Low-energy excitations of graphene on Ru(0 0 0 1)

The structure and the acoustic phonon branches of graphene on Ru(0 0 0 1) have been experimentally investigated with helium atom scattering (HAS) and analyzed by means of density functional theory (DFT) including Grimme dispersion forces. In-plane interactions are unaffected by the interaction with the substrate. The energy of 16 meV for the vertical rigid vibration of graphene against the Ru(0 0 0 1) surface layer indicates an interlayer effective force constant about five times larger than in graphite. The Rayleigh mode observed for graphene/Ru(0 0 0 1) is almost identical to the one measured on clean Ru(0 0 0 1). This is accounted for by the strong bonding to the substrate, which also explains the previously reported high reflectivity to He atoms of this system. Finally, we report the observation of an additional acoustic branch, closely corresponding to the one already observed by HAS in graphite, which cannot be ascribed to any phonon mode and suggests a possible plasmonic origin.     

Buffer layer free graphene on SiC(0 0 0 1) via interface oxidation in water vapor

Intercalation of various elements has become a popular technique to decouple the buffer layer of epitaxial graphene on SiC(0 0 0 1) from the substrate. Among many other elements, oxygen can be used to passivate the SiC interface, causing the buffer layer to transform into graphene. Here, we study a gentle oxidation of the interface by annealing buffer layer and monolayer graphene samples in water vapor. X-ray photoelectron spectroscopy demonstrates the decoupling of the buffer layer from the SiC substrate. Raman spectroscopy is utilized to investigate a possible introduction of defects. Angle-resolved photoemission spectroscopy shows that the electronic structure of the water vapor treated samples. Low-energy electron microscopy (LEEM) measurements demonstrate that the decoupling takes place without changes in the surface morphology. The LEEM reflectivity spectra are discussed in terms of two different interpretations.     

Dissociative adsorption of small molecules at vacancies on the graphite (0 0 0 1) surface

The adsorption of molecular and atomic hydrogen as well as other molecules in the atmosphere on vacancies in the (0 0 0 1) graphite surface are investigated using density functional theory. Atomic hydrogen adsorbs with energies ranging from 4.7 to 2.3 eV. The validity of the model is confirmed by the good agreement between calculated vibrational spectra and those of high-resolution electron energy loss spectroscopy. It is shown that molecular hydrogen dissociates with a barrier of 1.1 eV on this model system. Water and oxygen also dissociate with respective barriers of 1.6 and 0.2 eV. Carbon dioxide and nitrogen have no interaction with the defect whereas carbon monoxide is incorporated into the vacancy with an activation energy of 1.5 eV. A comparison is made with the reactivity of graphene edges, both zigzag and armchair.     

Large area buffer-free graphene on non-polar (0 0 1) cubic silicon carbide

Graphene is, due to its extraordinary properties, a promising material for future electronic applications. A common process for the production of large area epitaxial graphene is a high temperature annealing process of atomically flat surfaces from hexagonal silicon carbide. This procedure is very promising but has the drawback of the formation of a buffer layer consisting of a graphene-like sheet, which is covalently bound to the substrate. This buffer layer degenerates the properties of the graphene above and needs to be avoided.We are presenting the combination of a high temperature process for the graphene production with a newly developed substrate of (0 0 1)-oriented cubic silicon carbide. This combination is a promising candidate to be able to supply large area homogenous epitaxial graphene on silicon carbide without a buffer layer.We are presenting the new substrate and first samples of epitaxial graphene on them. Results are shown using low energy electron microscopy and diffraction, photoelectron angular distribution and X-ray photoemission spectroscopy. All these measurements indicate the successful growth of a buffer free few layer graphene on a cubic silicon carbide surface. On our large area samples also the epitaxial relationship between the cubic substrate and the hexagonal graphene could be clarified.     

Growth of single and multi-layer graphene on Ir(1 0 0)

We report on the high temperature chemical vapor deposition of ethylene on Ir(1 0 0) and the resulting development of single and multi-layer graphene films. By employing X-ray photoemission electron spectromicroscopy, low energy electron microscopy and related microprobe methods, we investigate nucleation and growth of graphene as a function of the concentration of the chemisorbed carbon lattice gas. Further, we characterize the morphology and crystal structure of graphene as a function of temperature, revealing subtle changes in bonding occurring upon cooling from growth to room temperature. We also identify conditions to grow multi-layer flakes. Their thickness, unambiguously determined through the analysis of the intensity of the Ir 4f and C 1s emission, is correlated to the electron reflectivity at very low kinetic energy. The effective attenuation length of electrons in few-layer graphene is estimated to be 4.4 and 8.4 Å at kinetic energies of 116 and 338 eV, respectively.     

