi multilayer array is expected to open up application areas involving optical electronic nose systems.     

An optical gas sensor based on ellipsometric readout

A gas sensor system based on ellipsometric readout is presented. It includes a gas chamber and a compact ellipsometer operated in off- mode. Small, low-cost optical components are used to demonstrate that this advanced methodology can be implemented in simplified instrumentation. The off- ellipsometric sensing principle and transducer mechanisms of the sensing layers, as well as the instrumentation, are described. The application of the sensor system is exampled with experimental results on low-concentration alcoholic gases (methanol, ethanol, and 2-propanol) using porous silicon as a sensing layer. Optimization of the optics of the sensor system, improvement of sensitivity or alteration of selectivity by modification of sensing layers, and multisensing by using several ellipsometric units in parallel are discussed.     

Effect of ultraviolet illumination and ambient gases on the photoluminescence and electrical properties of nanoporous silicon layer for organic vapor sensor

The purpose of this research, the nanoporous silicon layer were fabricated and investigated the physical properties such as photoluminescence and the electrical properties in order to develop organic vapor sensor by using nanoporous silicon. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during ultraviolet illumination in various ambient gases such as nitrogen, oxigen and vacuum. In this paper, the nanoporous silicon layer was used as organic vapor adsorption and sensing element. The advantage of this device are simple process compatible in silicon technology and usable in room temperature. The structure of this device consists of nanoporous silicon layer which is formed by anodization of silicon wafer in hydrofluoric acid solution and aluminum electrode which deposited on the top of nanoporous silicon layer by evaporator. The nanoporous silicon sensors were placed in a gas chamber with various organic vapor such as ethanol, methanol and isopropyl alcohol. From studying on electrical characteristics of this device, it is found that the nanoporous silicon layer can detect the different organic vapor. Therefore, the nanoporous silicon is important material for organic vapor sensor and it can develop to other applications about gas sensors in the future.     

Fabrication of human IgG sensors based on porous silicon interferometer containing Bragg structures

A simply modified biosensor based on protein A-modified distributed Bragg reflectors (DBR) porous silicon (PSi) chip for the detection of human immunoglobin G (IgG) are developed. The fabrication, optical characterization, and surface derivatization of DBR PSi are investigated. The sensor system studied consist of multi-layer of porous silicon modified with protein-A. The sensor is operated by the measurement of the reflection peak in the white light reflection spectrum. Molecular binding is detected as a shift in wavelength of reflection peaks.     

Laser Gas Alloying of Titanium – New Possibilities for Severe Wear Loaded Components in Medicine

To eliminate present difficulties at laser gas alloying of titanium as not sufficient control of nitrogen content, inadequate oxygen exclusion and pronounced crack formation tendency, a new technology was developed. It is based on a special copper made inert gas bell that ensures on‐line controlled constant treatment parameters and reduced cooling velocity. So it is possible to adjust the properties of the laser gas alloyed layers. The thickness can be varied between 0.1 to 1.5 mm and the hardness can be adapted to the application in the range of 500 HV to 1200 HV. Such gas alloyed layers have very high resistance against abrasive and sliding wear. An additional hard amorphous carbon layer (Diamor™) deposited by Laser‐Arc technology on the gas alloyed layer can be used for achieving minimal friction coefficients in case of sliding wear. The gas alloyed layer can also be used for supporting other films like TiN to increase their bearing load. Results of fatigue tests of gas alloyed layers are presented as well as results of different wear tests.     

基于激光直写的柔性天线传感器研究

激光直写是一种高效、可规模化制备柔性电子器件的技术。本文采用激光直写技术在具有良好介电性能的聚酰亚胺薄膜上制备了一种可用于应变传感和湿度传感的柔性环形天线传感器。利用激光碳化聚酰亚胺获得的材料表面呈现多孔及堆叠片层碳结构,当施加于天线上的应变和环境湿度改变时,天线的谐振频率会发生规律变化,进而实现应变和湿度感知。制备的环形天线传感器的应变响应灵敏度为?8.943 kHz/με,湿度响应灵敏度为?6.45 MHz/RH%。采用激光直写技术制备的天线传感器可以广泛应用于结构健康监测等领域。     

Vibrating capacitor method in the development of semiconductor gas sensors

Adsorption usually results in work function shifts on catalytically active surfaces such as semiconductor gas sensors. The purpose of the present article is to summarise the capabilities of the vibrating capacitor from the simplest adsorption-induced work function tests to the scanning, vibrating, capacitor-yielded olfactory pictures and other chemical pictures. After a brief history and review of theoretical bases, the latest results will be discussed in detail. Olfactory pictures from semiconductor surfaces give a new chance to improve the selectivity of gas analysis. Chemical pictures from thin SnO₂ layers produced by atomic layer epitaxy reveal the inhomogeneities of the technology. CPD maps taken from Pd nanolayer (activator)-covered surfaces help to find the best layer-depositing parameters for the activation process of the thin semiconductor gas sensor films.     

