共查询到20条相似文献,搜索用时 15 毫秒
1.
G.H. Dobrikov M.M. Rassovska S.I. Boyadzhiev T.M. Ivanova D.I. Nazarowa 《Thin solid films》2009,518(4):1091-1094
The aim of this work is the preparation of RF sputtered indium-tin oxide (ITO) thin films for application as transparent heat mirrors. The heat mirrors are important elements for the photothermal solar energy conversion. In combination with moderate spectral selectivity of the solar absorbers they could increase the efficiency of the solar collector. The optical properties of ITO and double-layer ITO with titanium dioxide (TiO2) structures in the visible and infrared ranges were investigated. The films were deposited on glass substrates by RF sputtering technique. Tin-doped indium, as well as titanium targets was used. The influence of the In-Sn target composition and the deposition parameters on the film properties were studied. The films' surface morphology and structure were investigated by SEM, TEM and XRD, the composition was studied applying electron probe microanalyzer (EPMA). The thicknesses of the films were determined by the laser ellipsometry method. The measurements in the infrared range were performed on Fourier transform infrared spectrophotometer (FTIR). The single layer ITO structures showed reflectance in the infrared range not exceeding 50% at longer wavelengths. The double layer structures with TiO2 under layer showed increased reflectance in the infrared range with high visible transmittance reaching 85%. 相似文献
2.
3.
退火对反应磁控溅射制备ITO薄膜性能影响 总被引:1,自引:0,他引:1
采用铟锡合金靶 (铟 锡 ,90 - 10 ) ,通过直流反应磁控溅射在玻璃基片上制备出ITO薄膜 ,并在大气环境下高温退火处理。研究了退火温度对薄膜结构、光学和电学性能的影响。研究表明 ,随着退火温度升高薄膜的电学特性得到很大提高 相似文献
4.
本实验的ITO薄膜样品是利用直流磁控溅射技术在玻璃基片上沉积而成的。通过改变溅射功率,研究不同溅射功率对ITO薄膜光学性能的影响。经各实验测试后发现:在实验给定的功率区间内,ITO薄膜的厚度随着溅射功率的增加而增加,其可见光透过率则随之降低。 相似文献
5.
采用直流反应磁控溅射法制备了ITO透明导电薄膜,针对氧流量、溅射气压、溅射电流3种工艺参数对ITO薄膜电阻率和可见光区透射率的影响进行了分析和研究。结果表明:从ITO薄膜作为太阳电池用减反射层和电极出发,得到了工艺参数的优化值,分别为氧流量0.2 ml/min(标准状态),溅射气压3 Pa和溅射电流0.2 A,ITO薄膜的电阻率为3.7×10-3Ω.cm,透过率(550 nm)高达93.3%。另外,利用该优化工艺条件下制备的ITO薄膜作为电极和减反射层,制备了结构为ITO/n+-nc-Si∶H/-i nc-Si:H/p-c-Si/Ag的太阳能电池,电池开路电压Voc达到534.7mV,短路电流Isc达到49.24mA(3 cm2),填充因子为0.4228。 相似文献
6.
W. J. Lee Y. K. Fang J.-J. Ho C.-Y. Chen S.-F. Chen R.-Y. Tsai D. Huang F. C. Ho 《Journal of Materials Science: Materials in Electronics》2002,13(12):751-756
In this paper, indium tin oxide (ITO) films were prepared by bipolar d.c.-pulsed magnetron sputtering in a mixture of argon and oxygen onto unheated glass substrates. A target of ITO with 10 weight percent (wt %) tin was used. The influences of ratios of t–
on/t+
on (negative pulse-on time/positive pulse-on time) on the optical, electrical, and structural properties of ITO films have been investigated. The correlations between the deposition parameters and the film properties were discussed. An optimal condition based on reactive bipolar d.c.-pulsed sputtering for obtaining high transmittance, low resistivity, and low surface roughness of ITO films with high deposition rate is suggested. Then, ITO films grown at room temperature by bipolar d.c.-pulsed sputtering were used to form electrochromic devices of WO3. Better electrochromic performances were found in comparison to those measured with commercially available ITO films on glass substrates. 相似文献
7.