Catalytic hydrogenation of benzene to cyclohexene on Ru(0 0 0 1) from density functional theory investigations

The catalytic hydrogenation of benzene on transition metal surfaces is of fundamental importance in petroleum industry. With the aim to improve its efficiency and particularly the selectivity to cyclohexene, in this contribution we perform periodic density functional theory calculations to determine the potential energy surface in the hydrogenation of benzene on Ru(0 0 0 1). By following the Horiuti–Polanyi mechanism with a step-wise addition of hydrogen adatoms, we investigate the adsorption of all the possible reaction intermediates and identify the most favored adsorption configuration for each intermediate. In particular, the most stable isomer for the same C₆H_n (n = 8, 9, 10) species are revealed as the most conjugated isomers, which are consistent with those in the gas phase. The elementary hydrogenation reactions of the most stable intermediates are then investigated under different H coverage conditions: the reaction barriers are calculated to be 0.68–0.97 eV at the low H coverage and 0.32–1.14 eV at the high H coverage. The high H coverage reduces significantly the overall barrier height of hydrogenation. With the determined pathway, we propose that the hydrogenation of benzene on Ru(0 0 0 1) follows the mechanism with the step-wise hydrogenation of neighboring C atoms in the ring, i.e., 1–2–3… hydrogenation. The selectivity to cyclohexene on Ru is also discussed, which highlights the importance of the π mode adsorption of benzene and also the adverse effect of secondary reaction process involving the readsorption and hydrogenation of cyclohexene.     

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

Quasi-free-standing monolayer and bilayer graphene is grown on homoepitaxial layers of 4H-SiC. The SiC epilayers themselves are grown on the Si-face of nominally on-axis semi-insulating substrates using a conventional SiC hot-wall chemical vapor deposition reactor. The epilayers were confirmed to consist entirely of the 4H polytype by low temperature photoluminescence. The doping of the SiC epilayers may be modified allowing for graphene to be grown on a conducing substrate. Graphene growth was performed via thermal decomposition of the surface of the SiC epilayers under Si background pressure in order to achieve control on thickness uniformity over large area. Monolayer and bilayer samples were prepared through the conversion of a carbon buffer layer and monolayer graphene respectively using hydrogen intercalation process. Micro-Raman and reflectance mappings confirmed predominantly quasi-free-standing monolayer and bilayer graphene on samples grown under optimized growth conditions. Measurements of the Hall properties of Van der Pauw structures fabricated on these layers show high charge carrier mobility (>2000 cm²/Vs) and low carrier density (<0.9 × 10¹³ cm⁻²) in quasi-free-standing bilayer samples relative to monolayer samples. Also, bilayers on homoepitaxial layers are found to be superior in quality compared to bilayers grown directly on SI substrates.     

Mechanism of hydrogen adsorption/absorption at thin Pd layers on Au(1 1 1)

Hydrogen adsorption and absorption at thin palladium deposits of 0.8-10 monolayers (ML) on Au(1 1 1) was studied in 0.1 M H₂SO₄ and HClO₄ using cyclic voltammetry, ac voltammetry, and impedance spectroscopy in the absence and in the presence of poison, crystal violet. Hydrogen adsorption on palladium is more reversible in sulfuric acid than in perchloric acid but it occurs at potentials 30 mV more positive in latter. The charge-transfer resistance exhibits a minimum at ∼0.27 V versus RHE and decreases with increasing in Pd deposit thickness in both acids. Adsorption capacitance at 0.8 ML Pd reaches maximum at the same potential. At other deposits the pseudo-capacitance starts to increase at lower overpotentials indicating the beginning of absorption, even at 2 ML Pd. The double layer capacitance is similar for all the deposits in sulfuric acid and it has a sharp maximum at 0.27 V versus RHE. In perchloric acid a broad maximum is observed. Crystal violet inhibits hydrogen adsorption but makes hydrogen absorption more reversible. The results suggest a fast direct hydrogen absorption mechanism that proceeds in parallel with slower hydrogen adsorption and indirect absorption.     

Crystalline alloys produced by mercury electrodeposition on Pt(1 1 1) electrode at room temperature

In situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED) were used to characterize mercury film electrodeposited onto a Pt(1 1 1) electrode at room temperature. Depending on the amount of Hg deposit, two different growth modes were observed. At low Hg coverage, crystalline (0 0 0 1)Hg adlayer accompanied by 30°-rotated (1 1 1)-Pt patches was found on Pt(1 1 1). Deposition of multilayer Hg resulted in layered PtHg₂ and PtHg₄ amalgams, which grew epitaxially by aligning their (2 0 1) and planes, respectively, parallel to the Pt(1 1 1) substrate. The preference of these epitaxial relationships for the electrochemically formed Pt-Hg intermetallic compounds on Pt(1 1 1) could result from minimization of the surface energy.     

