基于SU-8胶转子的非接触压电微马达

研制了一种非接触压电微马达，通过阻抗分析仪对定子进行扫频测试，确定其共振频率，并且详细介绍了SU-8胶转子制作的工艺流程。利用转速仪比较不同形状和尺寸的转子在调频和调压下的转速，从而确立压电微马达的最优转子。转子半径为6mm，叶片宽度为6mm的三叶片转子转速最高为3569r／min。转子的启动电压和最高电压分别为8V和24V。     

SU—85光刻胶的应用工艺研究

SU－8系列负性光刻胶是一种新品光刻胶,它具有良好的光敏性和高深度比,适合于微机电系统,UV－LIGA和其它厚膜,超厚膜应用[1,2],介绍了利用SU－85光刻胶,采用UV曝光制轩LIGA掩模板涉及的SU－85工艺研究结果。     

SU-8胶模去除技术

对各种去胶技术的原理、优缺点及其适用场合进行了综述,并结合本实验室的电铸Ni结构去胶试验,对强碱熔盐浴氧化、强酸氧化等经济有效的去胶方法进行了有益发展。最后介绍了SU-8辅助去胶技术,如辅助剥离牺牲层技术、辅助电铸结构抵抗去胶剥落的桩基形成技术。提出了一种与多层互连电路微制造兼容的金属桩基形成技术,并采用强酸氧化去胶方法在制作有互联电路及薄膜电极的基片上成功地集成了200μm厚的Ni结构。     

SU-8胶深紫外光刻模拟

综合了SU-8胶光刻过程中衍射、反射、折射、吸收率随光刻胶深度的变化及交联显影等各种效应,考虑了折射及吸收系数随时间的变化,建立了SU-8化学放大胶的光刻模型.模拟结果显示,该模型比现有的模拟方法结果更精确,与实验结果符合较好,可以在实际应用中对SU-8光刻胶的二维模拟结果进行有效预测.     

SU-8环氧树脂的分离实验研究

为分析和解决商业用SU-8胶在355 nm波长的吸收性和后烘缩胶等问题,先采用柱层析对SU-8环氧树脂进行分离,然后进一步用高压液相色谱-尺寸排阻色谱法对SU-8环氧树脂进行分离和分析。结果表明,SU-8环氧树脂包括SU-1,SU-2,SU-4,SU-6和SU-8多种组分及其它杂质,分子量分布在100-100 000的范围。根据分析结果,研究了上述问题出现的原因,并配制了性能优化的SU-8光刻胶,结合全息光刻技术制作了三维光子晶体。     

SU-8平面抛物形折射透镜的设计与研制

作为应用于第三代同步辐射光源的一种重要X射线元件,复合折射透镜成为近年来X射线光学研究的热点之一。平面抛物形折射透镜是复合折射透镜的重要一种。研究过程中,考虑到X射线衍射仪的特定检测环境及随后加工上的技术要求,优化设计了透镜各个参数,用ZEMAX软件对透镜进行光线追迹,模拟验证了设计结果。单组透镜的几何孔径为250 μm,焦距为30 cm。共设计30组透镜,透镜个数从1个变化到30个,相应的抛物形顶点处的曲率半径从1.23 μm变化到37 μm。在光子能量为8.05 keV条件下,透镜的理论透过率从43.3％变化到33.2％。焦斑直径均在微米量级。采用紫外光刻微加工技术,制作了SU-8光刻胶平面抛物形折射透镜。透镜厚度为224 μm。透镜光学性能的测试正在进行中。     

Three-dimensional SU-8 sub-micrometer structuring by electron beam lithography

We demonstrate electron beam lithography on the negative tone electron resist SU-8 to fabricate self-supporting three-dimensional structures in sub-micrometer range. Applying SU-8 thin films spin cast on glass substrates and forming layers of 1 μm thickness, the structuring is performed in a two step process. First, the SU-8 film is exposed for supporting structures down to the substrate, a second exposure step with accordingly modified parameters leads to elevated structures. Applications as microscale shadow masks for evaporation based deposition processes and microfluidics are discussed.     

