Improvement of UV-moulding accuracy by heat and solvent assisted process

A micro-optics replication process with UV-curable liquid pre-polymers is considered. Filling of the master structure is improved by controlling the viscosity of the pre-polymer by heat during the process. A novel process step, solvent-assisted filling, is introduced to avoid the harmful effect of the residual trapped air; a pyramidal retro-reflector structure with the face width of 400 μm is used as an example. Complete filling can be achieved without vacuum assisted replication or without application of compression force in the mould. Material studies showed no signs of chemical changes, solvent inclusion in the replicated structure, or a change of the optical properties of the material during the process. The replication fidelity is compared with conventional UV-moulding and commercial UV-NIL replication. The new heat and solvent assisted replication technique allows the use of high-viscosity pre-polymers with suitable material properties if the process temperature window is optimized.     

Replication of 3D-microstructures with undercuts by UV-moulding

The replication of microstructures with undercuts by UV-moulding was studied. The pattern transfer from a silicon master into hard acrylate formulations results in defects by sheering away the undercut sections of the replica. By means of the admixture of high elastic acrylates to the formulation the replication of 3D-microstructures with larger undercuts could be achieved. The differences in the replication defect formation for imprinting and UV-moulding are due to the differences in the elasticity of master and replica and the dissimilar distribution of the forces at demoulding.     

Run-length coding method for black-and-white facsimile with a ternary code as an intermediate step

A code is presented that consists of codewords of variable length. This allows a good adaptation to the different run-length statistics of various kinds of documents: printed matter, drawings, weather maps etc. Compared with other run-length codes, the new code yields, in most cases, a better compression ratio.     

Fabrication of novel double microlens using two step soft lithography

A novel method to fabricate double layer microlens array is proposed where the second smaller microlens are imprinted on the first larger microlens by using soft lithography twice. Key step to implement this method is to imprint micron-size structures on convex surface using nano-imprinting technology. It is required to prepare thin polydimethylsiloxane (PDMS) mold for the second soft lithography and thus different thickness of PDMS molds have been tested. It is found that 870 μm thick mold is good for fine duplication and durability. We have successfully fabricated the first microlens hemisphere of 51 μm diameter and the second microlens of 3 μm diameter on top of the first. The double microlens array shows more focused light spot when viewed through optical microscope.     

Modelling speech signals using formant frequencies as an intermediate representation

Multiple-level segmental hidden Markov models (M-SHMMs) in which the relationship between symbolic and acoustic representations of speech is regulated by a formant-based intermediate representation are considered. New TIMIT phone recognition results are presented, confirming that the theoretical upper-bound on performance is achieved provided that either the intermediate representation or the formant-to-acoustic mapping is sufficiently rich. The way in which M-SHMMs exploit formant-based information is also investigated, using singular value decomposition of the formant-to-acoustic mappings and linear discriminant analysis. The analysis shows that if the intermediate layer contains information which is linearly related to the spectral representation, that information is used in preference to explicit formant frequencies, even though the latter are useful for phone discrimination. In summary, although these results confirm the utility of M-SHMMs for automatic speech recognition, they provide empirical evidence of the value of nonlinear formant-to-acoustic mappings     

Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process

A new layer transfer technique which comprised double bonding and a step annealing process was utilized to transfer the GaN epilayer from a sapphire substrate to a Mo substrate. Combined with the application of the thermal-stable bonding medium, the resulting two-inch-diameter GaN template showed extremely good stability under high temperature and low stress state. Moreover, no cracks and winkles were observed. The transferred GaN template was suitable for homogeneous epitaxial, thus could be used for the direct fabrication of vertical LED chips as well as power electron devices. It has been confirmed that the double bonding and step annealing technique together with the thermal-stable bonding layer could significantly improve the bonding strength and stress relief, finally enhancing the thermal stability of the transferred GaN template.     

Fabrication of submicrometre resist patterns using an edge-defined technique

An edge-defined technique for the fabrication of submicrometre resist patterns is described. The technique consists of resist pattern fabrication, deep UV hardening, plasma deposition, spin coating of resist, developing back, and wet etch. A 100 nm line in 1.2 ?m-thick resist layer is obtained with essentially vertical walls.     

