A novel monolithic HBT-p-i-n-HEMT integrated circuit with HBTactive feedback and p-i-n diode variable gain control

We report the world's first functional MMIC circuit integrating HBT's, HEMT's, and vertical p-i-n diodes on a single III-V substrate. The 1-10 GHz variable gain amplifier monolithically integrates HEMT, HBT, and vertical p-i-n diode devices has been fabricated using selective MBE and a merged processing technology. The VGA offers low-noise figure, wideband gain performance, and good gain flatness over a wide gain control range. A noise figure below 4 dB was achieved using a HEMT transistor for the amplifier stage and a wide bandwidth of 10 GHz. A nominal gain of 10 dB was achieved by incorporating HBT active feedback techniques and 12 dB of gain control range was obtained using a vertical p-i-n diode as a varistor, all integrated into a compact 1.5×0.76 mm² MMIC. The capability of monolithically integrating HBT's, HEMT's, and p-i-n's in a merged process will stimulate the development of new monolithic circuit techniques for achieving optimal performance as well as provide a foundation for high performance mixed-mode multifunctional MMIC chips     

110-120-GHz monolithic low-noise amplifiers

The authors discuss the development of 110-120-GHz monolithic low-noise amplifiers (LNAs) using 0.1-mm pseudomorphic AlGaAs/InGaAs/GaAs low-noise HEMT technology. Two 2-stage LNAs have been designed, fabricated, and tested. The first amplifier demonstrates a gain of 12 dB at 112 to 115 GHz with a noise figure of 6.3 dB when biased for high gain, and a noise figure of 5.5 dB is achieved with an associated gain of 10 dB at 113 GHz when biased for low-noise figure. The other amplifier has a measured small-signal gain of 19.6 dB at 110 GHz with a noise figure of 3.9 dB. A noise figure of 3.4 dB with 15.6-dB associated gain was obtained at 113 GHz. The authors state that the small-signal gain and noise figure performance for the second LNA are the best results ever achieved for a two-stage HEMT amplifier at this frequency band     

Low-noise high electron mobility transistors for monolithic microwave integrated circuits

High electron mobility transistors (HEMT's) for monolithic microwave integrated circuits have been fabricated that have demonstrated excellent performance. External transconductance of 300 mS/mm is observed and noise figures of 1 and 1.8 dB with associated gains of 16.1 and 11.3 dB at 8 and 18 GHz, respectively, have been measured. These are comparable to the best reported noise figures for either HEMT's or MESFET's and are the highest associated gains reported for such low-noise figures. Analysis of these devices indicates that further improvements in these results is possible through optimization of HEMT layers and fabrication technology to reduce gate-source parasitic resistance.     

Determination of InP HEMT noise parameters and S-parameters to 60GHz

A millimeterwave experimental technique is described for directly determining the noise parameters and scattering parameters of V-band InP HEMT's. The parameters are suitable for the design of monolithic millimeterwave integrated circuits since they represent the InP HEMT as it would appear in the monolithic environment. The method relies on careful characterization of the measurement system and the InP HEMT packages or test fixtures. Results are provided for an InP HEMT with 1.37 dB minimum noise figure and a maximum stable gain of 12.74 dB at 57 GHz. In addition, it is shown that noise parameters measured between 2 GHz and 26 GHz can be extrapolated to 60 GHz, and that consistent S-parameters can be obtained for InP HEMT's in precision packages and test fixtures     

超低噪声K波段放大器仿真设计

介绍了一种超低噪声K波段放大器的设计方法,以高电子迁移率晶体管为基础,采用3级放大拓扑结构,提出了一种改进型的负反馈网络,较好地改善了电路的增益平坦度。利用Agilent公司的微波电路CAD（计算机辅助设计）软件ADS2006对电路原理图及版图进行了仿真设计,最终实现了在工作频段19．5GHz～21．5GHz内,噪声系数小于1．5dB、增益大于30dB的优异电性能。     

A C-band high-dynamic range GaN HEMT low-noise amplifier

A C-band low-noise amplifier (LNA) is designed and fabricated using GAN HEMT power devices. The one-stage amplifier has a measured noise figure of 1.6 dB at 6 GHz, with an associated gain of 10.9 dB and IIP3 of 13 dBm. it also exhibits broadband operation from 4-8 GHz with noise figure less than 1.9 dB. The circuit can endure up to 31 dBm power from the input port. Compared to circuits based on other material and technology, the circuit shows comparable noise figure with improved dynamic range and survivability.     

