含氢硅油对高比表面积碳化硅孔结构的影响

以糠醇为碳源,正硅酸乙酯为硅源,含氢硅油(PMHS)为结构助剂制备碳化硅前驱体,通过溶胶-凝胶法和碳热还原法制备出高比表面积多孔碳化硅,采用XRD、FTIR、SEM、HRTEM和BET对所制备的样品进行表征。结果表明,所得碳化硅具有高的比表面积130m2/g;含氢硅油的特殊结构有利于形成多孔碳化硅,且对碳化硅样品的比表面积、孔容起着至关重要的影响。     

结构助剂对高比表面碳化硅结构的影响

以糠醇为碳源,正硅酸乙酯为硅源,硝酸钴为催化剂,含氢硅油为结构助剂,通过溶胶凝胶和碳热还原的方法制备出高比表面积多孔碳化硅,采用XRD、SEM、TEM、HRTEM和低温氮吸附-脱附对所制备的样品进行表征.结果表明,添加了结构助剂得到的碳化硅的比表面积可达125-167m2· g-1,其用量对碳化硅的比表面积和孔容有重要...     

三维基底表面碳基透明电极的研究现状及展望

三维基底表面上制备的透明电极具备散射高、比表面积大的性能优势,基于此,一方面可以提升太阳能电池的光电转化效率,另一方面比表面积大可以提升透明电容器的电荷储量。当前,已经进行的研究主要是以银纳米线为主的金属纳米线透明电极技术,然而金属纳米线一方面成本高、另一方面金属本身的特性与半导体材料配合使用时有一定的局限性。相比而言,碳基材料(主要为碳纳米管、石墨烯)的成本低,同时碳与当前的主要半导体材料硅为同一主族元素,因此相比于金属材料更有利于和半导体材料结合。基于上述内容,碳基材料制备到三维基底表面上具有更深远的研究意义。     

以淀粉为碳源碳热还原法合成多孔高比表面积β-SiC

以淀粉为碳源,正硅酸乙酯(TEOS)为硅源,通过溶胶-凝胶法制备了碳化硅前驱体淀粉-SiO_2凝胶,将干凝胶在氩气氛中进行碳热还原制备碳化硅(SiC).用XRD、IR、SEM、TEM及N_2低温物理吸附等手段对合成的样品进行表征.结果表明,在淀粉-SiO2凝胶中添加镍催化剂在1450℃下就能合成出尺寸大小为40～60nm多孔高比表面积的纳米SiC,其孔径主要集中在4.2和10.6nm,比表面积为127.5m~2/g,孔体积为0.43cm~3/g.     

溶胶-凝胶和碳热还原法制备高比表面积碳化硅

采用糠醇、正硅酸乙酯作为碳源、硅源,在溶胶-凝胶过程中加入硝酸钴为催化剂,含氢硅油为结构助剂,通过碳热还原的方法制备出高比表面积碳化硅。采用XRD、FT-IR、SEM、HRTEM及低温氮吸附-脱附对所制备的样品进行表征。结果表明,所得碳化硅具有高的比表面积131 m2/g;含氢硅油的特殊结构是形成多孔碳化硅的主要原因;所得碳化硅具有特殊的光致发光性能。     

煤质碳化硅纳米颗粒的合成与表征

以廉价的煤和Na2SiO3.9H2O为原料,辅以Fe(NO3)3.9H2O为助剂,在1300℃氩气气氛下通过碳热还原反应制备出碳化硅纳米颗粒。采用X射线分析衍射仪(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、荧光光谱仪(PL)和低温氮吸附-脱附对所制备的碳化硅样品进行了表征。结果表明,制得的β-SiC纳米颗粒尺寸介于20～60nm,当n(Fe)/n(Si)=0.01时,碳化硅颗粒比表面积最高,为32m2/g。     

化学气相反应制备碳化硅纳米线

用硅粉、二氧化硅和石墨粉作原料，在无催化剂的条件下，在1400℃下用高温化学气相反应法制备了碳化硅纳米线，并用高分辨扫描电镜观察了所得碳化硅纳米线的形貌。所得碳化硅纳米线直径为100-500nm，长度可达几百微米。还提出了描述碳化硅纳米线的生长机理。     

