共查询到18条相似文献,搜索用时 187 毫秒
1.
介绍了近年来对掺硼晶硅(Cz-Si和mc-Si)太阳电池的光照衰减问题及衰减机制的研究结果。通过光照及退火处理前后少子寿命变化的研究以及光衰减与硼和氧浓度关系的研究.表明引起掺硼晶硅太阳电池光照衰减的主要因素是硼和间隙氧的存在。同时介绍了减小或避免衰减的技术措施。 相似文献
2.
3.
n型晶体硅具有体少子寿命长、无光致衰减等优点,非常适合制作高效低成本太阳电池.结合PC1D模拟,对n型晶体硅太阳电池的最新研究成果进行了分析,指出n型晶体硅太阳电池要实现产业化必须先解决p型硅表面钝化、硼扩散和硼发射极金属化等问题.最后预测了n型晶体硅太阳电池的产业化前景. 相似文献
4.
太阳电池缺陷EL检测及电性能分析 总被引:1,自引:0,他引:1
基于电致发光(EL)的理论,利用红外检测的方法,通过CCD近红外相机实验检测出晶体硅太阳电池中存在的隐性缺陷,如隐裂、断栅、电阻不均匀、花片等,并将EL图像与可见光下电池图像进行了对比。对存在缺陷的太阳电池进行了伏安特性测试,得出隐裂缺陷对太阳电池伏安特性、填充因子、效率等性能的影响,也证明电致发光技术检测太阳电池缺陷的准确性。 相似文献
5.
6.
7.
8.
随着晶体硅太阳电池技术的不断发展,硅片的厚度不断降低,电池表面钝化对提高太阳能电池转化效率变得尤为重要。本文介绍了表面钝化膜在晶体硅太阳电池中的应用,以及几种晶体硅电池表面钝化方法,包括等离子体增强化学气相沉积法、氢化非晶硅、热氧化法、原子层沉积法以及叠层钝化,并分别介绍了它们在应用上的优缺点。分析了制备钝化膜过程中存在的问题,并提出了相应措施及发展趋势。表面钝化技术是提高晶体硅电池转换效率最有效的手段之一,今后晶体硅电池表面钝化技术仍将是国内和国际研究的热点之一。 相似文献
9.
《材料导报》2020,(Z1)
在P型晶体硅太阳电池转换效率提升接近极限的情况下,N型晶体硅太阳电池因少子寿命长、光致衰减小、对金属污染的容忍度高等优点,在光伏行业内掀起了研究和产业化的新浪潮。目前研究较多并实现规模化生产的N型电池主要有钝化效果较好、开路电压高的异质结电池(HJT电池)和受光面积大、短路电流高的背接触电池(IBC电池)。而HIBC电池则是将HJT电池和IBC电池的结构优点有机结合的叠加电池,其具有转化效率高、光稳定性好、工艺温度低和可薄片化等特点。HIBC电池目前尚在研发阶段,仍需攻克核心工艺技术;且其生产成本较高,目前产业化应用较少。但其作为新型N型太阳电池,是未来光伏行业高效电池发展的方向和趋势。 相似文献
10.
11.
Microcrystalline silicon solar cells deposited by VHF-PECVD with or without HWCVD grown p/i interface buffer layer were investigated. We studied long-term stability under storage in ambient atmosphere and performed light soaking experiments. Cells with i-layers covering a wide range of crystalline volume fractions were studied. All cells were stable or degraded slightly after storage for 2 years in air, regardless of crystalline volume fraction or presence of p/i buffer interface. Upon light soaking all cells show efficiency degradation to more or less extent depending on crystal volume fraction of the i-layer and the presence of the buffer layer: the solar cell with high crystal volume fraction are nearly stable, cells with high amorphous volume fraction degrade by up to 20%. The solar cell with HWCVD buffer layer shows better stability in the high efficiency range of relative efficiency degradation typically less than 10% after 1000 h AM 1.5 light soaking. The efficiency degradation is mainly caused by Voc and FF deterioration while Jsc is almost stable. 相似文献
12.
13.
微合金化在晶体硅太阳电池中应用的研究进展 总被引:1,自引:1,他引:0
在硅晶体中利用微合金化来获取性能优良的晶硅电池是其未来发展的重要方向。微合金化过程中,在硅中加入其它元素,带来硅晶体晶格畸变而易捕获空位,增加氧沉淀浓度、减少间隙氧含量,能抑制B-O复合体形成,从而改善硅晶体机械强度、提高少子寿命以及提高晶硅电池光电转化效率、抑制光致衰减效应。重点分析了Si-Ge、Si-Ga、Si-Sn、Si-Al和Si-In微合金化在晶体硅太阳能电池中的应用,通过微合金化能够满足人们对高质量晶硅电池的要求。掌握微合金化对晶硅电池性能影响的机理,并将其运用于实际生产中是目前急需解决的问题。 相似文献
14.
