Temperature Effects on Photoluminescence Properties of Porous Silicon

The temperature effects on the photoluminescence（PL） properties of porous silicon（PS） have been observed in the early stage. However, the obtained results are different. Through repeated experiments, some different and useful information are got, which benefits us in that PL properties of porous silicon can be fully made use of. Firstly, samples with porosity of 76% and 49% were chosen to study the exciting temperature effects on the PL spectrum. For the samples with low porosity, the decreasing temperature causes the peak wavelength to be red-shifting and that of the samples with high porosity to present the blue-shifting trend. The light intensity of both reaches the maximum at - 10℃. These experimental results can be well explained with the synthesized center PL model based on the quantum confinement model, other than the PL efficiency function σ（λ）. Thereafter, PL properties of PS samples fabricated separately under the temperature of -10 ℃, 0 ℃ , 10 ℃, 20 ℃ and 30 ℃ were studied. The results indicate that with the decrease of the etching temperature, the PL intensity increases from 406.7 to 716.6 and the peak wavelength blue-shifts from 698.9 nm to 671.8 nm. The WHFM of the PL spectrum dramatically narrows. At the same time, the images observed by AFM show that with the decreasing temperature, the holes are becoming deeper and the porosity is higher, which suggests that the decreasing temperature accelerates the etching rate.     

Effects of Temperature on Weak Principal Axis of Twisted Fiber Loop

Theoretically and experimentally, the effects of temperature on the weak principal axis of twisted optical fiber loop are analyzed, and the results show that the location of the pair of weak principal axis will drift with temperature change, which will deteriorate the stability of system when applied to sensor system. In this paper, the influence of phase drift of weak principal axis on the performance of optical fiber current sensor is mainly predicted theoretically. Our research results will provide a beneficial reference for improving optical fiber sensor system.     

Comparison Study on Three Different Reconfigurable Optical Add Drop Multiplexer Architectures

In this paper, we present the evolution of reconfigurable optical add drop multiplexer（ROADM） technologies, and compare three main ROADM architectures available on the market today. Three archhectures include broadcast-select and demux-switch-mux[and the integrated version planar lightwave circuit（PLC）] and wavelengths-selective switch.     

Design and Temperature Reliability Testing for A 0.6–2.14GHz Broadband Power Amplifier

This article presents a broadband power amplifier (PA) with a compact structure and investigates its temperature reliability. Design and temperature reliability test procedures are elaborated. The PA delivers good broadband characteristics (0.6–2.14GHz) with the maximum PAE of 46.4 % and saturated output power of more than 35.1dBm at the whole operating frequency band. A series of experiments including those on DC characteristic, S-parameter and large signal characteristic have been conducted to investigate the temperature effects for the broadband performance and reliability of the designed PA.     

Solvent and Temperature Effects on Spectral Properties of Two Poly(32alkyl)thiophene Derivatives

Two alkyl substituted polythiophene derivatives: poly(32hexylthiophene)(P3HT) and poly(32decylthiophene)(P3DT), have synthesized by oxidation coupling polymerization of 32alkylthiophene using iron (III) chloride as catalyst in chloroform. While both polymers in pure chloroform solution have maximum absorption at approximately same wavelength of 440 nm, they behave differently with respect to changes observed on their UV2visible and photoluminescence spectra when the quality of the poor solvent is changed in good solvent (chloroform) / poor solvent (methanol) mixtures. With increasing volume fraction of methanol in mixtures, the absorption spectra of P3HT and P3DT red2shift, peaking at maximum wavelength of 495 nm (P3HT) and 510 nm(P3DT). Furthermore, the absorption spectra of the two polymers in chloroform blue2shift as the temperature rises. P3HT shows 4.73 nm blue2shifts at 50℃in contrast to the case at 20℃, while P3DT blue2shifts about 5.04 nm. The photoluminescence spectra of the two polymers in mixed solution are also investigated, which show that the luminescence spectra shift to longer wavelength with an accompanying drop in the PL intensity as methanol is increased. The absorption and emission spectra of the two polymers in a poor solvent and a thin film are similar, which indicate that a similar longer conjugation length in the two cases. It could conclude that the polymers exist almost the same conformations and aggregations in both a poor solvent and a thin film. P3DT exhibits more sensitive spectra properties (big red2shifts in both absorption and luminescence spectra in poor solvents and large blue2shifts at high temperature) with contrast to P3HT, which imply that long side alkyl may improve the chromic properties of the polymer.     