Fabrication of Si MOSFET's using neutron-irradiated Silicon as semi-insulating substrate

The feasibility of a novel silicon-on-semi-insulating substrate structure has been demonstrated. MOS field-effect transistors (MOSFET's) are fabricated on neutron-irradiated silicon wafers which are used as semi-insulating substrates. In order to keep the substrate semi-insulating, laser annealing is used to make the semiconducting layer, and to activate the impurities implanted in the semiconducting layer, and plasma anodization is employed to grow the gate oxide. The mobility of carrier in the channel is about 100 cm²/V . s for p-channel MOSFET's and 300 cm²/V . s for n-channel devices. This structure has inherent advantages such as crystallographically single crystalline.     

Antenna measurements on an intermediate distance range by using an interference-pattern technique

Far-field antenna-pattern measurements have been made by using a recently proposed intermediate-distance technique, whereby phase information is extracted from interference patterns. A comparison between these and radiation patterns obtained on a conventional far-field range demonstrates the viability of the measurement method.     

Fabrication and characterization of urchin-like polyaniline microspheres using lignosulfonate as template

An urchin-like conducting microsphere was fabricated by synthesizing polyaniline, PANI, with lignosulfonate, LGS. FESEM images showed that this special PANI structure was controllably formed because the pure PANI presented only a nanofiber formed mat, and the PANI/LGS mixture with the ANI/LGS ratio (%) at 36/1 and 18/1 formed spheres while the PANI nanofibers lied on spherical surface, and only at 9/1 led the PANI nanofiber to stand on sphere surface in the urchin-like structure. Taking the pure PANI as a reference, the urchin-like PANI/LGS microsphere has been found to have enhanced conductivity and thermal stability.     

一步激光直写制作透射式相位光栅

利用一步激光直写灰阶光刻方法制作了具有连续浮雕结构的透射式相位光栅.原子力显微镜测量结果表明制作的透射式相位光栅具有连续外形轮廓、理想的周期和深度.飞秒激光实验系统测量的光栅的衍射效率结果表明:最大衍射角效率为66.8%、零级能量仅为入射光能量的3.3%,这在光限幅中有重要应用价值.     

A rapid multi-device wireless power transfer scheme using an intermediate energy storage

We introduce a new time-division multiplex wireless power transfer (TDM-WPT) scheme for charging multiple devices with a single transmitter. More specifically, our proposed scheme adopts the intermediate energy storage (IES) circuit which enables storing the received energy from the source temporarily and then supplying it to the load. Thus, by adopting the IES, the receiver can charge the battery with the stored energy in the IES even while the receiver is not performing the direct charging process (from the transmitter). This allows charging multiple receivers simultaneously in a virtual manner, and it eventually leads to the reduction of overall charging time. For the theoretical verification, we analyse the performance of our proposed scheme based on the identical environment and in some selected results. We show that with our proposed scheme the required total charging time can be reduced compared to the conventional TDM-WPT. We also consider practical load (battery charger) requirements which change continuously. We present the simple guidelines for some key design parameters such as the optimal capacity of the IES and the proper number of receivers. Note that we additionally present the sample IES circuit and the related circuit simulation to show the detailed operation and the feasibility of the proposed scheme.     

Fabrication of AlGaAs-GaAs quantum-wire gain-coupled DFB lasers bya single MOCVD growth step

AlGaAs-GaAs quantum-wire (QWR) gain-coupled distributed-feedback (GC-DFB) lasers have been fabricated by a single metal-organic chemical vapor deposition growth step on 0.36-μm pitch V-groove arrays of GaAs. A record low-threshold current of 13 mA is achieved via DFB lasing from QWR gain at room temperature. The consistency of the photon energies of the lasing and the photoluminescence peaks from QWR, and about 4-nm-wide stopband with a large threshold gain difference observed in the near-threshold spectrum are presented as possible evidence for GC-DFB effects in these devices     

