Synthesis of BaCu(B2O5) Ceramics and their Effect on the Sintering Temperature and Microwave Dielectric Properties of Ba(Zn1/3Nb2/3)O3 Ceramics

BaCu(B₂O₅) ceramics were synthesized and their microwave dielectric properties were investigated. BaCu(B₂O₅) phase was formed at 700°C and melted above 850°C. The BaCu(B₂O₅) ceramic sintered at 810°C had a dielectric constant (ɛ_r) of 7.4, a quality factor ( Q × f ) of 50 000 GHz and a temperature coefficient of resonance frequency (τ_f) of −32 ppm/°C. As the BaCu(B₂O₅) ceramic had a low melting temperature and good microwave dielectric properties, it can be used as a low-temperature sintering aid for microwave dielectric materials for low temperature co-fired ceramic application. When BaCu(B₂O₅) was added to the Ba(Zn_1/3Nb_2/3)O₃ (BZN) ceramic, BZN ceramics were well sintered even at 850°C. BaCu(B₂O₅) existed as a liquid phase during the sintering and assisted the densification of the BZN ceramic. Good microwave dielectric properties of Q × f =16 000 GHz, ɛ_r=35, and τ_f=22.1 ppm/°C were obtained for the BZN+6.0 mol% BaCu(B₂O₅) ceramic sintered at 875°C for 2 h.     

BiNbO4-Based Glass–Ceramic Composites for Microwave Applications

The effect of a bespoke glass sintering aid, 0.3Bi₂O₃–0.3Nb₂O₅–0.3B₂O₃–0.1SiO₂ (BN1), developed from the base ceramic composition, BiNbO₄ (BN), on the sinterability, microstructure, and microwave (MW) dielectric properties of BN ceramics has been investigated. Densities >97% theoretical could be achieved at 1020°C for samples with up to 15% BN1 additions. The resulting microstructure was composed of BN laths surrounded by a residual glass phase that contained small fibrous crystals. Some evidence of dissolution of BN crystals was observed. Optimum properties were exhibited for samples with 15 wt% of glass addition sintered for 4 h at 1020°C with a relative permittivity ɛ_r=38, a MW quality factor Q × f ₀=17 353 at 5.6 GHz, and a temperature coefficient of resonant frequency τ_f=−10 ppm/°C. The high Q × f ₀, ɛ_r, and low τ_f, coupled with a relatively low sintering temperature, suggest that the use of bespoke glass sintering aids of this type may have great potential for the fabrication of MW ceramics.     

Microwave Dielectric Properties of Li2TiO3 Ceramics Doped with ZnO–B2O3 Frit

A type of new low sintering temperature ceramic, Li₂TiO₃ ceramic, has been found. Although it is difficult for the Li₂TiO₃ compound to be sintered compactly at temperatures above 1000°C for the volatilization of Li₂O, dense Li₂TiO₃ ceramics were obtained by conventional solid-state reaction method at the sintering temperature of 900°C with the addition of ZnO–B₂O₃ frit. The sintering behavior and microwave dielectric properties of Li₂TiO₃ ceramics with less ZnO–B₂O₃ frit (≤3.0 wt%) doping were investigated. The addition of ZnO–B₂O₃ frit can lower the sintering temperature of the Li₂TiO₃ ceramics, but it does not apparently degrade the microwave dielectric properties of the Li₂TiO₃ ceramics. Typically, the good microwave dielectric properties of ɛ_r=23.06, Q × f =32 275 GHz, τ_f = 35.79 ppm/°C were obtained for 2.5 wt% ZnO–B₂O₃ frit-doped Li₂TiO₃ ceramics sintered at 900°C for 2 h. The porosity was 0.08%. The Li₂TiO₃ ceramic system may be a promising candidate for low-temperature cofired ceramics applications.     

Dielectric Properties of the "Twinned" 8H-Hexagonal Perovskite Ba8Nb4Ti3O24

The dielectric properties of dense ceramics of the "twinned" 8H-hexagonal perovskite Ba₈Nb₄Ti₃O₂₄ are reported. Single-phase powders were obtained from the mixed-oxide route at 1325°C and ceramics (>92% of the theoretical X-ray density) by sintering in air or flowing O₂ at 1400°–1450°C. The ceramics are dc insulators with a band gap >3.4 eV that resonate at microwave frequencies with relative permittivity, ɛ_r∼44–48, quality factor, Q × f _r∼21 000–23 500 GHz (at f _r∼5.5 GHz) and temperature coefficient of resonant frequency, TC _f,∼+115 ppm/K.     

