A4‐sized flexible ferroelectric liquid‐crystal displays with micro color filters

Abstract— We demonstrated an A4‐paper‐sized flexible ferroelectric liquid‐crystal (FLC) color displays fabricated by using a new plastic‐substrate‐based process which was developed for large‐sized devices. Finely patterned color filters and ITO electrodes were formed on a plastic substrate by a transfer method to avoid surface roughness and thermal distortion of the substrate, which induce disordering of the FLC molecular alignment. The thickness of an FLC/monomer solution sandwiched by two plastic‐film substrates was well controlled over a large area by using flexographic printing and lamination techniques. Molecular‐aligned polymer walls and fibers were formed in the FLC by a two‐step photopolymerization‐induced phase‐separation method using UV‐light irradiation. A fabricated A4‐sized flexible‐sheet display for color‐segment driving was able to exhibit color images even when it was bent.     

Processes,characterizations, and system applications of color‐filter liquid‐crystal‐on‐silicon microdisplays

Abstract— A color‐filter liquid‐crystal‐on‐silicon (CF‐LCOS) microdisplay that integrates color filters on silicon for color will be presented. The color‐filter process on silicon was optimized to achieve fine resolution and precise alignment of the color filters on the pixel array, good adhesion to the silicon suface, and a flat surface for the liquid‐crystal cell assembly. Important optical and electrical parameters of the color filters were extracted to establish an electro‐optical model of the CF‐LCOS microdisplays for device simulation. Thermal, chemical, and light‐stability characterizations were performed to ensure the stabilty of the color filters and CF‐LCOS microdisplays. With color CF‐LCOS microdisplays already available, the projection or viewing optics is greatly simplified. This CF‐LCOS microdisplay is ideal for near‐to‐eye displays because of its low‐power consumption and compactness. The CF‐LCOS microdisplay could also withstand medium light illumination for medium‐sized projectors. A single‐panel projector based on one CF‐LCOS microdisplay of 1280 × 768 × RGB resolution was demonstrated.     

World's first large size 77‐inch transparent flexible OLED display

Large flexible organic light‐emitting diode (OLED) display provides various electronic applications such as curved, bendable, rollable, and commercial display, because of its thinness, light weight, and design freedom. In this work, the process flow and key technologies to fabricate the world's first large size 77‐inch transparent flexible OLED display are introduced. “White OLED on TFT + color filter” method is used to fabricate the aforementioned display. On both thin‐film transistor and color filter substrates, transparent polyimide (PI) was used as plastic substrate with multi‐barrier. In case of a transparent flexible display, the multi‐barrier is required for the additional consideration to overcome the decrease of transmittance due to the difference in refractive index of the conventional multi‐barrier. We developed the special multi‐barrier to increase transparency with superior water vapor transition rate characteristic. The optimized amorphous indium gallium zinc oxide thin‐film transistors were employed on the multi‐barrier, and it shows the highly uniform electrical performance and reliability on plastic substrate. Also, the typical panel failure mechanism during laser lift‐off process caused by a particle in PI is studied, and a sacrificial layer was suggested between PI and a carrier glass to reduce the panel failure. Finally, we successfully realized the world's first 77‐inch transparent flexible OLED display with ultra‐high‐definition resolution, which can be rolled up to a radius of 80 mm with a transmittance of 40%.     

Retardation‐controlling color filter with two directly stacked retardation layers

Abstract— A polymerizable liquid crystal (PLC), the orientation of which can be frozen, is useful for making retardation layers. In this paper, a new color filter (CF) with retardation‐controlling layers made of PLC is reported. It has a positive A‐plate and a negative C‐plate, both directly stacked on a color‐filter layer. These two retardation layers exhibit good orientation ability, and function well as retarders, even when they are only 1/10 or less as thick as ordinary retardation films. The new CF also has excellent thermal stability. The change in retardation after heat treatment at 200°C for 30 min is around 5%, and there is no observable peeling. A prototype VA‐LCD made with our new CF provides good optical compensation, with the light leakage being extremely low in all azimuthal directions. This technology is very useful for making thin, highly reliable color filters for LCDs, even with other modes.     