Mono- and few-layer nanocrystalline graphene grown on Al2O3(0 0 0 1) by molecular beam epitaxy

We report on the growth of nanocrystalline graphene on c-plane Al₂O₃ substrates by molecular beam epitaxy. Graphene films are grown by carbon evaporation from a highly-oriented-pyrolytic-graphite filament and cover the entire surface of two-inch wafers. The structural quality of the material (degree of crystallinity) is investigated in detail by Raman spectroscopy and is revealed to be strongly dependent on the growth temperature and time. We observe that adjacent graphene layers grow parallel to each other and to the substrate surface with domains sizes larger than 30 nm. Transmission electron microscopy confirms the planarity of the nanocrystalline films and X-ray photoelectron spectroscopy proves the predominant sp² nature of the grown layers. Transport measurements reveal that the layers are p-type doped with mobility values up to 140 cm²/Vs at room temperature. The present results demonstrate the potential of molecular beam epitaxy as a technique for realizing the controlled growth of graphene (mono- and few-layer) over large areas directly on an insulating substrate.     

Revealing the atomic structure of the buffer layer between SiC(0 0 0 1) and epitaxial graphene

On the SiC(0 0 0 1) surface (the silicon face of SiC), epitaxial graphene is obtained by sublimation of Si from the substrate. The graphene film is separated from the bulk by a carbon-rich interface layer (hereafter called the buffer layer) which in part covalently binds to the substrate. Its structural and electronic properties are currently under debate. In the present work we report scanning tunneling microscopy (STM) studies of the buffer layer and of quasi-free-standing monolayer graphene (QFMLG) that is obtained by decoupling the buffer layer from the SiC(0 0 0 1) substrate by means of hydrogen intercalation. Atomic resolution STM images of the buffer layer reveal that, within the periodic structural corrugation of this interfacial layer, the arrangement of atoms is topologically identical to that of graphene. After hydrogen intercalation, we show that the resulting QFMLG is relieved from the periodic corrugation and presents no detectable defect sites.     

Formation of high-quality quasi-free-standing bilayer graphene on SiC(0 0 0 1) by oxygen intercalation upon annealing in air

We report on the conversion of epitaxial monolayer graphene on SiC(0 0 0 1) into decoupled bilayer graphene by performing an annealing step in air. We prove by Raman scattering and photoemission experiments that it has structural and electronic properties that characterize its quasi-free-standing nature. The (6√3 × 6√3)R30° buffer layer underneath the monolayer graphene loses its covalent bonding to the substrate and is converted into a graphene layer due to the oxidation of the SiC surface. The oxygen reacts with the SiC surface without inducing defects in the topmost carbon layers. The high-quality bilayer graphene obtained after air annealing is p-doped and homogeneous over a large area.     

Density functional theory study on adsorption of thiophene on TiO2 anatase (0 0 1) surfaces

In order to develop a fundamental understanding of the adsorption mechanism of thiophenic compounds on TiO₂-based adsorbents for ultra-deep desulfurization of liquid hydrocarbon fuels, a density functional theory (DFT) study was conducted on the adsorption of thiophene over the TiO₂ anatase (0 0 1) surface. The perfect, O-poor (with oxygen vacancies), and O-rich (with activated O₂ on the surface) anatase (0 0 1) surfaces were built, and the interaction of thiophene molecule with these surfaces was examined. The adsorption configuration and adsorption energy on the different surfaces and sites were estimated. The results showed that thiophene may be adsorbed on both the perfect and O-poor surfaces through an interaction between the Ti cations on the surface and the S atom in thiophene, whereas on the O-rich surface through an interaction of the activated O atoms (the dissociatively or associatively adsorbed O₂) on the surface with the S atom in thiophene to form a sulfone-like surface species. The adsorption of thiophene on the O-rich surface is significantly stronger than adsorption on the perfect and O-poor surfaces on the basis of the calculated adsorption energies. The results indicate that the activated O₂ on the TiO₂ anatase (0 0 1) surface may play an important role in the adsorption desulfurization over the TiO₂-based adsorbents, and increased concentration of the activated O₂ on the surface may result in improvement of the adsorption capacity of the adsorbents.     