Solvent and Temperature Effects on Spectral Properties of Two Poly （3-alkyl） thiophene Derivatives

Two alkyl substituted polythiophene derivatives : poly (3-hexylthiophene) ( P3 HT) and poly ( 3- decyhhiophene) (P3DT), have synthesized by oxidation coupling polymerization of 3-alkylthiophene using iron (Ⅲ) chloride as catalyst in chloroform. While both polymers in pure chloroform solution have maximum absorption at approximately same wavelength of 440 nm, they behave differently with respect to changes observed on their UV-visible and photoluminescence spectra when the quality of the poor solvent is changed in good solvent (chloroform) / poor solvent (methanol) mixtures. With increasing volume fraction of methanol in mixtures, the absorption spectra of P3HT and P3DT red-shift, peaking at maximum wavelength of 495 nm (P3HT) and 510 nm(P3DT). Furthermore, the absorption spectra of the two polymers in chloroform blueshift as the temperature rises. P3HT shows 4.73 nm blue-shifts at 50 ℃ in contrast to the case at 20 ℃, while P3DT blue-shifts about 5.04 nm. The photoluminescence spectra of the two polymers in mixed solution are also investigated, which show that the luminescence spectra shift to longer wavelength with an accompanying drop in the PL intensity as methanol is increased. The absorption and emission spectra of the two polymers in a poor solvent and a thin film are similar, which indicate that a similar longer conjugation length in the two cases. It could conclude that the polymers exist almost the same conformations and aggregations in both a poor solvent and a thin film. P3DT exhibits more sensitive spectra properties (big red-shifts in both absorption and luminescence spectra in poor solvents and large blue-shifts at high temperature) with contrast to P3HT, which imply that long side alkyl may improve the chromic properties of the polymer.     

Temperature Effects on Hetero Structure Junctionless Tunnel FET

For the first time, we investigate the temperature effect on Al Ga As/Si based hetero-structure junctionless double gate tunnel field effect transistor. Since junctionless tunnel FET is an alternative substitute device for ultra scaled deep-submicron CMOS technology, having very good device characteristics such as an improved subthreshold slope(< 60 m V/decade at 300 K) and very small static leakage currents. The improved subthreshold slope and static leakage current confirms that it will be helpful for the development of future low power switching circuits. The 2-D computer based simulation results show that OFF-state leakage current is almost temperature independent for the proposed device structure.     

Relaxation,Thermal, and Interphase Effects in Polymer–Ferroelectric-Piezoelectric Ceramic Composites of Different Structures

Semiconductors - The relaxation and thermal processes and interphase phenomena in composites based on ferroelectrics and a polymer matrix are studied. It is shown that the charge stabilized at the...     

Effects of Annealing Temperature on Properties of ZnO Thin Films Grown by Pulsed Laser Deposition

ZnO thin films are deposited on n-Si（111） substrates by pulsed laser deposition（PLD） system. Then the samples are annealed at different temperatures in air ambient and their properties are investigated particularly as a function of annealing temperature. The microstructure, morphology and optical properties of the as-grown ZnO films are studied by X-ray diffraetion（XRD）. atomic force mieroseope（AFM）, Fourier transform infrared spectroscopy（FTIR） and photoluminescence（PL） spectra. The results show that the as- grown ZnO films have a hexagonal wurtzite structure with a preferred c-axis orientation. Moreover, the diameters of the ZnO crystallites become larger and the crystal quality of the ZnO fihns is improved with the increase of annealing temperature.     