Amorphous‐silicon thin‐film transistors made at 280°C on clear‐plastic substrates by interfacial stress engineering

Abstract— A process temperature of ～300°C produces amorphous‐silicon (a‐Si) thin‐film transistors (TFTs) with the best performance and long‐term stability. Clear organic polymers (plastics) are the most versatile substrate materials for flexible displays. However, clear plastics with a glass‐transition temperature (T_g) in excess of 300°C can have coefficients of thermal expansion (CTE) much larger than that of the silicon nitride (SiN^x) and a‐Si in TFTs deposited by plasma‐enhanced chemical vapor deposition (PECVD). The difference in the CTE that may lead to cracking of the device films can limit the process temperature to well below that of the T_g of the plastic. A model of the mechanical interaction of the TFT stack and the plastic substrate, which provides design guidelines for avoid cracking during TFT fabrication, is presented. The fracture point is determined by a critical interfacial stress. The model was used to successfully fabricate a‐Si TFTs on novel clear‐plastic substrates with a maximum process temperature of up to 280°C. The TFTs made at high temperatures have higher mobility, lower leakage current, and higher stability than TFTs made on conventional low‐T_g clear‐plastic substrates.     

Digital lithographic processing for large‐area electronics

Abstract— A non‐contact jet‐printed mask‐patterning process is described. By combining digital imaging with jet printing, digital lithography was used to pattern a‐Si:H‐based electronics on glass and plastic substrates in place of conventional photolithography. This digital lithographic process is capable of layer‐to‐layer registration of ±5 μm using electronic mask files that are directly jet printed onto a surface. Aminimum feature size of 50 μm was used to create 180 × 180 element backplanes having 75‐dpi resolution for display and image‐sensor applications. By using a secondary mask process, the minimum feature size can be reduced down to ～15 μm for fabrication of short‐channel thin‐film transistors. The same process was also used to pattern black‐matrix wells in fabricating color‐filter top plates in LCD panels.     

2‐DOF discrete‐time nonlinear ℋ︁∞‐filters

In this paper, a new theory of two‐degrees‐of‐freedom (2‐DOF)‐??_∞ and certainty‐equivalent filters is presented. Exact and approximate solutions to the nonlinear ??_∞ filtering problem using this class of filters are derived in terms of discrete‐time Hamilton–Jacobi–Isaacs equations. The expressions for the filter gains are determined as functions of the filter state and the system's output in contrast to earlier results. Hence, it is shown that coupled with the additional degree‐of‐freedom, these filters are a substantial improvement over the earlier 1‐DOF case. The theory presented is also generalized to n‐DOF filters, which bore strong connections to linear infinite‐impulse response filters and hence are generalizations of this class of filters to the nonlinear setting. Simulation results are also given to show the usefulness of the new approach. Copyright © 2009 John Wiley & Sons, Ltd.     

Continuous‐discrete filters for bearings‐only underwater target tracking problems

In this work, we develop a continuous‐discrete shifted Rayleigh filter (CD‐SRF) and a continuous‐discrete sparse‐grid Gauss‐Hermite filter (CD‐SGHF) for a real‐life passive underwater bearings‐only target tracking problem. The stochastic difference equation describing the process model is derived from its continuous equivalent using Ito‐Taylor expansion of order 1.5. The performance of the proposed filters is compared in terms of root mean square error (RMSE), track divergence and computational time. For a fair comparison, popular filters like the unscented Kalman filter (UKF), cubature Kalman filter (CKF) and Gauss–Hermite filter (GHF) are implemented. The effect of initial uncertainty, measurement noise covariance and sampling time on filtering accuracy is also studied. Finally, RMSEs of all the filters are evaluated in comparison with the Cramer–Rao lower bound (CRLB). From simulation results, it was observed that CD filters performed with higher accuracy than their discrete equivalents, with CD‐SRF proving to be the most accurate among all the filters.     

