Charge-Up Scanning Electron Microscopy Images of Intergranular Phases in Semiconducting BaTiO3 Positive Temperature Coefficient of Resistivity Ceramics

A charge-up image was observed in the intergranular phases of semiconducting BaTiO₃ positive temperature coefficient of resistivity (PTCR) ceramics when the ceramic specimens were heated to the Curie temperature in a scanning electron microscope. Experiments showed that this image was caused by intense secondary electron emission localized in the phases. This charge-up state seemed to be closely related to the PTCR mechanism.     

Role of Liquid Phase in PTCR Characteristics of (Ba0.7Sr0.3)TiO3 Ceramics

The role of liquid phase in the enhancement of the PTCR (positive temperature coefficient of resistance) effect in (Ba_0.7Sr_0.3)TiO₃ (BST) with the addition of AST (4Al₂O₃· 9SiO₂· 3TiO₂) is investigated in this paper. The AST–BST samples were characterized with optical microscopy, transmission electron microscopy, energy-dispersive spectroscopy, and impedance spectroscopy. Microscopic observations showed that slower cooling might facilitate the precipitation of the (Ba,Sr)TiO₃ phase from the liquid phase on matrix grains since the amount of liquid phase was reduced with a decreasing cooling rate. Impedance spectroscopy indicated that this variation accompanied the change in the intrinsic properties of grain boundaries, which could not be explained by well-known oxidation effects. With the aid of a brick-layer model and high-resolution transmission electron microscopy (HRTEM), it appeared that the change in electrical characteristics of grain boundaries with decreasing cooling rate originated from the precipitation of (Ba,Sr)TiO₃. Finally, the effect of precipitated (Ba,Sr)TiO₃ on the PTCR characteristics is discussed in terms of the acceptor-state density and the polarization state at grain boundaries.     

Effects of Yttrium Doping on the Grain and Grain-Boundary Resistivities of BaTiO3 for Positive Temperature Coefficient Thermistors

Several positive temperature coefficient (PTC) thermistors made of barium titanate with an excess of titania and containing additives such as yttria, and eventually silica, have been prepared following two different routes. The electrical properties of the ceramic samples have been studied at room temperature, i.e., below the transition temperature, using complex impedance spectroscopy. The latter proved to be very useful to measure separately the grain and grain-boundary resistivities which have been followed as a function of the yttrium concentration. They behave very similarly and go through a minimum for the same composition. From both electrical resistivity measurements and local chemical analysis, it is inferred that the average dopant concentration in the grains is lower than the nominal content in the starting powders. An overall interpretation is given, emphasizing the importance of liquid-phase sintering.     

Positive Temperature Coefficient of Resistivity Effect in Highly Donor–Doped Barium Titanate

BaTiO₃ ceramics doped with different La concentrations (0–12 mol%) were prepared by sintering under the reducing conditions of a nitrogen atmosphere containing 1% hydrogen. The critical donor concentration that causes blocking of the exaggerated grain growth was observed to be ∼10 mol% La. The samples, which were semiconducting after sintering under reducing conditions, were subsequently reoxidized by annealing in air to induce the positive temperature coefficient of resistivity (PTCR) effect. After reoxidation at 1150°C a noticeable PTCR effect was observed in the samples doped with La concentrations as high as 2.5 mol%. The room-temperature resistivity after reoxidation was found to increase with increasing donor concentration due to an increase in the thickness of the insulating layers at the grain boundaries. TEM analysis showed that reoxidation of the samples caused precipitation of the Ti-rich compound Ba₆Ti₁₇O₄₀ inside the doped BaTiO₃-matrix grains.     

Positive Temperature Coefficient of Resistivity Effect in Undoped, Atmospherically Reduced Barium Titanate

A sharp positive temperature coefficient of resistivity effect for undoped, fluorinated BaTiO_3−x samples was observed. The qualitative agreement between the behavior of BaTiO_3−x and La-doped BaTiO₃, with respect to the trap density at the boundaries, suggests that in the absence of counterdopants such as Mn, the main origin of surface acceptor states is chemisorbed gases. Impedance analysis indicates that, under the conditions of the present work, fluorine seems not to diffuse in significant amounts into the lattice. The treatment of the fluorinated samples in inert/reducing atmospheres did not markedly decrease the resistivity jump, suggesting that fluorine might be chemisorbed more strongly than oxygen. The composition of two different liquid phases, produced by excess titania and silica additions, did not have an important effect on the resulting properties.     

