The behavior of the4He viscosity near the superfluid transition

Measurements of the shear viscosity at saturated vapor pressure through the lambda transition indicate a singular behavior of the form |1 – (/)|=A ^x , (where =|1–(T/T )|, with equal values for the critical exponent on both sides of the transition.Work sponsored by Consiglio Nazionale delle Ricerche, Rome (Italy).     

Broadband Frequency Study of the Zero Sound Attenuation Near the Quantum Limit in Normal Liquid 3He Close to the Superfluid Transition

The zero sound attenuation, ₀(,T, P), of normal liquid ³ He has been studied over a broad range of frequency (/2 = 8 – 50 MHz). Data has been collected at a constant temperature (T 1.1 mK) which is just above the superfluid transition temperature, T _c , when the liquid is near a pressure, P, of 1 bar. The results are compared to Landau's prediction in the quantum limit, k _B T k _B T _F , where ₀(,T,P) = (P) T ²[l + (/2k _B T)²]. Deviations from Landau's prediction are compared to the results of other workers and are discussed with respect to additional (unidentified) extrinsic background effects and (possible) intrinsic scattering mechanisms due to fluctuations in the liquid.     

Submillimeter surface impedance and relaxation: A case study of quasi-two-dimensional YBa2Cu3Ox

Surface impedance measurements in the normal and superconducting state are an excellent method to study the conduction electron dynamics in metals. This holds especially in the relaxation range, i.e., for distances traveled in one r.f. periods= _F/(_f is the Fermi velocity) being smaller or of the order of the penetration depth and mean free pathl. For materials with _F<-10⁷ cm/sec the relaxation range is easily accessible forf>0.1 THz. Then, in the normal state, relaxation defines the surface impedance with a penetration depth approaching the London penetration depth _L, andR _0l/2 as surface resistance allowing a measure of _L and relaxation time (T, ). In the superconducting state the photon interaction scales with _F/_L=l/ ( _f is the dimension of Cooper pairs for l) and causes at low frequencies an absorption rate growing with, which is decreasing with _F/l. The rate increase proportional to turns to a decrease above 0.1 THz, being accompanied by a decrease of with frequency which is stronger for large and small _F/l. These characteristic dependences allow a measurement of material parameters, anisotropy, and dynamics of electrons. To evaluate the consequences of theâ, b, and-direction anisotropy, the integral kernels for normal and superconducting surface impedances in its nonintegrated, angle-dependent form are presented, analyzed, and compared with impedance measurements above 0.1 THz of YBa₂Cu₃O_x.     

A superconducting vibrating reed applied to flux-line pinning. I. Theory

A theoretical treatment is given of a superconducting reed clamped at one end and performing flexural vibrations in a homogeneous longitudinal magnetic fieldB _a. When the flux lines are rigidly pinned the reed behaves like an ideal diamagnet whose bending distorts the external field. This generates a magnetic restoring force (line tension) B _a ² which is independent of the reed thicknessd, whereas the mechanical restoring force (stiffness) is d ³. Therefore, the resonance frequency /2 of a thin superconducting reed increases drastically when a fieldB _a is applied, or for a givenB _a, when the reed is cooled below its critical temperatureT _c. With decreasing pinning strength (characterized by Labusch's parameter ) the resonance frequency decreases, ²²– _pin ² where _pin ^{2 –1}, and an attenuation _v ^–2 occurs due to the viscous motion of flux lines. For larger vibration amplitudes an additional, amplitude-dependent damping _h ^–3 occurs due to the hysteretic losses caused by elastic instabilities during flux motion.On leave from Centro Atómico, Bariloche, Argentina.     

Electrical conductivity,thermoelectric power and dielectric constant of NiWO4

The a.c. electrical conductivity ( _ac), thermoelectric power () and dielectric constant () of antiferromagnetic NiWO₄ are presented. _ac and have been measured in the temperature range 300 to 1000 K and in the temperature range 600 to 1000 K. Conductivity data are interpreted in the light of band theory of solids. The compound obeys the exponential law of conductivity = ₀ exp (–W/kT). Activation energy has been estimated as 0.75eV. The conductivity result is summarized in the following equation =2.86 exp (–0.75 eV/kT)^–1 cm^–1 in the intrinsic region. The material is p-type below 660 K and above 950 K, and is n-type between 660 and 950 K.     