Fabrication of flexible organic light‐emitting‐diode display with a flexible color filter driven by In—Ga—Zn—Oxide TFTs

Abstract— A novel flexible active‐matrix organic light‐emitting‐diode (OLED) display fabricated on planarized stainless—used‐steel substrates with a resolution of 85 dpi in a 4.7‐in. active area has been demonstrated. Amorphous indium—gallium—zinc—oxide thin‐film transistors were used as the backplane for the OLED display with high device performance, high electrical stability, and long lifetime. A full‐color moving image at a frame frequency of 60 Hz was also realized by using a flexible color filter directly patterned on a plastic substrate with a white OLED as the light source.     

Simulation and design of MIM nanoresonators for color filter applications

We simulated metal–insulator–metal (MIM) nanoresonator structures that can be realized by sandwiching an insulator layer between two metal grating layers with subwavelength periods and heights. Simulation results indicate that it is possible to use relatively low refractive index polymeric materials as the insulator layer and such MIM structures can function as color filters with reasonably narrow bandwidths in transmission mode. Such color filters being superior in performance might find application in liquid crystal display devices replacing the conventional color filters. Simulations suggest that development of plasmonic modes at the metal–insulator interfaces might be responsible for the filter‐like transmission behavior of such structures. The transmission peaks can be tuned by changing the heights of the two grating layers and the refractive index of the insulator layer. Transmission peak is red‐shifted as insulator layer refractive index increases. Simulations were carried out using a home‐grown, monochromatic version of recursive convolution finite‐difference time‐domain method.     

Room‐temperature deposition of thin‐film indium tin oxide on micro‐fabricated color filters and its application to flat‐panel displays

Abstract— Direct deposition of indium tin oxide (ITO) thin film on color filters is of practical use in the fabrication of state‐of‐the‐art flat‐panel displays. Room‐temperature dc magnetron sputtering of thin‐film ITO and issues related to the integration of ITO‐on‐glass panels containing micro‐fabricated color filters and other functional materials have been investigated. The resulting polycrystalline ITO exhibited good adhesion to the underlying color filters, as well as good optical transparency and high electrical conductivity. Application of this ITO deposition technology to color liquid‐crystal and organic light‐emitting diode displays will also presented.     

Development of rollable silicon thin‐film‐transistor backplanes utilizing a roll‐to‐roll continuous lamination process

Abstract— Rollable silicon thin‐film‐transistor (TFT) backplanes utilizing a roll‐to‐roll process have been developed. The roll‐to‐roll TFT‐backplane technology is characterized by a glass‐etching TFT transfer process and a roll‐to‐roll continuous lamination process. The transfer process includes high‐rate, uniform glass‐etching to transfer TFT arrays fabricated on a glass substrate to a flexible plastic film. In the roll‐to‐roll process, thinned TFT‐glass sheets (0.1 mm) and a base‐film roll are continuously laminated using a permanent adhesive. Choosing both an appropriate elastic modulus for the adhesive and an appropriate tension strength to be used in the process is the key to suppressing deformation of the TFT‐backplane rolls caused by thermal stress. TFT backplanes that can be wound, without any major physical damage such as cracking, on a roll whose core diameter is approximately 300 mm have been sucessfully obtained. Incorporating the TFT‐backplane rolls into other roll components, such as color‐filter rolls, will make it possible to produce TFT‐LCDs in a fully roll‐to‐roll manufacturing process.     

Flexible AMOLEDs with low‐temperature‐processed TFT backplane technologies

Developments of backplane technologies, which are one of the challenging topics, toward the realization of flexible active matrix organic light‐emitting diodes (AMOLEDs) are discussed in this paper. Plastic substrates including polyimide are considered as a good candidate for substrates of flexible AMOLEDs. The fabrication process flows based on plastic substrates are explained. Limited by the temperature that plastic substrates can sustain, TFT technologies with maximum processing temperature below 400 °C must be developed. Considering the stringent requirements of AMOLEDs, both oxide thin‐film transistors (TFTs) and ultra‐low‐temperature poly‐silicon TFTs (U‐LTPS TFTs) are investigated. First, oxide TFTs with representative indium gallium zinc oxide channel layer are fabricated on polyimide substrates. The threshold voltage shifts under bias stress and under bending test are small. Thus, a 4.0‐in. flexible AMOLED is demonstrated with indium gallium zinc oxide TFTs, showing good panel performance and flexibility. Further, the oxide TFTs based on indium tin zinc oxide channel layer with high mobility and good stability are discussed. The mobility can be higher than 20 cm²/Vs, and threshold voltage shifts under both voltage stress and current stress are almost negligible, proving the potential of oxide TFT technology. On the other hand, the U‐LTPS TFTs are also developed. It is confirmed that dehydrogenation and dopant activation can be effectively performed at a temperature within 400 °C. The performance of U‐LTPS TFTs on polyimide is compatible to those of TFTs on glass. Also, the performance of devices on polyimide can be kept intact after devices de‐bonded from glass carrier. Finally, a 4.3‐in. flexible AMOLED is also demonstrated with U‐LTPS TFTs.     