Investigation of Lamella-Twinned Crystallites and Dislocations in Paraelectric Phases of Bi2O3-Doped BaTiO3

Defects in the paraelectric phases of BaTiO₃ doped with Bi₂O₃ were analyzed by transmission electron microscopy under two-beam conditions. (111) twin structures were characterized by selected area diffraction and bright-field images. The orientation relationships of the (111) twins were determined using stereograms. Lamella-twinned crystallites included in the paraelectric phases were found in this system. Pure wedge fringes were analyzed in these grains using electron diffraction and imaging techniques. Double diffraction was observed in the overlapped regions of the matrix and the microtwin in the [113] direction, and high-density dislocation loops were seen in some grains. Weak-beam dark-field microscopy techniques were used to observe the dislocation loops, which predominately lay on {100} crystal planes with Burgers vectors a 〈100〉, and were found to be pure edge dislocations. Some dislocations were transformed into crystallographic shear planes.     

A Novel Method for the Uniform Incorporation of Grain-Boundary Layer Modifiers in Positive Temperature Coefficient of Resistivity Barium Titanate

The presently developed two-stage process involves diping the prefired porous disks of n -BaTiO₃ in nonaqueous solutions containing Al-buty rate, Ti-isopropoxide, and tetraethyl silicate and subsequent sintering. This leads to uniform distribution of the grain-boundary layer (GBL) modifiers (Al₂O₃+ TiO₂+ SiO₂) and better control of the grain size as well as the positive temperature coefficient of resistivity characteristics. The technique is particularly suited for GBL modifiers in low concentrations (< 1%).     

Positive Temperature Coefficient of Electrical Resistivity below 150 K in Barium Strontium Titanate

The resistivity of Ba_{(1– y )(1– x )}Sr _y (1– x )La _x TiO₃ceramics with x = 0.0025 and y = 0.25, 0.5, 0.75, and 0.9 was measured between 50 and 400 K. A resistivity anomaly corresponding to the positive temperature coefficient of electrical resistivity (PTCR) effect was observed for all compositions. The onset temperature decreased from 320 K ( y = 0.25) to 70 K ( y = 0.9). The extent of the PTCR effect was significantly enhanced for the strontium-rich composition and reached ∼8 orders of magnitude for y = 0.9. These results strongly suggested the possibility to fabricate PTCR devices based on (Sr,Ba)TiO₃ ceramics for application at cryogenic temperatures.     

An Alternative Explanation for the Origin of the Resistivity Anomaly in La-Doped BaTiO3

Semiconductivity in La-doped BaTiO₃ ceramics after high-temperature firing, e.g., 1350°C in air, is attributed to oxygen nonstoichiometry. In more heavily doped compositions, the observed resistivity rise is attributed to surface oxidation of the grains during cooling.     

Insulating Properties of Lanthanum-Doped BaTiO3 Ceramics Prepared by Low-Temperature Synthesis

Samples of composition Ba_{1− x} La _x Ti_{1− x /4}O₃, x = 0, 0.003, 0.03, and 0.10, were prepared by an alkoxide sol–gel route with final firing of ceramics at 1100°C, 2 h in air. All samples showed bulk insulating behavior with no evidence of semiconductivity caused by either direct donor doping or oxygen loss.     

Dislocation Loop Formation in Nonstoichiometric (Ba,Ca)TiO3 and BaTiO3 Ceramics

Dislocation loops observed in nonstoichiometric and stoichiometric (Ba,Ca)TiO₃, and in stoichiometric BaTiO₃ sintered in a reducing atmosphere, were characterized by conventional transmission electron microscopy (TEM) under two-beam conditions and high-resolution TEM atomic structure analysis. Dislocation loops mostly lay on {100} planes with Burgers vectors of type 〈100〉. The dynamic behavior of these dislocation loops during the electron beam irradiation (EBI), however, was classified into two different types of dislocation loops: in A-site-excess (Ba,Ca)TiO₃, contrasts of dislocation loops faded completely away; in BaTiO₃ and B-site-excess (Ba,Ca)TiO₃, fine-line contrasts remained. Dislocation loops with Burgers vectors of type 1/2〈100〉 and the resultant crystallographic shear (CS) structure with a displacement vector of type 1/2〈110〉 after EBI were proposed to interpret residual line images. Disappearance of these line images in A-site-excess (Ba,Ca)TiO₃ strongly suggests preferential Ca ion site occupancy at the CS structure.     