Frequency and temperature dependence of the millimeter wave conductivity of epitaxial YBa2Cu3O7 films

A millimeter wave spectrometer for frequencies between 100 and 350 GHz consisting of continuously tunable backward wave oscillators as sources and a quasioptical interferometer in the Mach-Zehnder configuration was used to measure the transmittivity in phase and amplitude of YBa₂Cu₃O₇ thin films on NdGaO₃ substrates. From the measured spectra we derived the real and imaginary part of the dynamic conductivity= ₁+i ₂ in the superconducting state as a function of temperature. The ₁(T) and ₂(T) values at 300 GHz were compared to corresponding values at 19 GHz determined by surface impedance measurements of the same films using a shielded dielectric resonator. Our observed frequency dependence of both ₁(T) and ₂(T) is consistent with a strong reduction of the quasiparticle scattering rate ^–1(T) with decreasing temperature belowT _c .     

Specific heat near the lambda point in 4He and 3He-4He mixtures: Test of universality of the critical exponent and the amplitude ratio,and observation of the critical-tricritical crossover effect

The specific heat under saturated vapor pressure of pure ⁴He and of six ³He-⁴He mixtures up to X = 0.545 was measured in the temperature range 3 × 10^–6 <¦T-T ¦ <10^–2 K. The critical exponents and along the path = are independent of X up to X = 0.545, where (= ₃ – ₄) is the difference between chemical potentials. If we take account of higher order terms, the exponent (= ) and the amplitude ratio A /A are independent of X up to X = 0.545. The values of and A /A are –0.023 and 1.090, respectively. The critical-tricritical crossover effect was observed for X = 0.545 and the boundary of crossover region closest to the critical region was at /T = (1–2) × 10^–4, where is the distance ¦T – T ¦ along the path = . This value is in good agreement with the estimated value by Riedel et al. But, remarkably, in the case of X = 0.439 this effect was not observed.     

Die Herleitung von Schalengleichungen über ein erweitertes Variationsprinzip bei Berücksichtigung der Querschubverzerrungen

Ohne ZusammenfassungBezeichnungen L Bezugsgrößen für dimensionslose Koordinaten - L charakteristische Schalenabmessung - t Schalendicke - Schalenparameter - körperfeste, krummlinige, dimensionslose Koordinaten der Schalenmittelfläche - Dimensionslose Koordinate in Richtung der Schalennormalen - i, j,...=1,2,3 Indizierung des dreidimensionalen Euklidischen Raumes - ,,...=1,2 Indizierung des zweidimensionalen Riemannschen Raumes - (...), Partielle Differentiation nach der Koordinate - (...), Kovariante Differentiation für Tensorkomponenten des zweidimensionalen Raumes nach der Koordinate - (...)| Kovariante Differentiation für Tensorkomponenten des dreidimensionalen Raumes nach der Koordinate - Variationssymbol - a ,a ₃ Basisvektoren der Schalenmittelfläche - V Verschiebungsvektor - U ,U ₃ Verschiebungskomponenten des Schalenraumes - v ,w,w ,W Verschiebungskomponenten der Schalenmittelfläche - Verhältnis der Metriktensoren des Schalenraumes und der Schalenmittelfläche - _ik Verzerrungstensor des Raumes - _{(, )}, Symmetrische Verzerrungstensoren der Schalenmittelfläche - _{[, ]} Antimetrischer Term des Verzerrungsmaßes - ^, Spannungstensor - n ,m ,q Tensorkomponenten der Schnittgrößenvektoren - p ,p,c Tensorielle Lastkomponenten     

Evaluation of endothelial cell integrins after in vitro contact with polyethylene terephthalate