Low-Temperature Sintering and Microwave Dielectric Properties of the Zn2SiO4 Ceramics

B₂O₃ was added to nominal composition Zn_1.8SiO_3.8 (ZS) ceramics to decrease their sintering temperature for application to low-temperature cofired ceramic (LTCC) devices. B₂O₃ reacted with SiO₂ to form a liquid phase containing SiO₂ and B₂O₃. The composition and melting temperature of the liquid phase depended on the sintering temperature and the B₂O₃ content. The specimen containing 20.0 mol% of B₂O₃ sintered at 900°C exhibited high microwave dielectric properties of Q × f =53 000 GHz, ɛ _r=5.7, and τ_f=−16 ppm/°C, confirming the promising potential of the B₂O₃-added ZS ceramics as candidate materials for the LTCC devices.     

Improved Microwave Dielectric Properties of Ba6Ti1−xSnxNb4O18 Ceramics

Single-phase polycrystalline microwave dielectric ceramics Ba₆Ti_{1− x} Sn _x Nb₄O₁₈, with x changing from 0 to 1, were synthesized by the solid-state reaction method. All the solid solutions fitted well with A₆B₅O₁₈ cation-deficient hexagonal perovskite structure. The substitution of Sn for Ti effectively enhanced the quality factor and controlled τ_f. With increasing Sn content, the dielectric constant decreased from ∼47 to ∼32, and the Q × f value increased significantly from 11 530 to 28 496 GHz, with τ_f varying from 64 to 0 ppm/°C. A zero τ_f was realized when Sn was fully replaced by Ti with the composition Ba₆SnNb₄O₁₈.     

Synthesis and Microwave Dielectric Properties of Re3Ga5O12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) Ceramics

Re₃Ga₅O₁₂ (Re: Nd, Sm, Eu, Dy, Yb, and Y) garnet ceramics were synthesized and their microwave dielectric properties were investigated for advanced substrate materials in microwave integrated circuits. The Re₃Ga₅O₁₂ ceramics sintered at 1350°–1500°C had a high-quality factor ( Q × f ) ranging from 40 000 to 192 173 GHz and a low-dielectric constant (ɛ_r) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τ_f) in the range of −33.7 to −12.4 ppm/°C. In particular, the Sm₃Ga₅O₁₂ ceramics sintered at 1450°C exhibited good microwave dielectric properties of ɛ_r=12.4, Q × f =192 173 GHz, and τ_f=−19.2 ppm/°C.     

Microwave Dielectric Properties of CaTiO3-CaAl1/2Nb1/2O3 Ceramics Doped with Li3NbO4

The microwave dielectric properties of CaTi_{1− x} (Al_1/2Nb_1/2) _x O₃ solid solutions (0.3 ≤ x ≤ 0.7) have been investigated. The sintered samples had perovskite structures similar to CaTiO₃. The substitution of Ti⁴⁺ by Al³⁺/Nb⁵⁺ improved the quality factor Q of the sintered specimens. A small addition of Li₃NbO₄ (about 1 wt%) was found to be very effective for lowering sintering temperature of ceramics from 1450–1500° to 1300°C. The composition with x = 0.5 sintered at 1300°C for 5 h revealed excellent dielectric properties, namely, a dielectric constant (ɛ_r) of 48, a Q × f value of 32 100 GHz, and a temperature coefficient of the resonant frequency (τ_f) of −2 ppm/K. Li₃NbO₄ as a sintering additive had no harmful influence on τ_f of ceramics.     

