加弧辉光离子渗钛层相组成的研究

本文采用加弧辉光离子渗金属技术，实现了在不同含碳量普通碳钢表面的渗钛。对渗层合金元素的分布进行了测定；并应用Ｘ射线衍射及透射电镜测试方法，研究了渗钛层的相组成及相分布。分析结果表明：在低碳钢（０．１ｗｔ．％Ｃ）试样表面形成的渗层为固溶了一定钛元素的合金铁素体α相，同时含有ξ－ＦｅＴｉ中间相及碳化物γ－ＴｉＣ，当含碳量高时（０．６，１．２ｗｔ．％Ｃ），试样表面形成以碳化物γ－ＴｉＣ为主的化合物渗层。     

新颖的微空心阴极放电及其性质研究

介绍了微空心阴极放电(microhollow cathode discharge,简称MHCD)的特点,根据MHCD的基本结构设计了—种新的放电结构:它由一个电源和一个可变电阻器构成“微空心阴极维持的辉光放电”,MHCD作为放电的阴极,金属针作为放电的阳极。利用该放电结构进行了空气的放电实验,产生了高气压大体积高电流密度的辉光放电等离子体,用于工业上的多种等离子体加工中;如果用稀有气体放电则能够用来作为微型准分子激光器的增益介质。在200Torr气压下,获得了稳定的空气直流放电,等离子体中电子密度估计在1011到1012cm-3之间,测得放电电流范围;8mA-30mA。测得放电V-I特性曲线,它有典型的微空心阴极维持的辉光放电的特点.估计的气体放电温度为2000K左右。     

Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma

Preliminary results of a study of the hydrogenation of HgCdTe epilayers grown by molecular beam epitaxy on Si substrates using a glow-discharge plasma are presented. The aim of the program is to employ H to passivate the detrimental opto-electronic effects of threading dislocations present in the HgCdTe epilayers. Secondary ion mass spectroscopy depth profiling has been performed to characterize ¹H and ²H incorporation. It has been found that H can be controllably incorporated in HgCdTe epilayers to levels in the 10¹⁴ cm⁻³ to 10¹⁸ cm⁻³ range while maintaining the sample at temperatures lower than 60°C. Profiles indicate that H accumulates in regions of known high defect density or in highly strained regions. Analysis of the H depth profile data indicates that the current density-time product is a good figure of merit to predict the H levels in the HgCdTe epilayer. There are progressive differences in the ¹H and ²H uptake efficiencies as a function of depth. Magneto-Hall measurements show consistently higher mobilities at low temperatures for majority carriers in hydrogenated samples.     

紫外预电离TE(A)CO2激光器自持辉光放电的阻抗计算

提供了一个理论计算紫外预电离TE（A）CO2激光器自持辉光放电的放电阻抗的方法,并以脉冲形成网络（PPN）放电TE（A）CO2激光器粉列,计算了其自持辉光放电“准稳态”阶段的放电阻抗随激光混合气气压的变化情况。     

纯铜表面脉冲激光熔覆Ni60涂层的结构与性能研究

为了克服纯铜表面激光熔覆时热量难以积聚的困难,得到冶金结合良好的Ni60熔覆层,采用预热辅助脉冲激光熔覆的方法,在纯铜表面进行了Ni60合金粉末的熔覆实验,并建立了纯铜表面预热辅助脉冲激光熔覆过程的3维瞬态热弹塑性模型,对温度场及残余应力进行了仿真。预热温度达到573K时,Ni60熔覆层中裂痕完全消除;预热温度为673K时,激光熔覆的加工效率提升了2.2倍;预热辅助脉冲激光熔覆得到的Ni60熔覆层平均硬度达到800HV_0.2;常温下,Ni60熔覆层与ASTM52100钢相对耐磨性为4.45,摩擦系数约是铜和ASTM 52100钢的57%。结果表明,随着预热温度的升高,Ni60熔覆层中裂纹减少,激光熔覆效率提高;Ni60熔覆层有效地提高了表面硬度,减小了摩擦系数。通过预热辅助脉冲激光熔覆技术,在纯铜表面制备得到无裂纹、无气孔的Ni60熔覆层,可有效地提高铜基材的硬度与耐磨性。     