The aim of this research was to evaluate the effect of polyethylene terephthalate (Woven Dacron) on the expression of endothelial integrins. Human umbilical vein endothelial cells were cultured on the material for 24 h. The integrins VLA-2 (₂₁-CD49b/CD29), receptor for laminin and collagen, VLA-5 (₅₁-CD49e/CD29), receptor for fibronectin, VLA-6 (₆₁-CD49f/CD29), receptor for laminin, and V₃-CD51/CD61 (receptor for vitronectin) were evaluated by flow cytometry. After contact with polyethylene terephthalate, a slight but significant decrease in the percentage of both CD29 and CD49e positive cells was observed, which suggests a lower number of cells expressing the fibronectin receptor ₅₁. Moreover, a significant increase in the mean channel for CD49b and for the vitronectin receptor CD51/CD61 was observed. The reduction in the fibronectin receptor could account for the poor endothelialization observed in vivo on polyethylene terephthalate. The increased expression of the vitronectin receptor, favoring the migration of smooth muscle cells, could give some information about the pathogenesis of intimal hyperplasia, which is a complication of vascular grafts. © 2001 Kluwer Academic Publishers     

Analytical Theory of DC SQUIDS Operating in the Presence of Thermal Fluctuations

A comprehensive analytical theory of symmetric DC SQUIDs is presented taking into account the effects of thermal fluctuations. The SQUID has a reduced inductance < 1/ where = 2LI_c/₀, L is the loop inductance, ₀ is the flux quantum, and I_c is the critical current of the identical Josephson junctions which are assumed to be overdamped. The analysis, based on the two dimensional Fokker–Planck equation, has been successfully performed in first order approximation with considered a small parameter. All important SQUID characteristics (circulating current, current-voltage curves, transfer function, and energy sensitivity) are obtained. In the limit 1( = 2k_BT/I_c0 is the noise parameter, k_B is the Boltzmann constant, and T is the absolute temperature) the theory reproduces the results of numerical simulations performed for the case of small thermal fluctuations. It was found that for < 1 the SQUID energy sensitivity is optimum when is higher than 1/, i.e., outside the range for which the present analysis is valid. However, for 1 the energy sensitivity has a minimum at L = L_F , where L_F = ( ₀ /2) ²/k_B , and therefore, in this case, the optimal reduced DC SQUID inductance is _opt = 1/, i.e., within the range for which the present analysis is valid. In contrast to the case of an RF SQUID, for a DC SQUID the transfer function decreases not only with increasing L/L_F but also with increasing (as 1/). As a consequence, the energy sensitivity of a DC SQUID with < 1/ degrades more rapidly (as ⁴ ) with the increase of than that of an RF SQUID does (as ² ).     

Superconducting state in M3C60: Strong vs. weak coupling

The superconducting state in the doped fullerenes is due to strong coupling (e.g.,2.1 for Rb₃C₆₀) to low-frequency intramolecular modes _L 250 cm^–1 (^21/2). The analysis is based on an equation describingT _c for any strength of the coupling and on recent isotope effect and NMR data.     

Magnetic field dependence of zero-sound attenuation close to the pair-breaking edge in3He-B due toJ=1−,J z =±1 collective modes

Our previous theory yielded for the Zeeman splitting of the imaginaryJ=1 collective mode in³He-B the result =2+0.25J _z ( is the effective Larmor frequency). In this paper we take into account the downward shift of the pair-breaking edge from 2 to 2₂– (₂ and ₁ are the longitudinal and transverse gap parameters). This leads to a complex Landé factor: the frequencies of theJ _z =±1 components become =2+0.39J _z , and the linewidths of these resonances become finite: =0.18. The coupling amplitudes of theJ _z =±1 components to density are found to be proportional to gap distortion, (₁–₂/(/)². Our results for the ultrasonic attenuation due to theJ _z =±1,J=1 modes are capable of explaining the field dependence of the attenuation close to the pair-breaking edge as observed by Dobbs, Saunders, et al. The observed peak is caused by theJ _z =–1 component: its height increases due to gap distortion as the field is increased, and the peak shifts downward in temperature and its width increases with the field due to the complex Landé factor. TheJ _z =+1 component gives rise to a corresponding dip relative to the continuum attenuation.     