Effect of Isothermal Aging on the Long-Term Reliability of Fine-Pitch Sn–Ag–Cu and Sn–Ag Solder Interconnects With and Without Board-Side Ni Surface Finish

The combined effects on long-term reliability of isothermal aging and chemically balanced or unbalanced surface finish have been investigated for fine-pitch ball grid array packages with Sn–3.0Ag–0.5Cu (SAC305) (wt.%) and Sn–3.5Ag (SnAg) (wt.%) solder ball interconnects. Two different printed circuit board surface finishes were selected to compare the effects of chemically balanced and unbalanced structure interconnects with and without board-side Ni surface finish. NiAu/solder/Cu and NiAu/solder/NiAu interconnects were isothermally aged and thermally cycled to evaluate long-term thermal fatigue reliability. Weibull plots of the combined effects of each aging condition and each surface finish revealed lifetime for NiAu/SAC305/Cu was reduced by approximately 40% by aging at 150°C; less degradation was observed for NiAu/SAC305/NiAu. Further reduction of characteristic life-cycle number was observed for NiAu/SnAg/NiAu joints. Microstructure was studied, focusing on its evolution near the board and package-side interfaces. Different mechanisms of aging were apparent under the different joint configurations. Their effects on the fatigue life of solder joints are discussed.     

Considerations on CDMA–OFDM System Performances in Different Channel Environments for Different Modulation and Coding Scenarios

This paper presents a number of results obtained based on a CDMA–OFDM simulator developed in Matlab. The simulator has been extended to accommodate in a flexible manner to different modulation schemes, multiple access techniques, spreading codes types and lengths, convolutional codes rates, number of users and types of channels. The performances are evaluated and compared based on the Bit Error Rate (BER) as a function of the Signal to Noise Ratio (SNR) results achieved in different scenarios. In this paper are presented the results obtained by the developed simulator for two types of spreading codes—perfectly orthogonal Walsh type codes versus pseudo-orthogonal Gold type codes. The performances are evaluated in different channel environments the classical AWGN, pedestrian, vehicular and indoor ITU-R M.1225 models, for BPSK and QPSK modulations and 1/2 respectively 3/4 rate channel coding. Furthermore, since the results shown that the Gold spreading codes, QPSK modulation and 1/2 rate coding achieves the best performances in all type of channels analyzed, the authors investigate the effect of the code length and of the number of users on these results.     

Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles

Semiconductors - The temperature dependences of the capacitance–voltage characteristics and deep-level spectra of a Au–n-Si:Au–Si–p-Si heterostructure based on a composite...     

Electrical Resistance and Microstructural Changes of Silver–Epoxy Isotropic Conductive Adhesive Joints Under High Humidity and Heat

In this study, the degradation mechanism of chip resistors mounted with Ag–epoxy isotropic conductive adhesive (ICA) under two different environmental conditions, i.e., humidity exposure (85°C/85% relative humidity) and thermal cycling (TC, –40°C to 125°C), was examined by monitoring the change in electrical resistance and by transmission electron microscopy. The effect of the terminal finishes (Sn/Ni or Au/Ni) of the chip components on joint stability during those two tests was also examined. The electrical resistance of the Sn/Ni-plated chip component joined with Ag–epoxy ICA during both environmental tests increased with exposure time. On the other hand, the electrical resistance of the Au/Ni-plated chip component joined with Ag–epoxy ICA remained unchanged during both tests. In the case of the Sn/Ni-plated chip joint, Sn oxides such as SnO, SnO₂, and Sn-Cl-O were formed inhomogeneously on the surface of the Sn plating during the humidity exposure test. Under the TC test, microcracks were also observed at the Sn/epoxy and the Ag filler/epoxy interfaces. A Ni₃Sn intermetallic compound (IMC) was formed at the interface between Sn and Ni, and the Ni₃Sn₄ IMC was also formed at the Sn surface. In contrast, no oxide was found in the Au/Ni-plated chip joint during the humidity exposure test. Also, no IMC was found in that joint during the TC test. It is suggested that oxides, microcracks, and IMCs cause the electrical degradation of Sn/Ni-plated chip components joined with Ag–epoxy ICA.     

