共查询到18条相似文献,搜索用时 156 毫秒
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调节球形银粉和片状银粉不同配比,使片状银粉的质量分数为:0、20%、40%、60%、80%和100%。通过黏度、电阻率和附着力测试,以及可焊性实验和水煮实验,对片状银粉质量分数对烧结型浆料各性能的影响进行了研究。结果显示随着片状银粉用量的增加,浆料的黏度、触变性、电阻率及可焊性也随之增加;随着片状银粉质量分数的增加,烧结膜附着力先增加后降低,当质量分数达到40%时附着力最佳;随着片状银粉用量的增加,浆料的可靠性呈下降趋势。 相似文献
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以硝酸银(AgNO3)为银源、抗坏血酸为还原剂、苯并三氮唑(BTA)为分散剂,通过液相还原法制备了分散性好的超细银粉。实验研究了BTA用量,反应温度和还原剂溶液pH值等对制得银粉形貌和粒径的影响,并通过红外光谱分析了分散剂BTA的作用机理。结果表明:采用BTA为分散剂可以明显提高银粉的分散性,制得高分散的球形银粉;升高反应温度会降低银粉的粒径,但温度过高会导致银粉颗粒之间的团聚;通过调节还原剂溶液的pH值,可以将银粉的平均粒径控制在0.83~2.40μm;红外光谱分析表明,BTA分子能吸附在银粒子的表面,从而产生空间位阻作用有效阻止银颗粒间的团聚。 相似文献
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将聚醚多元醇与多聚磷酸反应生成聚醚多元醇磷酸酯,再与双酚A环氧树脂反应制得聚醚多元醇磷酸酯改性环氧树脂,并通过红外光谱和固化物断面形貌观察证明增韧改性成功。将双酚A环氧树脂和聚醚改性环氧树脂按不同比例混合,并添加相同成分相同比例的助剂、银粉制成导电胶,对比测试导电胶的体积电阻率、热导率、剪切强度、硬度等性能参数,发现随着聚醚改性环氧树脂占比的增加,导电胶的导电导热性能不断提升,体积电阻率最低达到1.9×10-5Ω·cm,热导率最高可达15.9 W·(m·K)-1,硬度和剪切强度逐渐降低到67.7 HD和16.8 MPa。观察导电胶断面的微观形貌,发现随着聚醚改性环氧树脂含量的增加,导电胶断口表面光滑平整的树脂逐渐变得粗糙不平,断面银粉由裸露逐渐被树脂包裹。分析认为聚醚改性环氧树脂引入大量柔性基团,降低导电胶硬度与强度的同时提高了固化收缩率,从而提高导电导热性能。在剪切力作用下,裂纹不再沿树脂与银粉之间的界面扩展,而是沿树脂基体内强度较低的柔性基团扩展。 相似文献
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以环氧树脂为基体,银粉为填料,制备出IC封装用导电银胶。研究了环氧树脂与银粉的比例、银粉的形貌和粒径以及触变剂SiO2的用量对导电银胶触变性的影响。结果表明,银胶触变性随树脂/银粉质量比的减小而增大,当其为0.2时,触变指数达到5.68。在一定粒径范围内,银胶的触变性与银粉粒径呈反比关系;银胶触变性随SiO2的用量增大而增大。 相似文献
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高导电片状银包铜粉的制备技术研究 总被引:1,自引:1,他引:0
采用[Ag(NH3)]+溶液对片状铜粉进行包覆,研究了铜粉粒径、[Ag(NH3)]+溶液浓度、包覆温度、分散剂含量等因素对银包铜粉银含量和电阻率等的影响。结果表明:通过控制包覆温度(60℃)、银氨络离子浓度(0.8mol·L–1)以及分散剂含量(1.0g·L–1),得到了电阻率为0.8×10–3?·cm的银包铜粉。XRD分析表明,该银包铜粉只有Ag和Cu相,不含中间产物。银包铜粉松装密度为0.50g·cm–3左右,比表面积为3.1~3.3m2·g–1。 相似文献
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Various-sized Ag nanoparticles capped with oleylamine were synthesized by means of a thermal decomposition process for low-temperature
electronic devices. The Ag nanoparticles, which had diameter of 5.1 nm to 12.2 nm, were synthesized in incubation and ripening
stages related to nucleation and growth. After the Ag nanoparticles were made into ink with a proper solvent, inkjet printing
and thermal sintering methods were used to form a metal thin film with thickness of 100 nm. A type of thermal sintering related
to percolation transformation and surface sintering was conducted at a temperature much lower than the melting point of bulk
Ag. The electrical resistivity was examined with the aid of a four-point probe system and compared with the resistivity of
bulk Ag, showing that the Ag film had much higher resistivity than bulk Ag. To improve the electrical stability and properties,
we applied hexamethyldisilazane (HMDS) surface treatment to the substrate and dipped the as-deposited films into methanol.