高速列车车体轻量化层状复合结构隔声设计

随着高速列车车体结构轻量化的发展,层状复合结构车体在高速列车上得到广泛应用,提高层状复合结构的隔声性能,是高速列车减振降噪的关键技术。基于传递矩阵法,建立"铝板+多孔材料层+空气层+碳纤维增强板"的典型高速列车层状复合结构车体隔声计算分析模型,并分析多孔材料和空气层对层状复合结构车体隔声性能的影响。结果显示,混响声场激励下,在铝板和碳纤维增强版之间仅增加空气层只能提高车体结构高频隔声量,低频部分会由于"板-空气-板"的系统耦合共振,形成显著吻合谷,导致其隔声性能在吻合谷频率处大幅下降。对此,利用多孔材料吸声原理,提出在空气层中增加吸声材料层,抑制隔声吻合低谷,通过优化设计,得出"铝板+空气层+吸声材料+空气层+碳纤维增强板"的优化结构形式,在实现车体轻量化目标同时,可有效提高其隔声性能。     

Gasar—A new Class of Porous Materials

The paper summarizes published data and also deals with technology, structure, applications, and properties of gasars – new porous materials based on original findings obtained by authors. The method consists of melting a material in a gas atmosphere to saturate it with hydrogen and directional solidifying under strictly controlled thermodynamic and kinetic conditions. The materials produced by this method, have a monolithic matrix and pores of proper geometric shapes, providing to gasars higher strength, plasticity, thermal and electrical conductivities as compared with those of other porous materials. Gasar is recommended for prospective application as filters, bearings, metal‐matrix composites.     

Electrochemical studies of nano-structured diamond thin-film electrodes grown by microwave plasma CVD

In this paper, we report the investigation of the electrochemical properties of nano-structured diamond thin-film electrodes on porous silicon (PSi) synthesized by microwave plasma chemical vapor deposition (MPCVD). For the application, boron-doped and undoped diamond thin film has been performed and fabricated into an electrode device, and its microstructure, electrical and chemical properties have been studied. In order to enlarge the surface area of diamond electrodes, a negative bias was applied to the MPCVD process to deposit diamond thin film in a nano-structured form, so that its surface remained rough and nano-fine structured. Diamond thin films were analyzed by Raman spectroscopy and SEM. The morphology of boron-doped diamond thin films on PSi reveals nano-rods in the shape of diamond crystallites. Their electrochemical properties were evaluated by performing cyclic voltammetry (CV) measurement in inorganic K₄[Fe(CN)₆] in a K₂HPO₄ buffer solution. Boron-doped diamond thin film on PSi has demonstrated good electrochemical properties, with a larger redoxidation current of CV, due to its rough surface, which provides a more active electrochemical interface.     

复合材料层间应变测试实验

复合材料受到应力作用层间会产生变形,应力过大层间会出现撕裂的现象。针对这一问题, 利用光纤法珀应变传感器与复合材料层间间隙尺寸相当的特点,将该传感器置入复合材料层间,在万能拉伸仪上进行复合材料应变测试实验。实验表明:利用光纤法珀应变传感器检测复合材料层间应变的方法是完全可行的。     

Hybrid organic–inorganic porous semiconductor transducer for multi-parameters sensing

Porous silicon (PSi) non-symmetric multi-layers are modified by organic molecular beam deposition of an organic semiconductor, namely the N,N′-1H,1H-perfluorobutyldicyanoperylene-carboxydi-imide (PDIF-CN₂). Joule evaporation of PDIF-CN₂ into the PSi sponge-like matrix not only improves but also adds transducing skills, making this solid-state device a dual signal sensor for chemical monitoring. PDIF-CN₂ modified PSi optical microcavities show an increase of about five orders of magnitude in electric current with respect to the same bare device. This feature can be used to sense volatile substances. PDIF-CN₂ also improves chemical resistance of PSi against alkaline and acid corrosion.     

Optimisation of distributed feedback laser biosensors

A new integrated optical sensor chip is proposed, based on a modified distributed- feedback (DFB) semiconductor laser. The semiconductor layers of different refractive indices that comprise a laser form the basis of a waveguide sensor, where changes in the refractive index of material at the surface are sensed via changes in the evanescent field of the lasing mode. In DFB lasers, laser oscillation occurs at the Bragg wavelength. Since this is sensitive to the effective refractive index of the optical mode, the emission wavelength is sensitive to the index of a sample on the waveguide surface. Hence, lasers are modelled as planar waveguides and the effective index of the fundamental transverse electric mode is calculated as a function of index and thickness of a thin surface layer using the beam propagation method. We find that an optimised structure has a thin upper cladding layer of ~0.15 mum, which according to this model gives detection limits on test layer index and thickness resolution of 0.1 and 1.57 nm, respectively, a figure which may be further improved using two lasers in an interferometer-type configuration.