Low-noise HEMT using MOCVD

Low-noise HEMT AlGaAs/GaAs heterostructure devices have been developed using metal organic chemical vapor deposition (MOCVD). The HEMT's with 0.5-µm-long and 200-µm-wide gates have shown a minimum noise figure of 0.83 dB with an associated gain of 12.5 dB at 12 GHz at room temperature. Measurements have confirmed calculations on the effect of the number of gate bonding pads On the noise figure for different gate Widths. Substantial noise figure improvement was observed Under low-temperature operation, especially compared to conventional GaAs MESFET's. A two-stage amplifier designed for DBS reception using the HEMT in the first stage has displayed a noise figure under 2.0 dB from 11.7 to 12.2 GHz.     

A NOVEL Ku-BAND LOW NOISE AMPLIFIER WITH HEMT AND GaAs MMIC

A novel Ku-band low noise amplifier with a high electron mobility transistor (HEMT)and a GaAs monolithic microwave integrated circuit (MMIC) has been demonstrated. Its noisefigure is less-than 1.9dB with an associated gain larger than 27dB and an input/output VSWRless than 1.4 in the frequency range of 11.7-12.2GHz. The HEMT and the microwave series in-ductance feedback technique are used in the first stage of the amplifier, and a Ku-band MMIC isemployed in the last stage. The key to this design is to achieve an optimum noise match and a min-imum input VSWR matching simultaneously by using the microwave series inductance feedbackmethod. The B J-120 waveguides are used in both input and output of the amplifier.     

An 8 GHz high power AlGaN/GaN HEMT VCO

A high power X-band hybrid microwave integrated voltage controlled oscillator(VCO) based on Al-GaN /GaN HEMT is presented.The oscillator design utilizes a common-gate negative resistance structure with open and short-circuit stub microstrip lines as the main resonator for a high Q factor.The VCO operating at 20 V drain bias and-1.9 V gate bias exhibits an output power of 28 dBm at the center frequency of 8.15 GHz with an efficiency of 21%.Phase noise is estimated to be -85 dBc/Hz at 100 kHz offset and -1...     

一种新颖的具有HEMT和GaAs MMIC的Ku波段低噪声放大器

本文介绍了一种具有高电子迁移率晶体管(HEMT)和砷化镓单片微波集成电路(GaAs MMIC)的Ku波段低噪声放大器。在11.7～12.2GHz频率范围内,该放大器的噪声系数小于1.9dB,相关增益大于27dB,输入和输出驻波比小于1.4。放大器第一级采用了HEMT和微波串联电感反馈技术,放大器未级采用了Ku波段GsAs MMIC。设计的关键是采用微波串联电感反馈方法同时获得最佳噪声和最小输入驻波匹配。放大器的输入端和输出端均为BJ-120波导。     

一个8GHz高功率AlGaN/GaN HEMT VCO

基于中科院微电子所的AlGaN/GaN HEMT工艺研制了一个X波段高功率混合集成压控振荡器（VCO）。电路采用源端调谐的负阻型结构,主谐振腔由开路微带和短路微带并联构成,实现高Q值设计。在偏置条件为VD=20V, VG=-1.9V, ID=150mA时,VCO在中心频率8.15 GHz处输出功率达到28 dBm,效率21%,相位噪声-85 dBc/Hz@100 KHz,-128 dBc/Hz@1 MHz。调谐电压0~5V时,调谐范围50 MHz。分析了器件闪烁噪声对GaN HEMT基振荡器相位噪声性能的主导作用。测试结果显示了AlGaN/GaN HEMT工艺在高功率低噪声微波频率源中的应用前景。     

AlSb/InAs HEMT's for low-voltage, high-speed applications

The design, fabrication, and characterization of 0.1 μm AlSb/InAs HEMT's are reported. These devices have an In_0.4Al _0.6As/AlSb composite barrier above the InAs channel and a p ⁺ GaSb layer within the AlSb buffer layer. The HEMT's exhibit a transconductance of 600 mS/mm and an f_T of 120 GHz at V_Ds=0.6 V. An intrinsic f_T of 160 GHz is obtained after the gate bonding pad capacitance is removed from an equivalent circuit. The present HEMT's have a noise figure of 1 dB with 14 dB associated gain at 4 GHz and V_Ds=0.4 V. Noise equivalent circuit simulation indicates that this noise figure is primarily limited by gate leakage current and that a noise figure of 0.3 dB at 4 GHz is achievable with expected technological improvements. HEMT's with a 0.5 μm gate length on the same wafer exhibit a transconductance of 1 S/mm and an intrinsic f_TL_g, product of 50 GHz-μm     