Influence of Non-Stoichiometry on the Structure and Properties of Ba(Zn1/3Nb2/3)O3 Microwave Dielectrics. IV. Tuning τf and the Part Size Dependence of Q×f

High Q ceramics of Ba₃W₂O₉ (BW)-substituted Ba(Zn_1/3Nb_2/3) O₃ (BZN) were prepared with a zero τ_f through the partial substitution of Zn by Ni and Co. The small concentrations of B-site vacancies introduced by the substitution of BW accelerated the kinetics and stability of the cation ordering and lowered the sintering temperature. Dense, zero τ_f, ordered solid solutions such as 0.99Ba(Zn_0.3Co_0.7)_1/3Nb_2/3O₃–0.01BW with ɛ_r=34.4 and Q × f =82 000 at ∼8 GHz could be obtained after sintering at 1380°C for 5 h and annealing at 1300°C for 24 h. Partially ordered ceramics in the Zn/Co and Zn/Ni solid solutions show a large gradient in the ordering throughout the pellets, which produces a resonant frequency dependence of their Q × f value. The ordering gradient is associated with the increased constraints on the growth of the 1:2 ordered structure within the interior of larger and thicker pellets and can be minimized by extended annealing.     

Microwave Dielectric Properties of 5Li2O–0.583Nb2O5–3.248TiO2 Ceramics with V2O5

The effects of V₂O₅ addition on the sintering behavior, microstructure, and the microwave dielectric properties of 5Li₂O–0.583Nb₂O₅–3.248TiO₂ (LNT) ceramics have been investigated. With addition of low-level doping of V₂O₅ (≤2 wt%), the sintering temperature of the LNT ceramics could be lowered down to around 920°C due to the liquid phase effect. A secondary phase was observed at the level of 2 wt% V₂O₅ addition. The addition of V₂O₅ does not induce much degradation in the microwave dielectric properties but lowers the τ_f value to near zero. Typically, the excellent microwave dielectric properties of ɛ_r=21.5, Q × f =32 938 GHz, and τ_f=6.1 ppm/°C could be obtained for the 1 wt% V₂O₅-doped sample sintered at 920°C, which is promising for application of the multilayer microwave devices using Ag as an internal electrode.     

Atmospheric Dependence on Dielectric Loss of 1/6Ba5Nb4O15· 5/6BaNb2O6 Ceramics

Samples of 1/6Ba₅Nb₄O₁₅·5/6BaNb₂O₆ along with the pure end members, Ba₅Nb₄O₁₅ and BaNb₂O₆, were sintered under low oxygen partial pressure. The degradation mechanisms of dielectric loss in this reducing atmosphere have been studied. We found that the degradation occurred primarily due to the formation of oxygen vacancies caused by the reduction of Nb⁵⁺. This was determined by measuring the electrical conductivity, and through X-ray photoelectron spectroscopy. More importantly, the dielectric loss of 1/6Ba₅Nb₄O₁₅·5/6BaNb₂O₆ samples with higher temperature stability was further decreased on sintering in a reducing atmosphere. This observation has been explained by considering the increased porosity and formation of a reduced second phase, Ba_0.65NbO₃.     

Tailoring the Microwave Dielectric Properties of MgNb2O6 and Mg4Nb2O9 Ceramics

The columbites MgNb₂O₆, MgTa₂O₆, and corundum-type Mg₄Nb₂O₉ ceramics were prepared by the conventional solid-state ceramic route. The structure and microstructure of the sintered samples were investigated by X-ray diffraction and scanning electron microscopic techniques. The microwave dielectric properties of the samples were measured by the resonance method in the frequency range 4–6 GHz. The dielectric properties have been tailored by forming a solid solution between MgNb₂O₆ and MgTa₂O₆ and by the substitution of TiO₂ for Nb₂O₅ in both MgNb₂O₆ and Mg₄Nb₂O₉ ceramics. The Mg(Nb_0.7Ta_1.3)O₆ has ɛ_r=29, Q _u× f =67 800 GHz, and τ_f=0.8 ppm/°C and the MgO–(0.4)Nb₂O₅–(1.5)TiO₂ composition has ɛ_r=34.5, Q _u× f =81 300 GHz, and τ_f=−2 ppm/°C.     

