巨磁电阻传感器的特性测试与应用前景分析

介绍了巨磁电阻效应的发现、发展和应用情况，在自制实验平台上，分别测试了深圳华夏公司和美国NVE公司传感器的静、动态特性。结果表明，NVE传感器在线性区间、静态灵敏度、线性度、磁滞等方面优于华夏产品。在测试结果的基础上，对NVE公司巨磁电阻传感器的应用前景进行了探讨，给出了该传感器应用于电力系统母线大电流测试时的具体方案，并对方案实现过程中可能遇到的问题进行分析。     

多功能压电惯性传感器的测试技术

本文讨论了以现有测试系统为基础,测试新研制的压电惯性传感器输出模拟量及脉冲量的可行性,并给出了测试方法与测试结果。     

巨磁电阻传感器的特性测试与应用前景分析

介绍了巨磁电阻效应的发现、发展和应用情况,在自制实验平台上,分别测试了深圳华夏公司和美国NVE公司传感器的静、动态特性。结果表明,NVE传感器在线性区间、静态灵敏度、线性度、磁滞等方面优于华夏产品。在测试结果的基础上,对NVE公司巨磁电阻传感器的应用前景进行了探讨,给出了该传感器应用于电力系统母线大电流测试时的具体方案,并对方案实现过程中可能遇到的问题进行分析。     

巨磁电阻传感器的特性测试与应用前景分析

介绍了巨磁电阻效应的发现、发展和应用情况,在自制实验平台上,分别测试了深圳华夏公司和美国NVE公司传感器的静、动态特性.结果表明,NVE传感器在线性区间、静态灵敏度、线性度、磁滞等方面优于华夏产品.在测试结果的基础上,对NVE公司巨磁电阻传感器的应用前景进行了探讨,给出了该传感器应用于电力系统母线大电流测试时的具体方案,并对方案实现过程中可能遇到的问题进行分析.     

硅压阻式传感器的温度特性及其补偿

基于硅压阻式传感器的工艺过程与后续电路设计，讨论了减小其温度影响的措施。文中对在相同的硅基底上，采用诸如扩散、离子注入、薄膜淀积以及溅射等不同加工工艺制作实现的不同的压敏电阻特性，特别是温度特性进行了探讨和比较。针对一种具体的硅杯结构的压阻式传感器，设计、选择了加工工艺，给出了压敏电阻的近似温度补偿公式，讨论了传感器补偿电路的实现方案。     

基于高冲击台的高量程加速度传感器动态性能分析

高量程传感器是测试系统核心器件,传感器性能直接影响测试系统精确度,所以对传感器的动态性能分析十分重要。针对高量程加速度传感器动态校准装置自动化程度不高,提出了基于高冲击台的动态校准系统。试验采用冲击比较法,以B&K公司8309传感器作为标准传感器对实验室自制58#压阻式量程100000g加速度传感器进行动态校准,分析传感器动态性能,动态性能不理想,对传感器进行动态建模,为以后的动态补偿提供依据。     

基于电子元器件低频噪声特性和相关测试技术

基于电子元器件低频噪声特性测试中,针对影响低频噪声测量系统准确性的因素,提出了一种改进型的低频噪声测量方法,优化设计电子元器件低频电噪声测试系统,放大噪声测试部分噪声,并可以分析电子元器件低频噪声测试过程中的低频噪声特性,从而可以有效证实通过测试低频噪声,就能够验证电子元器件质量是否缺陷,分析电子元器件的使用可靠性.在...     

小房间的低频混响时间特性对音质的影响

从分析声学小房间的室内声场和语音声学特性出发,探讨小房间(普通教室)在低频段的声场共振现象,研究低频混响时间特性对普通教室音质的影响.增强的低频驻波声级对中高频信号具有极大的掩蔽作用,会导致教室语言清晰度降低,因此,不能忽略过长的低频混响对教室音质的负面影响.此外,实验测定并分析了音质表现极差与优异(声学改造前后的表现)的私家听音室的混响时间特性及其变化,结果表明,在低频段下降的混响时间特性是听音室获得优异音质的关键.基于此,对加装扩声系统的普通教室提出声学处理建议.     

锂离子电池高G值冲击安全测试技术

针对锂离子电池带来的安全问题,讨论了锂离子电池的工作原理、充放电特性.结合某型号便携设备用锂离子电池分析了高G值冲击过程对电池的损害,研究了锂离子电池高G值冲击的安全测试技术.     

一种新型高量程微加速度传感器侵彻测试

设计一种新型高量程压阻式微加速度传感器.并将其应用于对铜靶和混凝土靶进行100000 g以上的侵彻测试.实验结果表明,该传感器在侵彻钢靶具有良好的抗过载能力.对实测过栽时程曲线进行系统分析,结果表明该传感器与988传感器的侵彻过载数据基本吻合:侵彻混凝土靶时出现传感器粱断裂现象.需进一步从封装方面改进.     