The rising conventional energy prices have opened up the market for photovoltaic, but the lack of polycrystalline silicon
from the chemical route restricts the growth of crystalline silicon solar cells. Recently there is a trend that produces solar
cells by using the newly developed solar grade silicon feedstock from a metallurgical process route. In this article, the
chemical components of solar grade silicon feedstock are analyzed. The single crystalline silicon solar cells from 100% solar
grade silicon feedstock from a metallurgical process route are investigated. The outdoor performance of solar modules encapsulated
by such cells is reported. The experimental evidence suggests that such solar cells can achieve the average efficiency higher
than 14% on single crystalline silicon wafers. However, the efficiency degradation of solar cells under natural sunlight is
significant, and the electrical uniformity of small cells diced from the whole cell is too bad. The metal impurities, oxygen,
carbon, and their complexes influence the performance stabilization. The article proves that the module made by such cells
has a big cell mismatch loss than normal cells made by electronic grade silicon, even if these cells come from the same sort.
And the operating temperature of the cells of the modules is 15–22 °C higher than normal modules under the same conditions.
The solar grade silicon feedstock from a metallurgical process route has to be improved farther in order to be used in photovoltaic
industry. 相似文献
15.
在过去20年中,光伏市场以惊人的速度增长,光伏发电逐步成为世界能源发电的主要来源之一。2016年全球新增装机量超过75GW,较2015年增长34%,其中,又以晶体硅太阳能电池为主,占整个光伏市场的90%以上,而多晶硅又占据了整个晶体硅太阳能电池的70%以上。相比于直拉单晶硅,定向凝固铸造法生产的晶体硅材料具有更好的性价比,但含有较多的杂质、位错等晶体缺陷。更高品质、更低成本的太阳能电池始终是业界追寻的目标。本文以传统铸造法生长多晶硅技术为基础,介绍了目前几种主流的晶体硅铸造工艺方法,包括全熔工艺制备多晶硅锭,半熔工艺生长高效多晶硅锭,以及铸造法制备大尺寸单晶硅锭。另外,本文还从硅锭外观和性能等方面阐述了铸造法晶体硅的发展方向。文中数据部分为笔者进行的实验论证,部分为其他文献的研究成果,希望能为现阶段太阳能晶体硅的生产和研究工作提供参考。 相似文献
16.
17.
晶体硅薄膜电池制备技术及研究现状 总被引:2,自引:0,他引:2
晶体硅薄膜太阳电池近些年来得到广泛的研究和初步的商业化探索。根据所采用的晶体硅薄膜沉积工艺中温度范围的不同,晶体硅薄膜电池研究可分为高温路线和低温路线两个不同发展方向。本文分别从这两个方向综述了目前国外晶体硅薄膜电池制备技术的最新进展,最新实验室研究结果。报导了晶体硅薄膜电池商业化进展状况,指出了晶体硅薄膜电池实现产业化必须解决的问题。 相似文献
18.
Gourab Das Sourav Mandal Sukanta Dhar Sukanta Bose Sumita Mukhopadhyay Chandan Banerjee A. K. Barua 《Journal of Materials Science: Materials in Electronics》2017,28(8):5746-5753
Light trapping is one of the fundamental necessities of thin film based solar cell for its performance elevation. Back reflection of unused light of first pass is the key way to improve the light trapping phenomena. In this study we have reported the development of n-type hydrogenated microcrystalline silicon oxide (n-µc-SiO:H) layers of different characteristics. The deposition has been done by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. The detailed characterization of the films include the following: (1) electrical properties (2) optical properties like E04 (3) structural studies which include crystalline fraction by Raman spectroscopy and grain size by X-ray diffraction measurement, FTIR spectroscopy, AFM and TEM studies. n-µc-SiO:H layer has been introduced as the n-layer of single junction p–i–n structure µc-Si solar cells. By various techniques the optimum use of n-µc-SiO:H layer for enhancing the performance of µc-Si:H solar cells has been done. It has been found that by using suitable bilayer of two different n-µc-SiO:H layers, it is possible to increase the solar cell performances. The maximum efficiency obtained without any back reflector is 8.44% that is about 8.9% higher than that obtained by using n-µc-Si:H layer as n-layer in the solar cells. 相似文献