Improvement of Thermal Fatigue Properties of Sn-Ag-Cu Lead-Free Solder Interconnects on Casio’s Wafer-Level Packages Based on Morphology and Grain Boundary Character

Thermal fatigue properties of commercial LF35 (Sn-1.2Ag-0.5Cu-0.05Ni), SAC105 (Sn-1Ag-0.5Cu), and SAC305 (Sn-3Ag-0.5Cu) solders on Casio’s wafer-level packages are discussed from the viewpoints of both morphology and grain boundary character. Orientation imaging microscopy revealed that both LF35 and SAC305 resisted the coarsening of tin grains during thermal fatigue as compared with SAC105, correlating with their greater fraction of coincidence site lattice boundaries. This seems to explain why LF35 has superior thermal fatigue life in spite of its lower silver content.     

Effects of Current Stressing on Formation and Evolution of Kirkendall Voids at Sn–3.5Ag/Cu Interface

Kirkendall voids (KVs) are known to be formed at the Cu/Cu₃Sn interface, which can remarkably weaken solder joints. In this paper, the formation and evolution processes of KVs at Sn–3.5Ag/Cu joints were systematically investigated under isothermal aging and current stressing. It was found that the processes develop faster when joints are subjected to current stressing as opposed to thermal aging. This can be illuminated by the high KV densities caused by current stressing at both cathode and anode Cu/Cu₃Sn interfaces. Moreover, KVs formed under current stressing showed some polarity characteristics, namely that higher KV density was observed on the anode side compared with the cathode side. The interfacial reaction generated at the Cu₃Sn/Cu₆Sn₅ interface, which was partly affected by current stressing, contributed to this polarity effect. As the holding time was prolonged, microvoids coalesced into larger porosities and microcracks. These defects will greatly threaten the reliability of the interface.     

Effects of Annealing Temperature on the Electric Properties of 0.94(Na0.5Bi0.5)TiO3–0.06BaTiO3 Ferroelectric Thin Film

0.94(Na_0.5Bi_0.5)TiO₃–0.06BaTiO₃ (NBT–BT6) ferroelectric thin films have been fabricated on Pt–Ti–SiO₂–Si(100) substrate by metal–organic decomposition. The effects of annealing temperature (650–800°C) on the microstructure, and the piezoelectric, ferroelectric, and dielectric properties of the thin films were studied in detail. The residual stress was evaluated by the orientation average method to clarify its dependence on annealing temperature and grain size, and it was correlated with the electric properties to understand the mechanism of piezoelectric enhancement. Among the thin films, NBT–BT6 thin film annealed at 750°C has the largest effective piezoelectric coefficient, 95.1 pm/V, remnant polarization, 49.7 μC/cm², spontaneous polarization, 105.2 μC/cm², and dielectric constant, 504, and the lowest dielectric loss, 0.05, and tensile residual stress, 24.5 MPa. For the NBT–BT6 thin film annealed at 750°C, a wide temperature range, 183–210°C, around the phase transition temperature (T _m) was observed in the dielectric temperature plots, and the diffusion coefficients (γ) were quantitatively assessed as 1.6, 1.78, and 1.6. Piezoelectric performance is discussed on the basis of the dispersion phase transition and residual stress.     