The dielectric properties of alumina substrates for microelectronic packaging

The dielectric characterization of alumina substrate materials used in high-performance microelectronic packaging is described. These materials included both pure and impure polycrystalline substrates and, as a reference standard, pure and chromium-doped single crystals of alumina. For each material the permittivity () and dielectric loss () has been measured over a frequency range of 0.5 kHz to 10 MHz, at room temperature, and correlated with the structure and composition as determined by supplementary techniques. At room temperature the pure substrates show the frequency independence of both and , characteristic of pure single-crystal material. The permittivity (= 10.1) agrees closely with the average of the anisotropic values for the single crystal but the dielectric loss is an order of magnitude higher than in the single crystal, giving tan 1.5 × 10^–3. The impure substrates compared with the pure, show a small increase in and a marked, frequency-dependent increase in dielectric loss. Measurements have also been made in both the high- and low-temperature ranges (i.e. 20 to 600 ° C and 77 to 293 K, respectively) in order to establish the variation of permittivity with temperature and frequency. At temperatures below 200 °C the temperature coefficient of permittivity, [( –1)( + 2)]^–1 (/T) _p is about 9 × 10^–6 K^–1 for the pure materials but this increases rapidly with impurity addition.     

An apparatus for measuring the thermal conductivity and diffusivity of solid materials

An apparatus is described for measuring the thermal conductivity and diffusivity on small specimens of solid materials; also the results are shown which have been obtained for refractive high-alumina concrete by such measurements.Notation thermal conductivity at the mean temperature of specimens, W/m· °C - Q power of the central heater, W - F cross section area of a specimen, m² - t_1,2 temperature drop across the specimens, °C - ₁, ₂ difference in heights between the thermocouple beads, center-to-center, in the first and in the second specimen respectively, m - t temperature, °C - time coordinate, min - d₁= (d_1u+d_1l )/2 mean distance between specimen contact plane and nearest thermocouple beads, for the upper and lower specimen, m - d₂= (d_2u+d_2l )/2 mean distance between specimen contact plane and farthest thermocouple beads, for the upper and lower specimen, m - dt(d₁,)/d rate of temperature rise at section d₁ of the specimen at time, °C/h - t=t₁+t₂ sum of temperature drops in the specimens at time, °C - m heating rate, h^–1 - a thermal diffusivity of specimens, referred to their mean temperature, m²/h - =m/a, m^–1 b=¦(t_u–t_l)/t_u¦ heating nonuniformity factor Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 22, No. 6, pp. 1049–1054, June, 1972.     

Normal-State Optical Response Functions of MgB2 Superconductor

The reflectivity of superconducting MgB₂ (T _c = 39 K) has been measured on a randomly oriented thin film at room temperature over a wide-range of frequencies, 20 < 100000 cm^–1. The conductivity shows highly metallic behavior but cannot be explained with a simple Drude model alone. The electronic contribution is analyzed by a generalized Drude model. The scattering rate 1/() and the mass renormalization ratio m*()/m = 1 + () exhibit clear frequency dependence. The electron–phonon coupling strength is estimated to be 1.5 ± 0.5 while the plasma frequency _p is 2.4 eV.     

BCS temperature-dependent superconducting energy gap in domain boundaries of melt-textured YBa2Cu3O7

Attenuation and velocity measurements in low magnetic fields in the superconducting state of a melt-textured sample of YBa₂Cu₃O₇ are reported. Changes in both attenuation and relative velocitydv/v are observed at the penetration fieldH _c1 of its domain boundaries. The change indv/v atH _c1 appears to be proportional to the repulsive force between vortices. The change in atH _c1 may be produced by a relaxation process involving superconducting quasiparticles in the vicinity of the normal core of the vortices. Analysis of the relaxation time associated with this process yields a temperature-dependent energy gap which follows the BCS dependence. The relaxation time associated with the process is about 10^–11 sec.     