Hwang JC Choi MC Ha Y Kim CW Kim Y Kim I Ha CS 《Journal of nanoscience and nanotechnology》2011,11(1):550-554
The imide-functionalized polynorbornene films exhibited excellent optical transparency in the visible range as well as high thermal stability over 200 degrees C. The indium tin oxide (ITO) thin films were coated on the imide-functionalized polynorbornene films at various deposition temperatures by employing radio-frequency (r.f.) planar magnetron sputtering system. The resulting ITO-coated imide-functionalized polynorbornene substrates showed good electrical and optical properties, while the figure of merit examination revealed that the present substrates are comparable to conventional ITO-glass substrates. This was confirmed from the preliminary result of organic light-emitting devices fabricated using the imide-functionalized polynorbornene substrates. 相似文献
8.
Variations in microstructure and composition of indium tin oxide films with the deposition technique
M. Rottmann H. Hennig B. Ziemer R. Kalähne K. H. Heckner 《Journal of Materials Science》1996,31(24):6495-6500
Indium tin oxide (ITO) films have been deposited by reactive d.c.-sputtering and also by the reactive thermal evaporation technique onto glass substrates. The relationship between the microstructure and composition of the ITO films was found to strongly depend on the deposition technique. In addition the application of pure water vapour as the reactive sputtering atmosphere and its influence on the structural and compositional properties of the ITO films has been studied.X-ray diffraction investigations showed that all the films exhibited the bixbite structure of In2O3. No other crystalline phases were observed. Highly crystallized ITO films have been obtained using the reactive thermal evaporation technique. These films show a large average grain size of about 80 nm and a very homogeneous morphology. In contrast the d.c.-sputtered ITO films have a smaller average grain size and a characteristic texture. All deposited ITO films show an enlarged lattice constant compared to that of In2O3. A strong dependence of the chemical composition of the ITO films on the deposition technique and parameters was detected. 相似文献
9.
10.
Guisheng Zhu Zupei Yang 《Journal of Materials Science: Materials in Electronics》2013,24(10):3646-3651
Indium tin oxide (ITO) thin films were deposited on quartz substrates by radio frequency (RF) sputtering with different RF power (100–250 W) using the powder target at room temperature. The effect of sputtering power on their structural, electrical and optical properties was systematically investigated. The intensity of (400) orientation clearly increases with the sputtering power increases, although the films have (222) preferred orientation. Increasing sputtering power is benefit for lower resistivity and transmittance. The films were annealed at different temperature (500–800 °C), then we explored the relationship between their electro-optical and structural properties and temperature. It has been observed that the annealed films tend to have (400) orientation and then show the lower resistivity and transmittance. The ITO thin film prepared by RF sputtering using powder target at 700 °C annealing temperature and 200 W sputtering power has the resistivity of 2.08 × 10?4 Ω cm and the transmittance of 83.2 %, which specializes for the transparent conductive layers. 相似文献
11.
E. N. Sheftel E. E. Shalygina G. Sh. Usmanova S. I. Utitskikh M. A. Mukasheva M. Inoue R. Fujikawa 《Technical Physics Letters》2007,33(10):881-885
We have studied the influence of thermal annealing on the magnetic properties and microstructure of 0.7-μm-thick Fe-ZrN nanocomposite films obtained by a reactive RF magnetron sputtering technique on non-conductive substrates. The near-surface and bulk magnetostatic characteristics of the films were studied using magnetooptical and vibrating-sample magnetometers, respectively. The microstructure was determined by X-ray diffraction. It was established that the magnetic characteristics strongly depend on the annealing temperature. These dependences are explained by structural changes induced in the films by the thermal treatment. 相似文献
12.
13.
为明确溅射偏压对ITO薄膜性质的影响,用射频磁控溅射法于室温在玻璃衬底制备出ITO透明导电薄膜,研究了不同偏压下ITO薄膜的生长模式、光学和电学性能.结果表明:随着偏压的增加,薄膜沉积模式经历了沉积、沉积和扩散、表面脱附3种方式;AFM和SEM显示,偏压为100 V时,膜层表面光洁、均匀,粗糙度最小,均方根粗糙度为1.61 nm;XRD分析表明偏压会影响与薄膜的择优取向,偏压为100 V时,薄膜晶粒取向为(222)面;薄膜偏压为120 V时,薄膜的光电性能最佳,电阻率最低为2.59×10-4Ω.cm,可见光区的平均透过率在85%以上;偏压的大小使薄膜的吸收边发生了"蓝移"或"红移". 相似文献
14.