Backward-wave interaction using step periodic structures

Periodicities introduced into hollow waveguides with step and turn symmetry are shown to have characteristics useful for backward-wave interaction in microwave electron tubes. Using Floquet's theorem, it is shown that the modes of a hollow waveguide can be shifted in phase over one period of the structure. Interaction with the shifted backward-wave mode is then possible over a range of frequencies. A gyrotron backward-wave oscillator is particularly suited to this structure; the interaction could be magnetically tuned over a range of frequencies, while a low phase constant is maintained. A lower phase constant allows the electron beam to interact coherently with the backward wave over longer distances, since any velocity spread in the electron beam forces some of the electrons to be out of step with the backward wave, thus reducing efficiency. A solid waveguide has the added advantages of being easily built for high frequencies and rugged for high temperatures.     

Fabrication of discrete p-n junctions separated by an insulating layer using direct wafer bonding

Three types of fabrication cycle based on the use of direct wafer bonding are developed for making pairs of discrete p-n-junctions separated by an insulating layer. The forward and reverse branches of the I–V characteristics of the resulting diodes are investigated. For all three fabrication cycles, the differential resistance of the forward branch of the discrete p-n-junctions is ∼0.01Ω, the reverse breakdown is ∼400 V, and the width of the aperture region for the back-to-back diodes is 0.22 V. Taken as a whole, these data, along with the high integrated photosensitivity of the diodes, indicate that direct wafer bonding produces no oxide barrier between the p-and n-regions and forms high-quality interfaces. Fiz. Tekh. Poluprovodn. 33, 880–886 (July 1999)     

Fabrication of a counter electrode using glucose as carbon material for dye sensitized solar cells

Carbon material was produced from the graphitization of glucose at high temperature in flowing argon. The produced carbon material was characterized using Scanning electron microscopy, Transmission electron microscopy, Raman spectroscopy and XRD. Carbon slurry of the produced carbon was made in ethanol by using polyvinylpyrrolidone (PVP) as surfactant. Carbon slurry was coated homogeneously on fluorine doped tin oxide (FTO) glass by a doctor blade technique and applied as counter electrode for dye synthesized solar cell. The current density (J) and open circuit voltage (V_OC) of fabricated cell was 8.30 mA cm⁻² and 0.77 V respectively. The efficiency of the cell was 3.63%, which is comparable to 5.82% of cell with platinum counter electrode under the same experimental conditions.     

Fabrication of depletion-mode GaAs MOSFET with a selectiveoxidation process by using metal as the mask

The n-channel depletion-mode GaAs MOSFETs with a selective liquid phase chemical-enhanced oxidation method at low temperature by using metal as the mask (M-SLPCEO) are demonstrated. The proposed process can simplify one mask to fabricate GaAs MOSFET and grow reliable gate oxide films as well as side-wall passivation layers at the same time. The 1 μm gate-length MOSFET with a gate oxide thickness of 35 nm shows a transconductance of 90 mS/mm and a maximum drain current density larger than 350 mA/mm. In addition, a short-circuit current gain cutoff frequency f_T of 6.5 GHz and a maximum oscillation frequency f _max of 18.3 GHz have been achieved from the 1 μm×100 μm GaAs MOSFET     

Research on multi-color OLED with bi-directional charge transfer using Ag:Mg as intermediate electrode

Organic light-emitting devices (OLEDs) have received widespread attention due to their excellent luminescence performance and flexibility. In this work, we demonstrate a novel two-color OLED, in which the forward and reverse units are vertically stacked together using Ag:Mg as an intermediate electrode for charge injection and transfer. Due to the extremely thin Ag:Mg film layer has a relatively smooth surface, it plays a critical role in the reverse unit light emission of the device. Thus, it is realized that the device emits green and red light when forward and reverse voltages are applied respectively. This provides a new possibility for future OLEDs lighting and display developments. The OLEDs were prepared by using such Ag:Mg intermediate electrodes, and a maximum brightness of 451.14 cd/m2 and an external quantum efficiency (EQE) of 3.82% were obtained at a small current density.