Thermal transport properties in helium near the superfluid transition. I.4He in the normal phase

The thermal conductivity and the associated relaxation time to reach steady-state conditions are reported for the normal phase of several very dilute mixtures of³He in⁴He (X<4 × 10^–6) at saturated vapor pressure near T. The measurements were made over the reduced temperature range 2.5 × 10^–6<<2×10^–1, where (T–T)/T, and are representative for pure⁴He. The spacing between the cell plates was 0.147 cm. The systematic uncertainty in the conductivity data is estimated to increase from 2% for =0.2 to 4% for =3 × 10^–6. The random scatter due to finite temperature resolution increases to 7% at the smallest . The data are in agreement within the combined uncertainty with recent ones by Tam and Ahlers (cell F, spacing 0.20 cm) and with previous ones in this laboratory taken with a different plate spacing. The thermal diffusivity coefficientD _T = / C _p obtained from is found to agree within better than 15% with the calculated one using data for , the density , and the specific heatC _p . Measurements of the effective boundary resistivityR _b in the superfluid phase are described.R _b is found to depend on the thermal history of the cell when cycled up to 77 K and above. Also,R _b shows the beginning of an anomalous increase for ¦¦10^–4. The possible reasons for this anomaly are discussed, and their impact on the analysis of conductivity data in the normal phase is appraised.     

Dislocation structures in Zr3Al-based alloys

Transmission electron microscopy has been used to investigate dislocation structures in deformed binary and ternary Zr₃Al-based alloys. In the binary alloy deformed at temperatures between 293 and 673 K the dislocations in the Zr₃Al phase consisted of a/31 1 2-type partial dislocations bounding superlattice intrinsic stacking fault on {1 1 1} planes. The {111} a/31 1 ¯2 stacking fault energy was approximately 2mJ m^–2 at 673 K. In binary specimens deformed between 873 and 1073 K cube slip predominated. Dislocations consisted mainly of a/2 1 1 0 pairs separated by antiphase boundary. For this temperature range the {1 0 0} a/201 1 antiphase boundary energy was between 30 and 45 mJ m^–2. Alloying with niobium or titanium was found to increase the {111} a/31 1¯2 stacking fault energy and thus increase the propensity for antiphase boundary-type dissociation.     

The Static Dielectric Constant of Liquid Water Between 274 and 418 K Near the Saturated Vapor Pressure

The complex dielectric constant (relative electric permittivity) of liquid water was redetermined in the temperature range 0°C<;t<145°C at pressures less than 440 kPa. In this work, _r was deduced from measurements of the resonant frequencies f of a novel, re-entrant, two-mode, radio-frequency resonator. The frequencies ranged from 23 to 84 MHz and were well within the low-frequency limit for because (2f _max)²<5×10^–5 where _max=1.8×10^–11 s is the maximum relaxation time of water under the conditions studied. The data for for two water samples differing in conductivity by a factor of 3.6 and for the two resonant modes differing in frequency by a factor of 2.6 were simultaneously fit by the polynomial function (t)=87.9144–0.404399t+9.58726×10^–4 t ²–1.32802×10^–6 t ³ with a remarkably small residual standard deviation of 0.0055. The present data are consistent with previously published data; however, they are more precise and internally consistent. The present apparatus was also tested with cyclohexane and yielded the values (t)=2.0551–0.00156t for 20°C<t<30°C, in excellent agreement with previously published values.     

Some electrical characteristics of lithium and yttrium sialons

Some electrical properties of hot-pressed lithium sialons, Li _x/8Si_6–3x/4Al_5x/8O _x N_8–x havingx<5 and an yttrium sialon were measured between 291 and 775 K; the former consisted essentially of a single crystalline phase whereas the latter contained 98% glassy phase. For lithium sialons, the charging and discharging current followed al(t) t ^–nlaw withn=0.8 at room temperature. The d.c. conductivities were about 10^–13 ohm^–1 cm^–1 at 291 K and rose to 5×10^–7 ohm^–1 cm^–1 at 775 K. At high temperatures electrode polarization effects were observed in d.c. measurements. The variation of the conductivity over the frequency range 200 Hz to 9.3 GHz followed the () ⁿ law. The data also fitted the Universal dielectric law,() ^n–1 well, and approximately fitted the Kramers-Kronig relation()/()– =cot (n/2) withn decreasing from 0.95 at 291 K to 0.4 at 775 K. The temperature variations of conductivities did not fit linearly in Arrhenius plots. Very similar behaviour was observed for yttrium sialon except that no electrode polarization was observed. The results have been compared with those obtained previously for pure sialon; the most striking feature revealed being that _d.c. for lithium sialon can be at least 10³ times higher than that of pure sialon. Interpretation of the data in terms of hopping conduction suggests that very similar processes are involved in all three classes of sialon.