Solution‐processed oxide semiconductors for low‐cost and high‐performance thin‐film transistors and fabrication of organic light‐emitting‐diode displays

Abstract— High‐performance solution‐processed oxide‐semiconductor (OS) thin‐film transistors (TFTs) and their application to a TFT backplane for active‐matrix organic light‐emitting‐diode (AMOLED) displays are reported. For this work, bottom‐gated TFTs having spin‐coated amorphous In‐Zn‐O (IZO) active layers formed at 450°C have been fabricated. A mobility (μ) as high as 5.0 cm²/V‐sec, ?0.5 V of threshold voltage (VT), 0.7 V/dec of subthreshold swing (SS), and 6.9 × 10⁸ of on‐off current ratio were obtained by using an etch‐stopper (ES) structure TFT. TFTs exhibited uniform characteristics within 150 × 150‐mm² substrates. Based on these results, a 2.2‐in. AMOLED display driven by spin‐coated IZO TFTs have also been fabricated. In order to investigate operation instability, a negative‐bias‐temperature‐stress (NBTS) test was carried out at 60°C in ambient air. The IZO‐TFT showed ?2.5 V of threshold‐voltage shift (ΔVT) after 10,800 sec of stress time, comparable with the level (ΔVT = ?1.96 V) of conventional vacuum‐deposited a‐Si TFTs. Also, other issues regarding solution‐processed OS technology, including the instability, lowering process temperature, and printable devices are discussed.     

A field‐sequential‐color display with a local‐primary‐desaturation backlight scheme

Abstract— Field‐sequential‐color technology eliminates the need for color filters in liquid‐crystal displays (LCDs) and results in significant power savings and higher resolution. But the LCD suffers from color breakup, which degrades image quality and limits practical applications. By controlling the backlight temporally and spatially, a so‐called local‐primary‐desaturation (LPD) backlight scheme was developed and implemented in a 180‐Hz optically compensated bend (OCB) mode LCD equipped with a backlight consisting of a matrix of light‐emitting diodes (LEDs). It restores image quality by suppressing color breakup and saves power because it has no color filter and uses local dimming. A perceptual experiment was implemented for verification, and the results showed that a field‐sequential‐color display with a local‐primary‐desaturation backlight reduced the color breakup from very annoying to not annoying and even invisible.     

Liquid‐crystal photoaligning by azo dyes (Invited Paper)

Abstract— Liquid‐crystal (LC) photoalignment using azo dyes is described. It will be shown that this photoaligning method can provide a highly uniform alignment with a controllable pretilt angle and strong anchoring energy of the LC cell, as well as a high thermal and UV stability. The application of LC photoalignment to the fabrication of various types of liquid‐crystal displays, such as VAN‐LCDs, FLCDs, TN‐LCDs, and microdisplays, on glass and plastic substrates is also discussed. Azo‐dye photoaligned super‐thin polarizers and phase retarders are considered as new optical elements in LCD production, in particular for transflective displays.     