在室温下,利用射频磁控反应溅射法分别在硅片和石英玻璃上制备ZnO薄膜。通过控制O2/Ar流量比,研究O2/Ar流量比对ZnO薄膜的微结构、表面形貌及其光致发光特性的影响。X射线衍射仪和原子力显微镜结果显示,当O2/Ar流量比为3∶4时,所得薄膜结晶度最佳,表面粗糙度为0.725 nm;荧光光谱显示,ZnO薄膜在波长407 nm附近出现紫光发光峰,该发光峰源于氧空位浅施主能级到价带顶的电子跃迁,发射强度随O2/Ar流量比的增加先减小后增加。 相似文献
15.
1. Introductiontransparent conductive indium tin oxide (ITO)films have been extensively used in a variety of electronic and opto--electronic applications because oftheir high transmission in the visible range, high infrared (IR) reflection, and low electrical resistivity.A variety of deposition techniques have been appliedto fabricate ITO films such as CVD, spray pyrolysisand sputteringll'2]. However, sputtering is the mostextensively used technique especially in industry. Recelltly, targe… 相似文献
16.
Xianjie Zhou Jiwen Xu Xiaosheng Tang Qiuping Wei Zhiming Yu 《Journal of Materials Science: Materials in Electronics》2017,28(5):3997-4003
As one kind of well known amorphous transparent conductive oxide films, In–Ga–Zn–O (IGZO) based films were broadly used as electric functional layer in optoelectronic devices. As IGZO film is sensitive to temperature and oxygen, and its electrical and optical properties may probably be deteriorated after subsequent high temperature and air atmosphere. In this work, amorphous indium tin oxide (ITO) layer with two adjustable type of thickness were employed to improve the thermal stability of IGZO films. The doubled ITO/IGZO films were deposited on glass by magnetron sputtering and annealed at high temperatures subsequently to investigate its thermal stability. Accordingly, the crystal structure, optical and electrical properties of ITO/IGZO films were further studied. The XRD results demonstrated that the annealed IGZO films could keep amorphous structure, and the ITO/IGZO films were consisted of uniform small particles which showed comparable dense structure and closely integration with the glass substrate. Furthermore, the sheet resistance results indicated that the increased thickness of top ITO film could suppress oxygen and improve thermal stability of electrical property. Moreover, the transmittance in the visible range was about 85%, and showed a little increase after annealing. The protective ITO layer was found to keep improved thermal stability, good electrical and optical properties at temperatures up to 550 °C. 相似文献
17.
18.
19.
利用射频磁控溅射在玻璃衬底上制备了氧化铟锡(ITO)薄膜,分别采用两种方法对薄膜进行氮化处理,即:(1)利用氩气溅射在室温下制备薄膜,随后在氮气和氨气气氛下对薄膜进行热处理;(2)利用氩气/氮气共溅射成膜.利用X射线衍射、霍尔效应、UV-vis-NIR分光光度计等测试手段对薄膜样品进行表征,对比研究了两种氮化处理方法对ITO薄膜光电特性的影响.结果发现对于低温生长的薄膜,两种方法均能明显提高其在可见光区的透过率.氩气/氮气共溅射的方法会降低薄膜的结晶程度,降低载流子浓度,但使得其紫外/可见/近红外光谱发生明显红移;而热处理方法则能增加薄膜的结晶程度,提高其导电能力. 相似文献
20.
In this study, we investigated the possibility of using Zn-doped ITO film as an alternative material for conventional SiO2 waveguides used in optical communication. The Zn-doped ITO films were deposited on quartz substrates using a combinatorial sputtering system, which yielded composition spread Zn-In-Sn-O (ZITO) films by co-sputtering two targets of ITO and ZnO. The Zn-doped ITO films deposited at room temperature exhibited an amorphous phase in the Zn content [Zn/(Zn+In+Sn)] range of 39-54 at%. The Zn-doped ITO films deposited at low oxygen partial pressure showed resistivity below 10(-3) ohms cm and optical transmittance of approximately 85% at 550 nm. The refractive index calculated by the Swanepoel method was found to be dependent on the Zn content in the Zn-doped ITO films. The calculated bending loss from the refractive index indicated that Zn-doped ITO could be utilized as a new waveguide material for various optical devices, such as optical splitters, wavelength division multiplexers (WDMs), optical modulators, and optical switches. 相似文献