Synthesis of Y-Doped BaTiO3–(Bi1/2K1/2)TiO3 Lead-Free Positive Temperature Coefficient of Resistivity Ceramics and Their PTC Effects

As a lead-free positive temperature coefficient of resistivity (PTCR) material, (1– x mol%) BaTiO₃– x mol% (Bi_1/2K_1/2) TiO₃– y mol% Y₂O₃–0.5 mol% TiO₂ (BT– x BKT–2 y Y–0.5TiO₂) systems were prepared by the conventional solid-state reaction method. All samples containing <2 mol% BKT sintered in air possessed relatively low room-temperature resistivity (ρ₂₅) and high positive temperature coefficient (PTC) effect. However, when the BKT content exceeded 2 mol%, the sample was not semiconductive after sintering in air. The effects of sintering schedule on the properties of PTCR ceramics were discussed. The results showed that the optimum composition of BT–1BKT–0.2Y–0.5TiO₂, sintered at 1330°C for not-soaking and then fast quenched in air, achieved rather low ρ₂₅ of 28 Ω·cm and a high jump of resistivity (maximum resistivity [ρ_max]/minimum resistivity [ρ_min]) of 4.0 orders of magnitude with T _c about 155°C. The ρ₂₅ of the as-sintered sample could be further reduced to about 10 Ω·cm by annealing in N₂ at 450°C for 30 min, accompanied decrease on the PTC effect.     

Effect of Ba6Ti17O40/BaTiO3 Interface Structure on {111} Twin Formation and Abnormal Grain Growth in BaTiO3

A structural transition of Ba₆Ti₁₇O₄₀/BaTiO₃ interfaces from faceted to rough was induced by reducing oxygen partial pressure in the atmosphere. As the oxygen partial pressure decreased, the number densities of {111} twins and abnormal grain decreased. TEM observation showed that the twin formation was governed only by the faceting of the interface. Experimental evidence of {111} twin-assisted abnormal growth of faceted BaTiO₃ grains was also obtained.     

Positive Temperature Coefficient of Resistance Effect in Heavily Niobium-Doped Barium Titanate by the Growth of the Double-Twinned Seeds

Positive temperature coefficient of resistivity (PTCR) was attained in heavily niobium-doped BaTiO₃ through the addition of BaTiO₃ seed particles. The seed particles containing a double twin grew during heat treatment, and a uniform microstructure composed of large, coarse grains was obtained. The incorporation of niobium into the grain via grain growth probably caused the semiconducting and PTCR character of the niobium-doped BaTiO₃.     

Stabilization of β-Bi2O3 by Sb2O3 Doping

The metastable β form of bismuth sesquioxide was obtained by doping antimony oxide. The solubility of antimony was 4 to 10 at. %in β specimens, where more than 75% of the antimony atoms were valenced at 5+.     

Preparation of 0.95Bi1/2Na1/2TiO3·0.05BaTiO3 Ceramics by an Aqueous Citrate-Gel Route

This report details development of a route to solution-derived (1− x )Bi_1/2Na_1/2TiO₃· x BaTiO₃ powders. The method developed was the citrate-gel method—an evaporative, aqueous technique. When applied to 0.95Bi_1/2Na_1/2TiO₃·0.05BaTiO₃ (BNBT-5), the method produced perovskite phase powders that readily densified in the temperature range of 1000°C. The grain size of the sintered materials was on the order of 1 μm, and the weak-field dielectric properties at 1 MHz were similar to those reported for conventionally prepared materials sintered at higher temperatures (e.g., 1200°C).     

Electrical Properties of Sr0.7Ba0.3TiO3 Ceramics Doped with Nb2O5, 3Li2O · 2SiO2, and Bi2O3

The electrical properties of Sr_0.5Ba_0.3TiO₃ in the presence of Nb₂O₅ as a donor, 3Li₂O · 2SiO₂ as a sintering agent, and Bi₂O₃ as a dopant have been studied. When the compositions of the ceramics were 1 mol Sr_0.7Ba_0.3TiO₃+ 0.5 mol% Nb₂O₅+ 2 mol% 3Li₂O · 2SiO₂+ 0.2 mol% Bi₂O₃, the ceramics were sintered at 1100°C and exhibited the following characteristics: apparent dielectric constant ɛ, 25000; loss factor tan δ, 2%; insulating resistivity ρ_j, 10¹⁰Ω· cm; variation of dielectric constant with temperature Δɛ/ɛ (−25° to +85°C), +10%, −14%. ɛ and tan δ show only small changes with frequency. The study shows this ceramic can be used in multilayer technology.