SiCNW-Cf/LAS复合材料的制备和电磁波吸收性能EI北大核心CSCD

采用热蒸发法,以乙炔黑为碳源,在碳纤维(Cf)布上制备不同摩尔硅碳比的SiC纳米线(SiCNW)。通过浆料浸渍及真空烧结工艺,以不同摩尔硅碳比下制备的SiCNW-Cf作为中间夹层制备SiCNW-Cf/LAS(Li2O-Al2O3-SiO2)复合材料。结果表明:随着摩尔硅碳比的减小,SiCNW的直径不断减小,产量先增加后减小,并在摩尔硅碳比为1∶3时达到最高。摩尔硅碳比为1∶1时,所制备的SiCNW-Cf/LAS具有对电磁波的最低反射损耗-40.9dB(7GHz,3mm)。摩尔硅碳比为1∶3时,所制备的SiCNW-Cf/LAS具有吸收电磁波的最大有效带宽4.61GHz(Ku波段,1.5mm)。SiCNW-Cf/LAS复合材料优异的吸波性能归因于其对电磁波较高的介电损耗、散射损耗以及LAS对材料与空间阻抗匹配的调整。     

新型双孔碳化硅的合成与表征

以正硅酸乙酯(TEOS)与蔗糖为原料,采用溶胶-凝胶法制备碳硅干凝胶,利用过量的碳源作为造孔剂,在氩气气氛1500℃下进行碳热还原反应合成出新型双孔的SiC.用XRD、SEM、TEM和低温N2吸附-脱附等手段对合成的样品进行表征,结果表明:合成的样品为"刺球"状双孔的新型碳化硅,这种两种孔分别是"刺"碳化硅晶体上的孔(孔半径约为2～6nm)和"刺"与"刺"之间的隙间孔(孔半径约为6～40nm).其比表面积为113m2/g,孔体积为0.38m3/g.     

碳化硅纳米材料制备方法研究进展

碳化硅纳米材料具有热传导率高、热膨胀系数低、机械性能好、热性能和化学稳定性好等特性,并具有耐腐蚀性和抗氧化性,在汽车、化工、石油钻探、雷达、高温的辐射等环境中应用广泛。综述了几种目前常用的制备碳化硅纳米线和碳化硅纳米粉体的方法,包括电弧放电法、热解有机前躯体法、碳热还原法、溶剂热方法、气相渗硅法、溶胶-凝胶法、热化学气相反应法、碳热还原法、等离子体法等,并对微波加热法制备碳化硅纳米粉体进行了论述。     

Tuning the morphologies of SiC nanowires via the control of growth temperature, and their photoluminescence properties

Single crystalline SiC nanowires were synthesized by a catalyst free vapor deposition method using elemental silicon and graphite carbon as the starting materials. The phase, morphology, crystal structure, and defects of the products were characterized by x-ray diffraction, field emission scanning electron microscopy, and transmission electron microscopy. Within a 6?h reaction time, the morphology of the SiC nanowires can be tuned to cylinder, hexagonal prism, or bamboo shape by simply altering the reaction temperature from 1470?°C, 1550?°C to 1630?°C, respectively. The photoluminescence of these differently shaped SiC nanowires was measured and is discussed. Based on the characterization results, the vapor-solid growth mechanisms for the multi-shaped SiC nanowires are proposed by taking into account the possible reactions between intermediate gas phases, the reaction steps, and the surface energy minimization.     

Synthesis of the tube-brush-shaped SiC nanowire array on carbon fiber and its photoluminescence properties

Tube-brush-shaped nanostructure of SiC nanowires was synthesized on polyacrylonitrile-based carbon fibers. The morphology and microstructure of the nanowires were characterized by X-ray powder diffraction, field emission scanning electron microscopy and high-resolution transmission electron microscopy. A quasi-periodically twin structure with (111) plane as the boundary along the SiC nanowires was observed. The vapor-solid growth mechanism of the SiC nanowire brush is also discussed. Moreover, some separated blue-shifted photoluminescence peaks around 469 nm were measured. The separated blue-shifted emission peaks are attributed to the quantum confinement of nanoscaled twin segments along each nanowire rather than the apparent diameters of the nanowires. The SiC nanowire brushes hopefully can find potential applications in nanotechnology.     

SiC Nanowires Toughed HfC Ablative Coating for C/C Composites

In order to improve ablation resistance of carbon/carbon(C/C) composites,SiC nanowires were prepared on C/C composites surface in prior through chemical vapor reaction before HfC coating.SiC nanowires grew randomly and had good combination with HfC coating.SiC nanowires toughed HfC coating had lower linear and mass ablation rates than original HfC coating.The surface was much flatter and exhibited smaller cracks in center region.The ablation mechanism of HfC coating has been changed by SiC nanowires.Thicker HfO2 fused layer was formed on the surface of the toughed HfC coating,which could provide efficient protection for C/C composites.Therefore,SiC nanowires toughed HfC coating behaved in better ablation resistance.     