Microcontact printing of biomolecular gratings from SU-8 masters duplicated by Thermal Soft UV NIL

Thermal Soft UV nanoimprint lithography (NIL) was performed to replicate nanostructures in SU-8 resist. The SU-8 resist was structured with a PDMS stamp molded against an original silicon master which comported gratings of lines (500 nm width/1 μm pitch). The patterns obtained in SU-8 were used in a second step as a template for PDMS molding of daughter stamps. Pattern transfer quality and dimension control were achieved on these second generation PDMS stamps using AFM measurements. As a final validation of the whole duplication processes, these second generation PDMS stamps were finally employed to perform μCP of streptavidin molecules on a glass slide activated by plasma O₂ treatment. AFM observation and fluorescence microscopy reveal that molecular patterns produced with SU8-molded PDMS stamps are not discernable from those obtained with a PDMS stamp directly molded on the original silicon master. Coupling Thermal Soft UV NIL and microcontact printing opens a new method for generating a large quantity of SU-8 templates on which functional PDMS stamps can be replicated in a reduced time. We thus propose a functional duplication process for soft-lithography implementation which may further reduce the cost of this technology for industrial development.     

SU-8胶微结构的显影技术研究

突破了传统深宽比概念,提出金属基底上基于图形特征的光刻胶显影技术,对采用SU-8胶加工高分辨率和高深宽比微结构的显影工艺进行了讨论,分析了120～340μm厚具有不同图形特征的SU-8胶显影规律,认为在同样条件下,凸型图形显影效果优于凹型非连通性图形;曲线型显影效果优于直线型图形与点状图形;圆弧连接的图形显影效果优于尖角型图形。显影时辅助适当功率的超声搅拌显著改善图形质量,凸型结构最佳超声功率小于10W;凹型结构超声功率为15W左右;深宽比为5～7的凸型胶膜结构适宜显影时间为10min以内,凹型结构显影时间达25min。     

基于SU-8的微透镜阵列的设计和制作

以SU-8作为结构材料,采用紫外光刻工艺,尤其以斜曝光工艺为主,加工出主光轴平行于衬底基片的微透镜阵列,单个微透镜的直径大约为500μm。初步确定出加工此透镜所需要的曝光剂量、前烘时间、后烘时间和显影时间,为加工其他尺寸的透镜提供参考。基于此方法加工的微透镜阵列能够对光束进行聚焦、反射、衍射、相位调制等控制,从而可最终实现光开关、衰减、扫描和成像等功能,为其他微型光学器件,如分光镜和反射镜等的系统集成提供极大的便利。同时,此微透镜阵列也会被集成在微流细胞仪中用来对流式细胞仪中样本流做荧光检测,极大地提高了检测的精度。     

Fabrication of SU-8 microreactors for radiopharmaceutical production

SU-8 is a very interesting material for the fabrication of lab-on-chip devices applied to organic synthesis because of its resistance to chemicals and solvents. Among the possible application fields of microreactor technology, radiochemistry is emerging because microfluidic apparatuses allow to perform radiosynthesis in a quicker, safer and more reliable way compared to traditional vessel-based approaches. Microreactors for synthesizing [¹⁸F]-labelled radiopharmaceuticals require the employment of materials that do not adsorb fluoride and are resistant to solvents and chemicals. Pyrex, glass and silicon adsorb fluoride ions, therefore they are not the best choice. SU-8 is stable towards chemicals and solvents but nothing is known about its behaviour with radioactive fluoride. Here we develop a simple fabrication procedure to make fully coated SU-8 microreactors and we demonstrate the potentiality of SU-8 microfluidic architectures to be used for radiosynthesis, giving a proof of their low tendency to trap radioactive fluoride if compared with traditional glass microchannels.     