Kinetics and thermodynamics of carbon segregation and graphene growth on Ru(0 0 0 1)

We measure the concentration of carbon adatoms on the Ru(0 0 0 1) surface that are in equilibrium with C atoms in the crystal’s bulk by monitoring the electron reflectivity of the surface while imaging. During cooling from high temperature, C atoms segregate to the Ru surface, causing graphene islands to nucleate. Using low-energy electron microscopy (LEEM), we measure the growth rate of individual graphene islands and, simultaneously, the local concentration of C adatoms on the surface. We find that graphene growth is fed by the supersaturated, two-dimensional gas of C adatoms rather than by direct exchange between the bulk C and the graphene. At long times, the rate at which C diffuses from the bulk to the surface controls the graphene growth rate. The competition among C in three states - dissolved in Ru, as an adatom, and in graphene - is quantified and discussed. The adatom segregation enthalpy determined by applying the simple Langmuir-McLean model to the temperature-dependent equilibrium concentration seriously disagrees with the value calculated from first-principles. This discrepancy suggests that the assumption in the model of non-interacting C is not valid.     

Catalytic conversion of olefins on supported cubic platinum nanoparticles: Selectivity of (1 0 0) versus (1 1 1) surfaces

The surface chemistry and catalytic conversion of cis- and trans-2-butenes on platinum (1 0 0) facets were characterized via surface-science and catalytic experiments. Temperature-programed desorption studies on Pt(1 0 0) single crystals pointed to the higher hydrogenation probability of the trans isomer at the expense of a lower extent of CC double-bond isomerization. To test these trends under catalytic conditions, shape selective catalysts were prepared by dispersing cubic platinum colloidal nanoparticles (which expose only (1 0 0) facets) onto a high-surface-area silica xerogel support. Infrared absorption spectroscopy and transmission electron microscopy were used to determine the conditions needed to remove the organic surfactants without loosing the original narrow size distribution and cubic shape of the original metal nanoparticles. Catalytic kinetic measurements with these materials corroborated the surface-science predictions, and pointed to a switch in isomerization selectivity from preferential cis-to-trans conversion with Pt(1 0 0) surfaces to the reverse trans-to-cis reaction with Pt(1 1 1) facets.     

A first-principles study on the role of hydrogen in early stage of graphene growth during the CH4 dissociation on Cu(1 1 1) and Ni(1 1 1) surfaces

The influence of hydrogen for CH₄ dissociation on Cu(1 1 1) and Ni(1 1 1) surfaces has been investigated by using the density functional theory. The two possible reactions, i.e. H-abstraction reaction (CH_x + H → CH_x−1 + H₂) and direct dehydrogenation reaction (CH_x + H → CH_x−1 + 2H), are studied. Our results show that H-abstraction reaction has higher energy barrier than direct dehydrogenation reaction on Cu(1 1 1), while for Ni(1 1 1), only the direct dehydrogenation reaction is observed. The microkinetic analysis supports that H-abstraction reaction is less competitive than the direct dehydrogenation reaction at broad coverage of H atom on Cu(1 1 1) surface. The major intermediate changes from CH to CH₃ on Cu(1 1 1) and Ni(1 1 1) with the increase of H₂ partial pressure. Furthermore, the behavior of free C atoms on both clean and H pre-adsorbed metal surfaces is discussed. The adsorbed H atom hinders the polymerization of the C atoms on Cu(1 1 1), resulting in sufficient time for C relaxed to the most stable site and further lead to a prefect graphene pattern formation, while H atom has little effect on such process for Ni(1 1 1).     

Carbon monoxide adsorption and dissociation on Mn-decorated Rh(1 1 1) and Rh(5 5 3) surfaces: A first-principles study

Efficient CO activation on Rh particles promoted by Mn cocatalysts is important to the activity for the conversion of the syngas (CO and H₂) to hydrocarbon and oxygenates. To study the effect of the step edge and promotion of Mn cocatalysts on CO activation, we studied the CO dissociation on Mn-decorated Rh(1 1 1) and stepped Rh(5 5 3) surfaces using density functional theory calculations. We found that the presence of the step edge and Mn stabilizes the transition state and reaction products: compared to clean Rh(1 1 1), calculated barrier for CO dissociation on Mn-decorated Rh(5 5 3) is lowered by about 1.60 eV, and corresponding reaction energies with respect to CO in gas phase changes from endothermic (0.21 eV) to strong exothermic (−1.73 eV). The present work indicates that the addition of Mn cocatalysts and decrease of Rh particle sizes improves greatly the activity of CO dissociation.