Preparation and characterization of SiC nanowires and nanoparticles from filter paper by sol–gel and carbothermal reduction processing

The carbothermal reduction of SiO₂ gel containing filter paper (as carbon precursors) in argon was used to prepare SiC nanowires and nanoparticles. The resulting SiC ceramic, as well as the conversion mechanism of carbon/silica composites to SiC nanowires and nanoparticles, have been investigated by scanning electron microscopy (SEM), Transmission electron microscopy (TEM), x-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and thermogravimetric analysis (TG) techniques. XRD and IR studies show that the materials, obtained from reaction at 1550 °C for 1 h in static argon atmosphere, are β-SiC. SEM and TEM reveal that SiC nanowires is single crystal wires with diameters ranging from 50–200 nm and their lengths over several tens of microns. According to thermodynamic analysis, SiC nanowires and SiC nanoparticles in the resulting SiC ceramic are formed by gas-gas reaction of SiO (g) and CO (g).     

核壳结构SiC/SiO2纳米线的低温合成与表征

以酚醛树脂(PF)作为碳源, 纳米SiO₂为硅源, 在1300℃氩气气氛下通过碳热还原反应, 制备出具有核壳结构的SiC/SiO₂纳米线。采用X射线分析衍射仪(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、高分辨率透射电子显微镜(HRTEM)、拉曼光谱(Raman)对产物的组成、形貌、微观结构等进行了表征。结果表明; SiC/SiO₂纳米线长可达数毫米, 单根SiC/SiO₂纳米线由直径30 nm的β-SiC晶体为内核和厚度约12 nm的无定形SiO₂壳层组成; 室温下SiC/SiO₂纳米线的PL发光峰与β-SiC单晶的发光特征峰相比有蓝移。最后, 讨论了核壳结构SiC/SiO₂纳米线的生成机制。     

Synthesis of SiC nanowires with in-situ deposition of carbon coating

SiC nanowires are effective reinforcement materials in ceramic matrix composites. A compliant coating such as carbon on nanowires is necessary in order to moderate the nanowire/matrix interfacial bounding for taking the most advantages of SiC nanowires. SiC nanowires with an in-situ deposition of carbon shell coating were fabricated by a novel chemical vapor growth process. Highresolution transmission electron microscopy examinations showed that the nanowires consisted of a single crystal beta-SiC core with an amorphous carbon shell 2-5 nm in thickness. The nanowires were straight with a length generally over 10 microm and a diameter 15-150 nm. The growth direction of the core SiC nanowires is (111). A simple three-step growth model for SiC nanowires was proposed based on a vapor-solid growth mechanism. Because the carbon-coated nanowires were grown directly on continuous Tyranno-SA SiC fibers, in-situ application of the present technique on the fabrication of SiC nanowire-reinforced SiC/SiC composites is expected.     

Al-doped single-crystalline SiC nanowires synthesized by pyrolysis of polymer precursors

Al-doped 6H-SiC nanowires are synthesized by catalyst-assisted pyrolysis of polymer precursors. The obtained nanowires were characterized using scanning electron microscopy, X-ray diffraction, transmission electron microscopy and selective area electron diffraction. We demonstrate that doping concentrations can be controlled by tailoring the Al concentrations in the precursors. We also find that Al-doping has a profound effect on the morphology and emission behavior of the SiC nanowires. The current results suggest a simple technique for synthesizing Al-doped SiC nanomaterials in a controlled manner, which are promising for applications in optical and electronic nanodevices.     

Direct growth of core-shell SiC-SiO(2) nanowires and field emission characteristics

A simple, direct synthesis method was used to grow core-shell SiC-SiO(2) nanowires by heating NiO-catalysed silicon substrates. A carbothermal reduction of WO(3) provided a reductive environment and carbon source to synthesize crystalline SiC nanowires covered with SiO(2) sheaths at the growth temperature of 1000-1100?°C. Transmission electron microscopy showed that the SiC core was 15-25?nm in diameter and the SiO(2) shell layer was an average of 20?nm in thickness. The thickness of the SiO(2) shell layer could be controlled using hydrofluoric acid (HF) etching. Field emission results of core-shell SiC-SiO(2) and bare SiC nanowires showed that the SiC nanowires coated with an optimum SiO(2) thickness (10?nm) have a higher field emission current than the bare SiC nanowires.