共查询到20条相似文献,搜索用时 171 毫秒
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研究了影响三维微机械电感电感值和Q值的主要因素 ,提出了电感值和Q值的理论计算模型。并利用该模型 ,对不同尺寸结构的三维微机械电感进行了数值模拟。根据理论计算的结果 ,得到了电感的优化结构 ,在 2 .5GHz的工作频率下 ,其电感值为 11nH ,Q值为 9。 相似文献
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硅微机械悬浮结构电感的设计与制作工艺研究 总被引:1,自引:0,他引:1
本文系统分析了影响平面螺旋电感Q值的主要因素,并制作出一种应用于射频通信的硅微机械悬浮结构电感.在考虑趋肤效应、涡流损耗等高频电磁场效应对电感Q值的影响后,获得了微机械电感的简化电学模型,得到了具有较高Q值电感的优化结构.在制作硅微机械电感的工艺过程中,采用多孔硅作为牺牲层材料,将螺旋结构铝线圈制作在二氧化硅薄膜上,在使用添加了硅粉和过硫酸铵的TMAH溶液释放牺牲层之后,得到设计值为4nH的悬浮结构微机械平面螺旋电感.实验结果证明,整个工艺流程可靠,并与CMOS工艺兼容. 相似文献
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新型悬空结构射频微电感的制作与测试 总被引:1,自引:0,他引:1
利用MEMS(Micro Electro-Mechanical System:微机电系统)工艺中的牺牲层技术制作了一种新型悬空结构微电感,在此悬空结构中,微电感的线圈制作在与衬底平行的平面上,线圈与衬底之间有立柱支撑;此新型微电感的制作工艺流程简单,与集成电路工艺相兼容,且其高频性能较好。并对此结构微电感的性能进行了测试,测试频率范围在0.05~10 GHz之间,结果表明:当悬空结构微电感的悬空高度为20 靘,工作频率在3~5 GHz范围内时,其电感量达到4 nH,其Q值最大可达到22。 相似文献
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采用微机电系统(MEMS)技术制作了磁芯螺线管微电感,该技术包括UV-LIGA、干法刻蚀技术、抛光和电镀技术等。研制的微电感大小为1500μm×900μm×100μm,线圈匝数为41匝,宽度为20μm,线圈之间的间隙为20μm,高深宽比为5∶1。测试结果表明:在1~10MHz频率下,其电感量为0.408~0.326μH,Q值为1.6~4.2。 相似文献
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Xiao-Yu Gao Yong Zhou Ying Cao Chong Lei Wen Ding Hyung Choi Jonghwa Won 《Electronics Packaging Manufacturing, IEEE Transactions on》2007,30(2):123-127
This paper reports on a technological process that combines copper as conductor, permalloy as magnetic core material, and polyimide as insulation material to complete a microinductor on glass with high inductance. The shape of the magnetic core scheme was rectangular, of which the width of the long side and short side were 1.4 and 0.6 mm, respectively. The dimensions of the inductor are 3.86 mm times 3.94 mm times 90 mum with coil width of 20 mum and space of 35 mum. The results show that the maximum inductance is 4 muH at 1 MHz, and the maximum quality factor (Q-factor) is 1.5 at 2 MHz. 相似文献
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Brandon E.J. Wesseling E.E. Vincent Chang Kuhn W.B. 《Components and Packaging Technologies, IEEE Transactions on》2003,26(3):517-523
A low-profile microinductor was fabricated on a copper-clad polyimide substrate where the current carrying coils were patterned from the existing metallization layer and the magnetic core was printed using a magnetic ceramic-polymer composite material. Highly loaded ferrite-polymer composite materials were formulated, yielding adherent films with 4/spl pi/M/sub s//spl ap/3900 G at +5000 Oe applied DC field. These composite magnetic films combine many of the superior properties of high temperature ceramic magnetic materials with the inherent processibility of polymer thick films. Processing temperatures for the printed films were between 100/spl deg/C and 130/spl deg/C, facilitating integration with a wide range of substrates and components. The quality factor of the microinductor was found to peak at Q=18.5 near 10 MHz, within the optimal frequency range for power applications. A flat, nearly frequency independent inductance of 1.33 /spl mu/H was measured throughout this frequency range for a 5 mm/spl times/5 mm component, with a DC resistance of 2.6 /spl Omega/ and a resonant frequency of 124 MHz. The combination of printed ceramic composites with organic/polymer substrates enables new methods for embedding passive components and ultimately the integration of high Q inductors with standard integrated circuits for low profile power electronics. 相似文献
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The partial silicon-on-insulator technology for RF power LDMOSFET devices and on-chip microinductors 总被引:6,自引:0,他引:6
Changhong Ren Jun Cai Liang Y.C. Pick Hong Ong Balasubramanian N. Sin J.K.O. 《Electron Devices, IEEE Transactions on》2002,49(12):2271-2278
A new partial silicon-on-insulator (SOI) formation technology and the associated RF LDMOSFET device structure on a silicon bulk substrate are proposed in this paper. The same technology can also be applied to enhance the quality factor of the integrated on-chip microinductors. The proposed technology is able to reduce both drain/substrate parasitics and leakage current for devices fabricated on bulk substrates. At the same time, the approach overcomes the thermal problem encountered by devices fabricated on full-SOI substrates. To demonstrate the technology, both partial-SOI LDMOSFET and microinductor devices were fabricated on a bulk wafer with their RF performance verified by laboratory measurements. 相似文献
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《Microelectronic Engineering》2007,84(5-8):789-792
Focused ion beam (FIB) is a powerful and versatile tool for the maskless fabrication of structures and devices in the micro and nanometre scales. This can be performed by the milling and deposition capabilities of a focused ion beam, the latter being achieved by the ion beam-assisted decomposition of a metalorganic gas precursor of the specific material that has to be deposited. The combination of the FIB and a SEM in the same machine, giving rise to the so-called dual-beam or cross-beam machines, further expands the capabilities of the technique by the possibility of performing electron-beam assisted deposition and inspection, which is less harmful than using the ion beam. In this work three examples of the various capabilities of dual-beam systems for the fabrication of prototypes of different types of devices will be presented. The devices fabricated are a microinductor made in copper, the fine trimming of silicon mechanical resonators and the fabrication of nanocontacts to nanowires for the extraction of electrical parameters and for the fabrication of gas sensors from them. 相似文献
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