基于GaN HEMT新型负反馈结构固态宽带功率放大器的研究

The design and fabrication of an ultra-broadband power amplifier based on a Ga N HEMT, which operates in the frequency range from 3 to 8 GHz, is presented in this paper. A TGF2023-02 Ga N HEMT chip from Tri Quint is adopted and modeled. A novel negative feedback structure is applied in the circuit. The measured results show that the amplifier module has a wide range frequency response that is almost consistent with those of simulation at frequencies from 3 to 6.5 GHz. The measured power gain is greater than 7 d B between 3 and 6.5 GHz.The saturated output power is 38.5 d Bm under DC bias of Vds D28 V, Vgs D 3:5 V at the frequency of 5.5 GHz.     

InAlAs/InGaAs/InP基PHEMTs小信号建模及低噪声应用

利用改进的小信号模型对采用100nmInAlAs/InGaAs/InP工艺设计实现的PHEMTs器件进行建模, 并设计实现了一款W波段单片低噪声放大器进行信号模型的验证。为了进一步改善信号模型低频S参数拟合差的精度, 该小信号模型考虑了栅源和栅漏二极管微分电阻, 在等效电路拓扑中分别用Rfs和Rfd表示.为了验证模型的可行性, 基于该信号模型研制了W波段低噪声放大器单片.在片测试结果表明:最大小信号增益为14.4dB@92.5GHz, 3dB带宽为25GHz@85-110GHz.而且, 该放大器也表现出了良好的噪声特性, 在88GHz处噪声系数为4.1dB, 相关增益为13.8dB.与同频段其他芯片相比, 该放大器单片具有宽3dB带宽和高的单级增益.     

On the performance analysis and design of an integrated front-end PIN/HBT photoreceiver

A detailed study on the performance analysis and optimum design of an integrated front-end PIN/HBT photoreceiver for fiber-optic communication is presented. Receiver circuits with two different transimpedance amplifiers-a single-stage common emitter (CE) amplifier and a three-stage amplifier comprising a CE amplifier and two emitter followers (EFs), are analyzed assuming a standard load of 50 /spl Omega/. A technique to include the transit-time effect of a PIN photodetector on the overall receiver circuit analysis is introduced and discussed. Gain-bandwidth product (GB) and gain-bandwidth-sensitivity measure product (GBS) are obtained as functions of feedback resistance (R/sub F/) and various device parameters. Hence, some optimum designs are suggested using a photodetector of area 100 /spl mu/m/sup 2/ and with a feedback resistance of 500 /spl Omega/. The bandwidth plays a major role in determining the optimum designs for maximum GB and maximum GBS. A bandwidth >8 GHz has been obtained for the photoreceiver even with a single-stage CE amplifier. The optimum design for a receiver with a three-stage amplifier shows a bandwidth of 35 GHz which is suitable for receivers operating well beyond 40 Gb/s; however, in this case, the gain is reduced. The performance of different fixed square-emitter structures are investigated to choose the optimum designs corresponding to different gains. Very low power dissipation has been estimated for the optimized devices. The noise performance of the devices with optimum designs was calculated in terms of the minimum detectable optical power for a fixed bit-error rate of 10/sup -9/. The present design indicates that GB and noise performance can be improved by using an optimum device design.     

Design, modeling, and characterization of monolithically integratedInP-based (1.55 μm) high-speed (24 Gb/s) p-i-n/HBT front-endphotoreceivers

High-speed, long-wavelength InAlAs/InGaAs OEIC photoreceivers based on a p-i-n/HBT shared layer integration scheme have been designed, fabricated and characterized. The p-i-n photodiodes, formed with the 6000 Å-thick InGaAs precollector layer of the HBT as the absorbing layer, exhibited a responsivity of ~0.4 A/W and a -3 dB optical bandwidth larger than 20 GHz at λ=1.55 μm. The fabricated three-stage transimpedance amplifier with a feedback resistor of 550 Ω demonstrated a transimpedance gain of 46 dBΩ and a -3 dB bandwidth of 20 GHz. The monolithically integrated photoreceiver with a 83 μm p-i-n photodiode consumed a small dc power of 35 mW and demonstrated a measured -3 dB optical bandwidth of 19.5 GHz, which is the highest reported to date for an InAlAs/InGaAs integrated front-end photoreceiver. The OEIC photoreceiver also has a measured input optical dynamic range of 20 dB. The performance of individual devices and integrated circuits was also investigated through detailed CAD-based analysis and characterization. Transient simulations, based on a HSPICE circuit model and previous measurements of eye diagrams for a NRZ 2³¹-1 pseudorandom binary sequence (PRBS), show that the OEIC photoreceiver is capable of operation up to 24 Gb/s     

