Development of transparent heat mirrors based on metal oxide thin film structures

The aim of this work is the preparation of RF sputtered indium-tin oxide (ITO) thin films for application as transparent heat mirrors. The heat mirrors are important elements for the photothermal solar energy conversion. In combination with moderate spectral selectivity of the solar absorbers they could increase the efficiency of the solar collector. The optical properties of ITO and double-layer ITO with titanium dioxide (TiO₂) structures in the visible and infrared ranges were investigated. The films were deposited on glass substrates by RF sputtering technique. Tin-doped indium, as well as titanium targets was used. The influence of the In-Sn target composition and the deposition parameters on the film properties were studied. The films' surface morphology and structure were investigated by SEM, TEM and XRD, the composition was studied applying electron probe microanalyzer (EPMA). The thicknesses of the films were determined by the laser ellipsometry method. The measurements in the infrared range were performed on Fourier transform infrared spectrophotometer (FTIR). The single layer ITO structures showed reflectance in the infrared range not exceeding 50% at longer wavelengths. The double layer structures with TiO₂ under layer showed increased reflectance in the infrared range with high visible transmittance reaching 85%.     

磁控溅射制备ZrN_x薄膜离子导体性能研究

采用射频反应磁控溅射工艺,以纯Zr为靶材,在WO3/ITO/Glass基片上采用不同工艺参数沉积ZrNx薄膜,用紫外-可见分光光度计、循环伏安法、X射线衍射仪、扫描电镜等研究了ZrNx薄膜的离子导电性能。研究结果表明,所制备的ZrNx薄膜为非晶态,ZrNx/WO3/ITO/Glass复合膜的光学调节范围最大达57%以上,在离子传导过程中表现出良好的离子导电性能。     

退火对反应磁控溅射制备ITO薄膜性能影响

采用铟锡合金靶 (铟 锡 ,90 - 10 ) ,通过直流反应磁控溅射在玻璃基片上制备出ITO薄膜 ,并在大气环境下高温退火处理。研究了退火温度对薄膜结构、光学和电学性能的影响。研究表明 ,随着退火温度升高薄膜的电学特性得到很大提高     

直流磁控溅射功率对ITO薄膜光学性能的影响

本实验的ITO薄膜样品是利用直流磁控溅射技术在玻璃基片上沉积而成的。通过改变溅射功率,研究不同溅射功率对ITO薄膜光学性能的影响。经各实验测试后发现：在实验给定的功率区间内,ITO薄膜的厚度随着溅射功率的增加而增加,其可见光透过率则随之降低。     

直流反应磁控溅射法制备太阳电池用ITO透明导电膜

采用直流反应磁控溅射法制备了ITO透明导电薄膜,针对氧流量、溅射气压、溅射电流3种工艺参数对ITO薄膜电阻率和可见光区透射率的影响进行了分析和研究。结果表明:从ITO薄膜作为太阳电池用减反射层和电极出发,得到了工艺参数的优化值,分别为氧流量0.2 ml/min(标准状态),溅射气压3 Pa和溅射电流0.2 A,ITO薄膜的电阻率为3.7×10-3Ω.cm,透过率(550 nm)高达93.3%。另外,利用该优化工艺条件下制备的ITO薄膜作为电极和减反射层,制备了结构为ITO/n+-nc-Si∶H/-i nc-Si:H/p-c-Si/Ag的太阳能电池,电池开路电压Voc达到534.7mV,短路电流Isc达到49.24mA(3 cm2),填充因子为0.4228。     

Optimizing indium tin oxide thin films with bipolar d.c.-pulsed magnetron sputtering for electrochromic device applications

In this paper, indium tin oxide (ITO) films were prepared by bipolar d.c.-pulsed magnetron sputtering in a mixture of argon and oxygen onto unheated glass substrates. A target of ITO with 10 weight percent (wt %) tin was used. The influences of ratios of t^– _on/t⁺ _on (negative pulse-on time/positive pulse-on time) on the optical, electrical, and structural properties of ITO films have been investigated. The correlations between the deposition parameters and the film properties were discussed. An optimal condition based on reactive bipolar d.c.-pulsed sputtering for obtaining high transmittance, low resistivity, and low surface roughness of ITO films with high deposition rate is suggested. Then, ITO films grown at room temperature by bipolar d.c.-pulsed sputtering were used to form electrochromic devices of WO₃. Better electrochromic performances were found in comparison to those measured with commercially available ITO films on glass substrates.     

Effect of side groups in polynorbornene films for transparent conductive substrates

The imide-functionalized polynorbornene films exhibited excellent optical transparency in the visible range as well as high thermal stability over 200 degrees C. The indium tin oxide (ITO) thin films were coated on the imide-functionalized polynorbornene films at various deposition temperatures by employing radio-frequency (r.f.) planar magnetron sputtering system. The resulting ITO-coated imide-functionalized polynorbornene substrates showed good electrical and optical properties, while the figure of merit examination revealed that the present substrates are comparable to conventional ITO-glass substrates. This was confirmed from the preliminary result of organic light-emitting devices fabricated using the imide-functionalized polynorbornene substrates.     