弹载天线载体截短对天线辐射特性的影响

应用几何绕射理论（GTD）对弹载口径天线载体截短对子午面辐射特性的影响进行了分析计算。截断模型包括弹体尾部圆柱部分、尖端锥体部分以及同时截短尾部圆柱部分和截断尖端锥体部分。计算结果表明，将弹体适当截短对弹载天线子午面内辐射特性影响很小，完全可以成绩单 载天线的测量中对弹体进行截短处理。     

858nm激光激发下掺Nd^3＋氟化物陶瓷体上的转换发光研究

本文报道了三种方法制备的掺Nd^3＋氟化物烧结陶瓷体的上转换发光特性。不同的制备方法可以造成基质中稀土离子分布的不同。在一定条件下基质中可聚合形成合适的稀土离子的团簇,而稀土离子团簇的形成可以造成稀土离子间强烈的相互作用并导致了新颖的上转换通道的出现。     

因特网的演化--从NGI、NGN到LSI

目前因特网的发展趋势是正在出现公共因特网和运营商的可管理的IP网并存的局面,可管理的IP网与因特网虽然都是基于IP技术,但是它们的基本理念是不同的.因特网将向下一代因特网(NGI)演化,IPv6为其主要特征.可管理的IP网基于IP技术,但是没有接受因特网的全部理念,它将智能由网络边缘移到网络内业务节点处.可管理的IP网结合各种增值业务模块将演化成下一代网(NGN).NGI和NGN以及固网和移动网络的融合发展将形成无所不在的网络,通信连接对象将扩展到"机-机",传感器和执行机构都将成为网络节点,网格将成为一种重要应用模式,网络节点将增加到上万亿个,这种大规模网络(LSI)将是今后网络研究的重点.     

The influence of thermal annealing to the characteristics of AlGaInP/GaInP multiple quantum wells light-emitting diode wafers

The influence of thermal annealing to the characteristics of AlGaInP/GaInP multiple quantum wells (MQWs) light-emitting diode wafers was studied by means of electrochemical capacitance-voltage (ECV) and photoluminescence (PL). Compared with the sample unannealed, the hole carrier concentration of p-GaP layer increased from 5.5×10¹⁸ to 6.5×10¹⁸ cm⁻³, and the hole carrier concentration of p-AlGaInP layer increased from 6.0×10¹⁷ to 1.1×10¹⁸ cm⁻³, after wafer was annealed at 460 °C for 15 min in nitrogen. The hole carrier concentrations of p-GaP layers and p-AlGaInP layers did not obviously change when the annealing temperature varied from 460 to 700 °C. However, after the sample was annealed under 780 °C for 15 min, the hole carrier concentration of p-GaP layer and p-AlGaInP layer decreased to 8×10¹⁷ and 1.7×10¹⁷ cm⁻³, respectively. At the same time, the diffusion of Mg atoms was observed.     

The Rising of Fiber Constructed Piezo/Triboelectric Nanogenerators: From Material Selections,Fabrication Techniques to Emerging Applications

Piezo/triboelectric nanogenerators (PTNGs) have become the research frontier in many cutting-edge applications, which open up promising possibilities for broad prospects. Fiber materials are the ideal candidate for constructing high-performance PTNGs owing to the compelling features of lightweight, programmable structure, favorable softness, and brilliant breathability. To this end, working mechanisms, material selections, structural designs and fabrication methods of fiber constructed PTNGs are comprehensively presented. An in-depth analysis of emerging applications ranging from intelligent clothing, smart home, and personalized medicine to artificial intelligence is thoughtfully demonstrated. Furthermore, the current problems and potential challenges that hinder their large-scale commercial applications are systematically discussed, laying emphasis on the future development direction of fiber constructed PTNGs. It is expected that this review will supply the audience with some universal strategies and fresh ideas to conduct deep research on fiber constructed PTNGs toward better performance.     

The stability of electrical characteristics of Ti/n-Si/Ag,Ti/n-Si/Cu and Ti/n-Si/AgCu diodes prepared under the same conditions with respect to increasing aging time

The purpose of this study is to fabricate Ti/n-Si/Ag, Ti/n-Si/Cu and Ti/n-Si/AgCu Schottky type diodes and to investigate the effects of aging time on the diode parameters such as ideality factor, barrier height, series resistance, interface state density and rectification ratio. High purity titanium (Ti) metal was deposited on the back side of the n-Si semiconductor and then the Ti/n-Si junction was annealed at 420 °C in nitrogen atmosphere. This junction showed ohmic behavior. To fabricate rectifier contacts, Ag, Cu metals and AgCu alloy have been evaporated on the other polished surface of n-Si with Ti ohmic contact. Ag and Cu ratios in the AgCu alloy which are used in the process of preparing the Schottky contact were taken in equal weights. Thus, Ti/n-Si/Ag, Ti/n-Si/Cu and Ti/n-Si/AgCu Schottky type diodes were prepared under the same conditions. The current-voltage (I-V) characterization of Ti/n-Si/Ag, Ti/n-Si/Cu and Ti/n-Si/AgCu diodes were immediately made at room temperature in dark conditions. To investigate the effect of aging time, the I-V measurements of the diodes have been repeated after 1, 7, 15, 30 and 90 days. Characteristic parameters of the diode were calculated from the I-V measurements which are taken with respect to aging time. The results were compared. From these results, it can clearly be seen that the electrical characteristics of diode which is made from AgCu alloy are more stable than other two diodes.