Electron‐beam deposition of MgO on plastic substrate and manufacturing flexible flat fluorescent lamp

Abstract— A flexible fluorescent lamp that utilizes the same plasma discharge mode as in PDPs has been manufactured. The structure of the flexible lamp is simple and easy to manufacture. All‐plastic materials including plastic substrates, barrier ribs (spacers), and sealants for low‐temperature manufacturing processing have been adopted except for the phosphor and MgO thin film. The MgO thin films were coated on the plastic substrates as a protection layer against the plasma discharge. The adhesion and biaxial texture of MgO thin film deposited on the plastic substrates, poly‐ethyle‐nenaphthalate (PEN) and polycarbonate (PC), at low temperature (100–180°C) has been characterized. The MgO film on PEN shows good adhesion under a repeated bending test. The manufactured flexible lamp consists of two plastic substrates of about 3 in. on the diagonal, barrier rib (spacer), and external ITO electrodes. The Ne‐Xe (5%) gas mixture at 100–200 Torr was used for the discharge gas. A maximum surface luminance of about 100 cd/m² was achieved for a 1 ‐kHz AC pulse.     

Direct‐coupled waveguide filters for the lower gigahertz frequency range

An analysis method based on the coupled‐integral‐equations technique (CIET) and the mode‐matching technique (MMT) is presented for the design of a variety of direct‐coupled waveguide filters suitable for applications in the lower gigahertz frequency range. The method is verified by comparison with data obtained through other numerical techniques and measurements. With reference to standard waveguide filters, the issues of filter miniaturization and stopband extension toward higher frequency bands are investigated. For given frequency specifications in the 2‐GHz frequency range, examples of rectangular coaxial waveguide filters, ridge waveguide filters, ridge waveguide filters including coupling irises and T‐septum waveguide filters are presented. It is demonstrated that the rectangular/square coaxial waveguide filter achieves the highest degree of miniaturization, but that ridge and, especially, T‐septum waveguide filter technology is advantageous with respect to stopband performance toward higher frequencies. In particular, a T‐septum filter centered at 2.155 GHz is shown to block the entire frequency range up to 7.5 GHz. © 2002 Wiley Periodicals, Inc. Int J RF and Microwave CAE 12: 217–225, 2002.     

Suspension‐deposited carbon‐nanotube networks for flexible active‐matrix displays

Abstract— The unique properties of carbon nanotubes (CNTs) promise innovative solutions for a variety of display applications. The CNTs can be deposited from suspension. These simple and low‐cost techniques will replace time‐consuming and costly vacuum processes and can be applied to large‐area glass and flexible substrates. Single‐walled carbon nanotubes (SWNTs) have been used as conducting and transparent layers, replacing the brittle ITO, and as the semiconducting layer in thin‐film transistors (TFTs). There is no need for alignment because a CNT network is used instead of single CNTs. Both processes can be applied to glass and to flexible plastic substrates. The transparent and conductive nanotube layers can be produced with a sheet resistance of 400 Ω/□ at 80% transmittance. Such layers have been used to produce directly addressed liquid‐crystal displays and organic light‐emitting diodes (OLED). The CNT‐TFTs reach on/off ratios of more than 10⁵ and effective charge‐carrier mobilities of 1 cm²/V‐sec and above.     

A covering Ka‐band two‐way switch filter module using a three‐line and an E‐plane waveguide band‐pass filters

A millimeter‐wave ultrawideband two‐way switch filter module is presented in this article. The switch filter module covers whole Ka‐band (26–40 GHz), and is composed of two wideband band‐pass filters and two monolithic microwave integrated circuit (MMIC) single pole two throw (SP2T) switches. One filter is realized using E‐plane iris waveguide band‐pass filter, and another is realized by a novel 11‐pole three‐line microstrip structure band‐pass filter. Compared with the traditional three‐line filter, the proposed three‐line filter not only retains virtues of the traditional three‐line filter, but also resolves drawbacks of it, which include discontinuities between adjacent sections, many parameters of design, and no effective matching circuits at input/output ports. The developed switch filter module is fabricated using hybrid integrated technology, which has a size of 51 × 26 × 9.8 mm³, and interconnections between MMICs and microstrip are established by bond wires. The fabricated switch filter module exhibits excellent performances: for two different states, the measured insertion loss and return loss are all better than 7 and 10 dB in each pass‐band, respectively. © 2014 Wiley Periodicals, Inc. Int J RF and Microwave CAE 25:305–310, 2015.