Variations in microstructure and composition of indium tin oxide films with the deposition technique

Indium tin oxide (ITO) films have been deposited by reactive d.c.-sputtering and also by the reactive thermal evaporation technique onto glass substrates. The relationship between the microstructure and composition of the ITO films was found to strongly depend on the deposition technique. In addition the application of pure water vapour as the reactive sputtering atmosphere and its influence on the structural and compositional properties of the ITO films has been studied.X-ray diffraction investigations showed that all the films exhibited the bixbite structure of In₂O₃. No other crystalline phases were observed. Highly crystallized ITO films have been obtained using the reactive thermal evaporation technique. These films show a large average grain size of about 80 nm and a very homogeneous morphology. In contrast the d.c.-sputtered ITO films have a smaller average grain size and a characteristic texture. All deposited ITO films show an enlarged lattice constant compared to that of In₂O₃. A strong dependence of the chemical composition of the ITO films on the deposition technique and parameters was detected.     

ITO的热辐射性质与等离子波长关系的实验研究

热镜膜具有广泛的应用背景;特别是将其沉积在柔性的黑色底衬上,就能获得不同于通常的、必须用发射率很低的金属做衬底的太阳能选择性吸收表面．采用衬底不加温的普通ＲＦ溅射技术制备单层ＩＴＯ热镜膜,并对它们的热辐射性质与等离子波长之间的关系进行了实验研究．研究表明,对于单层ＩＴＯ热镜膜,同时具有最小的发射率和最小的对太阳辐射的反射率是困难的．但是,等离子波长可以作为预测太阳能热利用领域使用的单层ＩＴＯ热镜膜热辐射性质的一个判据．     

Effect of sputtering power and annealing temperature on the properties of indium tin oxide thin films prepared from radio frequency sputtering using powder target

Indium tin oxide (ITO) thin films were deposited on quartz substrates by radio frequency (RF) sputtering with different RF power (100–250 W) using the powder target at room temperature. The effect of sputtering power on their structural, electrical and optical properties was systematically investigated. The intensity of (400) orientation clearly increases with the sputtering power increases, although the films have (222) preferred orientation. Increasing sputtering power is benefit for lower resistivity and transmittance. The films were annealed at different temperature (500–800 °C), then we explored the relationship between their electro-optical and structural properties and temperature. It has been observed that the annealed films tend to have (400) orientation and then show the lower resistivity and transmittance. The ITO thin film prepared by RF sputtering using powder target at 700 °C annealing temperature and 200 W sputtering power has the resistivity of 2.08 × 10^?4 Ω cm and the transmittance of 83.2 %, which specializes for the transparent conductive layers.     

Effects of annealing on the magnetic properties and microstructure of Fe-ZrN nanocomposite films

We have studied the influence of thermal annealing on the magnetic properties and microstructure of 0.7-μm-thick Fe-ZrN nanocomposite films obtained by a reactive RF magnetron sputtering technique on non-conductive substrates. The near-surface and bulk magnetostatic characteristics of the films were studied using magnetooptical and vibrating-sample magnetometers, respectively. The microstructure was determined by X-ray diffraction. It was established that the magnetic characteristics strongly depend on the annealing temperature. These dependences are explained by structural changes induced in the films by the thermal treatment.     

空间防静电薄膜的制备及耐辐照性能研究

利用射频磁控溅射工艺制备了ITO防静电薄膜。研究了辐照试验前后ITO样品的光电性能变化,并用XPS和AFM对其组分及表面形貌变化进行了分析。结果表明,辐照后ITO薄膜的光学透过率变化不大;表面电阻有一定增加,但幅度不大,完全可以满足防静电的要求。     

偏压对ITO薄膜生长模式和光电性能的影响

为明确溅射偏压对ITO薄膜性质的影响,用射频磁控溅射法于室温在玻璃衬底制备出ITO透明导电薄膜,研究了不同偏压下ITO薄膜的生长模式、光学和电学性能.结果表明:随着偏压的增加,薄膜沉积模式经历了沉积、沉积和扩散、表面脱附3种方式;AFM和SEM显示,偏压为100 V时,膜层表面光洁、均匀,粗糙度最小,均方根粗糙度为1.61 nm;XRD分析表明偏压会影响与薄膜的择优取向,偏压为100 V时,薄膜晶粒取向为(222)面;薄膜偏压为120 V时,薄膜的光电性能最佳,电阻率最低为2.59×10-4Ω.cm,可见光区的平均透过率在85%以上;偏压的大小使薄膜的吸收边发生了"蓝移"或"红移".     