Low-Temperature Firing and Microwave Dielectric Properties of Ca[(Li1/3Nb2/3)0.84Ti0.16]O3−δ Ceramics for LTCC Applications

The effects of LiF and ZnO–B₂O₃–SiO₂ (ZBS) glass combined additives on phase composition, microstructures, and microwave dielectric properties of Ca[(Li_1/3Nb_2/3)_0.84Ti_0.16]O_3−δ (CLNT) ceramics were investigated. The LiF and ZBS glass combined additives lowered the sintering temperature of CLNT ceramics effectively from 1150° to 880°C. The main diffraction peaks of all the specimens split due to the coexistence of the non-stoichiometric phase (A) and stoichiometric phase (B), which all possess CaTiO₃-type perovskite structures. The transformation from A into B became accelerated with the increase of LiF or ZBS content. ZBS glass restrained the volatilization of lithium salt, which greatly affected the microstructures and microwave dielectric properties. CLNT ceramics with 2 wt% LiF and 3 wt% ZBS sintered at 900°C for 2 h show excellent dielectric properties: ɛ_r=34.3, Q × f =17 400 GHz, and τ_f=−4.6 ppm/°C. It is compatible with Ag electrodes, which makes it a promising ceramic for low-temperature cofired ceramics technology application.     

Sintering Behavior and Dielectric Properties of Bi3NbO7 Ceramics Prepared by Mixed Oxides and High-Energy Ball-Milling Methods

The sintering behavior and dielectric properties of Bi₃NbO₇ ceramics prepared by the high-energy ball milling (HEM) method and conventional mixed oxides method with V₂O₅ addition were investigated. All the samples were sintered between 840° and 960°C. For the ceramics prepared by the mixed oxides method, the pure tetragonal Bi₃NbO₇ phase formed without any cubic phase. With changing sintering temperature, the dielectric constant ɛ_r lies between 79 and 92, while the Q × f values are between 300 and 640 GHz. The samples sintered at 870°C have the best microwave dielectric properties with ɛ_r=79, Q × f =640 GHz, and the temperature coefficients of resonant frequency τ_f between 0 and −20 ppm/°C. For the ceramics prepared by the HEM, a pure cubic phase was obtained. The ɛ_r changes between 78 and 80 and Q × f were between 200 and 290 GHz.     

Microwave Dielectric Properties of Low-Fired ZnNb2O6 Ceramics with BiVO4 Addition

The BiVO₄ additive was found effective for low-temperature firing of ZnNb₂O₆ polycrystalline ceramics below 950°C in air without a serious degradation in their microwave dielectric properties. Dense BiVO₄-doped ZnNb₂O₆ samples of a relative sintered density over 95% could be prepared even at 925°C. An optimally processed specimen exhibited excellent microwave dielectric properties of Q · f = 55000 GHz, ɛ_r= 26, and τ_f=−57 ppm/°C. With increasing BiVO₄ addition up to 20 mol% relative to ZnNb₂O₆, while the quality factor Q · f was gradually decreased, the relative dielectric constant, ɛ_r, was linearly increased and the temperature coefficient of resonant frequency, τ_f, was slightly increased. The variations in Q · f and ɛ_r are surely attributable to the residual BiVO₄ in the ZnNb₂O₆ matrix. An unexpected slight increase in τ_f is probably due to the formation of the Bi(V,Nb)O₄-type solid solution.     

Microwave Dielectric Properties of La6Mg4A2W2O24 [A=Ta and Nb] Ceramics

The microwave dielectric properties of two A-site-deficient perovskite-type ceramics in the La₆Mg₄A₂W₂O₂₄ [A=Ta and Nb] system were investigated. The compounds were synthesized by the solid-state ceramic route. The structure and microstructure were analyzed using X-ray diffraction and scanning electron microscopy techniques. The dielectric properties were measured in the microwave frequency range [4–6 GHz] by the resonance method. La₆Mg₄Ta₂W₂O₂₄ had Q _u× f =13 600 GHz, ɛ_r=25.2, and τ_f=−45 ppm/°C and La₆Mg₄Nb₂W₂O₂₄ had Q _u× f =16 400 GHz, ɛ_r=25.8, and τ_f=−56 ppm/°C.     