降低SU-8光刻胶侧壁粗糙度的研究

SU-8负性光刻胶可通过UV-LIGA技术得到高深宽比微结构,是微机械系统(MEMS)制造中极具前景的一种技术。目前已有对于SU-8微结构的线宽变化,侧壁倾角,表面粗糙度,增加深宽比等方面的大量研究,但是鲜有对于SU-8微结构侧壁粗糙度的研究。该文从造成微结构侧壁粗糙度的原因入手,讨论了各个工艺参数对侧壁粗糙度的影响,并且通过优化工艺参数达到了降低SU-8微结构侧壁粗糙度的目的。     

应用三维线算法的SU-8胶光刻过程模拟

采用二维法向量作为分量,加权求和近似得到三维网格点上的单位法向量,将经典的二维线算法改进为三维形式。综合SU-8胶光刻过程中衍射、吸收率随光刻胶深度的变化及交联显影等各种效应,应用该三维线算法对SU-8化学放大胶进行光刻过程三维建模。该模型对被加工表面演化过程的模拟较为精确,可在实际应用中对SU-8胶的光刻模拟结果进行有效预测。     

Formation of aluminum tunnel pits arrayed using SU-8 masks with UV-assisted thermal imprint lithography

For high capacitance aluminum electrode was selectively etched with square of tunnel pits. SU-8 photoresist as etching mask was patterned on aluminum by UV-assisted thermal imprint lithography and then surface area of aluminum was increased by electrochemical etching, where tunnel pits were generated regularly and were approximately 20 μm in length, 3.5 μm in width, resulting in 10⁶ tunnels per cm² of surface. Consequently, the capacitance of the dielectric showed an increase of up to four times higher than the unpatterned surface.     

SU-8 nanocomposite photoresist with low stress properties for microfabrication applications

A new nanocomposite photoresist based on SU-8 epoxy resin has been developed. It consists in a homogeneous dispersion of nano-silica particles in the negative tone photosensitive SU-8. The nanocomposite photoresist is more sensitive than the SU-8 photoresist and the photopatterned composite structures show low stress and less cracks than pure SU-8 structures. No significant resolution difference has been observed for both materials.     

SU-8光刻胶氧刻蚀的研究

采用氧气反应离子刻蚀(RIE)SU-8光刻胶,以获得三维SU-8微结构(如斜面)。实验采用套刻、溅射、湿法腐蚀、电镀等技术实现光刻胶上镍掩膜图形化。分别研究氧气气压、射频(RF)功率、氧气流量对刻蚀速率的影响,并对实验结果进行了理论分析,在此基础上可进一步优化刻蚀工艺以获得更高的刻蚀速率。     

UV-LIGA工艺中SU-8光刻胶的热溶胀性研究

对SU-8胶的热溶胀效应及其机理进行了研究,在现有微模具的UV-LIGA工艺的基础上,利用AN-SYS对SU-8胶的热溶胀性规律进行了仿真分析。通过SU-8胶模的溶胀实验,建立了热溶胀变形的速率模型,并计算了不同电铸时间下微模具的顶部线宽,计算结果与实验值基本吻合。仿真结果可用来优化掩模图形的设计及预测电铸后微模具的尺寸。     

一种利用PDMS工艺解决SU-8去胶问题的方法

提出了一种解决SU-8去胶难题的方法.该方法首先将SU-8微结构用PDMS进行复制,然后利用复制的PDMS微结构进行下一步的电铸,电铸完成后只要简单地将PDMS揭下即可释放出金属模具.通过该方法制备得到了深宽比达到10的金属模具,而且模具表面光滑,侧壁垂直.     

An Alternative Method for SU-8 Removal Using PDMS Technique

An alternative method for SU-8 removal is proposed.Instead of directly using SU-8 microstructure as the electroplating mold,a polydimethysiloxane (PDMS) replica is employed.The metallic micromold insert obtained through this method can be easily peeled off from the PDMS replica,meanwhile with high resolution and smooth surfaces.     

SU-8胶光刻工艺参数优化研究

对基于SU-8胶的UV-LIGA技术进行了工艺优化,研究了光源波长和曝光时间对SU-8胶成型的影响。结果表明,光刻胶表面线宽变化随曝光时间增加先减少后增加,有一个极小值;侧壁角度先增加后减少,有一个极大值。通过优化光源波长、曝光时间以及显影时间三个主要工艺参数,可以获得侧壁角度为90.64°正角的300μm厚光刻胶微结构和侧壁角度为89.98°近似垂直的500μm厚光刻胶微结构。