YAG激光诱导组合脉冲放电对材料表面强化的研究

为了增加激光诱导放电坑强化层深度,同时考虑降低由于表面严重气化导致能量的损耗,研究了激光诱导组合脉冲放电的技术。采用多激光诱导放电的方法,通过在脉冲放电过程中增加脉冲激光个数,来增强通道后期激光诱导的能力;采用增加放电脉冲个数的方法,通过控制加工点的温度来控制放电能量的输入方式,减少能量的集中度,来增加强化层深度。结果表明,通过增加诱导激光脉冲个数,放电坑直径从原来的690μm降为652μm,强化层深度从85μm增加到100μm,通过将1个单脉冲改为一定间隔的3个子脉冲,放电坑直径降为653μm,强化层深度增加到92μm。该方案适合机械部件的表面强化加工。     

A path towards a better characterisation of silicon thin‐film solar cells: depth profile analysis by pulsed radiofrequency glow discharge optical emission spectrometry

The analytical potential of radiofrequency pulsed glow discharge optical emission spectrometry (rf‐PGD‐OES) is investigated for quantitative depth profiling analysis of thin‐film solar cells (TFSC) based on hydrogenated amorphous silicon (a‐Si:H). This method does not require sampling at ultra‐high‐vacuum conditions, and so it facilitates higher sample throughput than do reference techniques. In this paper, the determination of compositional depth profiles of a‐Si:H TFSC was performed by resorting to a multi‐matrix calibration procedure. For this purpose, certified reference materials, as well as laboratory standards based on individual layers of doped a‐Si:H, were simultaneously employed to build the analytical calibration curves. Results show that rf‐PGD‐OES allows us to discriminate the different layers of photovoltaic devices: the front contact composed by ZnO:Al₂O₃ (AZO), the a‐Si:H layer (the B‐doped, intrinsic a‐Si:H and P‐doped films), the AZO/Al back contact and substrate. A good agreement with the nominal values for element concentrations (e.g. 0.4% of H, 1.5% of B and 3.7% of P) and layer thicknesses (in the range of 950 nm for the front contact and 13 nm for the P‐doped a‐Si:H layer) was obtained, demonstrating the ability of rf‐PGD‐OES for a direct, sensitive and high‐depth‐resolution analysis of photovoltaic devices. Moreover, diffusion processes between the coating layers, which could have an important influence on the final efficiency of TFSC, can be identified as well. Hence, the findings support the use of rf‐PGD‐OES as an analysis method in the development of photovoltaic thin films. Copyright © 2013 John Wiley & Sons, Ltd.     

溅射工艺对晶片碎片的影响

介绍了半导体晶片制造设备溅射机和溅射工艺对晶片碎片的影响,给出了如何减少晶片应力以达到少碎片的目的.     

直流辉光放电激励连续DCN激光器的实验研究

本文介绍了远红外激光干涉仪的光源——DCN激光器的工作原理,结构特性;不同工作物质气体配比,工作电流,管壁温度,对激光器输出特性影响的实验研究,得到了最佳气体配比,工作电流,工作温度,近远场光束分布,进行了初步分析,理论与实验结果符合。     

THEORETICAL ANALYSIS ON THE TRANSIENT PROCESS OF AC SILENT DISCHARGE

A mathematical model for analysing transient process of AC silent discharge isestablished from its physical model.Then,the breakdown characteristics and the dependence ofdischarge current density on time are calculated theoretically in this kind of AC silent discharge.They are compared with the experimental results and the deviation between the theoretical andexperimental results are discussed briefly.     

磁控溅射成膜温度对纯铝薄膜小丘生长以及薄膜晶体管阵列工艺良率的影响

纯铝薄膜被广泛用作TFT-LCD的金属电极,但纯铝薄膜在热工艺中容易产生小丘,对TFT的阵列工艺的良率有较大影响。本文用磁控溅射的方法在不同温度下沉积纯铝薄膜作为薄膜晶体管的栅极,并通过电学检测、扫描电子显微镜和应力测试等方法对不同温度下沉积的纯铝薄膜的小丘生长情况进行了研究。实验结果表明:纯铝成膜温度提高,薄膜的晶粒尺寸增大,退火后产生小丘的密度和尺寸明显降低,温度-应力曲线中屈服点温度也相应提高。量产中适当提高成膜温度,可以有效抑制小丘的发生,提高TFT阵列工艺的量产良率。