Sintering and Microwave Dielectric Properties of the LiNb0.63Ti0.4625O3 Ceramics with the B2O3–SiO2 Liquid-Phase Additives

The effect of B₂O₃–SiO₂ liquid-phase additives on the sintering, microstructure, and microwave dielectric properties of LiNb_0.63Ti_0.4625O₃ ceramics was investigated. It was found that the sintering temperature could be lowered easily, and the densification and dielectric properties of LiNb_0.63Ti_0.4625O₃ ceramics could be greatly improved by adding a small amount of B₂O₃–SiO₂ solution additives. No secondary phase was observed for the ceramics with B₂O₃–SiO₂ additives. With the addition of 0.10 wt% B₂O₃–SiO₂, the ceramics sintered at 900°C showed favorable microwave dielectric properties with ɛ_r=71.7, Q × f =4950 GHz, and τ_f=−2.1 ppm/°C. The energy dispersive spectra analysis showed an excellent co-firing interfacial behavior between the LiNb_0.63Ti_0.4625O₃ ceramic and the Ag electrode. It indicated that LiNb_0.63Ti_0.4625O₃ ceramics with B₂O₃–SiO₂ solution additives have a number of potential applications on passive integrated devices based on the low-temperature co-fired ceramics technology.     

Dielectric Properties of (1−x)CaTiO3–xCa(Zn1/3Nb2/3)O3 Ceramic System at Microwave Frequency

The microwave dielectric properties of the (1− x )CaTiO₃– x Ca(Zn_1/3Nb_2/3)O₃ ceramic system have been investigated. The ceramic samples sintered at 1300°–1450°C for 4 h in air exhibit orthorhombic pervoskite and form a complete solid solution for different x value. When the x value increased from 0.2 to 0.8, the permittivity ɛ_r decreased from 115 to 42, the unloaded quality factor Q × f increased from 5030 to 13 030 GHz, and the temperature coefficient τ_f decreased from 336 to −28 ppm/°C. When x =0.7, the best combination of dielectric properties, a near zero temperature coefficient of resonant frequency of τ_f∼−6 ppm/°C, Q × f ∼10 860 GHz and ɛ_r∼51 is obtained.     

Low-Dielectric Loss Characteristics of Nd(Co1/2Ti1/2)O3 Ceramics at Microwave Frequencies

The microwave dielectric properties and the microstructures of Nd(Co_1/2Ti_1/2)O₃ (NCT) ceramics using starting powders of Nd₂O₃, CoO, and TiO₂ prepared by the conventional solid-state route have been researched. The dielectric constant values (ɛ_r) saturated at 24.8–27. Quality factor ( Q × f ) values of 37 900–140 000 (at 9 GHz) and the measured τ_f values ranging from −45 to −48 ppm/°C can be obtained when the sintering temperatures are in the range of 1410°–1500°C. The ɛ_r value of 27, the Q × f value of 140 000 (at 9 GHz) and the τ_f value of −46 ppm/°C were obtained for NCT ceramics sintered at 1440°C for 4 h. For applications of high selective microwave ceramic resonator, filter, and antenna, NCT is proposed as a suitable material candidate.     

Microwave Dielectric Properties of A-Site Modified Ba(Co0.7Zn0.3)1/3Nb2/3O3 by La3+

The sintering behavior, ordering state, and microwave dielectric properties of Ba_{1− x} La_{2 x /3}(Zn_0.3Co_0.7)_1/3Nb_2/3O₃ Ceramics (0≤ x ≤0.06) were investigated in this paper. The X-ray diffraction (XRD) results show that all samples exhibit a single perovskite phase except for the sample with x ≥0.03. The sinterability is slightly improved by La doping. The long range order (LRO) degree on B-site is greatly increased with the increase of x value up to x =0.015 and then slightly decreased with the further increase of x due to the increasing amount of second phases. The dielectric constant at microwave frequency decreases slightly with the increase of x when x <0.015 and increases slightly with further increasing x for the samples sintered at 1375°C/10 h. The Q × f value increases with x up to x =0.015 and then decreases with further increase of x , which is consistent with the variation trend of LRO degree. The τ_f value decreases slightly with the increase of x up to 0.006, then increases greatly with the further increase of x . An optimized dielectric properties of ɛ _r =34, Q × f =63 159, GHz and τ_f=5.21 ppm/°C were obtained for the x =0.01 sample sintered at 1425°C/10 h.