Effects of Cu on the interfacial reactions between Sn–8Zn–3Bi–xCu solders and Cu substrate

The microstructure, thermal property, and interfacial reaction with Cu substrate of Sn–8Zn–3Bi–xCu (x = 0, 0.5, 1) lead-free solders were investigated in this work. Cu–Zn intermetallics formed in the solder matrix and the melting temperature increases slightly with Cu addition. After soldering at 250 °C for 90 s, a flat Cu₅Zn₈ layer and a scallop CuZn₅ layer formed at the interfaces of all samples. The CuZn₅ intermetallic compound (IMC) transformed to Cu₅Zn₈ IMC with longer reaction time due to the diffusion of Cu atoms from Cu substrate. The interfacial IMC layer grew thicker with the reaction time following a parabolic law which suggested the interfacial reactions were diffusion controlled. The calculation results show that the activation energy of IMC growth for Cu-containing solders is larger than that of Sn–8Zn–3Bi solder, which demonstrated that a small amount of Cu addition to the solder can effectively suppressed the growth of the interfacial IMC.     

Effects of isothermal aging and temperature–humidity treatment of substrate on joint reliability of Sn–3.0Ag–0.5Cu/OSP-finished Cu CSP solder joint

This study examined the effects of isothermal aging and temperature–humidity (TH) treatment of substrate on the joint reliability of a Sn–3.0Ag–0.5Cu (wt.%)/organic solderability preservative (OSP)-finished Cu solder joint. Two types of OSP-finished chip-scale-package (CSP) substrates were used, those subjected and not subjected to the TH test. This study revealed an association between the interfacial reaction behaviors, void formation and mechanical reliability of the solder joint. Many voids were formed at the interface of the OSP-finished Cu joint subjected to the TH test. These voids were caused by the oxidation of the OSP-finished Cu substrate during the TH test. In the shear tests, the shear force of the joint with the substrate not subjected to the TH test was slightly higher than that with the TH test. The mechanical reliability of the solder joint was degraded by voids at the interface.     

Effects of Reaction Temperature on Thermoelectric Properties of p-Type Nanostructured Bi2−x Sb x Te3 Prepared Using Hydrothermal Method and Evacuated-and-Encapsulated Sintering

We report fabrication of nanostructured Bi_2?x Sb _x Te₃ using hydrothermal method followed by cold-pressing and evacuated-and-encapsulated sintering techniques. To obtain lower resistivity, the reaction temperature in the hydrothermal synthesis is investigated, and the effects on the ZT values of Bi_2?x Sb _x Te₃ are reported. Both the x = 1.52 and 1.55 samples hydrothermally synthesized at 160°C show lower resistivity than the x = 1.55 sample hydrothermally synthesized at 140°C. However, the power factor is lower for the samples synthesized at 160°C due to the accompanying smaller thermopower. All three samples exhibit remarkably low thermal conductivity of around 0.41 W m^?1 K^?1 at room temperature. The peak ZT value occurs at 270 K for all three samples, being ZT = 1.75, 1.29, and 1.17 for x = 1.55 (synthesized at 140°C), 1.55 (synthesized at 160°C), and 1.52 (synthesized at 160°C), respectively.     

Reliability comparison of 28 V–50 V GaN-on-SiC S-band and X-band technologies

This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates. The intrinsic reliability performances of the 28 V and 40 V technologies, with 400 nm and 250 nm gate length, have been characterized with DC accelerated life test (DC-ALT), for which ohmic contact inter-diffusion is the wear-out mechanism, and is accelerated by temperature and current. The intrinsic reliability performance of the 50 V technologies, with 400 nm gate length, have been characterized with RF-ALT, for which source-connected second field plate void coalescence is the wear-out mechanism which is accelerated by temperature. In spite of the differences in the accelerated test methodologies and wear-out mechanisms, all of the Wolfspeed GaN-on-SiC technologies demonstrate high and similar predicted lifetimes at their respective maximum recommended operating conditions. The reliability performance is supported with successful technology qualifications with zero failures, and volume manufacturing with a demonstrated low field failure rate.