A monolithic DC temperature compensation bias scheme for multistageHEMT integrated circuits

This work benchmarks the first demonstration of a multistage monolithic HEMT IC design which incorporates a DC temperature compensated current-mirror bias scheme. This is believed to be the first demonstrated monolithic HEMT bias scheme of its kind. The active bias approach has been applied to a 2-18 GHz five-section low noise HEMT distributed amplifier which achieves a nominal gain of 12.5 dB and a noise figure <2.5 dB across a 2-18 GHz band, The regulated current-mirror scheme achieves better than 0.2% current regulation over a 0-125°C temperature range, The RF gain response was also measured over the same temperature range and showed less than 0.75 dB gain degradation. This results in a -0.006 dB/°C temperature coefficient which is strictly due to HEMT device G_m variation with temperature. The regulated current-mirror circuit can be employed as a stand-alone V_gs-voltage reference circuit which fan be monolithically applied to the gate bias terminal of existing HEMT ICs for providing temperature compensated performance, This monolithic bias approach provides a practical solution to DC bias regulation and temperature compensation for HEMT MMICs which can improve the performance, reliability, and cost of integrated microwave assemblies (IMAs) used in space-flight military applications     

A noise model for high electron mobility transistors

A model to explain the noise properties for AlGaAs/GaAs HEMT's, AlGaAs/InGaAs/GaAs pseudomorphic HEMT's (P-HEMT's) and GaAs/AlGaAs inverted HEMT's (I-HEMT's) is presented. The model Is based on a self-consistent solution of Schrodinger and Poisson's equations. The influence of the drain-source current, frequency and device parameters on the minimum noise figure F_min and minimum noise temperature T_min, for different HEMT structures are presented. The study shows that P-HEMT's have a better noise performance than the normal and inverted HEMT's. The present model predicts that a long gate P-HEMT device will exhibit a better noise performance than a conventional HEMT. There is a range of doped epilayer thickness where minimum noise figure is a minimum for pseudomorphic HEMT's which is not observed in conventional and inverted HEMT's. The calculated noise properties are compared with experimental data and the results show excellent agreement for all devices     

（英）D波段InP基高增益、低噪声放大芯片的设计与实现

利用90-nm InAlAs/InGaAs/InP HEMT工艺设计实现了两款D波段（110~170 GHz）单片微波集成电路放大器。两款放大器均采用共源结构,布线选取微带线。基于器件A设计的三级放大器A在片测试结果表明：最大小信号增益为11.2 dB@140 GHz,3 dB带宽为16 GHz,芯片面积2.6×1.2 mm2。基于器件B设计的两级放大器B在片测试结果表明：最大小信号增益为15.8 dB@139 GHz,3dB带宽12 GHz,在130~150 GHz频带范围内增益大于10 dB,芯片面积1.7×0.8 mm2,带内最小噪声为4.4 dB、相关增益15 dB@141 GHz,平均噪声系数约为5.2 dB。放大器B具有高的单级增益、相对高的增益面积比以及较好的噪声系数。该放大器芯片的设计实现对于构建D波段接收前端具有借鉴意义。     

InP-based HEMT's with Al0.48In0.52AsxP1-x Schottky layers

In this letter we report on the DC and RF performance of InP-based HEMT's with Al_0.48In_0.52As_xP_1-x Schottky layers and GaInAs/InP composite channels. By replacing the Al_0.48In_0.52As Schottky layer with Al_0.48 In_0.52As_xP_1-x we have been able to increase the bandgap of the Schottky layer and achieve record breakdown voltages for 0.15 μm gate-length InP-based HEMT's. The 0.15 μm gate-length HEMT's have gate-to-drain breakdown voltages of over 13 V with current densities of 620 mA/mm and maximum transconductances of 730 mS/mm. On a wafer with a higher sheet charge we have obtained gate-to-drain breakdown voltages of 10.5 V with current densities of over 900 mA/mm. These are the highest breakdown voltages reported for 0.15 μm gate-length InP-based HEMT's with such high current densities. At 10 GHz a 450 μm wide HEMT has demonstrated 350 mW (780 mW/mm) of output power with power-added efficiency of 60% and 12 dB gain