Both treatments helped to diminish and stabilize the resistivity of the printed conductive films. 相似文献
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水基流延制备片式PTCR陶瓷的研究 总被引:1,自引:0,他引:1
采用sol-gel法制备纳米BaTiO3基PTCR粉体,并以其为原料,采用水基流延成型工艺制备片式PTCR。研究了在sol-gel法制备BaTiO3粉体中,施受主元素含量、陶瓷的烧成温度与PTC效应、晶粒尺寸的关系以及水基流延工艺中各种添加剂对浆料和膜片性能的影响。结果表明:以纳米BaTiO3粉体为原料、水基流延的片式PTCR坯片,在1240℃下就能半导化,所得陶瓷样品的升阻比高于104,温度系数大于13%℃–1,平均晶粒尺寸小于2μm。 相似文献
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为了研究激光参数对Ag纳米粒子胶体的影响,采用不同重复率和能量密度的脉冲激光对蒸馏水中的Ag靶烧蚀10 min来制备Ag纳米粒子胶体.通过透射电镜(TEM)和紫外-可见(UV-Vis)分光光度计分析了Ag纳米粒子胶体的大小、形貌和吸收光谱,同时由Image-ProPlus软件分析计算了粒子的平均粒径及其分布.结果表明,由重复率为10 Hz,能量密度为4.2 J/cm2的脉冲激光烧蚀10 min后制备的Ag胶体纳米粒子平均粒径最小(D=17.54 nm),粒径分布最窄(δ=36.86 nm),且形貌较均匀.从而证实了通过调节激光参数来控制纳米粒子尺寸和形貌的可行性.另外,在实验基础上,应用熔化生长"与爆炸"模型讨论了激光烧蚀工艺参数对Ag纳米粒子胶体的影响规律. 相似文献
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Enrique Cabrera Sara Olibet Dominik Rudolph Per Erik Vullum Radovan Kopecek Daniel Reinke Carmen Herzog Daniel Schwaderer Gunnar Schubert 《Progress in Photovoltaics: Research and Applications》2015,23(3):367-375
Good quality contacts between metal and silicon emitter are crucial for high crystalline solar cell efficiencies. We investigate the impact of defects originating from electrically inactive phosphorus on contact formation within silver thick film metallized silicon solar cells. For this purpose, emitters with varying sheet resistance, depth, and dead layer were metallized with silver pastes from different generations. Macroscopic contact resistivity measurements were compared with the microscopic contact configurations studied by scanning electron microscopy. The density of direct contacts between Ag crystallites grown into Si and the Ag finger bulk is essential for low contact resistivity. The presence of glass‐free regions needed for such direct contacts depends on the paste composition and on the surface texture, and does not vary with the Si emitter properties. Indeed, the decrease in contact resistivity correlates with increasing density of Ag crystallites embedded in the Si surface. Furthermore, the density of Si surface‐embedded Ag crystallites scales proportional to the electrically inactive P and is independent of the sheet resistance. Using the newest silver paste, the Ag crystallite density is independent of the emitter doping, but the Ag crystallite size increases as a function of the thickness of the dead layer. Transmission electron microscopy characterization of the excess P‐doped Si crystal lattice shows that significant strain and Si bond weakening may play a major role for both Ag crystallite nucleation and growth. Finally, we studied Si crystal defects by metallizing nanocracks, dislocations, and grain boundaries and found that Ag crystallite nucleation is defect‐property dependent. Copyright © 2013 John Wiley & Sons, Ltd. 相似文献