氧氩流量比对ZnO薄膜的微结构及其发光特性的影响

在室温下,利用射频磁控反应溅射法分别在硅片和石英玻璃上制备ZnO薄膜。通过控制O2/Ar流量比,研究O2/Ar流量比对ZnO薄膜的微结构、表面形貌及其光致发光特性的影响。X射线衍射仪和原子力显微镜结果显示,当O2/Ar流量比为3∶4时,所得薄膜结晶度最佳,表面粗糙度为0.725 nm;荧光光谱显示,ZnO薄膜在波长407 nm附近出现紫光发光峰,该发光峰源于氧空位浅施主能级到价带顶的电子跃迁,发射强度随O2/Ar流量比的增加先减小后增加。     

Properties of Reactive Magnetron Sputtered ITO Films without in-situ Substrate Heating and Post-deposition Annealing

1. Introductiontransparent conductive indium tin oxide (ITO)films have been extensively used in a variety of electronic and opto--electronic applications because oftheir high transmission in the visible range, high infrared (IR) reflection, and low electrical resistivity.A variety of deposition techniques have been appliedto fabricate ITO films such as CVD, spray pyrolysisand sputteringll'2]. However, sputtering is the mostextensively used technique especially in industry. Recelltly, targe…     

High thermal stability,electrical and optical properties of amorphous IGZO film by coating ultrathin amorphous ITO film as barrier layer

As one kind of well known amorphous transparent conductive oxide films, In–Ga–Zn–O (IGZO) based films were broadly used as electric functional layer in optoelectronic devices. As IGZO film is sensitive to temperature and oxygen, and its electrical and optical properties may probably be deteriorated after subsequent high temperature and air atmosphere. In this work, amorphous indium tin oxide (ITO) layer with two adjustable type of thickness were employed to improve the thermal stability of IGZO films. The doubled ITO/IGZO films were deposited on glass by magnetron sputtering and annealed at high temperatures subsequently to investigate its thermal stability. Accordingly, the crystal structure, optical and electrical properties of ITO/IGZO films were further studied. The XRD results demonstrated that the annealed IGZO films could keep amorphous structure, and the ITO/IGZO films were consisted of uniform small particles which showed comparable dense structure and closely integration with the glass substrate. Furthermore, the sheet resistance results indicated that the increased thickness of top ITO film could suppress oxygen and improve thermal stability of electrical property. Moreover, the transmittance in the visible range was about 85%, and showed a little increase after annealing. The protective ITO layer was found to keep improved thermal stability, good electrical and optical properties at temperatures up to 550 °C.     

以复合材料为基底的ITO薄膜红外隐身特性研究

利用直流磁控溅射法在树脂基复合材料基底上制备了ITO低红外发射率薄膜。选择了低发射率树脂作为基底复合材料的基体树脂。通过对材料表面进行表征、测试材料表面电阻率及红外发射率,研究了材料的红外隐身性能。结果表明,材料的红外发射率随ITO膜表面电阻率的增加先增加,后趋于一定值。     

环保型不溶性偶氮染料在防伪纸中的显色研究

采用非欧盟禁用不溶性偶氮染料制备一种新型的显色防伪纸。在纸浆中加入固体色酚颗粒,抄纸后在纸基表面上喷上一层色基的重氮盐溶液,干燥。制备出的纸张在滴加酒精后会显现出红色斑点。通过对色基红B、色酚AS-BO（偶合后显红色）用量的控制,以优化出不溶性偶氮染料在纸张上防伪显色的最佳工艺条件。对显色后的纸张进行白度、色差和物理性...     

氮化处理对ITO薄膜光电特性影响

利用射频磁控溅射在玻璃衬底上制备了氧化铟锡(ITO)薄膜,分别采用两种方法对薄膜进行氮化处理,即:(1)利用氩气溅射在室温下制备薄膜,随后在氮气和氨气气氛下对薄膜进行热处理;(2)利用氩气/氮气共溅射成膜.利用X射线衍射、霍尔效应、UV-vis-NIR分光光度计等测试手段对薄膜样品进行表征,对比研究了两种氮化处理方法对ITO薄膜光电特性的影响.结果发现对于低温生长的薄膜,两种方法均能明显提高其在可见光区的透过率.氩气/氮气共溅射的方法会降低薄膜的结晶程度,降低载流子浓度,但使得其紫外/可见/近红外光谱发生明显红移;而热处理方法则能增加薄膜的结晶程度,提高其导电能力.     

Effect of zinc content on the refractive index of Co-sputtered Zn-doped ITO films

In this study, we investigated the possibility of using Zn-doped ITO film as an alternative material for conventional SiO2 waveguides used in optical communication. The Zn-doped ITO films were deposited on quartz substrates using a combinatorial sputtering system, which yielded composition spread Zn-In-Sn-O (ZITO) films by co-sputtering two targets of ITO and ZnO. The Zn-doped ITO films deposited at room temperature exhibited an amorphous phase in the Zn content [Zn/(Zn+In+Sn)] range of 39-54 at%. The Zn-doped ITO films deposited at low oxygen partial pressure showed resistivity below 10(-3) ohms cm and optical transmittance of approximately 85% at 550 nm. The refractive index calculated by the Swanepoel method was found to be dependent on the Zn content in the Zn-doped ITO films. The calculated bending loss from the refractive index indicated that Zn-doped ITO could be utilized as a new waveguide material for various optical devices, such as optical splitters, wavelength division multiplexers (WDMs), optical modulators, and optical switches.